Seal Formation in Silicon Planar Patch-Clamp Microstructures

This paper presents a microfabricated planar patch-clamp electrode design and looks at the impact of several physical characteristics on seal formation. The device consists of a patch aperture, 1.5–2.5 $muhbox{m}$ in diameter and 7–12 $muhbox{m}$ in depth, with a reverse-side deep-etched 80- $muhbox{m}$ well. The patch aperture was coated with either thermal oxide or plasma-enhanced chemical vapor deposited (PECVD) $ hbox{SiO}_{2}$. Some of the thermal oxide devices were converted into protruding nozzle structures, and some were boron-doped. Seal formation was tested with cultured N2a neuroblastoma cells. The PECVD oxide devices produced an average seal resistance of 34 $hbox{M}Omega (n = 24)$ , and the thermal oxide devices produced an average seal resistance of 96 $hbox{M}Omega (n = 59)$. Seal resistance was found to positively correlate with patch aperture depth. Whole-cell recordings were obtained from 14% of cells tested with the thermal oxide devices, including a single recording where a gigaohm seal was obtained.$hfill$ [2007-0159]      

Radioisotope Thin-Film Fueled Microfabricated Reciprocating Electromechanical Power Generator

A radioisotope power generator with a potential lifetime of decades is demonstrated by employing a 100.3-year half-lifetime $^{63}hbox{Ni}$ radioisotope thin-film source to electrostatically actuate and cause reciprocation in a microfabricated piezoelectric unimorph cantilever. The radioisotope direct-charged electrostatic actuation of the piezoelectric unimorph cantilever results in the conversion of radiation energy into mechanical energy stored in the strained unimorph cantilever. The gradual accumulation of the actuation charges leads to the pull-in of the unimorph cantilever into the radioisotope thin-film, and the resulting discharge leads to vibrations in the unimorph cantilever. During the vibrations, the stored mechanical energy is converted into electrical energy by the piezoelectric thin-film. The generator was realized by using both microfabricated lead zirconate titanate oxide–silicon (PZT–Si) and aluminum nitride–silicon (AlN–Si) unimorph cantilevers. The radioisotope direct-charged electrostatic actuation of the AlN–Si unimorph cantilevers by a 2.9-mCi $^{63}hbox{Ni}$ thin-film radiating 0.3 $muhbox{W}$ led to charge–discharge–vibrate cycles that resulted in the generation of 0.25% duty cycle 12.95- $muhbox{W}$ power pulses (across an optimal load impedance of 521 $hbox{k}Omega$) at an overall energy conversion efficiency of 3.97%. These electrical power pulses can potentially be useful for periodically sampling sensor microsystems. $hfill$[2008-0009]      

Cryogenic Etching of Silicon: An Alternative Method for Fabrication of Vertical Microcantilever Master Molds

This paper examines the use of deep reactive ion etching of silicon with fluorine high-density plasmas at cryogenic temperatures to produce silicon master molds for vertical microcantilever arrays used for controlling substrate stiffness for culturing living cells. The resultant profiles achieved depend on the rate of deposition and etching of an $hbox{SiO}_{x}hbox{F}_{y}$ polymer, which serves as a passivation layer on the sidewalls of the etched structures in relation to areas that have not been passivated with the polymer. We look at how optimal tuning of two parameters, the $ hbox{O}_{2}$ flow rate and the capacitively coupled plasma power, determine the etch profile. All other pertinent parameters are kept constant. We examine the etch profiles produced using electron-beam resist as the main etch mask, with holes having diameters of 750 nm, 1 $muhbox{m}$ , and 2 $muhbox{m}$. $hfill$[2008-0317]      

Polymeric Thermal Microactuator With Embedded Silicon Skeleton: Part II—Fabrication, Characterization, and Application for 2-DOF Microgripper

This paper presents the fabrication, characterization, and application of a novel silicon-polymer laterally stacked electrothermal microactuator. The actuator consists of a deep silicon skeleton structure with a thin-film aluminum heater on top and filled polymer in the trenches among the vertical silicon parts. The fabrication is based on deep reactive ion etching, aluminum sputtering, SU8 filling, and KOH etching. The actuator is 360 $muhbox{m}$ long, 125 $mu hbox{m}$ wide, and 30 $muhbox{m}$ thick. It generates a large in-plane forward motion up to 9 $muhbox{m}$ at a driving voltage of 2.5 V using low power consumption and low operating temperature. A novel 2-D microgripper based on four such forward actuators is introduced. The microgripper jaws can be moved along both the $x$- and $y$ -axes up to 17 and 11 $muhbox{m}$, respectively. The microgripper can grasp a microobject with a diameter from 6 to 40 $muhbox{m}$ . In addition, the proposed design is suitable for rotation of the clamped object both clockwise and counterclockwise. $hfill$[2007-0192]      

