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1.
Bi2Te3 powders were synthesized at 453 K from Bi(NO3)3·5H2O and Te by an aqueous chemical method, then bulk material was fabricated by hot pressing at 673 K. To investigate the effect of microstructure on the transport properties of electrons and phonons, the thermoelectric performance of the hot-pressed sample and a zone-melted crystal with similar chemical composition was measured and compared. Strong grain-boundary scattering caused a significant decrease of the thermal conductivity; however, the maximum ZT value of the hot-pressed sample was 0.28, which was lower than that of the zone-melted crystal. Further improvement could be obtained through optimization of both chemical composition and microstructure.  相似文献   

2.
Pure Bi2Te3 and Bi2Se3 nanopowders were hydrothermally synthesized, and n-type Bi2Te3−x Se x bulk samples were prepared by hot pressing a mixture of Bi2Te3 and Bi2Se3 nanopowders at 623 K, 648 K or 673 K and 80 MPa in vacuum. The phase composition of the powders and bulk samples were characterized by x-ray diffraction. The morphology of the powders was examined by transmission electron microscopy. The microstructure and composition of the bulk samples were characterized by field-emission scanning electron microscopy and energy-dispersive x-ray spectroscopy, respectively. The density of the samples increased with sintering temperature. The samples were somewhat oxidized, and the amount of oxide (Bi2TeO5) present increased with sintering temperature. The samples consisted of sheet-like grains with a thickness less than 100 nm. Seebeck coefficient, electrical conductivity, and thermal conductivity of the samples were measured from room temperature up to 573 K. Throughout the temperature range investigated, the sample sintered at 623 K had a higher power factor than the samples sintered at 648 K or 673 K.  相似文献   

3.
This work focused on the preparation of p-type Bi0.4Sb1.6Te3 bulk materials by combining mechanical alloying (MA) and hot extrusion, with emphasis on grain refinement and preferred grain orientation. Pure Bi, Sb, and Te powders were mechanically alloyed then hot extruded in the temperature range 360–450°C. Bi0.4Sb1.6Te3 bulk materials were successfully prepared by MA and hot extrusion. All the samples had sound appearance, with single phases and high densities. The hot-extruded samples had small grain sizes, and the lower the extrusion temperature, the smaller the grain sizes. The results indicated that the extrudates had preferred orientation. The basal plane was predominantly oriented parallel to the direction of extrusion. Similar Seebeck coefficients were obtained when extrusion temperature was in the range 380–420°C. Electrical resistivity decreased with increasing extrusion temperature. Thermal conductivity was relatively low, even if the extrusion temperature was 450°C. As a result, a ZT value of 1.2 was obtained at room temperature for the sample extruded at 400°C. Therefore, combination of MA and hot extrusion results in significant improvement of both the thermoelectric and mechanical performance of Bi0.4Sb1.6Te3 bulk materials.  相似文献   

4.
The present study focused on synthesis of Bi0.5Sb1.5Te3 thermoelectric powder using an oxide-reduction process. The phase structure and particle size of the synthesized powders were analyzed using x-ray diffractometry and scanning electron microscopy. The synthesized powder was sintered using the spark plasma sintering method. The thermoelectric properties of the sintered body were evaluated by measuring the Seebeck coefficient, electrical resistivity, and thermal conductivity. Bi0.5Sb1.5Te3 powder was synthesized using a combination of mechanical milling, calcination, and reduction processes, using a mixture of Bi2O3, Sb2O3, and TeO2 powders. The sintered body of the oxide-reduction-synthesized Bi0.5Sb1.5Te3 powder showed p-type thermoelectric characteristics. The thermoelectric properties of the sintered bodies depended on the reduction time. After being reduced for 2 h at 663 K, the sintered body of the Bi0.5Sb1.5Te3 powder showed a figure of merit of approximately 1.0 at room temperature.  相似文献   

