非对称大光腔GaAlAs／GaAs激光器及其特性

本文分析了非对称大光腔结构在提高激光器灾变性光学损伤阈值光功率方面的优点；报道了我们研究非对称大光腔ＧａＡｌＡｓ／ＧａＡｓ激光器的初步结果：未涂覆单而输出光功率（ＣＷ）大于８５ｍＷ；阈值电流范围为６０—８０ｍＡ；微分量子效率每面２５％；器件为基横模工作．     

非对称大光腔GaAlAs／GaAs激光器分析与实验

本文分析了非对称大光腔结构在提高ＧａＡｌＡｓ／ＧａＡｓ激光器输出光功率方面的优越性。计算了为获得最大功率和基模工作所应选用的有关参数。在上述分析的基础上，研制了非对称大光腔（Ａ－ＬＯＣ）ＧａＡｌＡｓ／ＧａＡｓ激光器，其未涂覆输出光功率达８５ｍＷ以上，这一结果与理论计算基本符合。     

InGaAs／InP分别限制量子阱激光器的阱数优化设计和实验制备

根据对ＩｎＧａＡｓＰ－ＩｎＰ分别限制量子阱激光器结构的注入效率的分析和利用Ｘ射线衍射结ＩｎＧａＡｓＰ－ＩｎＰ２０个周期的多量子阱结构异质界面的研究，设计，制备了４个阱的ＩｎＧａＡｓＰ－ＩｎＰ分别限制量子阱激光器结构，利用质子轰击制得条形激光器，阈值电流为１００ｍＡ，直流室温连续工作，单面输出外微分子效率为３６％。     

MOCVD生长大功率单量子阱激光器

本文介绍了ＭＯＣＶＤ生长的高质量ＧａＡｓ和ＡｌＡｓ材料以及（Ａｌ）ＧａＡｓ／ＡｌＧａＡｓ分别限制单量于阱激光器．ＧａＡｓ材料的７７Ｋ迁移率为１２２，７００ｃｍ２／（Ｖ·ｓ），ＧａＡｓ／ＡｌＡｓ具有均匀陡变的界面．激光器的最大光输出功率为４Ｗ，平均光功率密度达４ＭＷ／ｃｍ２，斜率效率为１．２Ｗ／Ａ，在１Ｗ恒功老化４０００小时电流增加小于１０％，预计寿命可超过两万小时．     

两次MOVPE生长的大功率InGaAs－GaAs－InGaP掩埋异质结应变量子阱激光器

本文给出了带有Ｉｎ０．４９Ｇａ０．５１ｉ包层的ＩｎＧａＡｓ－ＧａＡｓ应变量子阱激光器实验结果。镀有ＡＲ－ＨＲ膜、并有ｐ－ｎＩｎＧａＰ电流阻挡结的掩埋异质结激光器，在连续波（ＣＷ）和室温（ＲＴ）下，给出３．１ｍＡ的低阈值电流和９５ｍＷ的高功率输出。这是首次以两次ＭＯＶＰＥ方法生长制作的ＩｎＧａＡｓ－ＧａＡｓ－ＩｎＧａＰ掩埋异质结激光器。     

1.3μm波长InGaAsP／InP脊形波导激光器

本文介绍用一次液相外延制备五层结构的晶体材料及自对准的工艺方法研制成功的１．３μｍＩｎＧａＡｓＰ／ＩｎＰ脊形波导（ＲＷＧ）结构的激光器。用有源区向上的装架方式，在２５℃时，激光器最小连续波（ＣＷ）阈值电流为２３ｍＡ，且均匀性较好；最大单面光电转换效率为０．１８ｍＷ／ｍＡ；在６５℃的环境温度下其最大发射功率仍大于１０ｍＷ；用标准单模光纤耦合，２５℃下阈值电流为２０ｍＡ的入纤光功率大于１．５ｍＷ。     

