SiC高温氧化的热力学研究

本文运用自由能最小法研究了Ａｒ－Ｃ－Ｈ－Ｏ－Ｓｉ体系的化学平衡，以国际流行的广义简约梯度软件ＧＢＧ２为优化模型编制了求解复杂化学平衡的软件ＺＧＲＧ计算表明ＺＧＲＧ具有很好的收敛性能，对Ａｒ－Ｃ－Ｈ－Ｏ－Ｓｉ体系的计算表明，ＳｉＣ从活性氧化向惰性氧化的转变分压（Ｐｏ２，ＰＨ２Ｏ）随温度的增加而增加，同时本文还将计算结果与其他研究者的实验结果进行了比较，并对造成计算值与实验值差异的原因进行了分析。     

一般化超立方网络的容错寻径算法

本文研究一般化超立方网络（ＧＨＣ）的容错寻径算法。给定一个一般化超立方网络Ｇ（ｍ，ｒ）：Ｎ＝ｍ＾ｒ（ｍ≥２，ｒ≥１），Ｆ为其故障结点集合，且Ｇ（ｍ，ｒ）－Ｆ是连通的，Ｓ和Ｄ是Ｇ（ｍ，ｒ）中任意两个非故障结点，其汉明距离Ｈ（Ｓ，Ｄ）＝ｈ，则当故障结点的个数│Ｆ│〈ｄ，一定存在一条长度≤ｈ＋２的非故障路径Ｐ（Ｓ，Ｄ），而当ｄ≤│Ｆ│〈ｍ（ｄ－ｍ＋１）时，一定存在一条长度≤ｈ＋４ｍ－２的非故障路径Ｐ（Ｓ     

钴臬合金镀层磷酸根离子敏感电极研究

新型敏感材料研究将在助于探索新的敏感特性和机理。用硫酸镍、硫酸钴紫铜基体工作表面，制备了钴镍合金磷酸根离子敏感电极。结果表明，镀钴电极的响应斜率约为５１ｍＶ／ｄｅｃ，线性范围为１０＾－５￣１０＾－２ｍｏｌ·Ｌ＾－１；当电极表面钴镍合金的比例（Ｎｉ／Ｃｏ）为３／２和２／３时，响应斜率分别为３７ｍＶ／ｄｅｖ和４１ｍＶ／ｄｅｃ。线性响应范围为１０＾－４￣１０＾０１ｍｏｌ·Ｌ＾－１［Ｈ２ＰＯ４＾－］。实验     

WindowsMe注册表大揭密（下）

４、网络和浏览器类（ｌ）更改ＩＥ标题栏中文字进入 ＨＫＥＹ－ＣＵＲＲＥＮＴ－ＵＳＥＲ＼ Ｓｏｆｔｗａｒｅ＼ Ｍｉｃｒｏｓｏｆｔ＼ Ｉｎｔｅｒｎｅｔ Ｅｘｎｌｏｒｅｒ ＼Ｍａｉｎ,新增项值 Ｗｉｎｄｏｗ Ｔｉｔｌｅ,ＲＥＧ－ＳＺ类型,在其中输入自定的文字。（２）在 ＩＥ工具栏上自定义按钮进入 ＨＫＥＹ－ＣＵＲＲＥＮＴ－ＵＳＥＲ＼ Ｓｏｆｔｗａｒｅ＼ Ｍｉｃｒｏｓｏｆｔ＼ Ｉｎｔｅｍｅｔ Ｅｘｐｌｏｒｅｒ＼Ｍａｉｎ,新增子项｛１１１１ｌｌｌｌｌ－Ｆ４０Ａ－ｌｌＤ１－Ｂ７９２－４４４５５３５４０００１｝,该项命名规…     

垂直磁记录CoCr薄膜取向特性分析

用ＶＳＭ测量了不同最大外磁下ＣｏＣｒ薄膜的磁滞回线角度关系，分析了不同矫顽力Ｈｃ和不同膜厚ｔｍ薄膜的矩形比Ｓ（θ）和取向度ＯＲ（θ）特性，讨论了垂直磁记录用ＣｏＣｒ薄膜的取向特性，虽然ＣｏＣｒ合金薄膜有较好的晶体学取向（小的Ａθ５０），但低矫顽力Ｈｃ薄膜在剩磁状态磁化强度易轴明显偏离薄膜的垂直方向，而高矫顽力Ｈｃ１薄膜，无论外场怎样变化，磁化强度易轴总是垂直薄膜平面。膜厚增加，磁化强度垂直取向度变好。     