5.
The p-type Bi0.4Sb1.6Te3 alloys are prepared using a new method of mechanical alloying followed by microwave-activated hot pressing (MAHP). The effect of sintering temperature on the microstructure and thermoelectric properties of Bi0.4Sb1.6Te3 alloys is investigated. Compared with other sintering techniques, the MAHP process can be used to produce relatively compact bulk materials at lower sintering temperatures owing to its unique sintering mechanism. The grain size of the MAHP specimens increases gradually with the sintering temperature and a partially oriented lamellar structure can be formed in some regions of specimens obtained. The formation of the in situ-generated nano-phase is induced by the arcing effect of the MAHP process, which enhances the phonon scattering effect and decreases the lattice thermal conductivity. A minimum lattice thermal conductivity of 0.41 W/(m·K) and a maximum figure of merit value of 1.04 are obtained at 100°C for the MAHP specimen sintered at 325°C. This technique may also be extended to other functional materials to obtain ultrafine microstructures at low sintering temperatures.  相似文献   

6.
A cost-efficient method has been developed based on the combination of hydrothermal exfoliation and spark plasma sintering (SPS) to fabricate Bi0.48Sb1.52Te3 bulk material with multiscale microstructures composed of micro- and nanosized microstructures. The thermoelectric (TE) transport properties of the bulk material with multiscale microstructures were measured along the directions parallel (||) and perpendicular (⊥) to the SPS pressing direction. It is confirmed that the anisotropy of the electrical conductivity (σ) and thermal conductivity (κ) was decreased by the transformation of the microstructure from a single microscale structure to multiscale microstructures. As compared with Bi0.48Sb1.52Te3 bulk material with single microscale microstructures, the κ value of the Bi0.48Sb1.52Te3 bulk material with multiscale microstructures was significantly reduced, the σ value was slightly decreased, while the α value was slightly increased. Thus, a maximum ZT value of 1.1 was achieved at 350 K along the direction perpendicular to the pressing direction, increased by 20%. The enhanced ZT value was mainly attributed to the significant decrease in κ induced by the multiscale microstructures. This work offers a new approach to improve TE performance by multiscale microstructural engineering.  相似文献   

7.
Two kinds of Bi0.4Sb1.6Te3 powder with different particle and grain sizes were fabricated by high-energy ball milling. Powder mixtures with varied weight ratios were consolidated by vacuum hot pressing (HP) to produce nano/ microstructured composites of identical chemical composition. From measurements of the Seebeck coefficient, electrical resistivity, and thermal conductivity of these composites, a figure of merit (ZT) value of up to 1.19 was achieved at 373 K for the sample containing 40% nanograin powder. This ZT value is higher than that of monolithic nanostructured Bi0.4Sb1.6Te3. It is further noted that the ZT value of this sample in the temperature range of 450 K to 575 K is in the range of 0.7 to 1.1. Such ZT characteristics are suitable for power generation applications as no other material with a similar high ZT value in this temperature range has been observed until now. The achieved high ZT value can probably be attributed to the unique nano/microstructure, in which the dispersed nanograin powder increases the number of phonon scattering sites, which in turn results in a decrease of the thermal conductivity while simultaneously increasing the electrical conductivity, owing to the existence of the microsized powder that can provide a fast carrier transportation network. These results indicate that the nano/microstructured Bi0.4Sb1.6Te3 alloy can serve as a high-performance material for application in thermoelectric devices.  相似文献   

8.
The p-type (Bi,Sb)2Te3/(Pb,Sn)Te functional gradient materials (FGMs) were fabricated by hot-pressing mechanically alloyed (Bi0.2Sb0.8)2Te3 and 0.5 at.% Na2Te-doped (Pb0.7Sn0.3)Te powders together at 500°C for 1 h in vacuum. Segment ratios of (Bi,Sb)2Te3 to (Pb,Sn)Te were varied as 3:1, 1.3:1, and 1:1.6. A reaction layer of about 350-μm thickness was formed at the (Bi,Sb)2Te3/(Pb,Sn)Te FGM interface. Under temperature differences larger than 340°C applied across a specimen, superior figures of merit were predicted for the (Bi,Sb)2Te3/(Pb,Sn)Te FGMs to those of (Bi0.2Sb0.8)2Te3 and (Pb0.7Sn0.3)Te. With a temperature difference of 320°C applied across a specimen, the (Bi,Sb)2Te3/(Pb,Sn)Te FGMs with segment ratios of 3:1 and 1.3:1 exhibited the maximum output powers of 72.1 mW and 72.6 mW, respectively, larger than the 63.9 mW of (Bi0.2Sb0.8)2Te3 and the 26 mW of 0.5 at.% Na2Te-doped (Pb0.7Sn0.3)Te.  相似文献   

