红外辐照退火砷离子注入硅的后热处理特性研究

本文研究了硅中砷离子注入层经红外辐照退火后的热处理特性,测量了表面薄层电阻随后热处理温度的变化关系.实验结果表明,对于红外辐照~(75)As离子注入样品,表面薄层电阻随后热处理温度的升高而发生规律性的变化,在900℃附近达到最小值,此时注入杂质的电激活率大于100%.     

高浓度注砷硅的红外瞬态辐照退火

用高温石墨作为红外辐射源,对高浓度的注砷硅进行了瞬态(13 秒)辐照,达到非常好的退火效果.对于10~(16)cm~(-2)剂量的注砷硅可达到100％的电激活,且损伤恢复比热退火(1100℃,30分)情况要好,引起的注入原子的再分布比常规的高温热退火要小得多.用本方法退火的注砷硅PN结具有良好的电特性。因此,在 VLSI工艺中它是一种很有应用前景的离子注入退火技术.     

硅中硼离子注入层的卤钨灯辐照快速退火研究

本文研究了SiO_2掩蔽膜硼离子注入硅的卤钨灯辐照快速退火,测量了注入层表面薄层电阻与退火温度及退火时间的关系,得到了最佳的退火条件。对于采用920(?)SiO_2膜,25keV、1×10~(15)cm~(-2)的~(11)B离子注入样品,经不同时间卤钨灯辐照退火后,测量了注入层的载流子浓度分布,并与950℃、30分钟常规炉退火作了比较。结果表明,卤钨灯辐照快速退火具有电激活率高、注入杂质再分布小以及快速、实用等优点。     

用椭偏光法研究离子注入层的红外辐照再结晶机理

本文用椭偏光法结合阳极氧化剥层技术研究了(31)~P离子注入硅的损伤分布及在红外辐照快速退火中的再结晶机理。结果表明,对于1OOkeV,5×10_(14)cm~(-2)(31)~P离子注入硅,注入区形成了970(?)的隐埋非晶层。将此样品在1100℃源温下辐照30秒,非晶层从与单晶衬底的交界面处向表面固相外延再结晶240(?),外延速率为8(?)/秒。     

硅中离子注入层的红外瞬态退火及其浅结的制备

本文研究了硅中离子注入层的红外瞬态退火.对于注As~+和注B~+样品的测试表明,红外瞬态退火具有电激活率高、缺陷消除彻底和注入杂质再分布小等优点.对于注入剂量为1×10~(15)As~+cm~(-2)的样品和3.6×10~(14)B~+cm~(-2)的样品,经红外瞬态退火后电激活率分别达到了90%和95%.用红外瞬态退火样品制作的台面管的反向漏电流,在相同的测试条件下,只是常规热退火样品的一半左右.对于通过650(?)SiO_2膜,25keV、5×10~(14)cm~(-2)剂量的硼离子注入样品,经红外瞬态退火后得到了结深分0.20μm的浅结.     

快速热退火离子注入硅时的磷扩散

研究了快速热退火时离子注入硅中磷的扩散。我们依靠注入的剂量发现了两种截然不同的扩散行为。低剂量(1×10~(14)cm~(-2))P~+注入硅发现有一个剖面再分布,该再分布在900℃温度下退火10秒钟即可观察到,但在800～1150℃温度范围与温度无关。这个初给再分布比起通常的扩散系数数质所预计的要快得多。高剂量(2×10~(15)cm~(-2))P~+注入硅经短时(10秒)退火后掺杂剂分布的变宽现象与温度有密切关系,其实验分布与浓度增强扩散分布是一致的。     

