Dielectric properties of chemically vapour-deposited Si3N4

The dielectric properties of chemically vapour-deposited (CVD) amorphous and crystalline Si₃N₄ were measured in the temperature range from room temperature to 800° C. The a.c. conductivity ( _a.c.) of the amorphous CVD-Si₃N₄ was found to be less than that of the crystalline CVD-Si₃N₄ below 500° C, but became greater than that of the crystalline CVD-Si₃N₄ over 500° C due to the contribution of d.c. conductivity ( _d.c.). The measured loss factor () and dielectric constant () of the amorphous CVD-Si₃N₄ are smaller than those of the crystalline CVD-Si₃N₄ in all of the temperature and frequency ranges examined. The relationships of ^n-1, (- ) ^n-1 and/(- ) = cot (n/2) (were observed for the amorphous and crystalline specimens, where is angular frequency andn is a constant. The values ofn of amorphous and crystalline CVD-Si₃N₄ were 0.8 to 0.9 and 0.6 to 0.8, respectively. These results may indicate that the a.c. conduction observed for both of the above specimens is caused by hopping carriers. The values of loss tangent (tan) increased with increasing temperature. The relationship of log (tan) T was observed. The value of tan for the amorphous CVD-Si₃N₄ was smaller than that of the crystalline CVD-Si₃N₄.     

A study of the Bailey-Orowan equation of creep

A new method was developed to study the Bailey-Orowan equation of creep, _c=r/h, where _c is the creep rate,r is the recovery rate andh is the work-hardening coefficient. The method was to vary the strain rate,, around the creep rate, _c, and to measure the corresponding stress rate,. In a plot of stress rate against strain rate, a straight line was obtained. The slope of the straight line was equal toh, and the intersection of the straight line with the stress axis was equal to –r, as in the equation=–r+h. The creep test under a constant stress is a special case of this equation when the stress rate,, is zero. The above measurement was carried out within a very small stress variation, less than 1% of the total stress, so that the values ofr andh were not disturbed. The creep test was performed on Type 316 stainless steel. The creep rate was shown to be equal to the ratior/h, but the value ofh was approximately equal to Young's modulus at the testing temperature, rather than, as is commonly believed, to the work-hardening coefficient.     

Notch tip stress distribution in strain hardening materials

Using the results of elastic-plastic stress analyses for notched bars, it is shown that a modified form of slip-line field solution can satisfactorily explain the variation of longitudinal stress ahead of notch tips in strain hardening materials.

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Résumé En utilisant les résultats d'analyses de contrainte élastoplastique dans le cas de barres entaillées, on montre qu'il est possible d'utiliser une forme simplifiée de solution du champ des lignes de glissement pour expliquer de façon satisfaisante la variation des contraintes longitudinales en avant d'extrémités d'entaille dans des matériaux susceptibles d'un écrouissage.

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Nomenclature _yy longitudinal tensile stress in the notch tip plastic zone - _xx transverse stress in the x-direction - _zz transverse stress in the z-direction - k yield stress in shear - ₀ yield stress in tension - ₀ ^* strain hardened yield stress (flow stress) - _{0/* c} flow stress at notch tip - _total total strain _pl plastic strain _l principal strain - _{1 c} maximum principal strain at notch tip - _1pl plastic strain in they-direction - _{1 cp1} E_{1 pl} at notch tip - _eff effective plastic strain - _{c eff eff} at notch tip - ₀ yield strainC Stress decay constant in the notch tip region - /e_pl linear strain hardening rate - n strain hardening exponent in power hardening law - 2 flank angle of notch - distance from notch tip - p notch tip radius - k _I applied stress intensity for Mode I loading - E Young's modulus - V _c crack tip opening displacement     

The Accuracy of Dielectric Measurements in a Cylindrical Cavity H01p Resonator

The error of measurements of the dielectric parameters and tan in a cylindrical cavity resonator supporting the H _01p mode by varying the length of the resonator at a constant resonance frequency is considered. The errors in measuring and tanare investigated numerically as a function of the electric thickness of the sample being investigated and its permittivity .     

A Method for Calculating Thermal Radiation Properties of Multilayer Films from Optical Constants

A calculation method for the incident angle dependence of the solar absorptance _S and the temperature dependence of the total hemispherical emittance _H of multilayer films is proposed. The method is based on calculation of _S and _H from optical constants in the wavelength region from 0.25 to 100 m for thin polymer films and deposited metal. In this paper we provide values of _S in the incident angle region from 0 to 90° and _H in the temperature range from 173.15 to 373.15 K for two-layer samples of aluminum-deposited polyimide film. The results obtained for _S and _H by the present method are compared with experimental results measured by both spectroscopic and calorimetric methods. The calculated results of _S and _H agree well with the experimental results.     