$ {cal L}_{2}$ Gain of Periodic Linear Switched Systems: Fast Switching Behavior

We investigate the $ {cal L}_{2}$ gain of periodic linear switched systems under fast switching. For systems that possess a suitable notion of a time-average system, we characterize the relationship between the ${cal L}_{2}$ gain of the switched system and the ${cal L}_{2}$ gain of its induced time-average system when the switching rate is sufficiently fast. We show that the switched system ${cal L}_{2}$ gain is in general different from the average system ${cal L}_{2}$ gain if the input or output coefficient matrix switches. If only the state coefficient matrix switches, the input-output energy gain for a fixed ${cal L}_{2}$ input signal is bounded by the ${cal L}_{2}$ gain of the average system as the switching rate grows large. Additionally, for a fixed ${cal L}_{2}$ input, the maximum pointwise in time difference between the switched and average system outputs approaches zero as the switching rate grows.      

Tungsten-Based SOI Microhotplates for Smart Gas Sensors

This paper is concerned with the design, fabrication, and characterization of novel high-temperature silicon on insulator (SOI) microhotplates employing tungsten resistive heaters. Tungsten has a high operating temperature and good mechanical strength and is used as an interconnect in high temperature SOI-CMOS processes. These devices have been fabricated using a commercial SOI-CMOS process followed by a deep reactive ion etching (DRIE) back-etch step, offering low cost and circuit integration. In this paper, we report on the design of microhotplates with different diameters (560 and 300 $muhbox{m}$) together with 3-D electrothermal simulation in ANSYS, electrothermal characterization, and analytical analysis. Results show that these devices can operate at high temperatures (600 $^{circ}hbox{C}$ ) well beyond the typical junction temperatures of high temperature SOI ICs (225 $^{circ}hbox{C}$), have ultralow dc power consumption (12 mW at 600 $^{circ}hbox{C}$), fast transient time (as low as 2-ms rise time to 600 $^{circ}hbox{C}$), good thermal stability, and, more importantly, a high reproducibility both within a wafer and from wafer to wafer. We also report initial tests on the long-term stability of the tungsten heaters. We believe that this type of SOI microhotplate could be exploited commercially in fully integrated microcalorimetric or resistive gas sensors. $hfill$[2007-0275]      

A Low-Voltage Large-Displacement Large-Force Inchworm Actuator

Inchworm microactuators are popular in micropositioning applications for their long ranges. However, until now, they could not be considered for applications such as in vivo biomedical applications because of their high input voltages. This paper reports on the modeling, design, fabrication, and testing of a new family of pull-in-based electrostatic inchworm microactuators which provides a solution to this problem. Actuators with only 7-V operating voltage are achieved with a $pm 18hbox{-}muhbox{m}$ total range and a $pm 30hbox{-}muhbox{N}$ output force. Larger operating voltage (16 V) actuators show even better results in force ($pm 110 mu hbox{N}$) and range $(pm 35 muhbox{m})$. The actuator has an in-plane angular deflection conversion which provides a force-displacement tradeoff and allows us to set step sizes varying from few nanometers to few micrometers with a minor change in design. In this paper, we designed 1- and 4-$muhbox{m}$ step-size devices. The actuator step size may change during the operation because of the slipping of the shuttle and the beam bending; however, our model successfully explains the reasons. One of our actuator prototypes has survived more than 25 million cycles without performance deterioration. The device is fabricated using the silicon-on-insulator-based multiuser MEMS process.$hfill$[2007-0146]      

Enhanced 3-D Folding of Silicon Microstructures via Thermal Shrinkage of a Composite Organic/Inorganic Bilayer

Although 3-D out-of-plane structures based on the thermal shrinkage of polyimide-filled V-grooves have already been demonstrated, for large bending angles, this method typically requires several V-grooves and high curing temperatures, which are real-estate consuming and can damage temperature-sensitive components. In this paper, we show that the addition of an inorganic layer (called the boosting layer) beneath the V-grooves can significantly enlarge the bending angle without requiring more V-grooves or higher curing temperatures. For example, a 2- $muhbox{m}$-thick $ hbox{SiO}_{2}$ boosting layer can raise the bending angle of a single V-groove joint by a factor of seven. In addition, the boosting layer removes the requirement for a V-groove and permits the use of straight-wall dry-etched grooves, hence allowing a sharper curvature in a smaller area.$hfill$ [2008-0043]      