9.
Here, a novel synthesis for near monodisperse, sub‐10 nm Bi2Te3 nanoparticles is reported. A new reduction route to bismuth nanoparticles is described, which are then applied as starting materials in the formation of rhombohedral Bi2Te3 nanoparticles. After ligand removal by a novel hydrazine hydrate etching procedure, the nanoparticle powder is spark plasma sintered to a pellet with preserved crystal grain sizes. Unlike previous works on the properties of Bi2Te3 nanoparticles, the full thermoelectric characterization of such sintered pellets shows a highly reduced thermal conductivity and the same electric conductivity as bulk n‐type Bi2Te3.  相似文献   

10.
Introducing nanoinclusions in thermoelectric (TE) materials is expected to lower the lattice thermal conductivity by intensifying the phonon scattering effect, thus enhancing their TE figure of merit ZT. We report a novel method of fabricating Bi0.5Sb1.5Te3 nanocomposite with nanoscale metal particles by using metal acetate precursor, which is low cost and facile to scale up for mass production. Ag and Cu particles of ??40?nm were successfully near-monodispersed at grain boundaries of Bi0.5Sb1.5Te3 matrix. The well-dispersed metal nanoparticles reduce the lattice thermal conductivity extensively, while enhancing the power factor. Consequently, ZT was enhanced by more than 25% near room temperature and by more than 300% at 520?K compared with a Bi0.5Sb1.5Te3 reference sample. The peak ZT of 1.35 was achieved at 400?K for 0.1?wt.% Cu-decorated Bi0.5Sb1.5Te3.  相似文献   

11.
Non‐invasive local probes are needed to characterize bulk defects in binary and ternary chalcogenides. These defects contribute to the non‐ideal behavior of topological insulators. The bulk electronic properties are studied via 125Te NMR in Bi2Te3, Sb2Te3, Bi0.5Sb1.5Te3, Bi2Te2Se, and Bi2Te2S. A distribution of defects gives rise to asymmetry in the powder lineshapes. The Knight shift, line shape, and spin‐lattice relaxation are investigated in terms of how they affect carrier density, spin‐orbit coupling, and phase separation in the bulk. The present study confirms that the ordered ternary compound Bi2Te2Se is the best topological insulator candidate material at the present time. These results, which are in good agreement with transport and angle‐resolved photoemission spectroscopy studies, help establish the NMR probe as a valuable method to characterize the bulk properties of these materials.  相似文献   

12.
Ball milling with subsequent spark plasma sintering (SPS) was used to fabricate bulk nanothermoelectrics based on Bi x Sb2?x Te3. The SPS technique enables reduced size of grains in comparison with the hot-pressing method. The electrical and thermal conductivities, Seebeck coefficient, and thermoelectric figure of merit as functions of temperature and alloy composition were measured for different sintering temperatures. The greatest value of the figure of merit ZT = 1.25 was reached at the temperature of 90°C to 100°C in Bi0.4Sb1.6Te3 for sintering temperature of 450°C to 500°C. The volume and quantitative distributions of size of coherent dispersion areas (CDA) were calculated for different sintering temperatures. The phonon thermal conductivity of nanostructured Bi x Sb2?x Te3 was investigated theoretically taking into account phonon scattering on grain boundaries and nanoprecipitates.  相似文献   

13.
Thermoelectric Bi2Te3 alloy nanopowders with different morphologies were synthesized by hydrothermal processes with different surfactants. The nanopowders were hot-pressed into pellets, and their thermoelectric properties were investigated. The results show that the morphologies of the nanopowders have remarkable effects on the thermoelectric properties of the hot-pressed bulk pellets. A suitable microstructure of the bulk pellet prepared from flower-like nanosheets was found, having a lower electrical resistivity, larger Seebeck coefficient, and lower thermal conductivity, resulting in a high figure of merit ZT ≈ 1.16. The effects of the nanopowders with different morphologies on the microstructure and thermoelectric properties of hot-pressed bulk pellets are discussed.  相似文献   