砷注入硅快速热退火缺陷的HVEM观察

随着集成度的提高,要求芯片的线条进一步缩小,但根据按比例缩小原则,纵向尺寸也必须减小。因此VLSI要求p—n结的结深越来越浅。离子注S和快速热退火为制备这种高浓度浅p—n结提供了一种要求的手段。当然离子注入产生的辐照缺陷及其在退火过程中的行为就自然受到人们的注意。由于砷在硅中固溶度较高、扩散系数小,离子注入的平均投影射程小等一系列特点,在制备高浓度、浅N+P结方面引起了相当的重视。本文研究了砷注入硅快速热退火后缺陷的特性。即砷注入硅后经不同温度不同时间退火后的缺陷。所用的试样为6—8ΩcmP—型<100>硅片,经室温120kev砷离子注入,剂量为1×10~(16)cm~(-2),分别在900℃、1000℃、1080℃和1150℃不同时间红外退火。並利用霍尔效应和剥层技术测定载流子浓度分布,     

瞬态退火注砷硅亚稳态浓度的后热处理特性研究

高剂量As注入Si的样品,经红外瞬态辐照退火能获得亚稳态载流子浓度(体浓度可高达6×10~(20)cm~(-3)),明显超过800℃时热平衡条件下As在Si中的固溶度值(1.9×10~(10~(20)cm~(-3)).红外瞬态退火后再进行不同温度(室温-800℃)的后热处理,发现在处理温度390℃以上时,激活的杂质浓度随着时间加长而显著下降.本文报道上述失活现象的实验研究结果(霍耳效应测试和阳极氧化剥层技术、TEM、RBS随机谱、沟道谱和沟道产额角分布等实验结果),通过对这些实验的综合分析,讨论了激活As原子的失活机理.     

硅中离子注入层的红外瞬态退火及退火后残留深能级缺陷的DLTS研究

本文研究了硅中离子注入层的红外瞬态退火,证实了它与常规热退火具有相同的再结晶机理——固相外延再结晶过程.对于注As~+和注B~+样品的测试表明,红外瞬态退火具有电激活率高、缺陷消除彻底和注入杂质再分布小等优点.为了研究退火后残留深能级缺陷的电特性,对于离子注入MOS结构进行了DLTS测试.对于通过920A SiO_2膜,注入剂量为 1×10~(12)cm~(-2)B~+、能量为60 keV的样品,经常规热退火和红外瞬态退火后分别测到了深能级 E_T-E_v=0.24±0.02eV和E_r-E_v=0.29±0.02eV;并对引入这些深能级的缺陷进行了讨论.     

质子注入直拉硅中缺陷的研究

对比电子辐照和氦、硼离子注入,研究了质子注入n型和P型直拉硅中产生的缺陷及其退火行为.指出我们所观察到的n型样品中的电子陷阱E(0.30)是质子注入所特有的,它很可能是与氢有关的深能级.与电子辐照对比,离子注入在E(0.41)附近引入了除双空位及磷空位以外的新的缺陷.质子注入引入的氢能使n型样品中各电于陷阱的退火温度有不同程度的降低;在P型样品中,当质子注入剂量为5 × 10~(10)/cm~2与1.5 × 10~(11)/cm~2时,各空穴陷阱的退火温度降低并会聚在150℃,但当质子注入剂量大于或等于5 × 10~(11)/cm~2时,注入的氢对各空穴陷阱的退火没有明显的影响.对以上现象作了分析与讨论.     

热压硫化锌后处理改性研究及其高温特性分析

硫化锌(ZnS)是一种重要的红外光学材料,在8～10 m波段范围内拥有较高的透过率,广泛应用于导弹整流罩、红外天文卫星、红外光谱仪、测量仪和热像仪等领域。采用高温后处理工艺方法可促进晶粒生长,并起到消除热压多晶ZnS内部的残余六方相和气孔的作用,进而可提升材料光学透过性能。对于厚度5 mm的热压ZnS试验片,1.064 m处透过率达到60%,2～10 m平均透过率达到73%。经后处理的光学窗口其抗冲击性能测试结果表明,材料保留了原有热压ZnS材料的力学特性,且在400 ℃的条件下能够满足光电探测系统清晰成像的要求。     

Perylrene-based n-type field-effect transistors prepared by the neutral cluster beam deposition method

We present the first application of the neutral cluster beam deposition (NCBD) method to prepare n-type organic thin-film transistors with a top-contact structure based on N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13). Systematic analysis was carried out to examine the effects of surface passivation and thermal post-treatment on the morphology and crystallinity of P13 active layers and device performance, together with operational stability as a function of time. The high room-temperature field-effect mobility of 0.58 cm²/Vs for the thermally post-treated devices was obtained under ambient conditions. The comparative study of the transport mechanisms responsible for conduction of the electron carriers over a temperature range of 10–300 K indicated that surface modification and thermal post-treatment decrease total trap density and activation energy for carrier transport by reducing structural disorder.     