InAs薄膜Hall器件

利用分子束外延（ＭＢＥ）生长的高迁移率ＩｎＡｓ外延层成功制备了的薄膜Ｈａｌ器件。这种Ｈａｌ器件具有灵敏度高、温度特性好等优点。室温下的积灵敏度和电压相关的灵敏度分别为１１ｍＶ／ｍＡ·ｋＧｓ和４０ｍＶ／Ｖ·ｋＧｓ（灵敏度比相同掺杂的ＧａＡｓＨａｌ器件高５０％）。在（２０～７０）℃温度区域内，内阻温度系数和Ｈａｌ电压温度系数分别为８×１０－４／℃，－２×１０－３／℃（恒流驱动）和－３×１０－３／℃（恒压驱动）。     

有机物性估算系统OPES微机版本的研制（Ⅱ）软件的开发与特性

本文主要介绍有机物性估算系统ＯＰＥＳ（ＯｒｇａｎｉｃｐｈｙｓｉｃａｌＰｒｏｐｅｒｔｙＥｓｔｉｍａｔｉｏｎＳｙｓｔｅｍ）微机版本的软件特性。ＯＰＥＳ的总体结构采用将输入、输出与物性估算程序完全分离的策略：实现了系统的有效分解；物性估算程序的进一步分解则有效地解决了在ＤＯＳ环境下开发大型应用程序所面临的内存使用问题；标准化模块的设计思想既提高了软件的开发效率，又方便了今后软件的维护。本文从基础物性数据库检索方法的选择、用户界面的灵活性与智能性、系统的透明性、系统的健壮性等方面介绍了ＯＰＥＳ的使用功能。＊Ｃｏｍｐｏｎｅｎｔ：１＊２４Ｏ５Ｃ３Ｈ３Ｎ１Ｏ７－１３－１（依次是：丙烯腈的ＩＤ号、分子式、ＣＡ登录号）ＣＨ２＝ＣＨＣ＊Ｎ（丙烯腈的ＯＣＳＣＥ线性码）ａｃｒｙｌｏｎｉｔｒｉｌｅ（丙烯腈的英文名）Ｔ２（温度点数为２，温度分别是２９３。１５Ｋ，４５０．００Ｋ）２９３．１５Ｋ４５０．００ＫＰＯ（没有输入压力，压力点数为０）ＰＨ２（相态为液态）ＰＯ３（极性类别是强极性）ｂａｓｉｃｄａｔａｏｆｃｏｍｐｏｎｅｎｔＮｏ．１（从基础数据库中查到的数据）ＳＴＲＣＨ２＝ＣＨＣ＊ＮＲＭ５３．０６００（ｇ／ｍｏｌ）Ｓ（分子量，质量码Ｓ     

玩转Windows注册表之终极绝招

１个性化“桌面”设置 １）从桌面快捷图标中移除小箭头。按以下路径：＼ＨＫＥＹＣＬＡＳＳＥＳ．ＲＯＯＴ＼ ．ｐｉｆ（ＤＯＳ的快捷方式）或选＼ＨＫＥＹ＿ＣＬＡＳＳＥＳ＿ＲＯＯＴ＼． Ｉｎｋ（Ｗｉｎｄｏｗｓ的快捷方式）,鼠标左键点击右边窗口中的“ＩｓＳｈｏｒｔｃｕｔ”,按“Ｄｅｌｅｔｅ”键即可。 ２）限制修改桌面设置。按以下路径：＼ＨＫＥＹ＿ＵＳＥＲＳ＼Ｄｅｆａｕｌｔ＼Ｓｏｆｔｗａｒｅ＼Ｍｉｃｒｏｓｏｆｔ＼Ｗｉｎｄｏｗｓ＼ＣｕｒｒｅｎＶｅｒｓｉｏｎ＼Ｐｏｌｉｃｉｅｓ＼Ｅｘｐｌｏｒｅ－ｒ,双击“Ｎｏ Ｓａｖ…     

硬件报价篇

ＣＰＵＩｎｔｅｌＰ４（Ｓｏｃｋｅｔ ４７８／盒装）２．０Ｇ／１．８Ｇ／１．５Ｇ４２００／２３３０／１５３０元ＩｎｔｅｌＰ４（Ｓｏｃｋｅｔ４２３／盒装）１．７Ｇ／１.６Ｇ／１．５Ｇ １６２５／１４８０／１４６０元ＩｎｔｅｌＰⅢ（Ｓｏｃｋｅｔ３７０／盒装）１Ｇ／９３３／８６６ １４８０／１４００／１１６５元Ｉｎｔｅｌ Ｃｅｌｅｒｏｎ ＰⅡ（Ｓｏｃｋｅｔ３７０／散装）１０００／９５０／９００／８５０ ５８５／５６５／４９５／４２０元ＡＭＤ Ａｔｈｌｏｎ ＸＰ（Ｓｏｃｋｅｔ－Ａ／散装）１８００＋／１７００＋２０…     

