Photonic integration using asymmetric twin-waveguide (ATG) technology: part I-concepts and theory

In this first of two papers (hereinafter called Paper I), we present a universal approach for simply realizing monolithic photonic integration based on asymmetric twin-waveguide (ATG) technology. The concepts and important developments leading to ATG integration technology will be reviewed. The ATG structure consists of active and/or passive devices formed in separate, vertically displaced waveguides. Light is transferred between the waveguides via very low loss, lateral, adiabatic tapered mode transformers, allowing different optical functions to be realized in the different waveguides. The design of the adiabatic tapered mode transformer uses an algorithm based on perturbation theory. We show that the same designs can also be deduced from coupled local mode theory. Using the perturbation algorithm to design the taper coupler in an ATG based high bandwidth photodiode, a transfer efficiency of greater than 90% from the fiber waveguide to the coupling waveguide is achieved while the taper length can be reduced by 35% compared to conventional two-section linear taper couplers. The taper design algorithm is further optimized to make the adiabatic taper couplers tolerant to variations in incident light polarization, operation wavelength, and dimensional control during fabrication. Finally, we propose and design a taper that adiabatically couples light from the fundamental mode to the first-order mode. Such a taper coupler is useful in an integrated semiconductor optical amplifier/p-i-n detector circuit.     

Intimate monolithic integration of chip-scale photonic circuits

In this paper, we introduce a robust monolithic integration technique for fabricating photonic integrated circuits comprising optoelectronic devices (e.g., surface-illuminated photodetectors, waveguide quantum-well modulators, etc.) that are made of completely separate epitaxial structures and possibly reside at different locations across the wafer as necessary. Our technique is based on the combination of multiple crystal growth steps, judicious placement of epitaxial etch-stop layers, a carefully designed etch sequence, and self-planarization and passivation steps to compactly integrate optoelectronic devices. This multigrowth integration technique is broadly applicable to most III-V materials and can be exploited to fabricate sophisticated, highly integrated, multifunctional photonic integrated circuits on a single substrate. As a successful demonstration of this technique, we describe integrated photonic switches that consume only a 300 /spl times/300 /spl mu/m footprint and incorporate InGaAs photodetector mesas and InGaAsP/InP quantum-well modulator waveguides separated by 50 /spl mu/m on an InP substrate. These switches perform electrically-reconfigurable optically-controlled wavelength conversion at multi-Gb/s data rates over the entire center telecommunication wavelength band.     

3-D photonic circuit technology

Vertically coupled, wafer-bonded III-V semiconductor waveguide devices provide a means to obtain more powerful, compact photonic integrated circuits and allow for the combination of different materials onto a single chip. Various switching, filtering, multiplexing, and beam splitting devices in the InP-InGaAsP and GaAs-AlGaAs systems for signals in the 1550-nm range have been realized. An investigation of optimal optical add-drop multiplexer waveguide layout shapes has been performed through integration of the coupled-mode Riccati equation, providing potential sidelobe levels of less than -32 dB and filter bandwidths over 20% narrower than those of previous devices. Effects of nonideal processing conditions on filter performance are analyzed as well.     

High-sensitivity cytometric detection using fluidic-photonic integrated circuits with array waveguides

We demonstrate a new detection scheme for a microfabricated flow cytometer. The fluidic-photonic integrated circuits (FPICs) that perform flow cytometric detection possess new functionality, such as on-chip excitation, time-of-flight measurement, and above all, greatly enhanced fluorescence detection sensitivity. Using the architecture of space-division waveguide demultiplexer and the technique of cross-correlation analysis, we obtained high detection sensitivity with a simple light source and a detector, without high-power laser excitation and lock-in amplifier (or photomultiplier tube) detection. Besides improving cytometric detection, the technology of integrating microfluidic circuits with photonic circuits into the FPIC presents a new platform for sophisticated biomedical-sensing devices with significant cost, size, and performance advantages.     

