激光处理GaN薄膜的研究

通过激光损伤实验,报道了GaN薄膜10.6μm CO2激光的损伤阈值是64 J/cm2;为了改善GaN薄膜质量,对其进行了10.6μm CO2激光辐照处理,结果表明,处理后GaN薄膜的缺陷密度明显降低.并对机理进行了分析.     

皮秒激光抛光KDP晶体的工艺研究

为了改变KDP晶体精密加工难和效率低的状态,采用皮秒超快激光抛光KDP晶体的新方法,系统地研究了激光波长、单脉冲能量密度、激光束入射角、光斑搭接率、扫描方式以及激光焦深等因素对激光抛光KDP晶体质量的影响规律,并对激光与KDP晶体的相互作用机理进行了分析。结果表明,在皮秒激光波长λ=355nm、聚焦镜焦距f=56mm、激光束入射角α=84°、激光重复频率F=800kHz、脉冲能量密度Q=2.4J/cm2、光斑搭接率O=60%、45°多方向交叉扫描以及加工次数T=10次的优化参量条件下,KDP晶体表面粗糙度均方根值可达到76nm。这一结果使激光抛光技术的研究得到了进一步补充。     

GaN薄膜制备及脉冲激光沉积法的研究进展

介绍了国内外制备GaN材料的历史和现状。分析了GaN材料及其薄膜的各种制备工艺的特点,并详细介绍了采用激光沉积工艺制备GaN薄膜的研究进展。     

脉冲激光沉积GaN薄膜的研究进展

脉冲激光沉积(PLD)技术凭借其低温生长优势,逐步在GaN薄膜外延领域得到广泛应用。回顾了近年来PLD技术外延生长GaN薄膜的研究进展,包括新型衬底上的GaN薄膜外延研究进展,以及作为克服异质外延的重要手段——缓冲层技术的发展现状。从目前的研究进展可以看出,应用PLD技术制备GaN薄膜及其光电器件具有广阔的发展前景。     

激光化学复合抛光工艺参量对304不锈钢性能的影响

为了提高304不锈钢表面抛光质量，采用激光化学复合抛光的方法分别在纯净水和抛光液中对304不锈钢进行抛光实验研究，并对1064nm激光的加工功率和扫描次数对加工区域表面形貌和表面质量的影响进行了分析。气泡对抛光液在不锈钢表面形成的钝化膜产生破坏作用，造成抛光效果不均匀，表面粗糙度增大。结果表明，在抛光液中的激光抛光在抑制表面氧化发黑的同时，能够显著改善表面形貌，表面粗糙度由0.845μm下降到0.181μm；激光化学复合抛光304不锈钢表面质量与抛光功率和扫描次数有密切关系；当抛光功率过高或者扫描次数过大时，304不锈钢表面会产生大量气泡。采用激光化学复合抛光，可以提高不锈钢抛光质量、减少环境污染，该方法具有极大的应用前景。     

深紫外全固态激光源

深紫外(DUV)全固态激光(DPL)源,指输出波长短于200 nm的固体激光,它易于实用化与精密化,是一种新型激光源.综述了它的历史、现状、发展及应用.     

激光抛光化学气相沉积金刚石膜

讨论了激光抛光金刚石膜机理、影响因素,分析了激光抛光金刚石膜理论模型、激光抛光后金刚石膜的粗糙度极限,提出要实现金刚石膜特别是厚膜的精密抛光须考虑激光辅助复合抛光或其它抛光工艺。     

193 nm深紫外固体激光技术探索

对193 nm深紫外激光技术实现途径进行了系统地分析,提出了一种可获得高重复频率、高光束质量的深紫外固体激光技术途径,分析了涉及的关键技术,对实用化深紫外固体激光源的研制具有一定的参考价值。     

脉冲激光双光束沉积掺Mg的GaN薄膜的研究

采用脉冲激光双光束沉积系统在Si(111)衬底上生长了掺Mg的GaN薄膜和未掺杂GaN薄膜。利用X射线衍射(XRD)、原子力显微镜(AFM)、室温范德堡霍尔测量及光致发光(PL)光谱对两类薄膜进行对比分析，结果显示，所生长的GaN薄膜均为六方纤锌矿晶体结构，掺Mg可细化所生长的GaN薄膜晶粒。随着掺Mg量的增加，GaN薄膜无需后处理即可由”型导电转化为p型导电，GaN薄膜的光学性能随p型载流子浓度增大而提高；然而掺Mg却导致GaN薄膜结晶质量下降，掺镁量过大的GaN薄膜中p型载流子浓度反而减少，光致发光中黄发射峰增强较大。研究表明通过优化脉冲激光双光束沉积参数无需任何后处理可直接获得高空穴载流子浓度的p型GaN薄膜。     

深紫外飞秒激光脉宽测量

为准确测量193 nm深紫外飞秒激光的脉冲宽度,基于氟化钙的双光子荧光效应,设计并搭建了用于紫外飞秒激光脉冲的脉宽测量系统。双光子荧光信号强度与入射激光光强的平方依赖关系证明了获得双光子荧光信号的可靠性。利用插入法进行了CCD探测系统的数值标定,获得单像素对应的时间尺度为7.35 fs。单脉冲测量下,得到193 nm深紫外飞秒激光的脉宽为476.1 fs,与利用光谱法进行测量计算得到的结果基本吻合。     

