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镍的金属有机化学气相沉积 总被引:1,自引:0,他引:1
介绍了用MOCVD技术沉积镍膜的应用状况,以及几种典型前驱体的沉积性能,着重介绍了羰基镍的沉积特性。结合MOCVD技术的最新进展,对镍的化学气相沉积技术了简要的展望。 相似文献
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电沉积方法制备功能性金属化合物薄膜 总被引:7,自引:0,他引:7
本文综述了电沉积方法制备具有超导,电致变色特性的金属氧化物薄膜和具有半导体特性的金属化合物薄膜的基本方法,沉积原理,薄膜性能及存在问题,并对今后的发展进行了展望。 相似文献
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铁电薄膜材料具有优良的铁电、压电、热释电、电光及非线性光学等特性,特别与大规模集成电路相集成,研制各种集成铁电学器件,使得铁电薄膜材料越来越引人注目。已研制的器件有铁电存储器、热释电探测器、光波导、光调制器和微驱动器等,可广泛应用于微电子学、光电子学、集成光学、微机械学等领域。其中铁电存储器最具产业化前景。铁电存贮器具有下列突出的优点:(1)不挥发,断电后永久保存信息;(2)数据存取速度快,比EEPROM快4~5个数量级;(3)可重写次数达10~(10),比EEPROM 相似文献
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本对气相沉积技术的发展与最新趋势给出了述评,重点强调了等离子体辅助化学气相沉积(PCVD)的优势,进展及其在工模具领域的应用。 相似文献
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介绍了化学气相沉积金刚石薄膜的的主要方法,着重讨论了金刚石的摩擦学性能研究,简要分析了化学气相沉积金刚石薄膜中存在的问题。 相似文献
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采用低压MOCVD方法,在(0001)Al2O3衬底上沉积了ZnO薄膜.研究了Ⅵ族源O2气流量的变化对薄膜结构、表面形貌及光致发光特性的影响.增加O2气流量,ZnO薄膜结晶质量有所降低,半高宽从0.20°展宽至0.30°,由单一c轴取向变成无取向薄膜.同时,生成的柱状晶粒平均尺寸减少,晶粒更加均匀,均方根粗糙度减小.PL谱分析表明随O2气流量加大,带边峰明显增强,深能级峰明显减弱,ZnO薄膜光学质量提高.这些事实说明在本实验条件下,采用低压MOCVD方法生长的ZnO薄膜在光致发光特性主要依赖于Zn、O组份配比,而不是薄膜的微观结构质量. 相似文献
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Synthesis and characterization of BN thin films prepared by plasma MOCVD with organoboron precursors
Boron nitride (BN) films have contributed to improvement of tribological parts. For this study, we prepared films using plasma MOCVD with an organoborate precursor and investigated the mechanical properties and structure of BN films. The BN films were formed on specimens of silicon wafers and tungsten carbide (WC) substrates at low temperatures of less than 500 °C. Hardness tests were carried out to evaluate mechanical properties of BN films. The structure of BN films was investigated using XRD, Raman, and FT-IR spectra. 相似文献
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溶胶-凝胶法制备c轴取向生长ZnO薄膜 总被引:1,自引:0,他引:1
采用sol-gel法,在普通载玻片上使用旋转涂覆技术生长了具有c轴择优取向生长的ZnO薄膜.采用热分析、XRD、SEM等手段对薄膜样品进行了表征.热分析结果表明,二水醋酸锌-乙醇胺-乙二醇甲醚体系sol-gel的热分解过程与纯二水合乙酸锌的分解过程大相径庭.ZnO薄膜的sol-gel分解趋于在较窄的温度范围内一步完成.样品在XRD图谱中表现出明显的c轴择优取向.此外,SEM照片也表明:ZnO薄膜样品中间区域和边缘区域的表面形貌相差甚远.探讨了预热处理温度、退火温度等工艺条件对ZnO薄膜的结构性能的影响,最佳的预热处理温度被认为在ZnO相完全生成温度附近. 相似文献
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Pierre-Eymeric Janolin 《Journal of Materials Science》2009,44(19):5025-5048
Strain engineering aims to take advantage of the stress field imposed by substrates on thin films. It requires an understanding
of the consequences of stress fields on the physical properties of the deposited materials. This is achieved in ferroelectric
thin films through the use of misfit-strain phase diagrams that show the stability regions for the possible phases. These
encompass bulk phases as well as new ones exhibiting symmetries that are not present in the bulk. For the solid solution lead
zirconate–lead titanate, Pb(Zr1−x
Ti
x
)O3, monoclinic phases found in the bulk morphotropic phase boundary region and associated to concentrations exhibiting the highest
properties can be stabilized on a wider range of composition in thin films. In addition, phases of lower symmetry can be stabilized
through the use of anisotropic biaxial stress fields, generated by orthorhombic substrates for example. Another crucial aspect
of the influence of biaxial stress fields is the generation of domain structures. Theoretical tools as well as experimental
verifications have provided much insight on the underlying physics. We, therefore, present here an overview of the influence
of both iso- and anisotropic biaxial stress fields on the structures and properties of ferroelectric thin films exemplified
on Pb(Zr1−x
Ti
x
)O3. 相似文献
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ZnO thin films were prepared on fused silica from a single spin-coating deposition of a sol-gel prepared with anhydrous zinc acetate [Zn(C2H3O2)2], monoethanolamine [H2NC2H4OH ] and isopropanol. Crystallization annealing was performed over the range 500 to 650 °C. X-ray analysis showed that thin films were preferentially orientated along the [002] c-axis direction of the crystal. The films had a transparency of greater than 85% in the visible region for sol-gels with a zinc content of up to 0.7 M and exhibited absorption edges at ∼ 378 nm. The optical band-gap energy was evaluated to be 3.298-3.306 eV. Photoluminescence showed a strong emission centered at ca. 380 nm along with a broad yellow-orange emission centered at ca. 610 nm. Single step sol-gel thin film deposition in the film thickness range from 80 nm to 350 nm was demonstrated. The effect of sol-gel zinc concentration, film thickness and crystallization temperature on film microstructure, morphology and optical transparency is detailed. A process window for single spin coating deposition of c-axis oriented ZnO discussed. 相似文献
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Sputtering preparation of ferroelectric PLZT thin films and their optical applications 总被引:1,自引:0,他引:1
Adachi H Wasa K 《IEEE transactions on ultrasonics, ferroelectrics, and frequency control》1991,38(6):645-655
Preparation of epitaxial PLZT thin films on sapphire has been investigated, and excellent ferroelectric properties such as piezoelectricity and electrooptic effect with high transparency were obtained in thin films. Moreover, a preparation process was developed involving the multitarget sputtering method, and strict control of film composition and epitaxial growth with the buffer layer of graded composition were performed. Using these PLZT thin films, some optical applications, including an acoustooptic deflector and an electrooptic guided-light switch, are shown. 相似文献