2000全球排名前100名的软件公司

１　Ｏｒａｃｌｅ Ｃｏｒｐ．２　ＳＡＰ Ａｍｅｒｉｃａ３ Ｊ．Ｄ． Ｅｄｗａｒｄｓ４ Ｂａａｎ Ｃｏｍｐａｎｙ, ＴｈｅＳ　Ｉｎｖｅｎｓｙｓ　Ｓｏｆｔｗａｒｅ　Ｓｙｓｔｅｍｓ６ ＡＢＢ Ａｕｔｏｍａｔｉｏｎ７ ｉ２　Ｔｅｃｈｎｏｌｏｇｉｅｓ８ ＧＥＡＣ 　Ｅｎｔｅｒｐｒｉｓｅ Ｓｏｌｕｔｉｏｎｓ９ Ｉｎｔｅｎｔｉａ１０ ＳＳＡ Ｇｌｏｂａｌ Ｔｅｃｈｎｏｌｏｇｉｅｓ１１ ＩＢＳ（Ｉｎｔｅｒｎａｔｉｏｎａｌ　Ｂｕｓｉｎｅｓｓ Ｓｙｓｔｅｍｓ）１２　ＰｅｏｐｌｅＳｏｆｔ, Ｉｎｃ．１３　Ｌａｗｓｏｎ Ｓｏｆｔｗａｒｅ１…     

Pulsed-laser annealing, a low-thermal-budget technique for eliminating stress gradient in poly-SiGe MEMS structures

In this paper, we demonstrate eliminating the stress gradient in polycrystalline silicon germanium films at temperatures compatible with standard CMOS (Al interconnects) backend processing. First, we study the effect of varying the germanium concentration from 40% to 90%, layer thickness, deposition pressure from 650 to 800 mtorr and deposition temperature from 400 to 450/spl deg/C, on the mechanical properties of SiGe films. Then the effect of excimer laser annealing (248 nm, 38 ns, 780 mJ/cm/sup 2/) on stress gradient is analyzed. It is demonstrated that stress gradient can be eliminated completely by depositing Si/sub x/Ge/sub 1-x/(10%相似文献   

Low temperature carbon nanotube and hexagonal diamond deposition with photo-enhanced chemical vapor deposition

Deposition of carbon nanotube and hexagonal diamond thin films at low substrate temperature with photo-enhanced chemical vapor deposition is described here. Extensive experimentation is conducted to optimize the catalyst layer utilized for deposition by varying Al/Ni/Al metal layer thicknesses on SiO₂ coated Si substrates. The coated substrates are annealed to transform the thin metal layers into nanoparticles. Suitable catalyst layer thicknesses obtained are 3/2/3, 5/1/5 and 5/3/5 nm for Al/Ni/Al sandwich metal layers. Suitable annealing conditions are in the range of 350–450 °C for substrate temperature and from 0.22 to 10 Torr for chamber pressure in ammonia ambient for 25 min. Carbon tetrachloride (CCl₄) is used as a carbon precursor in this work. Argon to CCl₄ flow ratio is varied in 1.5–19 range, chamber pressure is varied in 3–10 Torr range, and the substrate temperature is varied in 350–450 °C range. Carbon nanotubes (CNT) growth is observed at lower chamber pressure, lower partial pressure of CCl₄, lower substrate temperature and for thin Ni catalyst layer. The optimal CNT deposition condition observed is 5 Torr total chamber pressure, 9:1 partial pressure ratio of Ar to CCl₄, 400 °C substrate temperature and 5/1/5 nm thick Al/Ni/Al catalyst layers. The hexagonal diamond deposition is observed at a higher chamber pressure, higher partial pressure of CCl₄, higher substrate temperature and for a thicker Ni catalyst layer. The optimal condition for hexagonal diamond deposition observed is 10 Torr total chamber pressure, 7:3 partial pressure ratio of Ar to CCl₄, 450 °C substrate temperature and 5/3/5 nm thick Al/Ni/Al catalyst sandwich layers.     

