Foreword, Jun. 1976

Field-Effect Transistor Technology is a very dynamic field in microwaves today. Improvements in both low-noise and high-power FET's are being made continuously in many countries around the world. It is the purpose of this Special Issue to introduce this topic with a comprehensive review paper and to highlight advances in the development of microwave FET's and their applications. Authors from Japan, Europe, and North America report recent achievements of ongoing work in this issue. Their contributions reflect the following trends in the direction of developments.     

Introduction, Nov. 1970

After more than five years of intensive research and development, avalanche diodes and transferred electron devices are established as useful and reliable microwave power generators. They have recently been employed increasingly in both military and commercial systems. Many manufacturers now have production capabilities for these devices, and fabrication technology has reached a sophisticated level. Volume production at relatively low cost is now feasible. Avalanche diodes and transferred electron devices now compete favorably on a cost and performance basis with vacuum tubes and solid-state harmonic generators in a wide variety of power-generation applications.