Distributed MEMS analog phase shifter with enhanced tuning

The design, fabrication, and measurement of a tunable microwave phase shifter is described. The phase shifter combines two techniques: a distributed capacitance transmission line phase shifter, and a large tuning range radio frequency (RF) microelectromechanical system (MEMS) capacitor. The resulting device is a large bandwidth, continuously tunable, low-loss phase shifter, with state-of-the-art performance. Measurements indicate analog tuning of 170/spl deg/ phase shift per dB loss is possible at 40 GHz, with a 538/spl deg/ phase shift per centimeter. The structure is realized with high-Q MEMS varactors, capable of tuning C/sub max//C/sub min/= 3.4. To our knowledge, this presents the lowest loss analog millimeter wave phase shifter performance to date.     

A 4-bit CMOS Phase Shifter Using Distributed Active Switches

This paper presents a novel 4-bit phase shifter using distributed active switches in 0.18-mum RF CMOS technology. The relative phase shift, which varies from 0deg to 360deg in steps of 22.5deg, is achieved with a 3-bit distributed phase shifter and a 180deg high-pass/low-pass phase shifter. The distributed phase shifter is implemented using distributed active switches that consist of a periodic placement of series inductors and cascode transistors, thereby obtaining linear phase shift versus frequency with a digital control. The design guideline of the distributed phase shifter is presented. The 4-bit phase shifter achieves 3.5 plusmn 0.5 dB of gain, with an rms phase error of 2.6deg at a center frequency of 12.1 GHz. The input and output return losses are less than -15 dB at all conditions. The chip size is 1880 mum times 915 mum including the probing pads.     

Phase shifter with high phase shifts using defected ground structures

A novel phase shifter with defected ground structures (DGSs) for higher phase shift range is presented. The varactor diodes are mounted on DGSs of termination loads to control the large phase variation of the DGS at resonance. The experimental results of the proposed phase shifter show a 60/spl deg/ increase in maximum phase shift compared with that of a conventional one.     

Development of a millimeter-wave ferrite-filled antisymmetrically biased rectangular waveguide phase shifter embedded in low-temperature cofired ceramic

The theory of a new ferrite-filled rectangular waveguide phase shifter is presented, showing that the device offers more than twice the maximum phase shift of a classical dual-slab ferrite-loaded waveguide phase shifter. The complete analytical field derivation of the new phase shifter is presented. The prototype 36-GHz phase shifter has been completely embedded in an uncharacterized experimental low-temperature cofired ferrite ceramic material, essentially becoming an integral part of a chip package. The fabricated prototype is only 3.5-cm long, 5-mm wide, and 1-mm high. Preliminary measurements of the nonoptimized prototype reveal a controllable, nonreciprocal phase shift of 52.8/spl deg/ at 36 GHz for a bias current of 500 mA, and an insertion loss of approximately 3.6 dB, including transition loss. This paper marks the first time that a ferrite waveguide phase shifter has been realized as a lightweight, compact, and rugged module that can be easily mass produced at low cost. Since it is embedded in a package, the phase shifter can be readily integrated with other active and passive system components that would ideally be contained within the same package.     

高阻硅基铝硅合金弹性膜MEMS相移器

级联式MEMS相移器可通过悬浮于共平面波导之上的微机械可调电容的变化,来改变传输线的特性阻抗和相速,达到相移的目的.文中讨论了MEMS相移器特性对微机械电容和下拉电压的要求,并通过轻质量的铝硅合金弹性膜,获得了较低的下拉电压.测试结果表明,相移器的下拉电压不大于40V,且当控制电压大于10V时,即有明显的相移.该MEMS相移器制备于电阻率大于4000Ω*cm的高阻硅衬底上,获得了较好的传输特性,在整个测试频段1～40GHz,S21均小于3dB,并在25V时获得了大于25°的相移量.     