用于半导体激光器热沉的金刚石膜/Ti/Ni/Au金属化体系的研究

提出了一种用于半导体激光器热沉的金刚石膜/ Ti/ Ni/ Au金属化体系.采用金属化前期预处理、电子束蒸镀技术和后续低温真空热处理,金属层和金刚石膜之间获得了良好的结合强度.AES分析表明Ti/ Ni/ Au金刚石膜金属化体系中,Ni层起到了良好的阻挡效果;XRD显示预处理过的金刚石膜,镀膜后经过6 73K,2 h低温真空热处理,Ti/金刚石膜界面形成Ti O和Ti C;RBS分析进一步证实该金属化体系在6 73K,1h真空加热条件下具有良好的热稳定性.采用完全相同的半导体激光器结构,金刚石膜热沉的热阻仅为氮化铝热沉的4 0 % .     

Low-Dimensional 2-thiopheneethylammonium Lead Halide Capping Layer Enables Efficient Single-Junction Methylamine-Free Wide-Bandgap and Tandem Perovskite Solar Cells

Wide-bandgap (WBG) perovskite solar cells (PSCs) have garnered significant attention for their potential applications in tandem solar cells. However, their large open-circuit voltage (V_OC) deficit and serious photo-induced halide segregation remain the main challenges that impede their applications. Herein, a post-treatment strategy without thermal annealing is presented to form a 2D top layer of 2-thiopheneethylammonium lead halide (n = 1) on WBG perovskites. This thermal annealing-free post-treatment method can more effectively passivate the defects of WBG methylamine (MA)-free formamidinium/cesium lead iodide/bromide perovskite films and suppress photo-induced perovskite phase segregation, as compared with the thermal annealing method that yields multi-2D phases. The resulting opaque and semi-transparent 1.66 eV-bandgap perovskite solar cells deliver maximum power conversion efficiencies of 21.47% (a small V_OC deficit of 0.43 V) and 19.11%, respectively, both of which are among the highest reports for inverted MA-free WBG PSCs. Consequently, four-terminal all-perovskite tandem cells realize a remarkable efficiency of 26.64%, showing great promise for their applications in efficient multi-junction tandem solar cells.     

Effects of NH3-plasma nitridation on the electricalcharacterizations of low-k hydrogen silsesquioxane with copperinterconnects

The interaction between copper interconnects and low-k hydrogen silsesquioxane (HSQ) film was investigated using a Cu/HSQ/Si metal insulation semiconductor capacitor and NH₃ plasma post-treatment. Owing to serious diffusion of copper atoms in HSQ film, degradations of the dielectric properties are significant with the increase of thermal stress. The leakage current behavior in high field conduction is well explained by the Poole-Frenkel (P-F) mechanism. By applying NH₃-plasma treatment to the HSQ film, however, the leakage current is decreased and P-F conduction can be significantly suppressed. In addition, the phenomenon of serious Cu penetration is not observed by means of electrical characteristic measurements and secondary ion mass spectroscopy (SIMS) analysis even in the absence of diffusion barrier layers. This indicates the copper diffusion in low-k HSQ film can he effectively blocked by NH₃ plasma post-treatment     

High mobility poly-Ge thin-film transistors fabricated on flexible plastic substrates at temperatures below 130°C

Depletion-mode poly-Ge thin-film transistors (TFTs) with an effective hole mobility of 110 cm²/Vs and an ON/OFF ratio of 10⁴ have been fabricated on flexible polyethylene therephtalate (PET) substrates, taking advantage of a novel stress-assisted crystallization technique. Proper manipulation of an otherwise destructive mechanical stress leads to a drastic drop of crystallization temperature from 400°C to 130°C. External compressive stress is transferred to the Ge/PET interface by bending the flexible substrate inward, during the thermal post-treatment. Proper patterning of the a-Ge layer before thermomechanical post-treatment leads to a minimal crack density in the processed poly-Ge layer. Reduction in the crack density plays a crucial role in alleviating the stress-induced gate leakage current emanated from the crack traces propagating from the channel into the gate oxide.     