Monolithic integration via a universal damage enhanced quantum-wellintermixing technique

A novel technique for quantum-well intermixing is demonstrated, which has proven a reliable means for obtaining postgrowth shifts in the band edge of a wide range of III-V material systems. The technique relies upon the generation of point defects via plasma induced damage during the deposition of sputtered SiO₂, and provides a simple and reliable process for the fabrication of both wavelength tuned lasers and monolithically integrated devices. Wavelength tuned broad area oxide stripe lasers are demonstrated in InGaAs-InAlGaAs, InGaAs-InGaAsP, and GaInP-AlGaInP quantum well systems, and it is shown that low absorption losses are obtained after intermixing. Oxide stripe lasers with integrated slab waveguides have also enabled the production of a narrow single lobed far field (3°) pattern in both InGaAs-InAlGaAs, and GaInP-AlGaInP devices. Extended cavity ridge waveguide lasers operating at 1.5 μm are demonstrated with low loss (α=4.1 cm^-1) waveguides, and it is shown that this loss is limited only by free carrier absorption in waveguide cladding layers. In addition, the operation of intermixed multimode interference couplers is demonstrated, where four GaAs-AlGaAs laser amplifiers are monolithically integrated to produce high output powers of 180 mW in a single fundamental mode. The results illustrate that the technique can routinely be used to fabricate low-loss optical interconnects and offers a very promising route toward photonic integration     

Monolithically integrated active components: a quantum-well intermixing approach

As the demand for bandwidth increases, the communications industry is faced with a paradigm shift. Photonic integration is a key technology that will facilitate this shift. Monolithic integration allows for the realization of highly functional optical components, called photonic integrated circuits. Herein, we discuss the advantages and potential applications of photonic integration, and after a brief overview of various integration techniques, provide a detailed look at our work using a novel quantum well intermixing processing platform.     

Analysis of Hybrid Dielectric Plasmonic Waveguides

Future ultracompact photonic integrated circuits (PICs) will rely on high-index-contrast dielectric materials, which permit a strong confinement of the optical field in the diffraction limit as well as low propagation losses. This is the case of PICs implemented on a silicon-on-insulator (SOI) platform. To achieve confinement beyond the diffraction limit, plasmonic waveguides (based on metal–dielectric interfaces) have been recently proposed. This new kind of waveguide provides a strong enhancement of the field in the metal–dielectric interface, which is of paramount importance for nonlinear functionalities or sensing. Plasmonic waveguides can also be built on SOI wafers. Thus, it can be reasonably thought that high index contrast as well as plasmonic waveguides can coexist in future ultradense PICs. In this paper, a theoretical and numerical study on the performance of several dielectric and plasmonic waveguides is presented. Thanks to their plasmon-coupled supported modes, ultracompact devices as hybrid ring resonators can be devised and integrated with silicon photonic circuits.      

CWDM Transmitter Module Based on Hybrid Integration

A simple concept for hybrid integration and packaging of III/V active devices in a multipurpose optical platform is introduced. The board could be used as a coarse wavelength-division multiplexing transmitter with four lasers or as a receiver with photodiodes, respectively. The assembly ensures ample heat dissipation, so the laser performance does not suffer after the packaging.     

Optical modeling of waveguide photonic nanostructures using theradiation spectrum method (RSM) with evanescent modes

In this work, we study the effects of the evanescent modes in the simulation and modeling of optical integrated circuits based on photonic bandgap structures. We show that the contribution of these modes in the energy transfer in structures like the MOEM structures, can not be neglected. The radiation spectrum method, recently developed by the authors for the guided wave devices, is thus extended to account for the evanescent mode propagation. Applying this technique on an air-gap in a suspended waveguide a model of this gap is developed in terms of its parameters. This model is then integrated in an all optical simulator to predict the performance of photonic structures. Such technique enables to design and to optimize the photonic integrated circuits taking the evanescent modes effects into account     

Analysis of polarization plane rotation characteristic in 2D photonic crystal waveguide with chiral medium by condensed node spatial network

Using the photonic band gap in photonic crystals, the fundamental waveguide structures for the light wavelength range have been developed. Based on the fine structure of these many functional devices have been proposed by analytical or numerical simulation methods and the experiments of trial manufacture. In this paper, the treatment of chiral dielectric in the Condensed Node Spatial Network for the vector potential is explained, and we show the polarization plane rotation property in air‐hole and pillar type photonic crystal waveguide structures with the chiral medium substrate. Then, we show the fundamental advantage of the air‐hole type photonic crystal waveguide structure in application to a mode converter. © 2005 Wiley Periodicals, Inc. Electr Eng Jpn, 152(1): 7–14, 2005; Published online in Wiley InterScience ( www.interscience. wiley.com ). DOI 10.1002/eej.20098     

High-power laser diodes with dry-etched mirror facets andintegrated monitor photodiodes