Dielectric properties of chemically treated wood

Dielectric properties along the grain for absolutely dried untreated and seven kinds of chemically treated Sitka spruce (Picea sitchensis Carr.) woods were measured. Cole-Cole's circular arc law was applied to the results of the relaxation due to the motions of methylol groups. The following changes were caused by chemical treatments. In polyethylene glycol (PEG) impregnation, the distribution of relaxation times became very narrow, the generalized relaxation time (_m) was considerably decreased, and the relaxation magnitude (₀ – ) was slightly increased. In acetylation, the distribution of relaxation times became very broad, _m was considerably increased, and (₀ – ) was remarkably decreased. In propylene oxide treatment, the distribution of relaxation times became slightly narrow and _m was decreased. _m was slightly decreased in formalization, phenol-formaldehyde (PF) resin treatment and wood methyl methacrylate (MMA) composite. (₀ – ) was decreased in formalization and PF-resin treatment and was hardly changed in wood-MMA composite and heat treatment. The distribution of relaxation times was almost unchanged in formalization, PF-resin treatment, wood-MMA composite and heat treatment.     

The role of ε-martensite in the impact toughness of an Fe-17Mn alloy

The influence of -martensite on the cryogenic toughness of an Fe-17 wt% Mn alloy was studied in this work. Alloys were tempered at various temperatures in order to systematically increase the volume fraction of -martensite. This was followed by Charpy impact testing conducted at room temperature and at–196°C. The experimental results indicated that although room-temperature toughness was not influenced by the -martensite content, the cryogenic toughness was strongly dependent on the volume fraction of -martensite. In particular, with the exception of the alloys tempered at 400 and 450°C, the impact toughness consistently increased with -martensite content. Microstructural and fractographic evaluations using SEM and TEM suggested that the toughness improvements were attributed to the stress-induced martensite transformation. No microstructural evidence was found which could be ascribed to an effect of -martensite on the low-temperature embrittlement exhibited by Fe-Mn alloys tempered at 400–450°C.     

The dielectric behaviour of single-crystal MgO,Fe/MgO and Cr/MgO

The dielectric constants and loss factors,, for pure single-crystal MgO and for Fe-and Cr-doped crystals have been measured at frequencies, , from 500 Hz to 500 kHz at room temperature. For pure MgO at 1 kHz the values of and the loss tangent, tan , (9.62 and 2.16×10^–3, respectively) agree well with the data of Von Hippel; the conductivity, , varies as ⁿ withn=0.98±0.02. In Fe-doped crystals increases with Fe-concentration (at any given frequency); for a crystal doped with 12800 ppm Fe, was about four times the value for pure MgO. At all concentrations the variation of log with log was linear andn=0.98±0.02. A decrease in with increasing Fe-concentration was also observed. A similar, although less pronounced, behaviour was found in Cr-doped crystals. The effects are discussed in terms of hopping mechanisms.     

Study of the paramagnetic-antiferromagnetic transition and the γ → ε martensitic transformation in Fe-Mn alloys

The paramagnetic-antiferromagnetic transition and the martensitic transformation of Fe-Mn (Mn 15–32 wt%) alloys have been investigated by resistivity, dilatometry and X-ray diffraction (XRD). The results show that paramagnetic-antiferromagnetic transition increases the resistivity and the volume of alloys, whereas the martensitic transformation reduces the resistivity and volume of alloys. The A _f that was determined by the dilatometric method is not the temperature that martensites in the Fe-Mn alloys have reverse transformed to austenites completely. Mn additions reduce M _s, increase T _N and the lattice parameter of austenite in the Fe-Mn alloys. Both the antiferromagnetic transition and the martensitic transformation lead to an increase in the lattice parameter of austenite. The lattice parameters both above T _N and below T _N decrease linearly with temperature. The lattice parameter below M _s increases first and then decreases. Moreover, the (110) and (002) atomic planes in the Fe-15Mn-0.15C alloy are separated into two peaks: 2 for (002) is 44.16°, 2 for (110) is 44.47°.     

The crack tip strain field of AISI 4340 Part II Experimental measurements

Crack tip strain maps have been measured for AISI 4340 high strength steel. No significant creep was observed. The measured values of CTOD were greater than expected from the HRR model. Crack tip branching was observed in every experiment. The direction of crack branching was in the same direction as a major ridge#x201D; of _yy strain, which in turn was in the same direction as predicted by the HRR model. Furthermore, the measured magnitudes of the _yy strain in this same direction were in general greater than the values predicted by the HRR model. This indicates more plasticity in the crack tip region than expected from the HRR model. This greater plasticity could be related to the larger than expected CTOD values. The following discrepancies between the measured strain fields for AISI 4340 and the HRR predictions are noteworthy: (1) The crack branching. (2) Values of CTOD significantly higher than predicted by HRR. (3) The major ridge of _yy strain an angle of about 60° with the direction of overall propagation of the fatigue precrack, in which the measured magnitudes of the _yy strain were greater than the values predicted by the HRR model. (4) Asymmetric shape of the plastic zone as measured by the _yy strain. (5) Values of shear strain _xy significantly higher than predicted by the HRR model.     

