Comparison of high-pressure dc-sputtering and pulsed laser deposition of superconducting YBa2Cu3O x thin films

Superconducting YBa₂Cu₃O_x thin films were deposited on NdGaO₃ (110) substrates using two different techniques: dc sputtering at high oxygen pressure and pulsed laser deposition. The structure, electrical properties, and surface morphology of the obtained films were compared. The superior crystal quality of dc-sputtered films fabricated at the same temperature and at oxygen pressure of the same range as for laser-deposited films can be explained by a lower deposition rate providing time for recrystallization processes. The re-evaporation becomes significant for dc sputtering at high deposition temperatures and results in Badeficient films. The high mobility of atoms on the surface of the growing film during laser deposition helps in the formation of smoothc-oriented areas of the film.     

Preparationin situ and properties of thin films HTSC YBa2Cu3O x

We describe the technique ofin situ preparation of thin (d=0, 1-1μm) YBCO films by the RF magnetron sputtering of the ceramic target in the argon-oxygen atmosphere on the heated substrates, and report the preliminary results of investigation of the multilayer structure based on such films.     

Transport properties of oxygen-deficient YBa2Cu3O7−x thin films

We report on measurements of the in-plane resistivityρ and Hall coefficientR _H (B∥c) of various oxygen-deficient epitaxial films of YBa₂Cu₃O_7?x in the normal state. The superconducting transition temperaturesT _c of the samples vary from 14 to 90 K. Both the resistivity and the Hall coefficient exhibit a strong dependence on the oxygen content and the temperature. Asx increases,T _c decreases continuously, whileρ andR _H gradually increase in magnitude. Furthermore, also the characteristic linear dependences ofραT andR _Hα T ^?1 of the highly doped compounds changes to a nonlinear behavior for the samples withT _c lower than 60 K. The unusual doping and temperature dependence ofR _H will be compared to the predictions of our calculations, based on a two-dimensional tight-binding model using the relaxation-time approximation. The model considers also the next-nearest-neighbor hopping, which strongly influences the predicted Hall coefficient. Additionally, the cotangent of the Hall angle cot(Θ _H ) is discussed in the framework of the two-dimensional Luttinger liquid theory.     

YBa2Cu3O x superconducting thin films prepared by low temperature vacuum codeposition

Y-Ba-Cu-O films were prepared by low temperature codeposition of three components. The Y and Cu contents were evaporated from metallic sources, while Ba was vacuum-evaporated from Ba, BaO and BaF₂ sources in separate codeposition experiments. The lowest temperature at which superconducting YBa₂Cu₃O _x thin films (about 0.5μm thick) preparedin situ was near 500°C. This process enables preparation of superconducting films on various substrates (SrTiO₃, MgO, Al₂O₃, Si) without a buffer layer. Zero-resistance critical temperature was as high as 88 K and the critical current density was 10⁴ A/cm² at 4.2 K. The morphology of the films was granular with disordered grain orientation, the average grain size being typically 0.5μm.     

Temperature and spectral dependences of persistent photoconductivity in YBa2Cu3O x thin films

Temperature and spectral dependences of photoinduced changes of resistance were measured in YBa₂Cu₃O _x thin films with oxygen content ranging as 6.35 <x < 6.75. The absolute value of efficiency of initiation of photoinduced changes decreases with increase in oxygen content, but the position of peaks in the spectral dependence does not change with a change ofx. Temperature dependences of efficiency have an anomaly atT∽220 K, which is present in all the samples studied, and correlates with anomalies observed by other experimental techniques. Qualitatively similar temperature and spectral dependences of efficiency for the samples in both the insulating and metallic phases may be considered as an indication that the persistent photoconductivity effect in YBCO on both sides of the metal-insulator transition has a common origin.     