High-power broad-area InGaAs-AlGaAs-GaAs single-quantum-well separate-confinement heterostructure (SQW-GRINSCH) lasers with dry-etched mirror facets and integrated monitor photodiodes have been investigated. A multilayer resist system has been employed as a mask for the chemically assisted ion-beam etching (CAIBE) process resulting in vertical and smooth laser facets. Thick electroplated gold layers on top of the ohmic contacts improve the heatsinking of the lasers leading to reasonable continuous-wave (CW) output powers even when the devices are mounted junction-side up. Monolithically integrated monitor photodiodes provide a linear response to the optical output powers of the laser diodes. The properties of broad-area lasers with dry-etched and cleaved facets are almost identical, Record values for the CW output powers of 2.59 W per uncoated facet and wall-plug efficiencies of more than 55% have been achieved with junction-side-down mounted devices     

A quantum-well-intermixing process for wavelength-agile photonic integrated circuits

Wavelength-agile photonic integrated circuits are fabricated using a one-step ion implantation quantum-well intermixing process. In this paper, we discuss, the issues in processing optimized widely tunable multisection lasers using this technique and present the results achieved using this process. This quantum-well intermixing process is general in its application and can be used to monolithically integrate a wide variety of optoelectronic components with widely tunable lasers.     

Plasma-induced quantum well intermixing for monolithic photonic integration

Plasma-induced quantum well intermixing (QWI) has been developed for tuning the bandgap of III-V compound semiconductor materials using an inductively coupled plasma system at the postgrowth level. In this paper, we present the capability of the technique for a high-density photonic integration process, which offers three aspects of investigation: 1) universality to a wide range of III-V compound material systems covering the wavelength range from 700 to 1600 nm; 2) spatial resolution of the process; and 3) single-step multiple bandgap creation. To verify the monolithic integration capability, a simple photonic integrated chip has been fabricated using Ar plasma-induced QWI in the form of a two-section extended cavity laser diode, where an active laser is integrated with an intermixed low-loss waveguide.     

Focused ion-beam implantation induced thermal quantum-wellintermixing for monolithic optoelectronic device integration

By focused ion beam implantation induced thermal intermixing the bandgap of quantum-well layer structures can be selectively changed. This allows lateral bandgap engineering and gives a new degree of freedom for lateral structuring. The principle technological aspects like the dependence of the bandgap shift on implantation parameters and the spatial resolution are investigated and applied to the fabrication of photonic and optoelectronic devices. Lateral waveguiding in InP-based materials, the possibility of monolithic integration of bandgap shifted waveguide areas into active devices and the improvement of the lateral carrier confinement in ridge waveguide lasers are demonstrated. Due to the high spatial resolution, modulated bandgap gratings could be realized with periods down to 90 mn. These bandgap gratings were used to create gain-coupled distributed-feedback lasers in different material systems with well controlled single-mode emission     

Hybrid integration of smart pixels by using polyimide bonding:demonstration of a GaAs p-i-n photodiode/CMOS receiver

The fabrication procedure of smart pixels based on a hybrid integration of compound semiconductor photonic devices with silicon CMOS circuits is described. According to the 0.8-μm design rule, CMOS receiver/transmitter circuits are designed for use in vertical-cavity surface-emitting laser (VCSEL)-based smart pixels, and 16×16 and 2×2 Banyan-switch smart-pixel chips are also designed. By using our polyimide bonding technique, we integrated GaAs pin-photodiodes hybridly on the CMOS circuits. The photodetector (PD)/CMOS hybrid receiver operated error free at up to 800 Mb/s. Successful optical/optical (O/O) operation (a bit rate up to 311 Mbit/s) of the 2×2 Banyan-switch smart-pixel chip implemented with another VCSEL chip is also demonstrated     

High-performance solar-blind photodetectors based on Al/sub x/Ga/sub 1-x/N heterostructures

Design, fabrication, and characterization of high-performance Al/sub x/Ga/sub 1-x/N-based photodetectors for solar-blind applications are reported. Al/sub x/Ga/sub 1-x/N heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal (MSM) photodiodes. The solar-blind photodiode samples were fabricated using a microwave compatible fabrication process. The resulting devices exhibited extremely low dark currents. Below 3fA, leakage currents at 6-V reverse bias were measured on p-i-n samples. The excellent current-voltage (I--V) characteristics led to a detectivity performance of 4.9/spl times/10/sup 14/ cmHz/sup 1/2/W/sup -1/. The MSM devices exhibited photoconductive gain, while Schottky and p-i-n samples displayed 0.09 and 0.11 A/W peak responsivity values at 267 and 261 nm, respectively. A visible rejection of 2/spl times/10/sup 4/ was achieved with Schottky samples. High-speed measurements at 267 nm resulted in fast pulse responses with greater than gigahertz bandwidths. The fastest devices were MSM photodiodes with a maximum 3-dB bandwidth of 5.4 GHz.     