A model with length scales for composites with periodic structure. Steady state heat conduction problem

A new high-order model for analysing distribution of temperature in periodic composites is proposed. The original scalar elliptic problem with Y-periodic coefficients (Y is a cube) is replaced with a vectorial elliptic problem of constant coefficients. The unknown fields are: the averaged distribution of temperature and the vector field which stands for perturbation of the temperature within the cells of periodicity. The recovery of temperature in the original composite is given by the approximation: 0(x)=0(x) +h ^a (x/) _a (x) analogous with the first terms of the two-scale asymptotic expansion known from the homogenization theory. The functions h are defined as approximations of the solutions to the basic cell problems. In contrast to the two-scale expansion the expression for satisfies the boundary condition.     

A Monte Carlo Study of Disorder in the High Pressure Mixed Crystal N2-Ar

In order to obtain a better notion of the experimental results in our laboratory, Monte Carlo calculations have been performed of the N ₂-Ar crystal on the N ₂-rich side, in the p-T region where the and phases exist in pure N ₂. Considering the enthalpy, the system prefers the Ar atoms to be located on the sphere positions. The * phase is present for mixtures down to but is most likely metastable. The *-* transition shifts to lower temperatures with decreasing . The 2 ^nd order transition within the phase continues to exist to even smaller . In contrast to the * -* transition, the transition temperature for the 2 ^nd order transition does not shift to lower temperatures. For a mixture of it is within 5 K from the pure 2 ^nd order transition at a pressure of 7.0 GPa.     

Microdeformation in partially compatible blends of poly(styrene-acrylonitrile) and polycarbonate

Dilute 3-component 1-phase solutions in methylene chloride of poly(styrene-acrylonitrile) PSAN and polycarbonate PC are used to cast phase separated thin films. Films of pure PSAN, pure PC and five intermediate compositions are examined. The films are bonded to copper grids and strained at a constant rate of 4.1 × 10^–6sec^–1. The median tensile strain _v for void formation is determined using an optical microscope and the regions surrounding the voids are examined by TEM. At room temperature and slow strain rates both PSAN and PC plastically deform by shear yielding. For pure PSAN _v was found to be 0.13 whereas for PC _v exceeds 0.23. The addition of the more ductile polymer PC to PSAN at weight fractionsx forx 0.4 decreases _v. In this case voids form in crazes at the boundaries between the PC-rich inclusion and the PSAN-rich matrix. When the PC content is increased tox = 0.8, _v approaches 0.23. The effect of physical ageing (annealing belowT _g the glass transition temperature) on the mode of plastic deformation was also examined over the same compositional range. Physical ageing was found to suppress shear deformation and favour crazing in PSAN and PSAN-rich phases. Because crazes are more susceptible to breakdown than DZ's (shear deformation zones), physical ageing results in a marked decrease in _v. The breakdown statistics of these phase separated partially compatible blends was found to follow a Weibull distribution in strain from which two parameters may be extracted: the Weibull modulus and _w the Weibull scale parameter. is a measure of the breadth of distribution of void initiation and _w is a measure of the median strain to void formation in the films. The behaviour of _w was found to approximately mirror _v. The Weibull modulus appears to be primarily controlled by the matrix phase.     

Effects of Bonding Configuration and Structural Perfection on the Properties of Doped NaNbO -Based Solid Solutions

The effects of bonding configuration (electronegativity) and doping-produced vacancies on the properties of doped NaNbO₃-based solid solutions were studied. The results demonstrate that there is an average electronegativity of the elements involved above which the uniform distortion parameter increases and the relative dielectric permittivity ^T ₃₃/₀decreases with increasing electronegativity, as is common in other solid-solution systems. Below this value, both and ^T ₃₃/₀vary in the opposite way. An explanation for the anomalous behavior of is proposed.     

Effect of Gamma Irradiation on the Piezoelectric Properties of K2Sr4Nb10O30–K6Li4Nb10O30 Solid Solutions

The effect of gamma irradiation on the dielectric ( ₃₃/₀, tan) and piezoelectric (d ₃₁, g ₃₁, K _p, Q _m) properties of ₂Sr₄Nb₁₀O₃₀–K₆Li₄Nb₁₀O₃₀ solid solutions (tetragonal tungsten bronze structure) was studied as a function of K₆Li₄Nb₁₀O₃₀ content. The results demonstrate that increasing the gamma dose to 9 × 10⁵ Gy reduces ₃₃/₀ and tan. With increasing Li⁺ content (filling of triangular channels), d ₃₁, g ₃₁, K _p, and Q _m increase. The results are interpreted in terms of the generation of stable defects and effective redistribution of the energy of gamma radiation over the ceramic sample.     

