一种16位高精度分段式电阻型DAC设计

采用0.5μm BCD工艺,设计了一种16位分段式电阻型高精度DAC。根据集成电路工艺中电阻的一般失配特性,确定电阻型DAC采用“4+12”的分段结构,分别为高位温度计码结构和低位二进制码结构。整个电路中的电阻类型均采用高阻型电阻,减小了DAC开关结构中的失配,极大降低了整体功耗。电路结构紧凑,整体面积小,仅有2.397 6 mm²。结合后仿真结果,对版图进行合理调整,使电路具有较低的微分非线性(DNL),之后采用校正结构,进一步降低DNL。电路测试结果表明,输入数字信号为10 kHz的正弦波时,DAC的无杂散动态范围(SFDR)为57.72 dB,DNL为0.5 LSB,积分非线性(INL)为1 LSB,功耗为1.5 mW。     

一种采用电阻串复用结构的12位SAR ADC

针对带数字校准功能的逐次逼近模/数转换器(SAR ADC),提出将主DAC、校准DAC和基准电压产生电路的电阻串进行复用,从而显著减少了芯片面积,降低了功耗。相比6+6两段电容结构DAC,采用电阻电容混合结构的主DAC和校准DAC节约了37%的版图面积。在0.18μm CMOS工艺下,通过Hspice仿真,SAR ADC的DNL和INL均小于0.4LSB,SNR为75dB。系统正常工作时,总功耗为3.1mW,比不采用电阻串复用的结构减少0.9mW。     

应用于视频中的R2R梯形电阻网络DAC

本文设计了一款用于视频中的R2R梯形电阻网络数模转换器。其电路结构包含8位R2R梯形电阻网络DAC、输出放大器、低电平转高电平电路、模拟开关、参考电压和锁存器电路。电路设计是基于CSM0.11μm CMOS Logic工艺,经HSPICE仿真表明,DAC的积分非线性误差（INL）和微分非线性误差（DNL）分别小于1.65LSB和0.23LSB,功耗仅为3.86mW。     

一种12位低功耗电阻串架构DAC

利用分段式电阻串结构,基于CMOS工艺设计了一款12位3.4 MHz低功耗数模转换器(DAC)芯片。结合建立速度和静态性能的设计指标,确定“5+7”式分段结构,在保证建立速度的条件下考虑到电阻的失配性,实现良好的微分非线性(DNL)和积分非线性(INL)特性。后仿真结果表明,在3.4 MHz速度下,常温下DNL为0.14 LSB,INL为1 LSB,在-40～125℃下,DNL为0.6 LSB,INL为2 LSB,并且表现出-84 dB的总谐波失真(THD),以及在3 V电压下378μW的极低功耗,版图面积缩小到1.09 mm×0.91 mm。     

Wuxi Branch of Southeast University, Wuxi Jiangsu 214028, China; 2.The 58th Institute of China Electronic Technology Company, Wuxi Jiangsu 214035, China

在研究高速D/A转换器的基础上,设计了一种5 V 10 bit高速分段式温度计码D/A转换器.设计的5-1-4温度计译码电路以及对版图布局的优化,使得DAC的DNL和INL最小,该电路的核心由三段式温度计编码控制的47个电流源构成.基于上华0.5μm工艺,采用HSPICE仿真工具对其进行仿真,得到在200 MHz的采样频率下对50 Ω负载满量程输出为45mA,非线性误差为DNL＜0.5LSB,INL＜0.75LSB.     

一种10位电容电阻混合型双极性D/A转换器

在加速度计中,需要数模转换器(DAC)提供一个稳定的偏压来消除重力加速度,要求DAC具有高精度、单调性和小面积等特性。为了解决传统电阻型DAC存在的大面积和传统电容DAC中存在的非单调性等问题,提出了一种电容电阻混合型DAC结构,并设计了一个10位的DAC,用于提供稳定偏压。提出一种新的电容共质心的版图布局,提高了DAC的精度。该DAC在0.5μm CMOS工艺上得以验证实现,微分非线性误差(DNL)最大为0.50LSB,积分非线性误差(INL)最大为0.82LSB,在5V和-5V的双电源供电条件下,芯片功耗为16mW,完全满足了工程需求。     

一种10bit 200MS/s电流型DAC设计

基于SMIC 0.18μm CMOS工艺,采用了具有电荷抽放技术的电流源结构,以及新型锁存电路产生同步控制信号.设计了一个10位精度的数模转换器(DAC),电源电压为1.8 V,在50负载条件下,DAC满量程输出电流为4mA.当采样频率为200 MHz,输入频率为5 MHz的情况下.满量程功耗为15 mw.微分非线性误差(DNL)为0.25 LSB,积分非线性误差(INL)为0.15 LSB,无杂散动态范围达到79.7 dB.     