Microwave properties of highly oriented YBa2Cu3O7-δ superconducting thin films

We have performed millimeter-wave frequency (94 GHz) measurements on high-quality YBa₂Cu₃O₇-δ superconducting films on yttrium-stabilized (100) ZrO₂ and MgO substrates. The ～0.2μm thin films fabricated by magnetron sputteringin situ with the YBa₂Cu₃O₇-δ powders as target exhibit superconducting transition temperatures up to 88 K. The critical current density of 6×10⁵ A/cm² at 77 K and the X-ray diffraction spectrum as well as scanning electron microscope photographs indicate these thin films are fullyc-axis oriented, extremely high in density, and universally homogeneous. Millimeter-wave surface resistances have been measured on a hemisphere open resonator in the temperature range of 20 K toT _c and beyond. The surface resistance at 94 GHz and 77 K for these films is found to be about 30 mΩ, nearly 1/4 that for copper, and a drop of two orders in the surface resistance within 4 K is observed, which indicates that these films are good materials for applications in the millimeter-wave range, especially for fabricating microwave devices. We observed such low surface resistance in these thin films due to the near absence of grain and phase boundaries coupled with a high degree of crystalline orientation.     

Charge-transfer in YBa2Cu3O x

The charge-transfer hypothesis is shown to be inconsistent with data for YBa₂Cu₃O_x: (i) The two-step behavior ofT _c(x) (with jumps from zero to ≈60 K and then to ≈90 K) is not reflected as a similar, statistically significant two-step behavior in the bond-valence-sum charge of cuprate-plane Cu ions (as once believed), (ii) as a consequence of the law of conservation of charge, the derivatives of the layer charges with respect to oxygen contentx for both the Ba-O layers and the charge-reservoir Cu-O chains have the opposite signs to those predicted, and (iii) the charge-transfer observed for superconducting YBa₂Cu₃O_x is not sufficient to produce superconductivity, as demonstrated by insulating PrBa₂Cu₃O_x, which has virtually the same layer charges.     

Growth and characterization of laser-deposited Ag-doped YBa2Cu3O7−x thin films on bare sapphire

Microstructural and superconducting properties of YBa₂Cu₃O_7−x thin films grownin situ on bare sapphire by pulsed laser deposition using YBa₂Cu₃O_7−x targets doped with 7 and 10 wt% Ag have been studied. Ag-doped films grown at 730°C on sapphire have shown very significant improvement over the undoped YBa₂Cu₃O_7−x films grown under identical condition. A zero resistance temperature of 90 K and a critical current density of 1·2×10⁶ A/cm² at 77 K have been achieved on bare sapphire for the first time. Improved connectivity among grains and reduced reaction rate between the substrate and the film caused due to Ag in the film are suggested to be responsible for this greatly improved transport properties.     

Microwave Power Dependence of Surface Resistance of High-Temperature Superconductor YBa2Cu3O y Films by Dielectric Resonator Method

The microwave power dependence of the surface resistance of YBa₂Cu₃O_y films of two different surface morphologies was measured using the dielectric resonator method. The dielectric resonator consisted of a high-quality sapphire rod sandwiched between two superconductor films. Measurements showed that the microwave power dependence of the surface resistance strongly depended on the surface morphology of the YBa₂Cu₃O_y film though the surface resistance of those films at low microwave power was comparable. In conclusion, the surface morphology is one of the reasons of the power dependence which is crucial for high power applications.     

Measurement of the surface resistance of YBa2Cu3O7−x thin films using stripline resonators

We review methods of measuring surface resistance (R _s ) of thin films using stripline resonators, and present our measurements of theR _s of YBa₂Cu₃O_7?x films as a function of frequency, temperature, and r.f. magnetic field. The films were deposited on LaAlO₃ substrates by two methods: (1) electron-beam coevaporation of Y, BaF, and Cu followed by annealing in O₂, and (2) single-targetin situ sputtering. The measurements were obtained at frequencies from 0.4 to 10 GHz, temperatures from 4 to 90 K, and an r.f. magnetic field range from 0 to 30 Oe. At low temperature and low r.f. field at 0.4 GHz, theR _s values obtained for the two deposition methods are approximately 7×10^?6 and 4×10^?6 Ω, respectively.     

