Design and application of pipelined dynamic CMOS ternary logic andsimple ternary differential logic

Dynamic CMOS ternary logic circuits that can be used to form a pipelined system with nonoverlapped two-phase clocks are proposed and investigated. The proposed dynamic ternary gates do not dissipate DC power and have full voltage swings. A circuit structure called the simple ternary differential logic (STDL) is also proposed and analyzed, and an optimal procedure is developed. An experimental chip has been fabricated in a 1.2-μm CMOS process and tested. A binary pipelined multiplier has been designed, using the proposed dynamic ternary logic circuits in the interior of the multiplier for coding of radix-2 redundant positive-digit number. The structure has the advantages of higher operating frequency, less latency, and lower device count as compared with the conventional binary parallel pipelined multiplier. The advantages of the circuits over other dynamic ternary logic circuits are shown     

基于模代数的三值维持阻塞触发器及其应用

本文给出了基于模代数理论的三值维持阻塞触发器,并将其应用到时序逻辑电路设计中。由于多值模代数中的两个基本运算和运算结果均为多值信号,所以它的应用避免了以往在采用基于Ｐｏｓｔ代数的三值触发器时,由于输入、输出信号不匹配而必须增加附加编码电路的问题。设计实例表明,该触发器具有更强的逻辑功能,它使得移位寄存器类的时序电路设计得以显著简化。     

Demonstration of programmable ternary graphene field-effect transistor using ferroelectric polymer doping

Ternary logic technology facilitates simplifying logic circuits and reducing power consumption. In this study, a universal ternary device that can be programmed into an n-type and p-type ternary device is demonstrated using a graphene field-effect transistor with a P(VDF-TrFE)/graphene stack channel. The feasibility of a standard ternary inverter function is demonstrated by complementary ternary GFETs, which have discretely programmed n-doped and p-doped graphene channels with different channel widths. Even though the performance of the ternary inverter should be improved further, the concept of the programmable ternary logic, based on channel width modulation and ferroelectric doping, is useful for future experimental studies on the multi-valued logic architecture.     

高信息密度的ECL集成电路设计

本文从多值逻辑能提高集成电路处理信息量的观点出发对三值ECL高速集成电路进行研究.文中提出符合双极型晶体管工作原理的基本运算,并讨论了有关性质.在此基础上提出差动电流开关理论,并用于设计若干基本三值ECL电路.使用SPICE 2G5程序的计算机模拟表明,这些电路具有正确的逻辑功能及理想的静态与瞬态特性.     

DESIGN OF SYMMETRIC TERNARY CURRENT-MODE CMOS CIRCUITS

By applying switch-signal theory, the theory of transmission current-switches based on symmetric ternary logic is proposed, this theory is suitable to design symmetric ternary current-mode CMOS circuits. The symmetric ternary current-mode CMOS circuits designed by using this theory not only have simpler circuit structures and correct logic functions, but also can process bidirectional signals.     

对称三值电流型CMOS电路设计

本文应用开关信号理论,建立了采用对称三值逻辑的传输电流开关理论,该理论能指导从开关级设计对称三值电流型CMOS电路.应用该理论设计的对称三值电流型CMOS电路不仅具有简单的电路结构和正确的逻辑功能,而且能处理具有双向特性的信号.     

Theory of differential current switches and logic design of ternary ECL circuits at switch level

Starting from the viewpoint that the switch states and signal values in a digital circuit should be described separately by two different kinds of variable, the interaction between the switching element and signal in multi-valued ECL circuits is analysed and two types of connection operations, threshold switching operation and current switching operation, are proposed. The properties and circuit realizations of these new operations are discussed and the theory of differential current switches applicable to ECL circuits is established. Examples of basic ternary ECL circuits confirm that this theory can effectively guide the logic design of ternary ECL circuits at switch level. The circuits are verified by using the SPICE II program. They have the same logic level difference and transient characteristic as binary ECL circuits. Since the multi-valued ECL circuit uses only one set of power supply and can set several threshold values by using reference levels, it can be fabricated using conventional ECL techniques and is compatible with binary ECL circuits.     