一种10位40 MHz两步式A/D转换器

提出了一种基于两步转换法(5 6)的高速高精度A/D转换器体系结构,其优点是可以大幅度降低芯片的功耗及面积。采用这种结构,设计了一个10位40 MHz的A/D转换器,并用0.6μm BiCMOS工艺实现。经过电路模拟仿真,在40 MHz转换速率,1 V输入信号(Vp-p),5 V电源电压时,信噪比(SNR)为63.3 dB,积分非线性(INL)和微分非线性(DNL)均小于10位转换器的±0.5 LSB,电源电流为85.4 mA。样品测试结果:SNR为55 dB,INL和DNL小于10位转换器的±1.75 LSB。     

一种不同缩放类型组合的低功耗DAC

提出了一种内置于SAR ADC的低功耗DAC,采用不同缩放类型分段组合的方式,明显减小了芯片占用面积,降低了功耗。基于华润上华公司的0.35 μm CMOS工艺,利用Cadence Spectre仿真工具对电路进行分析,结果显示该DAC整体电路的功耗为0.93 mW,最大积分非线性(INL)为－0.74 LSB,最大微分非线性(DNL)为－0.48 LSB,优值(FOM)为3.81,版图的面积为0.086 mm²,很好地满足了低功耗和小面积的要求。     

分段式电流舵 D/A转换器抗di/dt噪声设计

设计了一个8位50MHzD/A转换器(DAC),采用5+3分段式电流舵差分输出结构,其中高5位采用温度计码方式译码,低3位采用二进制译码方式;从各电路模块设计结构上提高DAC抗di/dt噪声的能力;设计了一个低交叉点开关驱动电路,有效地降低了输出毛刺,减小了数字电路di/dt噪声的影响。采用VIS0.35μmCMOS工艺进行仿真,结果表明,微分非线性(DNL)和积分非线性(INL)均小于0.15LSB。     

A low-Voltage 10-bit CMOS DAC in 0.01-mm/sup 2/ die area

A low-voltage 10-bit digital-to-analog converter (DAC) for static/dc operation is fabricated in a standard 0.18-/spl mu/m CMOS process. The DAC is optimized for large integrated circuit systems where possibly dozens of such DAC would be employed for the purpose of digitally controlled analog circuit calibration. The DAC occupies 110 /spl mu/m/spl times/94 /spl mu/m die area. A segmented R-2R architecture is used for the DAC core in order to maximize matching accuracy for a minimal use of die area. A pseudocommon centroid layout is introduced to overcome the layout restrictions of conventional common centroid techniques. A linear current mirror is proposed in order to achieve linear output current with reduced voltage headroom. The measured differential nonlinearity by integral nonlinearity (DNL/INL) is better than 0.7/0.75 LSB and 0.8/2 LSB for 1.8-V and 1.4-V power supplies, respectively. The DAC remains monotonic (|DNL|<1 LSB) as INL reaches 4 LSB down to 1.3-V operation. The DAC consumes 2.2 mA of current at all supply voltage settings.     

一种GSM无线发射系统中的低功耗数模转换器

针对GSM标准无线发射系统中数模转换器(DAC)的要求,分析了影响其性能和功耗的限制因素,并在SMIC 0·13μm CMOS工艺1.2 V电源电压下设计了一款10位电流驱动型数模转换器(Current-steering DAC).使用最佳拟合线的算法衡量电流源匹配的随机误差对DAC静态非线性的影响,使得DAC的电流源...     

2Gbps GaAs单片4bit数模转换器的设计与实现

详述了单片超高速2G bps G aA s 4b it数模转换器(DAC)的设计、制造及测试。在南京电子器件研究所标准76 mm G aA s工艺线采用0.5μm全离子注入M ESFET工艺完成流片。芯入输入输出阻抗实现在片50Ω匹配。4 b it DAC的微分非线性(DN L)为±0.22最低有效位(LSB),积分非线性(IN L)为±0.45LSB,达到5.2 b it的转换精度。该单片电路提供差分互补输出,长周期输出特性无漂移。其最高转换速率可达2 G bps,建立时间小于250 ps,电路核心部分功耗为110 mW。     

