直流磁控反应溅射制备IrO2薄膜

为研究氧化依（ＩｒＯ_２）对ＰＺＴ铁电薄膜疲劳性能的影响,利用直流（ＤＣ）磁控反应溅射（ｓｐｕｔｔｅｒｉｎｇ）工艺成功地在ＳｉＯ_２／Ｓｉ（１００）衬底上制得了高度取向的ＩｒＯ_２薄膜．并在其上制成ＰＺＴ铁电薄膜．讨论了溅射参数（溅射功率、 Ａｒ／Ｏ_２比、衬底温度）以及退火条件对氧化铱薄膜的结晶、取向和形态的影响．     

磁控反应溅射TaN薄膜的结构和性能

采用磁控溅射仪制备了ＴａＮ薄膜,研究了不同氮分压条件下ＴａＮ薄膜的成份、结构和力学性能。结果表明,氮分压在０．２＊１０＾－１Ｐａ时镀层由两相混合物正方的β－Ｔａ和面心立方结构的δ－ＴａＮ组成。而氮分压在０．４＊１０＾－１－０．８＊１０＾－１Ｐａ时,得到单相六方ＴａＮ结构。     

射频磁控反应溅射制备Al2O3薄膜的工艺研究

采用射频磁控反应溅射法,以高纯Al为靶材,高纯O2为反应气体,在不锈钢和单晶Si基片上成功地制备了氧化铝(Al2O3)薄膜,并对氧化铝薄膜的沉积速率、结构和表面形貌进行了研究.结果表明,沉积速率随着射频功率的增大先几乎呈线性增大而后缓慢增大;随着溅射气压的增加,沉积速率先增大,在一定气压时达到峰值后继续随气压增大而减小,同时随着靶基距的增大而减小;随着氧气流量的不断增加,靶面溅射的物质从金属态过渡到氧化物态,沉积速率也随之不断降低.X射线衍射图谱表明薄膜结构为非晶态;用原子力显微镜对薄膜表面形貌观察,薄膜微结构为柱状.     

直流磁控反应溅射制备IrO2薄膜

为研究氧化铱（ＩｒＯ２）对ＰＺＴ铁电薄膜疲性能的影响。利用直流（ＤＣ）磁控反应溅射（ｓｐｕｔｔｅｒｉｎｇ）工艺成功地在ＳｉＯ２／Ｓｉ（１００）衬底上制得了高度取向的ＩｒＯ２薄膜,并在其上制成ＰＺＴ铁电薄膜,讨论了溅射参数（溅射功率、Ａｒ／Ｏ２比、衬底温度）以及退火条件对氧化铱薄膜的结晶,取向和形态的影响。     

射频磁控共溅射制备超亲水TiO2/SiO2复合薄膜

采用射频磁控共溅射法制备了SiO2/TiO2复合薄膜,通过控制SiO2靶与TiO2靶的溅射时间可调节SiO2与TiO2的比例.所制备的SiO2/TiO2薄膜为锐钛矿结构.实验结果表明:SiO2的掺入降低了SiO2/TiO2复合薄膜的光催化能力,但却提高了薄膜的亲水性的维持时间.其中,掺入6%～13%SiO2的SiO2/TiO2复合薄膜,在紫外光照射30 min,接触角降到2°;停止照射后,在5天内接触角小于6°.     

HfO2薄膜的制备与光学性能

采用射频磁控反应溅射法，以高纯热压HfO2陶瓷为靶材，在Si衬底上成功制备出HfO2薄膜。系统研究了工艺参数对薄膜沉积速率的影响规律，并对薄膜的光学性能进行了研究。结果表明，射频功率对薄膜沉积速率的影响最为明显，O2／Ar流量比和衬底温度对沉积速率的作用不明显，所制备薄膜的折射率较高在近红外波段趋于1．95，在500-1650nm波段范围内薄膜几乎无吸收，透过率较高。     

辅助离子束对中频孪生磁控反应溅射制备氧化钛光学薄膜的影响

本文利用孪生靶50 kHz中频磁控反应溅射的方法,在多孔阳极层离子束源产生的低温离子束辅助条件下制备了光学性能良好的氧化钛薄膜。利用原子力显微镜、分光光度计、椭圆偏振光谱仪研究了离子束功率以及退火温度对氧化钛薄膜形貌、光学折射率和消光系数、孔隙率等的影响。结果表明:利用中频孪生磁控溅射的方法将沉积工艺控制在反应过渡区,可以有效的抑制钛靶中毒和阳极消失,反应溅射过程稳定;辅助离子束提高了等离子体的电荷密度;氧化钛薄膜堆积密度和光学折射率也有所提高,薄膜表面趋于平坦,孔隙率降低。氧化钛薄膜在高温退火处理时由于出现从非晶到多晶转变以及晶体长大与转变,结构逐渐趋于完整,表面粗糙度不断增加;800℃时完全转化为金红石相,晶粒直径约70 nm。     