GaN自支撑衬底的化学机械抛光研究

Chemical mechanical polishing （CMP） has been used to produce smooth and scratch-free surfaces for GaN. In the aqueous solution of KOH, GaN is subjected to etching. At the same time, all surface irregularities, including etch pyramids, roughness after mechanical polishing and so on will be removed by a polishing pad. The experiments had been performed under the condition of different abrasive particle sizes of the polishing pad. Also the polishing results for different polishing times are analyzed, and chemical mechanical polishing resulted in an average root mean square （RMS） surface roughness of 0.565 nm, as measured by atomic force microscopy.     

Chemical mechanical polishing of freestanding GaN substrates

Chemical mechanical polishing (CMP) has been used to produce smooth and scratch-free surfaces for GaN. In the aqueous solution of KOH, GaN is subjected to etching. At the same time, all surface irregularities, including etch pyramids, roughness after mechanical polishing and so on will be removed by a polishing pad. The experiments had been performed under the condition of different abrasive particle sizes of the polishing pad. Also the polishing results for different polishing times are analyzed, and chemical mechanical polishing resulted in an average root mean square (RMS) surface roughness of 0.565 nm, as measured by atomic force microscopy.     

Low-threshold lasing in a plasmonic laser using nanoplate InGaN/GaN

Plasmonic nanolaser as a new type of ultra-small laser,has gain wide interests due to its breaking diffraction limit of light and fast carrier dynamics characters.Normally,the main problem that need to be solved for plasmonic nanolaser is high loss induced by optical and ohmic losses,which leads to the low quality factor.In this work,InGaN/GaN nanoplate plasmonic nanolaser with large interface area were designed and fabricated,where the overlap between SPs and excitons can be en-hanced.The lasing threshold is calculated to be ～6.36 kW/cm2,where the full width at half maximum (FWHM) drops from 27 to 4 nm.And the fast decay time at 502 nm (sharp peak of stimulated lasing) is estimated to be 0.42 ns.Enhanced lasing charac-ters are mainly attributed to the strong confinement of electromagnetic wave in the low refractive index material,which im-prove the near field coupling between SPs and excitons.Such plasmonic laser should be useful in data storage applications,bio-logical application,light communication,especially for optoelectronic devices integrated into a system on a chip.     

Final polishing of Ga-polar GaN substrates using reactive ion etching

Reactive ion etching of {0001} oriented plate-like GaN single crystals has been investigated using SiCl₄:Ar:SF₆ chemistry. The reactive ion etching process is highly chemical. Large anisotropy of the etching rate and of the morphology has been established on (000 ) N-polar and (0001) Ga-polar sides of the GaN crystals, with remarkably higher rate on the N-polar side. Atomic force microscopy measurements have shown smooth surface and good polishing effect obtained on Ga-polar side, while N-polar surface exhibits an increased roughness of a factor of 10 after RIE.     

355nm紫外激光抛光Al2O3陶瓷工艺的研究

紫外激光抛光Al2O3陶瓷可以有效地降低加工中的热影响区、防止微裂纹的产生。为了得到不同激光工艺参量（激光能量密度、扫描速率、扫描间隔）对Al2O3陶瓷抛光表面粗糙度的影响规律,采用单因素实验方法进行了355nm紫外激光抛光Al2O3陶瓷的工艺实验,获得了最优的工艺参量范围。结果表明,当激光能量密度为6J/cm2、扫描间隔为2μm、扫描速率为60mm/s时,抛光后分别获得了较小的表面粗糙度值。这一结果对获得的低粗糙度、高质量的Al2O3陶瓷抛光表面具有指导意义。     

激光抛光技术的发展与展望

介绍激光抛光技术的发展历史,阐明激光抛光的应用现状及未来的发展前景,论述了激光抛光的工艺特点和作用机理,将激光抛光技术与其它抛光技术进行了全面的对比,指出激光抛光的优势及其存在的问题。     

A novel polishing technology for epoxy resin based on 355 nm UV laser

The electromagnetic shielding film has drawn much attention due to its wide applications in the integrated circuit package, which demands a high surface quality of epoxy resin. However, gaseous Cu will splash and adhere to epoxy resin surface when the Cu layer in PCB receives enough energy in the process of laser cutting, which has a negative effect on the quality of the shielding film. Laser polishing technology can solve this problem and it can effectively improve the quality of epoxy resin surface. The paper studies the mechanism of Cu powder spraying on the compound surface by 355 nm ultraviolet (UV) laser, including the parameters of laser polishing process and the remains of Cu content on compound surface. The results show that minimal Cu content can be realized with a scanning speed of 700 mm/s, a laser frequency of 50 kHz and the distance between laser focus and product top surface of -1.3 mm. This result is important to obtain an epoxy resin surface with high quality.