一种数字CMOS工艺制造的10位100MS/s流水线ADC

介绍了采用0.18μm数字工艺制造、工作在3.3V下、10位100MS/s转换速率的流水线模数转换器。提出了一种适用于1.5位MDAC的新的金属电容结构,并且使用了高带宽低功耗运算放大器、对称自举开关和体切换的PMOS开关来提高电路性能。芯片已经通过流片验证,版图面积为1.35mm×0.99mm,功耗为175mW。14.7MS/s转换速率下测得的DNL和INL分别为0.2LSB和0.45LSB,100MS/s转换速率下测得的DNL和INL分别为1LSB和2.7LSB,SINAD为49.4dB,SFDR为66.8dB。     

一种12bit流水线型模数转换器的研究与设计

本文设计和研究了一种低功耗12Bit 流水线模数转换器的结构,其采用了TSMC 0.18um工艺设计,3.3V单电源电压,5MHz采样率,动态范围为1V,INL为0.5LSB,DNL为2LSB,通过详细的电路原理分析和软件Cadence的仿真,并流片测试,性能达到设计初衷。     

A power optimized 13-b 5 Msamples/s pipelined analog-to-digitalconverter in 1.2 μm CMOS

A 13-b 5-MHz pipelined analog-to-digital converter (ADC) was designed with the goal of minimizing power dissipation. Power was reduced by using a high swing residue amplifier and by optimizing the per stage resolution. The prototype device fabricated in a 1.2 μm CMOS process displayed 80.1 dB peak signal-to-noise plus distortion ratio (SNDR) and 82.9 dB dynamic range. Integral nonlinearity (INL) is 0.8 least significant bits (LSB), and differential nonlinearity (DNL) is 0.3 LSB for a 100 kHz input. The circuit dissipates 166 mW on a 5 V supply     

一种新颖的低非线性全数字多相时钟产生电路

通过对传统的全数字多相位时钟产生电路进行分析和总结,提出一种新颖的延时校准算法。该算法通过优化调整延时单元的顺序,大大改善了全数字多相位时钟产生电路的非线性。整个电路基于全数字延迟锁相环,采用0.13μm CMOS工艺实现,并成功用于时间数字转换器中。输入时钟频率范围在110 MHz到140 MH间,对应的输出相位差为446 ps到568 ps,积分非线性小于0.35 LSB,微分非线性小于0.33 LSB。     

A 1.5 V 12-bit 16 MSPS CMOS Pipelined ADC with 68 dB Dynamic Range

A 1.5 V, 12-bit, 16 MSPS analog-to-digital converter was implemented in 0.25 μm 1P5 M standard CMOS process with MIM capacitors. The converter achieves a peak SNDR of 66.5 dB with 5.12 MSPS and that of 63.0 dB with 16.384 MSPS. The dynamic range is 68 dB under both sampling rates. The maximum INL of ±0.8 LSB and DNL of ±0.5 LSB were measured under 5.12 MSPS, while those of 16.384 MSPS decreased to ±3.1 and ±1.0 LSB, respectively. An embedded bandgap reference circuit that provides the conversion voltage range is also presented with 1.5 V supply voltage. The total power consumption of this converter was 138 mW under 16.384 MSPS or 97 mW under 5.12 MSPS. The total area of this chip is 2.8 × 2.5 mm. This chip was implemented without calibration or trimming approaches.     

Design of a 12-bit high-speed CMOS D/A converter using a new 3D digital decoder structure useful for wireless transmitter applications

In this paper a 12-bit Nyquist current-steering digital-to-analog converter (DAC) is implemented using TSMC 0.35 μm standard CMOS process technology. The proposed DAC is an essential part in baseband section of wireless transmitter circuits. Using oversampling ratio (OSR) for it leads to avoid use of an active analog reconstruction filter. The optimum segmentation (75%) has been used to get the best DNL and reduce glitch energy. This segmentation ratio guarantees the monotonicity. Higher performance is achieved using a new 3D thermometer decoding method which reduces the area, power consumption and the number of control signals of the digital section. Using two digital channels in parallel, helps reach 1 GHz sampling frequency. Simulations indicate that the DAC has an accuracy better than 10.7-bit for upcoming higher data rate standards (IEEE 802.16 and 802.11n), and a spurious-free-dynamic-range (SFDR) higher than 64 dB in whole Nyquist frequency band. The post layout four corner Monte-Carlo simulated INL is better than 0.74 LSB while simulated DNL is better than 0.49 LSB. The analog voltage supply is 3.3 V while the digital part of the chip operates with only 2.4 V. Total power consumption in Nyquist rate measurement is 144.9 mW. Active area of chip is 1.37 mm².