A Bubble-Free AC Electrokinetic Micropump Using the Asymmetric Capacitance-Modulated Microelectrode Array for Microfluidic Flow Control

A novel ac electrokinetic micropumping device based on ac electro-osmotic flow induced by asymmetrically capacitance/chemistry-modulated microelectrode arrays has been successfully developed and demonstrated. Asymmetric capacitance modulation is made of comb electrode arrays and parts of individual electrode surfaces are modulated/deposited with a $hbox{SiO}_{2}$ dielectric layer. This proposed design can be utilized to shift the optimal operation frequency of maximum velocity from tens of kilohertz to megahertz to minimize electrolytic bubble generation and enhance micropumping performance. The pumping velocity, described in this paper, is measured via the tracing of microbeads and is a function of applied potential, signal frequency, buffer concentration, and dielectric layer thickness. A maximum pumping velocity up to 290 $muhbox{m} cdot hbox{s}^{-1}$ in 5-mM buffer solution with the applied potential of 10 Vpp is observed in our prototype device, and the estimated maximum flow rate is up to 26.1 $muhbox{l} cdot hbox{h}^{-1}$. This is the first successful demonstration regarding bubble-free ac electrokinetic micropumping via such an asymmetrically capacitance-modulated electrode arrays. Design, simulation, microfabrication, experimental result, and theoretical model are described in this paper to characterize and exhibit the performance of proposed novel bubble-free ac electrokinetic micropump.$hfill$[2008-0030]      

Thin-Film PZT Lateral Actuators With Extended Stroke

Many microelectromechanical system applications require large in-plane actuation forces, with stroke lengths ranging from submicrometer to tens of micrometers in distance. Piezoelectric thin films are capable of generating very large actuation forces, but their motion is not easily directed into lateral displacement in microscale devices. A new piezoelectric thin-film actuator that uses a combination of piezoelectric unimorph beams to generate lateral displacement has been developed. The piezoelectric actuators were fabricated using chemical-solution-derived lead zirconate titanate thin films. These actuators have demonstrated forces greater than 7 mN at displacements of nearly 1 $muhbox{m}$, with maximum stroke lengths at 20 V greater than 5 $muhbox{m}$ in a 500- $muhbox{m}$-long by 100-$mu hbox{m}$-wide actuator. Force and displacement capabilities can be manipulated through simple changes to the actuator design, while actuator nonlinearity can produce dramatic gains in work capacity and stroke length for longer actuators.$hfill$[2007-0298]      

General Transformation for Block Diagonalization of Multitime-Scale Singularly Perturbed Linear Systems

In this technical note, a general transformation for block-diagonalization (decoupling) of multitime-scale singularly perturbed linear systems composed of ${mbi N}$ subsystems is presented. The resulting decoupling corresponds to subsystem time-scales and produces ${mbi N}$ completely independent subsystems operating in different time scales.      

6H-SiC JFETs for 450 $^{circ}hbox{C}$ Differential Sensing Applications

N-channel 6H-SiC depletion-mode junction field-effect transistors (JFETs) have been fabricated, and characterized for use in high-temperature differential sensing. Electrical characteristics of the JFETs have been measured and are in good agreement with predictions of an abrupt-junction long-channel JFET model. The electrical characteristics were measured across a 2-in wafer for temperatures from 25 $^{ circ}hbox{C}$ to 450 $^{circ}hbox{C}$, and the extracted pinchoff voltage has a mean of 11.3 V and a standard deviation of about 1.0 V at room temperature, whereas pinchoff current has a mean of 0.41 mA with standard deviation of about 0.1 mA. The change in pinchoff voltage is minimal across the measured temperature range, whereas pinchoff current at 450 $^{circ}hbox{C}$ is about half its value at room temperature, consistent with the expected change in the $nmu_{n}$ product. The characterization of differential pairs and hybrid amplifiers constructed using these differential pairs is also reported. A three-stage amplifier with passive loads has a differential voltage gain of 50 dB, and a unity-gain frequency of 200 kHz at 450 $^{circ}hbox{C}$, limited by test parasitics. A two-stage amplifier with active loads has reduced sensitivity to off-chip parasitics and exhibits a differential voltage gain of 69 dB with a unity-gain frequency of 1.3 MHz at 450 $^{circ}hbox{C}$.$hfill$[2009-0029]      

