RTD/UTC-PD高速光控MOBILE

单向运动载流子光二极管(UTC-PD)具有高速和大电流的特点,与RTD相结合可构成一高速光控MOBILE,能够应用于80Gb/s的光纤通信、光信息处理和高速光网络中。在详细介绍UTC-PD的基础上,讨论了RTD/UTC-PD光控MOBILE的工作原理、材料结构和制作工艺、电路性能测量等,并进一步将上述结果推广到交流信号情况下RTD/UTC-PD光控MOBILE的瞬态特性。结果表明,存在三个因素影响该单元电路的工作速度,即交流电流效应、开关延迟时间和UTC-PD器件的带宽。     

由RTD构成的MOBILE单元电路研究

对由共振隧穿二极管(RTD)构成的单双稳态转换逻辑单元(MOBILE)电路进行了详细地研究与分析,并结合实际RTD的特性用PSPICE进行了MOBILE单元电路模拟,总结和验证了MOBILE单元电路变化的三条规律,为进一步研究由RTD构成的多种复杂数字电路奠定了基础。     

共振隧穿器件应用电路概述——共振隧穿器件讲座(2)

在“共振隧穿器件概述”的基础上,对共振隧穿器件应用电路作了全面概括的介绍。首先对共振隧穿器件应用电路的特点、分类和发展趋势作了简述;进一步对由RTDH/EMT构成的单-双稳转换逻辑单元(MOBILE)和以它为基础构成的RTD应用电路,包括柔性逻辑、静态随机存储(SRAM)、神经元、静态分频器等电路的结构、工作原理和逻辑功能等进行了介绍。关于RTD/HEMT构成的更为复杂的电路,如多值逻辑、AD转换器以及RTD光电集成电路等将在本讲座最后部分进行讲解。     

光控单稳-双稳转换逻辑单元

用光电晶体管替换HEMT作为输入端,结合RTD可以构成新的光控逻辑单元,它具有光电流开关和自锁功能,该功能在实验及电路模拟中得到证实.在此基础上,若以异质结光电管(HPT)和RTD集成,可以设计和制作诸如D型触发器等不同功能的光控逻辑电路单元.     

光控单稳-双稳转换逻辑单元

用光电晶体管替换HEMT作为输入端,结合RTD可以构成新的光控逻辑单元,它具有光电流开关和自锁功能,该功能在实验及电路模拟中得到证实.在此基础上,若以异质结光电管(HPT)和RTD集成,可以设计和制作诸如D型触发器等不同功能的光控逻辑电路单元.     

光控单稳-双稳转换逻辑单元(英文)

用光电晶体管替换HEMT作为输入端,结合RTD可以构成新的光控逻辑单元,它具有光电流开关和自锁功能,该功能在实验及电路模拟中得到证实.在此基础上,若以异质结光电管(HPT)和RTD集成,可以设计和制作诸如D型触发器等不同功能的光控逻辑电路单元.     

一种基于RTD和HEMT的单片集成逻辑电路

介绍了一种基于共振隧穿二极管(RTD)和高电子迁移率晶体管(HEMT)的单片集成电路.采用分子束外延技术在GaAs底层上重叠生长了RTD和HEMT结构.RTD室温下的峰谷电流比为5.2∶1,峰值电流密度为22.5kA/cm2.HEMT采用1μm栅长,阈值电压为-1V.设计电路称为单稳态-双稳态转换逻辑单元(MOBILE).实验结果显示了该电路逻辑运行成功,运行频率可达2GHz以上.     

一种基于RTD和HEMT的单片集成逻辑电路

介绍了一种基于共振隧穿二极管(RTD)和高电子迁移率晶体管(HEMT)的单片集成电路.采用分子束外延技术在GaAs底层上重叠生长了RTD和HEMT结构.RTD室温下的峰谷电流比为5.2∶1,峰值电流密度为22.5kA/cm2.HEMT采用1μm栅长,阈值电压为-1V.设计电路称为单稳态-双稳态转换逻辑单元(MOBILE).实验结果显示了该电路逻辑运行成功,运行频率可达2GHz以上.     