完全 MBE 生长的内含吸收型光栅 GaAlAs／GaAs 多量子阱增益耦合型分布反馈式半导体激光器

我们首次完全采用ＭＢＥ技术成功地制作了内含吸收型光栅的ＧａＡＩＡｓ／ＧａＡｓ量子阶增益耦合型分布反馈式半导体激光器．激光器在室温下的激射波长为８６０ｕｍ，单模单端输出光脉冲峰值功率超过２０ｍＷ．器件在至少０℃到８０℃的范围内始终保持单纵模激射．作为初步结果，条宽为５～６μｍ的氧化物条形结构器件的脉冲工作阈值电流约为７００ｍＡ．     

GaAs／Al_xGa_（1－x）As多量子阱掩埋条形激光器

利用ＭＢＥ生长的ＧａＡｓ／ＡｌｘＧａ１－ｘＡｓ折射率渐变－分别限制－多量子阱材料（ＧＲＩＮ－ＳＣＨ－ＭＱＷ），经液相外延二次掩埋生长，制备了阈值最低达２．５ｍＡ（腔面未镀膜），光功率室温连续输出可达１５ｍＷ／面的半导体激光器．经腔面镀膜后，器件已稳定工作４５００多小时．     

完全MBE生产长的内含吸收型光栅GaAlAs／GaAs多量子阱增益耦合型...

我们首次完全采用ＭＢＥ技术成功地制作了内含吸收型光栅的ＧａＡｌＡｓ／ＧａＡｓ量子阱增益耦合型分布反馈式半导体激光器，激光器在室温下的激射波长为８６０ｎｍ，单模单端输出光脉冲峰值功率超过２０ｍＷ。器件在至少０－８０℃的范围内始终保持单纵模激射，作为初步结果，条宽为５－６μｍ的氧化物条件形结构器件的脉冲工作阈值电流约为７００ｍＡ。     

Ka波段功率PHEMT的设计与研制

报道了Ｋａ 波段功率ＰＨＥＭＴ的设计和研制结果。利用双平面掺杂的ＡｌＧａＡｓ／ＩｎＧａＡｓＰＨＥＭＴ材料,采用０．２ μｍ 的Ｔ型栅及槽型通孔接地技术,研制的功率ＰＨＥＭＴ的初步测试结果为：Ｉｄｓｓ：３６５ ｍ Ａ／ｍ ｍ ;ｇｍ ０：３２０ ｍ Ｓ／ｍ ｍ ;Ｖｐ：－ １．０～－ ２．０ Ｖ。总栅宽为７５０ μｍ 的功率器件在频率为３３ ＧＨｚ时,输出功率大于２８０ ｍ Ｗ,功率密度达到３８０ ｍ Ｗ／ｍ ｍ ,增益大于６ ｄＢ。     

Room-temperature CW operation of GaAs-AlGaAs diode lasers on silicon-on-insulator wafers

GaAs-AlGaAs diode lasers have been fabricated on silicon-on-insulator wafers for the first time. Gain-guided graded-index separate-confinement heterostructure single-quantum-well (GRINSCH-SQW) lasers operated CW at room temperature with threshold current as low as 43 mA, differential quantum efficiency as high as 54%, and output power of more than 60 mW/facet. One device operated CW for 75 min at an output power of 1 mW/facet.<>     

Low-threshold distributed feedback lasers fabricated on material grown completely by LP-MOCVD

GaInAsP-InP distributed feedback (DFB) lasers emitting at 1.57 μm have been fabricated on material grown completely by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The CW threshold current of 60 mA and an output power of 6 mW per facet at room temperature have been obtained. The lasing wavelength λLunder CW operation showed a temperature coefficient (d_{lambdaL}/dT) of 0.9 Å/°C for this DFB laser over the range of10-90degC. A stable single longitudinal mode was maintained under high speed pulse modulation up to 500 ps, and sinusoidal modulation at 1 Ghz.     

