垂直腔半导体光放大器调谐输出特性分析

为了分析垂直腔半导体光放大器的调谐输出特性,考虑到有源腔有效折射率和载流子浓度之间的关系,并结合载流子速率方程,采用建立腔内平均光子数与输入信号光功率之间的关系的研究方法,对垂直腔半导体光放大器的调谐输出特性进行了理论分析和数值仿真.结果表明,在一定的输入光功率和波长条件下,可以观察到双稳现象;双稳环的宽度随着输入光功...     

有源波导环形谐振腔滤波特性分析

将掺铒有源波导材料引入环形谐振腔结构，从理论上分析了有源波导环形谐振腔的滤波特性。结果表明由于抽运光提供的增益补偿了腔内损耗，使得环形谐振腔满足临界耦合条件，实现对信号光的最佳陷波，同时发现通过改变抽运光功率，可以对精细度和带宽进行动态调谐。分析了铒离子掺杂浓度、信号光功率以及抽运光耦合系数对最佳陷波抽运功率的影响，为有源波导器件设计制作提供了理论依据。     

1060nm掺钕磷酸盐波导放大器的特性研究

在四能级钕玻璃波导放大器物理模型的基础上,用重叠积分法研究了以802nm泵浦光放大1060nm信号的掺钕磷酸盐波导放大器的速率-传输方程。通过数值模拟,获得了增益特性和波导掺杂浓度、泵浦功率和波导长度的曲线关系。     

基于QD-SOA交叉增益调制的波长转换研究

量子点半导体光放大器具有比传统半导体光放大器更快的载流子恢复时间,基于QD-SOA交叉增益调制的波长转换技术具有转换速率快,无pattern effects效应的特点.对有源区长度,输入信号光功率和转化后信号的消光比和脉冲展宽进行了研究,对提高基于QD-SOA交叉增益调制波长转换的性能具有指导意义.     

铒镱共掺波导放大器的增益特性

在忽略放大自发辐射(ASE)及均匀掺杂和稳态的情况下,在初始能量转移效率的基础上从速率方程和传输方程出发,推导出了用于分析铒镱共掺波导放大器(EYCDWA)的新公式.利用这些公式分析了泵浦光功率、信号光功率、掺杂浓度、波导长度对放大器增益特性的影响,并与单掺铒波导放大器(EDWA)进行了比较,得到了一些具有实用价值的模拟结果.     

铒镱共掺波导放大器的增益特性

在忽略放大自发辐射(ASE)及均匀掺杂和稳态的情况下,在初始能量转移效率的基础上从速率方程和传输方程出发,推导出了用于分析铒镱共掺波导放大器(EYCDWA)的新公式.利用这些公式分析了泵浦光功率、信号光功率、掺杂浓度、波导长度对放大器增益特性的影响,并与单掺铒波导放大器(EDWA)进行了比较,得到了一些具有实用价值的模拟结果.     

一种新型高增益、低噪声980nm微腔半导体光放大器的数值分析

提出了一种新型微腔半导体光放大器结构,该半导体放大器在普通行波光放大器的波导结构上引入了上下布拉格反射镜,并在波导前后两侧的上端面上分别刻蚀出入射和出射光学窗口,其上蒸镀增透膜层.信号光以一定的倾角斜入射到波导中,以之字型路线沿波导传播.提出了一个完整的、考虑了微腔特性的稳态模型,系统模拟了微腔半导体光放大器的特性.结果表明该微腔半导体光放大器的光纤到光纤增益可达40dB,而噪声指数只有3.5dB.     

线性光放大器中由串扰引起的增益波动研究

针对线性光放大器(LOA)中垂直光场(VCL)的增益钳制作用,建立基于标准速率方程的分段模型。模型考虑了纵向载流子密度变化、放大的自发辐射噪声和端面反射。通过与普通半导体光放大器的比较,验证了VCL对串扰引起的增益波动有很好的钳制作用。模拟计算了不同注入电流下,增益波动的范围和有源区载流子分布,以及泵浦信号强度和调制速率对增益波动的影响。     

垂直腔半导体光放大器频率响应特性研究

从速率方程出发,利用小信号分析方法对垂直腔半导体光放大器(VCSOA)的频率响应特性进行了研究.在考虑了量子阱材料中的增益和载流子浓度之间的对数关系后,得到了VCSOA的峰值响应频率以及3 dB频率响应带宽的解析表达式.结果表明,VCSOA的频率响应特性受抽运光强度、输入光功率以及自发辐射因子的影响.     