NDRHBT及其构成的单-双稳转换逻辑单元

设计并研制了InGaP/GaAs/InGaP超薄基区(8nm)负阻异质结晶体管(UTBNDRHBT)。并用它构成一个单-双稳转换逻辑单元(Monostable-bistable transition logic element,简称MOBILE)。经过测试,证实其具有与GRTD、RTD/HEMT构成的MOBILE相类似的逻辑功能。     

基于RTD的新型全加器设计

单双稳态转换逻辑单元(MOBILE)是基于共振隧穿二极管(RTD)电路的一个重要逻辑单元,非常适合阈值逻辑电路设计。由MOBILE可以构成阈值逻辑门(TG)和广义阈值逻辑门(GTG)等阈值逻辑电路。本文通过将三变量异或函数转化为较简单、理想的GTG输入输出函数形式,设计了由GTG构成的新型三变量异或门,并利用该三变量异或门设计了新型的全加器。通过HSPICE仿真和性能比较,该全加器不仅器件数量少,输出延时短,而且能达到较高的工作频率、更小的电路功耗与功耗-延迟积。     

遏止(Quenching)及其在分析RTD逻辑电路中的应用

在深入分析共振隧穿二极管(RTD)开关前后内阻变化和RTD串联组合中不同RTD电压分布随总偏压变化的基础上,深化了“遏止(Q uench ing)”的概念。并进一步以此概念说明了RTD/HEM T电路中,单-双稳转换逻辑单元(M OB ILE)、多值逻辑(M VL)文字(L itera l)逻辑门、三态反相器(T ernary inverter)等逻辑单元的工作原理。通过此种分析,证实了“遏止”概念是解释和分析复杂RTD电路原理的强有力工具。以上论证也适用于由其它负阻器件构成的逻辑电路。     

Monolithic integration of resonant tunneling diodes and FET's formonostable-bistable transition logic elements (MOBILE's)

A MOBILE (monostable-bistable transition logic element), employing two n-type negative differential resistance devices connected in series, is a functional logic gate with the advantages of multiple inputs and multiple functions. In this paper, a novel approach to achieve MOBILE operation is demonstrated using monolithic integration of resonant tunneling diodes (RTD) and FETs. In our new integration structure, an RTD and FET are connected in parallel. This structure offers several advantages including separate optimization of RTD's and FET's, and flexible circuit design abilities. For a single-input MOBILE gate, inverter operation at room temperature is demonstrated as the evidence of monostable-to-bistable transition     

Low-power static frequency divider using an InP-based monolithic RTD/HBT technology

A low-power static frequency divider using an RTD/HBT MOnostable-BIstable transition Logic Element (MOBILE) scheme is proposed for the first time and operation of the circuit is demonstrated up to 20 GHz. The divided-by-two static frequency divider has been successfully implemented in an InP-based monolithic RTD/HBT IC technology. The number of devices used in the static frequency divider has been significantly reduced by using the proposed MOBILE scheme. The fabricated frequency divider operates at a clock frequency up to 20 GHz and dissipates d.c. power of 51 mW at a power supply of 3.3 V     

Logic circuit design using monostable-bistable transition logic element based on standard BiCMOS process

We present a monostable-bistable transition logic element (MOBILE) based on the negative-differential-resistance (NDR) circuit. In particular, this circuit can be completely implemented using the standard BiCMOS process. A traditional MOBILE using two resonant tunneling diodes (RTD) connected in series is a functional logic circuit. The fabrication of RTD is utilized in the complicated molecular-beam-epitaxy (MBE) system. However, we present a MOBILE circuit that is completely made of standard Si-based metal-oxide-semiconductor field effect transistors and SiGe-based heterojunction bipolar transistors. By suitably determining the control voltages and input conditions, we can obtain the operation of the inverter, AND and OR logic gates. We also demonstrate the latch characteristic of this MOBILE circuit. This logic circuit is fabricated using the standard 0.35 μm BiCMOS process without the need for the MBE system.     

Novel pipeline architectures based on Negative Differential Resistance devices

Devices exhibiting Negative Differential Resistance (NDR) in their I–V characteristic are attractive from the design point of view and circuits exploiting it have been reported showing advantages in terms of performance and/or cost. In particular, logic circuits based on the monostable to bistable operating principle can be built from the operation of two series connected NDR devices with a clocked bias. Monostable to Bistable Logic Element (MOBILE) gates allow compact implementation of complex logic function like threshold gates and are very suitable for the implementation of latch-free fine grained pipelines. This pipelining relies on the self-latching feature of MOBILE operation. Conventionally, MOBILE gates are operated in a gate level pipelined fashion using a four-phase overlapped clock scheme. However other simpler, and higher through-output interconnection schemes are possible. This paper describes latch-free MOBILE pipeline architectures with a single clock and with a two phase clock scheme which strongly rely on distinctive characteristics of the MOBILE operating principle. Both the proposed architectures are analyzed and experimentally validated. The fabricated circuits use a well-known transistor NDR circuit (MOS-NDR) and an efficient MOBILE gate topology built on its basis. Both solutions are compared and their distinctive characteristics with respect to domino based solutions are pointed out.