对称三进制逻辑CMOS电路的试制

根据有关对称三进制逻辑的资料,结合CMOS电路生产工艺特点,设计并试制了对称三值逻辑CMOS系列电路。其中包括倒相器与非门、或非门、变形反相器和T门共五种基本电路。本文叙述了设计方案,生产工艺及结果讨论。     

Design of ternary adiabatic multiplier on switch-level

The design of ternary adiabatic multiplier adopting switch-level design techniques is proposed in this paper. First by using the theory of three essential circuit elements, the switch-level functional expressions of the carry and product circuit models, which compose one bit ternary adiabatic multiplier, are derived. Consequently, the corresponding circuit structures can be obtained, and the evaluation and energy recovery for ternary circuit can be realized by bootstrapped NMOS transistors and cross-memory structure. Based on the designed circuits, the four bits ternary adiabatic multiplier is further realized by adopting the ripple carry manner. The PSPICE simulation results indicate that the designed circuits have correct logic function and are characterized with distinctive low power consumption.     

三值双传输管电路的通用综合方法

提出采用双传管逻辑设计三值电路的方法,对每个MOS管的逻辑功能均采用传输运算予以表示以实现有效综合.建立了三值双传输管电路的反演法则和对偶法则.新提出的三值双传输管逻辑电路具有完全基于标准CMOS工艺,无需对MOS管作任何阈值调整,结构简单、规则,输入信号负载对称性好,逻辑摆幅完整以及无直流功耗等特点.采用TSMC 0.25μm工艺参数和最高电压为3V的HSPICE模拟结果验证了所提出综合方法的正确性.     

三值双传输管电路的通用综合方法

提出采用双传管逻辑设计三值电路的方法,对每个MOS管的逻辑功能均采用传输运算予以表示以实现有效综合.建立了三值双传输管电路的反演法则和对偶法则.新提出的三值双传输管逻辑电路具有完全基于标准CMOS工艺,无需对MOS管作任何阈值调整,结构简单、规则,输入信号负载对称性好,逻辑摆幅完整以及无直流功耗等特点.采用TSMC 0.25μm工艺参数和最高电压为3V的HSPICE模拟结果验证了所提出综合方法的正确性.     

A Novel Design Approach for Ternary Compressor Cells Based on CNTFETs

Using multiple-valued logic provides more information transmission over a signal line. So it could solve the binary logic circuits problems such as interconnections requirement. In this paper, a universal method for designing ternary 3-2 and 4-2 compressor cells based on carbon nanotube field-effect transistors (CNTFETs) is presented. The proposed circuits use unique properties of CNTFETs, such as adjustable threshold voltage by changing CNT diameter and ballistic carrier transportation. In both designs transmission gates, ternary decoder and standard ternary buffers with different threshold voltages are used. The proposed compressors receive three (for 3-2 compressor) or four (for 4-2 compressor) ternary digits, produce the summation of these digits and show the results in two ternary digits (Sum, Carry). For evaluation and simulation the proposed circuits, Synopsys HSPICE simulator with 32 nm compact model is used in different simulation conditions.     

三值钟控绝热静态随机存储器设计

通过对多值逻辑、绝热电路和三值SRAM结构的研究,提出一种新颖的三值钟控绝热静态随机存储器(SRAM)的设计方案。该方案利用NMOS管的自举效应,以绝热方式对SRAM的行列地址译码器、存储单元、敏感放大器等进行充放电,有效恢复储存在字线、位线、行列地址译码器等大开关电容上的电荷,实现三值信号的读出写入和能量回收。PSPICE模拟结果表明,所设计的三值钟控绝热SRAM具有正确的逻辑功能和低功耗特性,在相同的参数和输入信号情况下,与三值常规SRAM相比,节约功耗达68%。     

Resonant-tunneling diode and HEMT logic circuits with multiplethresholds and multilevel output