ICP工艺参数对刻蚀Pyrex玻璃影响的实验研究

影响ICP刻蚀的工艺参数包括反应室压力,偏置射频功率,氩气流量比率。通过正交试验的方法,以CHF3和Ar的混合物作为反应气体,利用电感耦合等离子体技术刻蚀Pyrex玻璃。并采用回归分析方法建立了二次回归方程模型描述腐蚀速率和三个因素之间的关系。实验结果表明,氩气的流量比率（总气体流量（CHF3+Ar）是恒定的）对刻蚀速率的影响最大,影响程度的主次顺序为氩气的流量比率,反应室压力,偏置射频功率。腐蚀速率和三个因素之间的数学表达式为：腐蚀速率=532.6800+2.0556×Ar+0.0127×（偏置射频功率）-0.9641×压力-0.0655×Ar2-0.0067×Ar×（偏置射频功率）+0.0217×（偏置射频功率）×压力-0.0504×（压力）2,实验结果证明数学拟合结果良好。     

基于ZnFe2O4纳米材料的低温型H2S气敏元件的设计与实现

以无机盐为原料,液相合成了ZnFe2O4纳米粉体,通过XRD,TEM等手段对粉体的晶体结构、形貌等进行表征并研制了厚膜型气敏元件.结果表明:产物为尖晶石结构,粒径尺寸分布为10 nm~30 nm,平均粒径约为14 nm.在40℃~400℃的温度范围内,采用静态配气法测定元件的气敏性能,发现ZnFe2O4气敏元件在150℃的工作温度下对体积比浓度为1×10-3 (V/V0)、1×10-4(V/V0)的H2S气体的灵敏度分别高达244.34和83.31;在此工作温度下对1×10-4(V/V0)的H2S气体响应时间2 s,恢复时间为5 s.在40℃对1×10-3(V/V0)的H2S气体的灵敏度达到111.00.     

固体电解质硫化氢气体传感器的特性研究

采用溶胶-凝胶法制备NASICON(钠离子导体)固体电解质及镍/钛复合氧化物材料。并以NASICON为离子导电层,镍/钛复合氧化物为敏感电极制作固体电解质硫化氢气体传感器。在260-380℃温度范围内,以镍/钛复合氧化物为敏感电极制作的器件对1.10-6～100.10-6硫化氢具有良好的敏感特性。在320℃时器件的灵敏度(斜率)为-72.4mV/decade。并且器件具有良好的选择性、抗湿性及响应恢复特性。器件对5.10-6,50.10-6硫化氢的响应时间为10s,4s和20s,40s。最后对器件的敏感机理做了分析。     

Gasochromic effect of palladium doped peroxopolytungstic acid films prepared by the sol-gel route

Gasochromic palladium doped peroxopolytungstic acid (Pd:P-PTA) films have been prepared using dip-coating deposition from peroxopolytungstic acid (P-PTA) sols into which PdCl₂ was added in molar ratios Pd:W=1:125, 1:100, 1:53, and 1:40. These films exhibit reversible colouring/bleaching changes when exposed to hydrogen or hydrogen/argon mixture (4%) and air, alternatively. Gasochromically coloured and bleached films were characterised using in-situ Fourier transform infrared (FT-IR) spectroscopy. The vibrational modes of as-deposited, coloured and bleached films were assigned and the polaron absorption, which characterises the IR spectra of coloured films, was detected. Colouring/bleaching kinetics of films exposed to H₂ and H₂/Ar mixture as a function of the concentration of the catalyst and temperature of heat-treatment is reported. Proton (σ_pr) and electronic (σ_el) conductivities determined from impedance spectra revealed an increase in σ_el from 10⁻⁵ S cm⁻¹ in bleached state, to 10⁻³ S cm⁻¹ in coloured state, while σ_pr remained constant (10⁻² S cm⁻¹).     

Estimation of the distribution profile of airway resistance in the lungs

The distribution profile of resistance in a series lung model consisting of airways of 23 generations with alveoli was estimated in 10 healthy subjects and 7 subjects with chronic pulmonary emphysema. Forced oscillation was applied to the subjects at the mouth using a complex wave composed of sine waves at frequencies through the range 4 to 20 Hz in 1-Hz steps. The pleural pressure was measured with a catheter-tip micromanometer, which was installed in an esophageal balloon. The frequency dependency of the pulmonary impedance was analyzed using a penalty function method, and a stable estimate of the distribution profile of resistance in the lungs was thus obtained. The central airway resistance (defined as the resistance from generation 0 to generation 7) was estimated as 1.18 +/- 0.37 cm H2O/liter/sec in the healthy subjects and 1.03 +/- 1.13 cm H2O/liter/sec in the subjects with chronic pulmonary emphysema. The peripheral airway resistance (defined as the resistance from generation 8 to generation 23) was estimated as 0.06 +/- 0.03 cm H2O/liter/sec in the healthy subjects and 6.38 +/- 3.77 cm H2O/liter/sec in the subjects with chronic pulmonary emphysema.     