基于半导体光放大器交叉增益饱和的波长转换的理论分析

建立了基于半导体光放大器交叉增益饱和的波长转换的理论模型。分别讨论了小信号下波长转换特性和大信号下转换波形的畸变情况。结果表明,半导体光放大器的载流子寿命是导致输出波形畸变的主要因素。     

Longitudinal spatial hole burning and associated nonlinear gain ingain-clamped semiconductor optical amplifiers

The longitudinal spatial hole burning (LSHB) in gain-clamped semiconductor optical amplifiers (GCSOAs) is investigated by means of a numerical model, which is based on position-dependent rate equations for the carrier density and the propagation equations for the optical power. The simulation results show that the carrier densities are nonuniformly distributed within the active layer of GCSOAs. The nonuniformity can be large, especially for high currents and optical signal powers near the saturation. It is found that the LSHB induces a gain nonlinearity, which causes interchannel cross talk when GCSOAs are used in wavelength division multiplexing (WDM) applications. In order to reduce this gain nonlinearity, two methods are analyzed: the use of low resistivity devices and the use of unbalanced Bragg mirror reflectivities     

一种表面等离子体激元定向耦合器的传输特性

利用三维全矢量时域有限差分法(FDTD)数值模拟了一种波导间隔金属条高度小于金属层厚度的表面等离子体激元(SPP)定向耦合器,并分析了其在基模传输时的模式场分布和能流密度分布,讨论了耦合长度、最大转移功率与间隔金属条高度的变化关系。结果表明,波导内沿纵向的能流密度在靠近间隔金属条部分的强度更大,有助于提高波导间耦合效率,并且当减小间隔金属条的高度时可以有效缩短定向耦合器耦合长度。这种亚波长定向耦合器结构可以应用在基于表面等离子体激元的集成光路中。     

非对称结构变幅杆的理论计算与有限元仿真

超声变幅杆是超声振动加工的核心零件。传统超声变幅杆的位移通常沿轴线方向传播，但在某些特殊工况下，需要改变其纵向振动的传播方向。基于此，文中对夹角型超声纵向振动变幅杆进行了理论建模，计算了输出端和输入端均为圆柱体的加夹角型超声变幅杆的谐振频率、放大系数和位移分布等声学特性，最后采用有限元仿真对其进行了验证。研究结果表明，超声变幅杆放大系数显著性影响由大到小为输入端和输出端的半径，长度，夹角；夹角对节点位置与相对位移的影响较为显著。     

High power, diffraction-limited emission from monolithically integrated active grating master oscillator power amplifier (lasers)

A novel monolithically integrated master oscillator power amplifier with a distributed amplifier/grating output coupler is demonstrated which emits 370 mW in a single-frequency diffraction-limited beam without any form of active phase control. The distributed amplifier/grating output coupler results in a guided mode power that saturates along the direction of propagation, providing a uniform carrier density to preserve the flatness of the radiated phase front.<>     

Filamentation and beam propagation in broad-area semiconductorlasers

The spatio-temporal dynamics of broad-area semiconductor lasers is studied theoretically by numerically solving space-dependent coupled partial differential equations for the (complex) optical fields, the interband polarization and the density of charge carriers. The formation and longitudinal propagation of unstable transverse optical filamentary structures is analyzed in a model configuration for typical double-heterostructure broad-area lasers. Spectral and spatial holeburning in the carrier distributions is observed as a consequence of selective density depletion by the transverse laser modes. The transverse holeburning leads to complex spatio-temporal patterns     

Theory and experiments on birefringent optical fibers embedded inconcrete structures