反应溅射GexC1—x薄膜的沉积速率

系统地研究了射频磁控反应溅射中工艺参数ＧｅｘＣ１－ｘ薄膜沉积率的影响，结果表明，当气体流量比过某值后，沉积速率较大的下降。沉积速率随射频率功率的增大而增大，某工作气压下有沉积速率的最大值，薄膜厚度时间增长规律在出现靶中毒及未出的靶中毒的情况下略有差别。     

用液相沉积法在青铜表面制备TiO2薄膜

采用低温液相沉积法,在青铜表面制备了TiO2薄膜.利用台阶式测厚仪、扫描电镜(SEM)、X光电子能谱(XPS)、X射线衍射(XRD)等测试手段对薄膜的厚度、表面形貌、表面元素的化学状态和晶型进行了表征;并在紫外光照射下,通过甲基橙的降解,评价了沉积薄膜的光催化活性.试验结果表明,37℃下沉积16 h制得的TiO2薄膜表面均匀平整,不经热处理即已部分晶化为锐钛矿相,且具有较好的光催化活性.     

中频交流反应溅射TiO2薄膜的制备及性能研究

利用中频交流磁控溅射设备用金属Ti靶制备出了TiO2薄膜。用椭偏仪测试了TiO2薄膜的厚度和折射率,用俄歇电子能谱、扫描电子显微镜、X射线衍射仪和紫外及可见光分光光度计分别测试了TiO2薄膜的表面成分、表面形貌、晶体结构及其紫外及可见光透射谱,并初步探讨了工艺因素对薄膜性质的影响。实验结果表明：所制备的氧化钛薄膜O／Ti比符合化学计量比,而且O／Ti比随O2流量的变化不大;TiO2薄膜结构主要为锐钛矿型;薄膜表面致密;TiO2薄膜光学性能较好,透射比较高;但O2流量较低时透射比明显下降。     

Copper nitride films deposited by dc reactive magnetron sputtering

Copper nitride (Cu₃N) films were deposited on glass substrates by sputtering of copper target under various substrate temperatures in the range 303–523 K using dc reactive magnetron sputtering. The substrate temperature highly influenced the structural, mechanical, electrical and optical properties of the deposited films. The X-ray diffraction measurements showed that the films were of polycrystalline nature and exhibit preferred orientation of (111) phase of Cu₃N. The microhardness of the films increased from 2.7 to 4.4 GPa with the increase of substrate temperature from 303 to 473 K thereafter decreased to 4.1 GPa at higher temperature of 523 K. The electrical resistivity of the films decreased from 8.7 × 10⁻¹ to 1.1 × 10⁻³ Ωcm and the optical band gap decreased from 1.89 to 1.54 eV with the increase of substrate temperature from 303 to 523 K respectively.     

Characterization of CuAlO2 films prepared by dc reactive magnetron sputtering

Thin films of copper aluminum oxide (CuAlO₂) were prepared on glass substrates by dc magnetron sputtering at a substrate temperature of 523 K under various oxygen partial pressures in the range 1 × 10⁻⁴–3 × 10⁻³ mbar. The dependence of cathode potential on the oxygen partial pressure was explained in terms of oxidation of the sputtering target. The influence of oxygen partial pressure on the structural, electrical and optical properties was systematically studied. p-Type CuAlO₂ films with polycrystalline nature, electrical resistivity of 3.1 Ω cm, Hall mobility of 13.1 cm² V⁻¹ s⁻¹ and optical band gap of 3.54 eV were obtained at an oxygen partial pressure of 6 × 10⁻⁴ mbar.     

Thickness dependent properties of nickel oxide thin films deposited by dc reactive magnetron sputtering

Nickel oxide thin films of various thicknesses were grown on glass substrates by dc reactive magnetron sputtering technique in a pure oxygen atmosphere with sputtering power of 150 W and substrate temperature of 523 K. Crystalline properties of NiO films as a function of film thickness were investigated using X-ray diffraction. XRD analysis revealed that (200) is the preferred orientation and the orientation of the films changed from (200) to (220) at film thickness of 350 nm. The maximum optical transmittance of 60% and band gap of 3.82 eV was observed at the film thickness of 350 nm. The lowest electrical resistivity of 5.1 Ω cm was observed at a film thickness of 350 nm, thereafter resistivity increases with film thickness.     

Influence of oxygen flow rate on photocatalytic TiO2 films deposited by rf magnetron sputtering

Titanium dioxide (TiO₂) thin films having anatase (1 0 1) crystal structure were prepared on non-alkali glass substrates by rf (13.56 MHz) magnetron sputtering using a TiO₂ ceramic target under various oxygen partial pressures. At a fixed substrate temperature of 400 °C and total gas pressure of 1 Pa after 3 h deposition. Effects of oxygen partial pressure on the structural, surface morphology, and photocatalytic activities of the TiO₂ thin films were investigated. We performed both photoinduced decomposition of methylene blue (MB) and photoinduced hydrophilicity under UV light illumination. The XRD patterns exhibited a broad-hump shape indicating the amorphous structure of TiO₂ thin films. The results showed that when the [O₂/(Ar + O₂)] flow rate increased to 50%, the photoinduced decomposition of MB and photoinduced hydrophilicity were enhanced. The water contact angle after 9 min UV illumination was approximately 4.5°, and the methylene blue (MB) solution decomposition from 12 down to 3.34 μ mol/L for 240 min UV irradiation.     