14.
Bi x Sb2−x Te3 bulk alloys are known as the best p-type thermoelectric materials near room temperature. In this work, single-phase Bi x Sb2−x Te3 (x = 0.2, 0.25, 0.3, 0.34, 0.38, 0.42, 0.46, and 0.5) alloys were prepared by spark plasma sintering (SPS) using mechanical alloying (MA)-derived powders. A small amount (0.1 vol.%) of SiC nanoparticles was added to improve the mechanical properties and to reduce the thermal conductivity of the alloys. The electrical resistivity decreases significantly with increasing ratio of Sb to Bi in spite of the weaker decreasing trend in Seebeck coefficient, whereby the power factor at 323 K reaches 3.14 × 10−3 W/mK2 for a sample with x = 0.3, obviously higher than that at x = 0.5 (2.27 × 10−3 W/mK2), a composition commonly used for ingots. Higher thermal conductivities at low temperatures are obtained at the compositions with lower x values, but they tend to decrease with temperature. As a result, higher ZT values are obtained for Bi0.3Sb1.7Te3, with a maximum ZT value of 1.23 at 423 K, about twice the ZT value (about 0.6) of Bi0.5Sb1.5Te3 at the same temperature.  相似文献   

15.
A series of thermoelectric nanocomposite samples were prepared by integrating Bi2Se3 nanoparticles into a bulk Bi2Te3 matrix. Primarily, spherical Bi2Se3 nanoparticles with diameter of ~30 nm were synthesized by combining bismuth acetate with elemental Te in oleic acid solution. Bi2Te3-based nanocomposite samples were prepared by consolidating the appropriate quantity of Bi2Se3 nanoparticles with the starting elements (Bi and Te) using typical solid-state synthetic reactions. The microstructure and composition of the Bi2Te3-based nanocomposites, as well as the effects of the Bi2Se3 nanoparticles on their thermoelectric properties, are investigated. Transmission electron microscopy observation of the Bi2Te3-based nanocomposites reveals two types of interface between the constituent materials, i.e., coherent and incoherent, depending on the Bi2Se3 concentration. The Bi2Se3 nanoparticles in the Bi2Te3 matrix act as scattering centers for a wider range of phonon frequencies, thereby reducing the thermal conductivity. As a result, the maximum ZT value of 0.75 is obtained for the Bi2Te3 nanocomposite with 10 wt.% Bi2Se3 nanoparticles at room temperature. It is clear that the reduction in the thermal conductivity plays a central role in the enhancement of the ZT value.  相似文献   

16.
In this work, p-type nanoscale ??soft superlattices?? consisting of multilayer stacks of 25?nm Sb2Te3 on 25?nm (Bi0.2Sb0.8)2Te3 were fabricated by nanoalloying. With this technique, nanoscale layers of the elements Bi, Sb, and Te are deposited by sputtering onto a Si/SiO2 substrate and subsequently annealed to induce interdiffusion and a solid-state reaction to form the final superlattices. Different combinations of annealing temperatures were used in the annealing process. The in-plane electronic properties (Seebeck coefficient, electrical conductivity, charge carrier concentration, and carrier mobility) of these soft superlattices were examined. The cross-plane thermal conductivity was determined using time-domain thermal reflectance (TDTR). Secondary-ion mass spectrometry (SIMS) depth profiles reveal that the nanostructured thin films exhibit high stability against thermal interdiffusion during the annealing process. X-ray patterns of the samples display very strong texture with preferred c-orientation of the crystallites after the heat treatment. Scanning electron microscopy (SEM) cross-section images of the films show distinctly polycrystalline structure with increasing grain size for higher annealing temperatures, as confirmed by x-ray diffraction (XRD) analysis. Very high power factors exceeding 40???W/cm?K2, similar to values for bulk single crystals with comparable compositions, are observed for the soft superlattices. The nanostructure appears to be stable up to 300°C. For a sample annealed at 150°C, a thermal conductivity as low as 0.45?W/mK was determined. Based on different assumptions concerning the degree of anisotropy of the transport properties, a cross-plane figure of merit ZT of 0.6 to 1.9 can be estimated for the thin films annealed at 300°C.  相似文献   