Theoretical and experimental results on birefringent optical fibers embedded in concrete are presented and discussed. We study the effect of strain on the propagation of light in birefringent fibers embedded in a host material loaded under uniform compression. Both longitudinal and transverse deformations are considered in the analysis since the fiber is embedded along a direction perpendicular to the strain load. The effects of the strain on the birefringence of the fiber and the rotation of the optical axis are studied. The theoretical model is used to determine the best polarimetric system configuration to detect strain. Our experimental work was performed by embedding optical fibers in standard concrete cylinders, attaching resistive electric strain gauges on the surface, and testing the specimens under uniform compressive stress. Optical transmission data from the fiber and readings from the electric strain gauges were simultaneously recorded     

Modeling the DBR laser used as wavelength conversion device

In this paper, a novel and efficient way to model the dynamic field in optical DBR-type semiconductor devices is presented. The model accounts for the longitudinal carrier, photon, and refractive index distribution. Furthermore, the model handles both active and passive sections that may include gratings. Thus, simulations of components containing, e.g., gain sections, absorptive sections, phase sections, and gratings, placed arbitrarily along the longitudinal direction of the cavity, are possible. Here, the model has been used for studying the DBR laser as a wavelength converter. Particularly, to improve the performance of the DBT converter, the influence of system and device parameters will be discussed. Calculations show that ultrafast wavelength conversion with rise and fall times less than 50 ps can be obtained. Also, a regenerative effect simultaneous with the wavelength conversion is expected, e.g., improvements in the extinction ratio of the signal of more than 6 dB is predicted for correct design and operation of the component     

A numerical study of erbium doped active LiNbO3waveguides by the beam propagation method

A numerical investigation of active waveguides realized on lithium niobate crystals using erbium as active element is presented. A software package is implemented to simulate the propagation of electromagnetic waves in graded-index active waveguides using an active vectorial beam propagation method (ABPM), which enables to calculate the optical field evolution along the propagation axis. A comparative study of the optical signal gain evolution as function of erbium concentration profiles obtained by various doping methods is presented. The optimal doping method, leading to the maximum gain, is determined     

Analysis of gain and saturation characteristics of a semiconductorlaser optical amplifier using transfer matrices

The transfer matrix method (TMM) has been applied to analyze the gain and saturation characteristics of semiconductor laser optical amplifiers. This method approximates the amplifier cavity by dividing it into M discrete subsections, and TMM has been applied to analyze the stepwise longitudinal field distribution at each subsection along the amplifier cavity. By incorporating also the carrier rate equations into the analysis, it has been shown that the approximation can accurately describe the carrier density and longitudinal field distribution along the amplifier cavity if M is sufficiently large (i.e., the size of each subsection is about an order of magnitude of one wavelength of the input signal). By assuming that the amplifier is biased below oscillation threshold such that the contribution of spontaneous emissions to the gain characteristics can be neglected, we have shown that our proposed method yields a fast and efficient algorithm in analyzing the gain and saturation characteristics of laser amplifiers. We have compared the results produced by our method to those analyzed using the average photon density (AVPD) approximation technique, as well as to experimental results on a 1.5-μm buried heterostructure semiconductor laser amplifier     

Impedance characteristics of double-hetero structure laser diodes

The effects of the onset of lasing on the I-V characteristics, the impedance characteristics and the light modulation characteristics of laser diodes have been discussed by introducing the rate equations which involve carrier diffusion process in the active layer interacting with the radiation field intensity. The static I-V characteristics exhibit a kink at lasing threshold current, reflecting the decrease of effective lifetime of carriers. Effective carrier lifetimes decrease with increasing light intensity, which results in a steep attenuation of injected carrier density in the active region. The impedance and light modulation characteristics are obtained in the small signal approximation. The small signal light modulation characteristics depend strongly on whether the laser diode is excited by the constant current modulation or the constant voltage modulation. The impedance is changed drastically by the onset of lasing and exhibits a resonance which coincides exactly with the optical modulation resonance frequency.