Microassembly Fabrication of Tissue Engineering Scaffolds With Customized Design

This paper presents a novel technique to fabricate scaffold/cell constructs for tissue engineering by robotic assembly of microscopic building blocks (of volume 0.5$,times,$0.5$,times,$0.2 ${hbox{mm}}^{3}$ and 60 $mu {hbox{m}}$ thickness). In this way, it becomes possible to build scaffolds with freedom in the design of architecture, surface morphology, and chemistry. Biocompatible microparts with complex 3-D shapes were first designed and mass produced using MEMS techniques. Semi-automatic assembly was then realized using a robotic workstation with four degrees of freedom integrating a dedicated microgripper and two optical microscopes. Coarse movement of the gripper is determined by pattern matching in the microscopes images, while the operator controls fine positioning and accurate insertion of the microparts. Successful microassembly was demonstrated using SU-8 and acrylic resin microparts. Taking advantage of parts distortion and adhesion forces, which dominate at micro-level, the parts cleave together after assembly. In contrast to many current scaffold fabrication techniques, no heat, pressure, electrical effect, or toxic chemical reaction is involved, a critical condition for creating scaffolds with biological agents.      

A Novel Micromachining Process Using DRIE, Thermal Oxidation, Electroplating, and Planarization to Create High Aspect Ratio Coplanar Waveguides

A micromachining process has been developed to create high aspect ratio coplanar waveguides (HARCs). The process creates tall Si mesas using deep reactive-ion etching and converts them into solid $hbox{SiO}_{2}$ mesas using thermal oxidation. Tall Au conductors are deposited using electroplating and planarized using lapping and chemical-mechanical planarization. The solid $hbox{SiO}_{2}$ mesas form the dielectric gap between the tall Au conductors, resulting in HARCs with a planar surface. The tall conductor sidewalls created from the high aspect ratio process reduce the transmission line resistance, which allows the lines to have lower loss at low impedances compared to conventional transmission lines. Transmission lines with characteristic impedances of 16–21 $Omega$ have been fabricated on high-resistivity Si. Transmission line characteristics were measured from 1 to 50 GHz and showed an attenuation of 1.0–1.4 dB/cm at 10 GHz. Measurements were compared to HFSS simulations and showed reasonable agreement over the frequency range. $hfill$[2009-0132]      

A Programmable Array for Contact-Free Manipulation of Floating Droplets on Featureless Substrates by the Modulation of Surface Tension

This paper presents a contactless droplet manipulation system that relies on thermally generated Marangoni flows. Programmable 2-D control of aqueous microdroplets suspended in an oil film on a plain featureless glass substrate is achieved using a 128-pixel heater array suspended 100–500 $mu hbox{m}$ above the oil layer. The heaters generate surface temperature perturbations $(≪ 25 ^{circ}hbox{C})$, resulting in local Marangoni flows that can move droplets in either a push or a pull mode. Programmed movement is achieved by the sequential activation of the heaters, with digital control circuitry and a graphical interface providing addressable control of each heater. Droplets with diameters of 300–1000 $muhbox{m}$ are manipulated and merged at speeds up to 140 $muhbox{m/s}$. Evaporation rates can be reduced by almost two orders of magnitude by using a two-layer-oil medium, and the choice of an optimum carrier fluid can achieve fluid velocities over 17 000 $mu hbox{m/s}$. The system provides a contactless platform for parallel droplet-based assays. As such, it circumvents the challenges of sample contamination and loss that occur when a droplet interacts with a solid surface.$hfill$[2008-0272]      

Evanescent-Wave Spectroscopy Using an SU-8 Waveguide for Rapid Quantitative Detection of Biomolecules

A 30-mm-long multimode waveguide, 40 $muhbox{m}$ wide and 40 $muhbox{m}$ high, is fabricated on a silicon wafer using polymer SU-8 as the core and liquid buffer as the cladding. Antibodies are successfully immobilized on the SU-8 surface designated for binding target antigens dispersed in the buffer solution. Evanescent-wave spectroscopy is performed by exciting the fluorescently labeled antigens, bound to the waveguide surface within its evanescence field, and measuring the emission light intensity. This evanescent-wave biosensor detects specific molecular interaction. The optical output as a function of the antigen concentration can be described by Langmuir equation. Antigen concentration as low as 1.5 $muhbox{g}/hbox{mL}$ is detected; concentrations higher than 100 $muhbox{g}/hbox{mL}$ lead to sensor saturation. $hfill$[2008-0058]      