17.
Embedding nanosized particles in bulk thermoelectric materials is expected to lower the lattice thermal conductivity by enhancing the degree of interface phonon scattering, thus improving their thermoelectric figure of merit ZT. We have developed a wet chemical process to fabricate Bi0.5Sb1.5Te3-based thermoelectric nanocomposites which include nanometer-sized metal particles. By simple solution mixing of metal acetate precursors and Bi0.5Sb1.5Te3 powders in ethyl acetate as a medium for homogeneous incorporation, it is possible to apply various types of metal nanoparticles onto the surfaces of the thermoelectric powders. Next, bulk Bi0.5Sb1.5Te3 nanocomposites with homogeneously dispersed metal nanoparticles were fabricated using a spark plasma sintering technique. The lattice thermal conductivities were reduced by increasing the long-wavelength phonon scattering in the presence of metal nanoparticles, while the Seebeck coefficients increased for a few selected metal-decorated nanocomposites, possibly due to the carrier-energy-filtering effect. Finally, the figure of merit ZT was enhanced to 1.4 near room temperature. This approach highlights the feasibility of incorporating various types of nanoparticles into an alloy matrix starting by wet chemical routes, which is an effective means of improving the thermoelectric performance of Bi-Te-based alloys.  相似文献   

18.
The dependence of the thermoelectric properties of the nanostructured bulk (Bi,Sb)2Te3 material on the composition and the spark plasma-sintering (SPS) temperature T SPS has been studied. It has been revealed that the Bi0.4Sb1.6Te3 solid solution sintered at a temperature of 450–500°C has a thermoelectric figure of merit ZT = 1.25–1.28. The dependence of thermoelectric properties on the sintering temperature T SPS above 400°C is correlated to the transformation of the fine structure of the material due to the rearrangement of point vacancy-donor defects in the process of repeated recrystallization. It has been established that point structural defects make a considerable contribution to the formation of the thermoelectric properties of nanostructured material.  相似文献   

19.
We report on the successful hydrothermal synthesis of Bi0.5Sb1.5Te3, using water as the solvent. The products of the hydrothermally prepared Bi0.5 Sb1.5Te3 were hexagonal platelets with edges of 200–1500 nm and thicknesses of 30–50 nm. Both the Seebeck coefficient and electrical conductivity of the hydrothermally prepared Bi0.5Sb1.5Te3 were larger than those of the solvothermally prepared counterpart. Hall measurements of Bi0.5Sb1.5Te3 at room temperature indicated that the charge carrier was p-type, with a carrier concentration of 9.47 × 1018 cm−3 and 1.42 × 1019 cm−3 for the hydrothermally prepared Bi0.5Sb1.5Te3 and solvothermally prepared sample, respectively. The thermoelectric power factor at 290 K was 10.4 μW/cm K2 and 2.9 μW/cm K2 for the hydrothermally prepared Bi0.5Sb1.5Te3 and solvothermally prepared sample, respectively.  相似文献   

20.
The Sb-Te system is re-modeled using the calculation of phase diagram (CALPHAD) technique. The liquid phase is modeled as (Sb, Sb2Te3, Te) using the associate model and as (Sb3+) p (Te2?,Te,Va) q using the ionic model. The solution phases rhom(Sb) and hex(Te) are described as substitutional solutions. Two compounds, delta and gamma, are treated as (Sb)0.4(Sb,Te)0.6 according to their homogeneity ranges, while the compound Sb2Te3 follows a strict stoichiometry. A set of self-consistent thermodynamic parameters is obtained. Using these thermodynamic parameters, the experimental Sb-Te phase diagram, mixing enthalpies of liquid at 911 K and 935 K, activities of Sb and Te in liquid at 911 K and 1023 K, and Gibbs energy of liquid at 911 K, is well reproduced by the calculations. And the calculated enthalpy of formation, enthalpy of fusion, and heat capacity of Sb2Te3 are also in fairly good agreement with all the available experimental data.  相似文献   

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