A submilliampere-threshold multiquantum-well AlGaAs laser withoutfacet coating using single-step MOCVD

An extremely low threshold current, of 0.88 mA under continuous wave (CW) operation was obtained for a three-quantum-well AlGaAs-GaAs laser without facet coating at room temperature. This laser was fabricated using only single-step metalorganic chemical vapor deposition (MOCVD) on a nonplanar GaAs substrate. The energy conversion efficiency from input electric power to light output power was 42% at 1 mW/facet, which is the highest value for all types of lasers. The laser beam shape was nearly round with an aspect ratio of 0.86     

High-efficiency X-band GaAs IMPATT diodes

Epitaxial GaAs diodes have been fabricated giving 65¹mW CW output power at 10 GHz under room temperature operation. A dc to RF efficiency of 10.1 percent was obtained from a diode operating CW while the measured output of another diode was over 20 mW for 3 mA dc with 70-volt biasing.     

High-power 1.02 mu m InGaAs/AlGaAs strained quantum well lasers with GaInP buried waveguides for pumping Pr/sup 3+/-doped optical fibre amplifier

High power 1.02 mu m single spatial mode laser diodes with low-loss (3.3 cm/sup -1/) GaInP buried waveguides have been developed for pumping Pr/sup 3+/-doped optical fibre amplifiers. A maximum CW light output power of 415 mW and an optical fibre output of 71 mW at 200 mA have been achieved. A preliminary lifetest showed stable operation for over 2300 h under 100 mW CW conditions at 50 degrees C.<>     

Low-threshold InGaAsP/InP 1.3 ?m doubly buried-heterostructure lasers with a reactive-ion-etched facet

The angled reactive-ion-etching (RIE) technique utilising a TiO2 mask and Cl2-Ar gas is successfully applied to facet mirror fabrication of 1.3 ?m InGaAsP/InP doubly buried-heterostructure (DBH) lasers. A typical CW operation threshold current is 22 mA at 25°C, and light output power from one facet exceeds 20 mW. The result of the preliminary aging test is also presented.     

650 nm GalnP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer

650 nm AIGalnP/GalnP laser diodes with compressively strained MQW active layer have been successfully fabricated by means of single epitaxy growth. The threshold current is 6.4 mA,at 40 mA CW operation, the fundamental transverse-mode still remains, and the output power and the slope efficiency can reach 34 mW and 1.1 mW/mA respectively. The dead output power in CW operation can reach 66 mW at a saturation current of 88 mA. During 200 h burn in test,the laser diodes show good stabilization with a degradation of less than 8 %.     

InGaAsP/InP separated multiclad layer stripe geometry lasers emitting at 1.5 ?m

InGaAsP/InP separated multiclad layer stripe geometry lasers emitting at 1.5 ?m are reported. The CW threshold current at 25°C is only 82 mA and the maximum temperature where CW lasing is obtained is 65°C. The characteristic temperature of the pulsed threshold current is 60 K. The transverse mode is fundamental and the longitudinal mode is single up to 1.5 times the threshold under CW operation. A few samples operated for over 1000 h at 50°C under constant optical power operation of 5 mW/facet.     

Single-lobe `Y? coupled laser diode arrays

`Y? Coupled laser arrays have been fabricated with flared waveguides at the output facet to expand the near-field spot and increase the near-field fill factor to greater than 80%. The far-field radiation pattern is predominantly single-lobe, and power outputs of 150mW CW have been obtained with threshold currents as low as 130mA.     

High-power 1.06 mu m GaInAsP DCPBH lasers

High-power 1.06 mu m double channel planar buried-heterostructure (DCPBH) lasers have been fabricated by liquid-phase epitaxy. AT 20 degrees C, the threshold current is 80 mA and CW output powers of 20 mW can be obtained. Under pulsed operation, quantum efficiencies of 0.37 W/A per facet and maximum pulse output powers of 150 mW are realised, while maintaining the lowest-order spatial mode and a symmetrical far-field distribution.<>