Structural characterization of ZnO thin films deposited by dc magnetron sputtering

In this work we present recent results on ZnO thin films grown by dc magnetron sputtering technique at room temperature (RT), focusing on structural and surface characterization using conventional cross-section transmission electron microscopy (XTEM) and high resolution cross section transmission electron microscopy (HRXTEM) in an attempt to understand the thickness influence on film, mechanical and optical properties as well as photoreduction/oxidation conductivity changes. Films were found to be polycrystalline with a columnar mode of growth. For films with thickness over 100 nm, XTEM and HRTEM analysis evidenced the presence of a small grains transition layer near interface with the substrate, feature which plays an important role in ZnO thin films for gas sensing application. The control of such structural parameters is proved to be critical for the improvement of their gas sensing performance.     

Stress control of a-SiC films deposited by dual source dc magnetron sputtering

In the present paper, we show that a-SiC films deposited from two independent Si and graphite magnetron sputtering sources have small tensile stress of ∼100 MPa without post-deposition annealing. Our sputtering apparatus has a rotation substrate holder that is designed to move to the front of individual targets alternately. In this experimental geometry, the relaxation period, when no deposition is made, must be present during sputtering. The presence of this relaxation period is found to be effective to change the compressive internal stress of deposited films into tensile direction. We have also succeeded to fabricate free-standing a-SiC soft X-ray filter with the thickness of 100-600 nm. The transmission spectra of these filters for soft X-ray beam showed good agreement with calculated ones.     

Structural and surface properties of TiO2 thin films doped with neodymium deposited by reactive magnetron sputtering

Thin films were deposited using modified, high energy magnetron sputtering method from Ti-Nd mosaic targets. The amount of neodymium dopant incorporated into two sets of thin films was estimated to be 0.8 and 8.5 at.%, by means of energy dispersive spectroscopy. On the basis of x-ray diffraction method, the type of crystalline structure and crystallites size were evaluated directly after the deposition process and after additional post-process annealing at 800 °C temperature. The influence of annealing on the surface properties was evaluated with the aid of atomic force microscopy. Uniformity of the dopant distribution in titanium dioxide matrix was examined with the aid of secondary ion mass spectroscopy. Additionally, using atomic force microscope, diversification and roughness of the surface was determined. Chemical bonds energy at the surface of TiO₂:Nd thin films was investigated by x-ray photoelectron spectroscopy method. Wettability measurements were performed to determine contact angles, critical surface tensions and surface free energy of prepared coatings. On the basis of performed investigations it was found, that both factors, the amount of neodymium dopant and the post-process annealing, fundamentally influenced the physicochemical properties of prepared thin films.     

氧分压对TiO2膜结构与光学性质的影响

报道了用反应溅射法制备TiO2 膜的实验研究 .详细研究了膜的沉积、膜结构及其光学性质 ,随溅射氧分压的变化 .随氧分压由 6× 10 - 2 Pa增加到 9× 10 - 2 Pa时 ,晶体结构由金红石变到锐钛矿 ,氧分压超过 9× 10 - 2 Pa时趋向于无定形结构 .与膜结构密切相关的折射率n随氧分压的增大由 2 .4 4变到 1.96 ,禁带宽度Eg 则由大变小 ,然后再增大的变化 (3.4 1→ 3.2 6→3.4 2 ) .     

Thermochromic properties of vanadium oxide films prepared by dc reactive magnetron sputtering

A transparent vanadium oxide film has been one of the most studied electrochromic (EC) and Thermochromic (TC) materials. Vanadium oxide films were deposited at different substrate temperatures up to 400 °C and different ratios of the oxygen partial pressure (P_O2). SEM, AFM and X-ray diffraction's results show detail structure data of the films. IR mode assignments of the films measured by IR reflection-absorbance in NGIA (near grazing incidence angle) are given. It is found that the film has V₂O₅ and VO₂ combined structures. The films exhibit clear changes in transmittance when the environment temperature (T_e) is varied, especially in the 3600-4000 cm^− 1 range. Applying a T_e that is higher than a critical temperature (T_c) to the samples, the as-RT (room temperature) deposited film with 9% P_O2 has a transmittance variation of 30%, but the films that were deposited on a heated substrate of 400 °C have little variation. There is tendency of bigger variation in transmittance for the sample deposited at a larger P_O2, when it is applied by 200 °C T_e.