光阳极的前后处理对DSSC性能的影响

为抑制染料敏化太阳能电池(DSSC)光生电子的背反应,分别利用钛酸四丁酯(TBT)和TiCl4制备了两种TiO2溶胶对DSSC光阳极导电玻璃进行前处理,另外,以TBT制备的TiO2溶胶对光阳极TiO2薄膜进行了后处理。在AM1.5和暗环境下分别考察了前后处理对DSSC性能的影响。结果表明,光阳极的前后处理均有效提高了DSSC的光电转换效率,其中以采用TBT制备的TiO2溶胶进行前处理时的效果最佳;DSSC的光电转换效率随后处理次数的增加而增大;后处理3次时,DSSC的光电转换效率达到5.98%。     

Structural and optical properties of AIN sputtering deposited on sapphire substrates with various orientations

AIN thin films were deposited on c-,a-and r-plane sapphire substrates by the magnetron sputtering technique.The in-fluence of high-temperature thermal annealing (HTTA) on the structural,optical properties as well as surface stoichiometry were comprehensively investigated.The significant narrowing of the (0002) diffraction peak to as low as 68 arcsec of AIN after HTTA implies a reduction of tilt component inside the AIN thin films,and consequently much-reduced dislocation densities.This is also supported by the appearance of E2(high) Raman peak and better Al-N stoichiometry after HTTA.Furthermore,the in-creased absorption edge after HTTA suggests a reduction of point defects acting as the absorption centers.It is concluded that HTTA is a universal post-treatment technique in improving the crystalline quality of sputtered AIN regardless of sapphire orienta-tion.     

Photo-Curing 3D Printing of Thermosetting Sacrificial Tooling for Fabricating Fiber-Reinforced Hollow Composites

Carbon fiber-reinforced hollow composites play a vital role in lightweighting modern cars and aircrafts. Fabrication of such hollow composites with seamless internal finish requires sacrificial tooling that can be used under pressure and high temperature. For the very first time, high performance sacrificial tooling that can be used to fabricate fiber-reinforced hollow composites is produced using photocuring 3D printing technology. This is achieved by developing UV-curable resins containing highly soluble yet hydrolysable acetal acrylate cross-linker and hydrophilic 4-acryloylmorpholine monomer. It is found that the cross-linker content greatly affects the printing speed. Further, the widely adopted UV post-curing method is found to have negligible impact on improving the thermal-mechanical properties of printed structures. After thermal post-treatment, printed sacrificial tooling exhibits a heat deflection temperature of 112 °C at 0.455 MPa and an average coefficient of linear thermal expansion of 59 ppm °C⁻¹ between 30 and 100 °C. As a result, printed tooling enables fabrication of carbon fiber-reinforced hollow composites with complex geometry, which shows a tensile strength of 802 MPa and an elastic modulus of 50.2 GPa.     

Characteristics of tetracene-based field-effect transistors on pretreated surfaces

Tetracene-based organic thin-film transistors (OTFTs) were prepared using a neutral cluster beam deposition (NCBD) method. The effect of surface modification with an amphiphilic surfactant, octadecyltrichlorosilane (OTS), on the formation of thin films and the geometric influence of channel length and width on the transistor characteristics were systematically examined. The estimated trap density and temperature-dependence of the field-effect mobility in the range of 10–300 K demonstrated that surfactant pretreatment decreased the total trap density and activation energy for hole-transport by reducing structural disorder in the active layer. In particular, the room-temperature hole mobilities of 0.162 and 0.252 cm²/Vs for untreated and OTS-pretreated devices were among the best to date for polycrystalline tetracene-based transistors using SiO₂ gate dielectric layers without any thermal post-treatment.