Batch-processed vacuum-sealed capacitive pressure sensors

This paper reports two multitransducer vacuum-sealed capacitive barometric pressure sensors, one using single-lead and the other using multiple-leads to transfer the electrical signal out of the vacuum-sealed reference cavity. The first device operates with a resolution of 37 mtorr over a pressure range from 600 to 800 torr. The sensitivity is 27 fF/torr (3000 ppm/torr). The TCO at 750 torr is 3900 ppm/°C and the TCS is 1000 ppm/°C. The second device has a resolution of 25 mtorr over a range from 500 to 800 torr, with individual transducer sensitivity of 39 fF/torr. The TCO at 750 torr is 1350 ppm/°C and TCS is 1000 ppm/°C. Both devices have an on-chip compensation capacitor and are read out using an electronically-trimmed switched-capacitor charge integrator     

A Low-Cost 128 × 128 Uncooled Infrared Detector Array in CMOS Process

This paper discusses the implementation of a low-cost 128 times 128 uncooled infrared microbolometer detector array together with its integrated readout circuit (ROC) using a standard 0.35 mum n-well CMOS and post-CMOS MEMS processes. The detector array can be created with simple bulk-micromachining processes after the CMOS fabrication, without the need for any complicated lithography or deposition steps. The array detectors are based on suspended p⁺-active/n-well diode microbolometers with a pixel size of 40 mum times 40 mum and a fill factor of 44%. The p⁺-active/n-well diode detector has a measured dc responsivity (R) of 4970 V/W and a thermal time constant of 36 ms at 50 mtorr vacuum level. The total measured rms noise of the diode type detector is 0.69 muV for an 8 kHz bandwidth, resulting in a detectivity (D*) of 9.7 times 10⁸ cm ldr Hz^1/2/W. The array is scanned by an integrated 32-channel parallel ROC including low-noise differential preamplifiers with an electrical bandwidth of 8 kHz. The 128 times 128 focal plane array (FPA) has one row of infrared-blind reference detectors that reduces the effect of FPA fixed pattern noise and variations in the operating temperature relaxing the requirements for the temperature stabilization. Including the noise of the reference and array detectors together with the ROC noise, the fabricated 128 times 128 FPA has an expected noise equivalent temperature difference (NETD) value of 1 K for f/1 optics at 30 frames/s (fps) scanning rate. This NETD value can be decreased to 350 mK by improving the post-CMOS fabrication steps and increasing the number of readout channels.     

Molecular simulations of COFs,IRMOFs and ZIFs for adsorption-based separation of carbon tetrachloride from air

Covalent organic frameworks (COFs), metal organic frameworks (MOFs) and zeolitic imidazolate frameworks (ZIFs) have been widely studied in gas separation applications due to their large surface areas, high pore volumes, tunable pore sizes and chemical stabilities. In this study, separation performances of 153 COFs, 14 IRMOFs and 8 ZIFs were assessed for efficient removal of carbon tetrachloride (CCl₄) from CCl₄/Ar, CCl₄/N₂, CCl₄/O₂ mixtures at 298 K and infinite dilution. The top performing three materials in each group, namely, borazine-linked polymer (BLP-2H-AA), IRMOF-11 and ZIF-6 were identified. Single-component, binary mixture and quaternary mixture adsorption isotherms of argon (Ar), CCl₄, nitrogen (N₂) and oxygen (O₂) in these materials were computed at 298 K and various total pressures from 10⁻³ to 1.5 × 10⁴ kPa. Mixture adsorption selectivities and separation potentials were then calculated and the effect of relative humidity on the performance of adsorption-based CCl₄ separation was examined. Single-component and quaternary mixture diffusion coefficients of Ar, CCl₄, N₂ and O₂ were finally computed. Our results showed that ZIF-6 exhibits the highest adsorption selectivity and the highest separation potential for CCl₄/Ar, CCl₄/N₂ and CCl₄/O₂ mixtures, followed by IRMOF-11 and BLP-2H-AA. Results of this computational study will be highly useful to identify the promising materials for removal of CCl₄ from air.