By using resonant-tunneling diodes (RTDs) and high electron mobility transistors (HEMTs), we implement a new class of logic circuits that operate with multiple thresholds and multilevel output. The basic idea of the circuits is to synthesize transfer characteristics by key logic elements, namely, up and down literals. We first describe two fundamental logic circuits based on this idea: a ternary inverter and a literal gate. Then we present experimental results on these circuits fabricated by integrating InP-based RTDs and HEMTs. It is found that these circuits operate successfully with threshold voltages and output levels that have been predicted from individual device characteristics. Consequently, the validity of the basic idea behind the circuits presented here is proven. The device counts and the number of logic stages required for the present circuits are less than half those for conventional ones. A possible application is finally discussed     

The design of ternary logic units on the basis of the standard MOS technology

Implementations of the basic ternary logic element and digital units with the use of the balanced three-valued code are suggested. The logic states are supported by a bipolar power source. The circuits considered in the study are expected to be produced by the standard MOS technology. The results of simulation of и V-supplied units with the use of the parameters of the 0.18 μm MOS technology based on the platform Cadence Virtuoso are presented. The steady-state current consumption of the basic ternary logic element does not exceed 300 nA. The solutions suggested in the study provide the processing of a ternary signal with the minimum pulse duration of about 10 ns.     

基于开关信号理论的三值电流型CMOS电路设计

本文应用开关信号理论对电流型CMOS电路中MOS传输开关管与电流信号之间的相互作用进行了分析,并提出了适用于电流型CMOS电路的传输电流开关理论。应用该理论设计的三值全加器等电路具有简单的电路结构和正确的逻辑功能,从而证明了该理论在指导电流型CMOS电路在开关级逻辑设计中的有效性。     

基于传输开关理论的电流型多值CMOS电路设计

本文以开关信号理论为指导，对电流型CMOS电路中开关变量和信号变量的相互作用进行了分析，并引入了适用于CMOS电路的电流开关理论。基于电流传输开关理论，对几类重要的三值CMOS电路进行了设计，结果表明，应用该理论能获得简单的电路设计。从而进一步完善了开关级逻辑电路设计的研究。     

DESIGN OF TERNARY CURRENT-MODE CMOS CIRCUITS BASED ON SWITCH-SIGNAL THEORY

By applying switch-signal theory, the interaction between MOS transmission switch-ing transistor and current signal in current-mode CMOS circuits is analyzed, and the theory oftransmission current-switches which is suitable to current-mode CMOS circuits is proposed. Thecircuits, such as ternary full-adder etc., designed by using this theory have simpler circuit struc-tures and correct logic functions. It is confirmed that this theory is efficient in guiding the logicdesign of current-mode CMOS circuits at switch level.     

Differential Cascode Voltage Switch (DCVS) Strategies by CNTFET Technology for Standard Ternary Logic

Differential Cascode Voltage Switch (DCVS) is a well-known logic style, which constructs robust and reliable circuits. Two main strategies are studied in this paper to form static DCVS-based standard ternary fundamental logic components in digital electronics. While one of the strategies leads to fewer transistors, the other one has higher noise margin. New designs are simulated with HSPICE and 32 nm CNTFET technology at various realistic conditions such as different power supplies, load capacitors, frequencies, and temperatures. Simulations results demonstrate their robustness and efficiency even in the presence of PVT variations. In addition, new noise injection circuits for ternary logic are also presented to perform noise immunity analysis.     

Design of a DTCTGAL circuit and its application

By research on the switch-signal theory for multiple-valued logic circuits, the theory of three essential elements and the principle of adiabatic circuits, a design scheme for a double power clock ternary clocked transmission gate adiabatic logic (DTCTGAL) circuit is presented. The energy injection and recovery can be conducted by the bootstrapped NMOSFET, which makes the circuit maintain the characteristics of energy recovery as well as multiple-valued input and output. An XOR/XNOR circuit based on DTCTGAL is also presented using this design scheme. Finally, using the parameters of a TSMC 0.25 μm CMOS device, PSPICE simulation results indicate that the proposed circuits have correct logic and significant low power characteristics.