Discharge-Based Pressure Sensors for High-Temperature Applications Using Three-Dimensional and Planar Microstructures

Two versions of microdischarge-based pressure sensors, which operate by measuring the change, with pressure, in the spatial current distribution of pulsed dc microdischarges, are reported. The inherently high temperatures of the ions and electrons in the microdischarges make these devices amenable to high-temperature operation. The first sensor type uses 3-D arrays of horizontal bulk metal electrodes embedded in quartz substrates with electrode diameters of 1–2 mm and 50–100-$muhbox{m}$ interelectrode spacing. These devices were operated in nitrogen over a range of 10–2000 torr, at temperatures as high as 1000 $^{circ}hbox{C}$. The maximum measured sensitivity was 5420 ppm/torr at the low end of the dynamic range and 500 ppm/torr at the high end, while the temperature coefficient of sensitivity ranged from $-$925 to $-$550 ppm/K. Sensors of the second type use planar electrodes and have active areas as small as 0.13 $hbox{mm}^{2}$. These devices, when tested in a chemical sensing system flowing helium as a carrier gas, had a maximum sensitivity of 9800 ppm/torr, a dynamic range of 25–200 torr, and a temperature coefficient of sensitivity of approximately $-$1412 ppm/K.$hfill$ [2008-0262]      

Indium Phosphide MEMS Cantilever Resonator Sensors Utilizing a Pentacene Absorption Layer

We report a microelectromechanical system cantilever waveguide resonator sensing platform utilizing a novel optical readout scheme and the organic semiconductor pentacene as a surface absorbing layer. In this paper, the measurement of isopropyl alcohol and ethanol vapors by way of mass induced frequency shift using a cantilever microbalance is demonstrated. Vapor was introduced to the system through a custom built environmental chamber. A frequency shift due to a mass absorption of 65 Hz was measured, corresponding to a measurement of $6.92 pm 1.1 times 10^{-14} hbox{g}$ with a minimum detectable mass of $5.09 times 10^{-15} hbox{g}$ for the devices presented. The pentacene absorbing layer in this paper shows it for the first time, functioning as a mass absorbing layer. These results are also the first demonstration of repeatable mass sensing performed using the integrated indium phosphide cantilever waveguide sensor platform.$hfill$ [2008-0134]      

11-Megapixel CMOS-Integrated SiGe Micromirror Arrays for High-End Applications

In this paper, we report on the design, fabrication, packaging, and testing of very reliable CMOS-integrated 10-$hbox{cm}^{2}$ 11-megapixel SiGe-based micromirror arrays on top of planarized six-level metal 0.18-${rm mu}hbox{m}$ CMOS wafers. The array, which is to be used as a spatial light modulator (SLM) for optical maskless lithography, consists of $8 {rm mu}hbox{m} times 8 {rm mu}hbox{m}$ pixels, which can be individually addressed by an analog voltage to enable accurate tilt angle modulation. Due to very stringent requirements on mounted-die flatness ($< hbox{0.01}$ mrad), the first level packaging of SLM die is done using specially designed SiC holders. To avoid trapped particles between the die and holder, which would jeopardize the flatness spec, special backside cleaning of the dies (less than or equal to one 0.8-${rm mu}hbox{m particle/cm}^{2}$ ) is needed before mounting the SLM die on the holder. To enable this backside cleaning and to avoid front-side particles during dicing, handling, and wire bonding, a temporary wafer- or zero-level packaging cap, which can be placed and removed at room temperature, was developed. The dynamic white light interferometer measurements of packaged dies showed that 99.5% of the 123 648 mirrors tested are within the spec. In addition, a stable average cupping of below 7 nm, an rms roughness of below 1 nm, and a stable actuation of over 2.5 teracycles are demonstrated.$hfill$[2009-0169]      

High-Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit/Microfluidic Chip

A hybrid integrated circuit (IC)/microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 $times$ 61 array of pixels that are $30 times 38 mu hbox{m}^{2}$ in size, each of which can be individually addressed with a 50-V peak-to-peak dc-to-10-MHz radio-frequency voltage. These high-voltage pixels produce electric fields above the chip's surface with a magnitude $vert vec{E}vert approx 1 hbox{V}/muhbox{m}$ , resulting in strong dielectrophoresis (DEP) forces $vert vec{F}_{ rm DEP}vert approx 1 hbox{nN}$. Underneath the array of DEP pixels, there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis. The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC/microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications. $hfill$[2009-0142]