波片失配及相位误差对旋转场移相器性能的影响

旋转场移相器由两段λ／２波片组成。由于波片之间失配存在反射。本文分析了反射系数、波片相位误差对输出相移、隔离度及损耗的影响。与实验结果吻合。     

2.4 GHz continuously variable ferroelectric phase shifters using all-pass networks

Continuously variable ferroelectric (BST on sapphire) phase shifters based on all-pass networks are presented. An all-pass network phase shifter consists of only lumped LC elements, and thus the total size of the phase shifter is kept to less than 2.2 mm /spl times/ 2.6 mm at 2.4 GHz. The tunability (C/sub max//C/sub min/) of a BST interdigital capacitor is over 2.9 with a bias voltage of 140 V. The phase shifter provides more than 121/spl deg/ phase shift with the maximum insertion loss of 1.8 dB and the worst case return loss of 12.5 dB from 2.4 GHz to 2.5 GHz. By cascading two identical phase shifters, more than 255/spl deg/ phase shift is obtained with the maximum insertion loss of 3.75 dB. The loss figure-of-merit of both the single- and double-section phase shifters is over 65/spl deg//dB from 2.4 GHz to 2.5 GHz.     

RF MEMS phase shifters based on PCB MEMS technology

An X-band main-line type loaded line RF MEMS phase shifter fabricated using printed circuit based MEMS technology is reported. The phase shifter provides a phase shift of 31.6/spl deg/ with a minimum insertion loss of 0.56 dB at 9 GHz for an applied DC bias voltage of 40 V. These phase shifters are suitable for monolithic integration with low-cost phased arrays on Teflon or Polyimide such as low dielectric constant substrates.     

A 45 nm CMOS miniature phase shifter with constant amplitude response

We present analysis, optimization, design and characterization of an integrated passive analog phase shifter at 24 GHz in a commercially available 45 nm RF-CMOS process. The design is based on a well-known RC bridge topology, which was optimized for maximum phase shift and minimal amplitude response variation versus phase and frequency. Phase is controlled by varying DC voltage on a varactor, resulting in 60° maximum phase shift with 0.1 dB amplitude variation at 24 GHz. The size of the phase shifter circuit excluding pads and input/output buffers is 40×50 μm².     

An impedance matched phase shifter using BaSrTiO/sub 3/ thin film

We present a distributed phase shifter with an equal ripple return loss at its operation frequency range. The phase shifter is based on a periodic structure and consists of a coplanar waveguide (CPW) line periodically loaded with voltage-variable barium strontium titanate (BST) interdigitated capacitors. Measurements show that its return loss is better than -15dB at frequencies from direct current to 16GHz, and at 9.4GHz, its phase shift is 41/spl deg/ under 120-V applied bias voltage.     

11.25°毫米波数字移相器的设计

设计了一种Ka波段11.25°数字移相器。采用一前一后加载支线的方式,在Ka波段内研制出11.25°数字移相器。该移相器在30～31GHz工作频带内,驻波比小于1.65,插入损耗小于3dB,固定相移11.25°,相位精度达到±3°。     

Millimeter-Wave Reflective-Type Phase Shifter in CMOS Technology

The design and measurement of a compact, wide-band reflective-type phase shifter in 90 nm CMOS technology in V-band frequency is presented. This phase shifter has a fractional bandwidth of 26% and an average insertion loss of 6 dB over all phase states. The chip area is only 0.08 mm $^{2}$. Measurement results show that the developed phase shifter provides 90$^{circ}$ continuous phase shift over the frequency range of 50–65 GHz. The measured return loss is greater than 12 dB at 50 GHz. The output power is linear up to at least 4 dBm input power.      

背脊波导双环铁氧体移相器

本文导出双环背脊波导锁式铁氧体移相器的传播常数公式。在典型参数下,计算了该器件的差相移和插入损耗。结果表明,该移相器的优值和差相移比同一条件下的矩形波导的同类移相器的大。为了验证文中所给方程的正确性,对差相移作了实验,其结果与计算值基本相符。     

Phase Shifter for a 915 MHz Phased Array Hyperthermia System

This paper describes a design for an analog phase shifter operating at 915 MHz and suitable for use in a phased array microwave hyperthermia system. Here, the major operating constraint was minimization of amplitude variation over a 1800 phase shift, whereas previous phase shifters were designed to obtain a linear relationship between phase and control voltage. The result is a simple, inexpensive hybrid coupler phase shifter that operates over a narrow bandwidth and provides 180°of continuous phase shift with input powers up to 1 W.     