CW and mode-locked integrated extended cavity lasers fabricatedusing impurity free vacancy disordering

A phosphorus-doped silica (P:SiO₂) cap containing 5 wt% P has been demonstrated to inhibit the bandgap shifts of p-i-n and n-i-p GaAs-AlGaAs quantum-well laser structures during rapid thermal processing. Bandgap shift differences as large as 100 meV have been observed between samples capped with SiO₂ and with P:SiO₂. The technique has been used to fabricate GaAs-AlGaAs ridge lasers with integrated transparent waveguides. With a selective differential blue-shift of 30 nm in the absorption edge, devices with 400 μm/2.73-mm-long active/passive sections exhibited an average threshold current of 9 mA in continuous-wave (CW) operation, only 2.2 mA higher than that of discrete lasers of the same active length and from the same chip. Extended cavity mode-locked lasers were also investigated and compared to all active devices. For the extended cavity device, the threshold current is a factor of 3-5 lower, the pulsewidth is reduced from 10.3 to 3.5 ps and there is a decrease in the free-running jitter level from 15 ps (measurement bandwidth 10 kHz-10 MHz) to 6 ps. In addition, the extended cavity lasers do not exhibit any self-pulsing modulation of the mode-locked pulse train, unlike the all-active lasers, and the optical spectra indicate that the pulses are more linearly chirped     

Raman-based silicon photonics

This paper reviews recent progress in a new branch of silicon photonics that exploits Raman scattering as a practical and elegant approach for realizing active photonic devices in pure silicon. The large Raman gain in the material, enhanced by the tight optical confinement in Si/SiO2 heterostructures, has enabled the demonstration of the first optical amplifiers and lasers in silicon. Wavelength conversion, between the technologically important wavelength bands of 1300 and 1500 nm, has also been demonstrated through Raman four wave mixing. Since carrier generation through two photon absorption is omnipresent in semiconductors, carrier lifetime is the single most important parameter affecting the performance of silicon Raman devices. A desired reduction in lifetime is attained by reducing the lateral dimensions of the optical waveguide, and by actively removing the carriers with a reverse biased diode. An integrated diode also offers the ability to electrically modulate the optical gain, a unique property not available in fiber Raman devices. Germanium-silicon alloys and superlattices offer the possibility of engineering the otherwise rigid spectrum of Raman in silicon.     

Nonlinear Silicon Photonics: Analytical Tools

Since the recent demonstration of chip-scale, silicon-based, photonic devices, silicon photonics provides a viable and promising platform for modern nonlinear optics. The development and improvement of such devices are helped considerably by theoretical predictions based on the solution of the underlying nonlinear propagation equations. In this paper, we review the approximate analytical tools that have been developed for analyzing active and passive silicon waveguides. These analytical tools provide the much needed physical insight that is often lost during numerical simulations. Our starting point is the coupled-amplitude equations that govern the nonlinear dynamics of two optical waves interacting inside a silicon-on-insulator waveguide. In their most general form, these equations take into account not only linear losses, dispersion, and the free-carrier and Raman effects, but also allow for the tapering of the waveguide. Employing approximations based on physical insights, we simplify the equations in a number of situations of practical interest and outline techniques that can be used to examine the influence of intricate nonlinear phenomena as light propagates through a silicon waveguide. In particular, propagation of single pulse through a waveguide of constant cross section is described with a perturbation approach. The process of Raman amplification is analyzed using both purely analytical and semianalytical methods. The former avoids the undepleted-pump approximation and provides approximate expressions that can be used to discuss intensity noise transfer from the pump to the signal in silicon Raman amplifiers. The latter utilizes a variational formalism that leads to a system of nonlinear equations that governs the evolution of signal parameters under the continuous-wave pumping. It can also be used to find an optimum tapering profile of a silicon Raman amplifier that provides the highest net gain for a given pump power.      

Progress in InGaAs-GaAs selective-area MOCVD toward photonicintegrated circuits

The progress toward integrated photonic devices by selective-area metalorganic chemical vapor deposition (MOCVD) is reviewed. Processing steps involved with fabricating buried heterostructures (BHs) by a three-step technique are outlined, and a computational model is presented that predicts the enhancement behavior of selective-area MOCVD. Results are reviewed for several discrete and integrated photonic devices. These include low-threshold BH lasers, laser diodes integrated with either intracavity or external cavity modulators, dual-channel emitters integrated with both modulators and passive y-junction waveguides, and broad-band light-emitting diodes (LEDs)