Enhanced dielectric properties of modified Ta2O5 thin films

 Tantalum oxide (Ta₂O₅) is a promising high dielectric constant material for the DRAM applications because of its ease of integration compared to other complex oxide dielectrics. The dielectric constant and thermal stability characteristics of bulk Ta₂O₅ samples were reported to enhance significantly through small substitutions of Al₂O₃. However, this improvement in the dielectric constant of (1-x)Ta₂O₅-xAl₂O₃ is not clearly understood. The present research attempts to explain the higher dielectric constant of (1-x)Ta₂O₅-xAl₂O₃ by fabricating thin films with enhanced dielectric properties. A higher dielectric constant of 42.8 was obtained for 0.9Ta₂O₅–0.1Al₂O₃ thin films compared to that reported for pure Ta₂O₅ (25–30). This increase was shown to be closely related to a-axis orientation. Pure Ta₂O₅ thin films with similar a-axis orientation also exhibited a high dielectric constant of 51.7, thus confirming the orientation effect. The leakage current properties and the reliability characteristics were also found to be improved with Al₂O₃ addition. Received: 24 November 1998 / Reviewed and accepted: 7 December 1998     

Preparation of thick YBa2Cu3O7−δ films by dc magnetron sputtering

High-temperature superconducting films up to 3.6 μm thick were obtained and their properties requisite for the development of microwave devices were investigated. It is shown that YBa₂Cu₃O_7−δ films of thickness exceeding 3–5λ _L may be obtained for use in the microwave range. Pis’ma Zh. Tekh. Fiz. 24, 89–94 (October 12, 1998)     

Electron paramagnetic resonance studies in the oxides Bi2Sr2Ca1−x Gd x Cu2O y

We have recently reported our results on magnetic susceptibility and microwave absorption studies on Bi₂Sr₂Ca_1−x Gd _x Cu₂O _y and Bi₂Sr₂Ca_1−x Y _x Cu₂O _y . In the present work two important observations of these investigation, viz, the dependence ofT _c on Gdconcentration and the absence of EPR-signals of Gd and Cu, are considered in greater detail. It is suggested that the microwave absorption by fluxon lattice might be playing one of the important and effective pathways for electron spin relaxation resulting in nonobservation of EPR signals.     

Microwave surface resistance of epitaxial YBa2Cu3O7 thin films at 18.7 GHz measured by a dielectric resonator technique

We used a dielectric resonator technique for highly sensitive measurements of the temperature dependence of the microwave surface resistanceR _s of 1×1 cm² superconducting films at 18.7 GHz. It consists of a sapphire disc positioned on the film under investigation within a copper cavity which is acting as a radiation shield. In the TE_01δ oscillation mode the highly reproducible quality factor of about 10⁵ results in a sensitivity of ±50μΩ forR _s measurements. The temperature dependence ofR _s can be measured up to values as high as 1 Ω. We have investigated several YBa₂Cu₃O₇ thin films prepared by high oxygen pressure d.c. sputtering on LaAlO₃ and NdGaO₃. Our best films exhibit a pronounced nonlinear behavior of the d.c. resistivityρ(T) withρ(300K)/ρ(100K) values of about 3.7. Those films show, besides the initial fall-off just belowT _c , a further strong decrease ofR _s at low temperatures. This was observed both at 18.7 GHz and 87 GHz, as measured by a conventional cavity end plate replacement technique. ForT?T_c/2 these films exhibit an exp (?αT _c/T) dependence ofR _s withα-values around 0.4. These observations may be explained by a superconducting energy gap with 2Δ/kT _c≈0.8 for charge carriers localized in the CuO chains for YBa₂Cu₃O₇.     

Geometrical model and experimental evidence for the growth of Ag-doped YBa2Cu3O7−x thin films

The improvement in the properties of laser-ablated Ag-doped YBa₂Cu₃O_7?x (YBCO) thin films in both normal and superconducting states has been interpreted using a growth model. The model is simple and is based on the widely accepted characteristics of Ag such as its flux action at high temperature and nonreactivity with YBCO phase.