基于载波和边带相位控制的微波光子移相器

为了实现一种360°相移新型微波光子移相器，通过使用一个相位调制器、延迟线和光学滤波器来控制载波和边带的相位，最终控制射频信号的相位。相位调制器只需控制一个电压来调节移相角度，减少了使用复杂双平行马赫-曾德尔调制器所导致的漂移带来的影响，具有结构简单、成本较低等优点。结果表明，仿真验证的微波光子移相器可以在0GHz~40GHz频率范围内实现从0°~360°的全相移范围，并且在同一输出相位情况下，频率在0GHz~40GHz范围内，功率基本保持不变。此研究对微波光子移相器技术有一定参考意义。     

The Absolute Calibration of Periodic Microwave Phase Shifters without a Standard Phase Shifter

An absolute calibration procedure for periodic microwave phase shifters is described. Increments on the phase shifter are compared by substitution with a reproducible phase-shift step of initially unknown value. The periodic nature of the phase shifter provides a reference phase shift of 360/spl deg/, and alternative methods are outlined for the derivation of the correction curve from the step measurements. It is shown that the accuracy of the calibration is governed by the precision and reproducibility of the phase shifter under test.     

A Novel Miniature 1–22 GHz 90° MMIC Phase Shifter with Microstrip Radial Stubs

A novel miniature ultra wide bandwidth 90 monolithic microwave integrated circuit phase shifter with microstrip radial stubs operated from 1 to 22 GHz is presented. The phase shifter exhibits a high performance. Within the whole bandwidth from 1 to 22 GHz, the phase error of the phase shifter is less than 3deg, the return losses of the different phase shift states are more than 14 dB, the insertion loss of all phase shift states are within 3.3plusmn0.5 dB. The chip size of this phase shifter is 1.4 mm times 1.8 mm times 0.1 mm. The proposed phase shifter can be compatible with different polarity control signals without the need of drivers and can also be compatible with either analogue or digital control signals.     

An X-band 22.5°/45° digital phase shifter based on switched filter networks

The design approach and performance of a 22.5°/45°digital phase shifter based on a switched filter network for X-band phased arrays are described. Both the MMIC phase shifters are fabricated employing a 0.25μm gate GaAs pHEMT process and share in the same chip size of 0.82×1.06 mm². The measurement results of the proposed phase shifters over the whole operating frequency range show that the phase shift error is less than 22.5°±2.5°, 45°±3.5°, which shows an excellent agreement with the simulated performance, the insertion loss is within the range of 0.9-1.2 dB for the 22.5°phase shifter and 0.9-1.4 dB for the 45°phase shifter, and the input/output return loss is better than -12.5 and -11 dB respectively. They also achieve the similar P_1dB continuous wave power handing capability of 24.8 dBm at 10 GHz. The phase shifters show a good phase shift error, insertion loss and return loss in the X-band (40%), which can be employed into the wide bandwidth multi-bit digital phase shifter.     

High Average Power S-Band Digital Phase Shifter

A 100-kW-peak Z-kW-average-power liquid-cooled ferrite digital phase shifter has been constructed using beryllia cooling of the ferrite toroid to meet single axis scanned array requirements. The phase-shift cross section external to the ferrite toroids is completely filled with the beryllia. Experiments indicate that the maximum temperature rise in the ferrite is no greater than 45/spl deg/ C. In tests using flux drive to 2 kW, the phase shifter exhibits a maximum phase drift of /spl plusmn/ 6/spl deg/ for 90/spl deg/ differential phase shift. The differential phase shift versus frequency varies less than /spl plusmn/ 0.5/spl deg/ for a 3-percent bandwidth.     

A 500 kW X-Band Air-Cooled Ferrite Latching Switch

The design of a high-power air-cooled microwave SPDT switch which is capable of operation at peak and average power levels of 500 kW and 666 watts, respectively, is described. The unit is of a differential phase shift circulator design employing 90/spl deg/ nonreciprocal phase shift elements which are forced air cooled. The phase shifter design employs dual ferrite toroids, "floating" in reduced height RG-51 waveguide. Two approaches are compared for heat sinking the phase shifter; namely the "H-beam" and the "I-beam" configurations. The results obtained indicate that the I-beam configuration is superior to the "H-beam" configuration. The switch exhibits an insertion loss of 0.6 dB maximum and isolation greater than 20 dB over a 100 MHz bandwidth centered at 9.375 GHz. The input VSWR of the switch over the frequency band is less than 1.28:1.