High-frequency dielectric properties of Mg-Al-Si,Ca-Al-Si and Y-Al-Si oxynitride glasses

Recently developed coaxial line techniques [1] have been used to determine, at room temperature, the values of the real () and imaginary (') parts of the dielectric constants for some Mg-Al-Si, Ca-Al-Si and Y-Al-Si oxynitride glasses over the frequency range 500 MHz to 5 GHz. The frequency dependencies of and ' are consistent with the universal law of dielectric response in that (-_t8)^(n–1) and '^(n–1) for all glass compositions; the high experimental value of the exponent (n=1.0±0.1) suggests the limiting form of lattice loss [2] situation. In this frequency range, as previously reported [3] at longer wavelengths, the addition of nitrogen increases the dielectric constant, (); in both the oxide and oxynitride glasses is also influenced by the cation, being increased with cation type in the order magnesium, yttrium, calcium as at lower frequencies.     

Development of Spectral Selective Multilayer Film for a Variable Emittance Device and Its Radiation Properties Measurements

A smart radiation device (SRD) that is a variable emittance radiator has been developed as a thermal control material for spacecraft. The SRD has the unique feature of large variation of the total hemispherical emittance _H near room temperature. The _H of the SRD changes depending on its temperature. However, there is a drawback of a large solar absorptance _S. It is too large to use as a thermal control material for spacecraft. In order to reduce the large _S, spectral selective multilayer film was developed. This multilayer film reflects solar radiation and transmits far-infrared radiation to maintain the variation in the _H of the SRD. This paper presents thermal radiative properties of the SRD with spectral selective multilayer film. The multilayer film was designed by using a genetic algorithm (GA). The designed multilayer film was evaporated on the surface of the SRD by the electron beam evaporation method. The experimental results of _S and _H of the SRD with the multilayer film agreed well with calculated results.     

Dielectric Permittivity of Eight Gases Measured with Cross Capacitors

A four-ring, toroidal cross capacitor was used to measure accurately the relative dielectric permittivity (p,T) of He, Ar, N₂, O₂, CH₄, C₂H₆, C₃H₈, and CO₂. ( is often called the dielectric constant.) The data are in the range from 0 to 50°C and, in many cases, extend up to 7 MPa. The accurate measurement of (p,T) required a good understanding of the deformation of the gas-filled capacitors with applied pressure. This understanding was tested in two ways. First, the experimental values of (p,T) for helium were compared with theoretical values. The average difference was within the noise, _expt– _theory=(–0.05±0.21)×10^–6, demonstrating that the four-ring cross capacitor deformed as predicted. Second, (p,T) of argon was measured simultaneously on three isotherms using two capacitors: the four-ring capacitor, and a 16-rod cross capacitor made using different materials and a different geometry. The results for the two capacitors are completely consistent, within the specifications of the capacitance bridge. There was a small inconsistency that was equivalent to 1×10^–6 of the measured capacitances, or, for argon, 3×10^–5 A , where A is the zero-density limit of the molar polarizability (–1)/[(+2)].     

Rayleigh's problem for compressible viscous flow

Summary Rayleigh's problem for perfect compressible fluid is studied analytically, following the principles outlined by Howarth. It is assumed that the initial temperature jump is small in comparison with the temperature at rest, that is, =|T _w -T _o |/T _o is a small parameter. Moreover, the Mach number is assumed to be of order of ^1/2, and using the requirement of equal order of smallness for important terms of the Navier-Stokes equations one is able to determine the scales of all dimensional variables. The final set of dimensionless equations is obtained by setting a limit 0. Solution for the main component of velocity is expressed in closed form, and that for the variable part of temperature in integral form valid for any Prandtl number. Initial approximations for secondary velocity and density are also expressed in integral form. For a special case of Pr=3/4, using an expansion of a dissipative function in terms of Hermite polynomials, one obtains closed-form expressions for every unknown quantity in any approximation.     

Nitriding of iron boride to hexagonal boron nitride

A process for preparing hexagonal boron nitride (h-BN) from iron boride (FeB) has been described for the first time. FeB powder was nitrided in ammonia at 700 K for 24 hours yielding non-crystalline BN and -Fe₂N. Subsequent annealing in ammonia for 1 hour at 1273 K resulted in a mixture of crystalline h-BN together with -Fe, -Fe₃N and -Fe₄N. The morphology of the product grains is described. This comprises an iron nitride core loosely encapsulated in a foliated BN layer. The open nature of the product layer may account for the relatively low temperature (700 K) required for the nitriding reaction. These iron containing phases were removed with dilute mineral acid leaving h-BN and trace amounts of FeB₄₉.