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射频磁控反应溅射制备Al2O3薄膜的工艺研究 总被引:4,自引:4,他引:4
采用射频磁控反应溅射法,以高纯Al为靶材,高纯O2为反应气体,在不锈钢和单晶Si基片上成功地制备了氧化铝(Al2O3)薄膜,并对氧化铝薄膜的沉积速率、结构和表面形貌进行了研究.结果表明,沉积速率随着射频功率的增大先几乎呈线性增大而后缓慢增大;随着溅射气压的增加,沉积速率先增大,在一定气压时达到峰值后继续随气压增大而减小,同时随着靶基距的增大而减小;随着氧气流量的不断增加,靶面溅射的物质从金属态过渡到氧化物态,沉积速率也随之不断降低.X射线衍射图谱表明薄膜结构为非晶态;用原子力显微镜对薄膜表面形貌观察,薄膜微结构为柱状. 相似文献
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射频磁控共溅射制备超亲水TiO2/SiO2复合薄膜 总被引:2,自引:0,他引:2
采用射频磁控共溅射法制备了SiO2/TiO2复合薄膜,通过控制SiO2靶与TiO2靶的溅射时间可调节SiO2与TiO2的比例.所制备的SiO2/TiO2薄膜为锐钛矿结构.实验结果表明:SiO2的掺入降低了SiO2/TiO2复合薄膜的光催化能力,但却提高了薄膜的亲水性的维持时间.其中,掺入6%~13%SiO2的SiO2/TiO2复合薄膜,在紫外光照射30 min,接触角降到2°;停止照射后,在5天内接触角小于6°. 相似文献
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本文利用孪生靶50 kHz中频磁控反应溅射的方法,在多孔阳极层离子束源产生的低温离子束辅助条件下制备了光学性能良好的氧化钛薄膜。利用原子力显微镜、分光光度计、椭圆偏振光谱仪研究了离子束功率以及退火温度对氧化钛薄膜形貌、光学折射率和消光系数、孔隙率等的影响。结果表明:利用中频孪生磁控溅射的方法将沉积工艺控制在反应过渡区,可以有效的抑制钛靶中毒和阳极消失,反应溅射过程稳定;辅助离子束提高了等离子体的电荷密度;氧化钛薄膜堆积密度和光学折射率也有所提高,薄膜表面趋于平坦,孔隙率降低。氧化钛薄膜在高温退火处理时由于出现从非晶到多晶转变以及晶体长大与转变,结构逐渐趋于完整,表面粗糙度不断增加;800℃时完全转化为金红石相,晶粒直径约70 nm。 相似文献
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反应溅射GexC1—x薄膜的沉积速率 总被引:1,自引:1,他引:0
系统地研究了射频磁控反应溅射中工艺参数GexC1-x薄膜沉积率的影响,结果表明,当气体流量比过某值后,沉积速率较大的下降。沉积速率随射频率功率的增大而增大,某工作气压下有沉积速率的最大值,薄膜厚度时间增长规律在出现靶中毒及未出的靶中毒的情况下略有差别。 相似文献
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中频交流反应溅射TiO2薄膜的制备及性能研究 总被引:5,自引:0,他引:5
利用中频交流磁控溅射设备用金属Ti靶制备出了TiO2薄膜。用椭偏仪测试了TiO2薄膜的厚度和折射率,用俄歇电子能谱、扫描电子显微镜、X射线衍射仪和紫外及可见光分光光度计分别测试了TiO2薄膜的表面成分、表面形貌、晶体结构及其紫外及可见光透射谱,并初步探讨了工艺因素对薄膜性质的影响。实验结果表明:所制备的氧化钛薄膜O/Ti比符合化学计量比,而且O/Ti比随O2流量的变化不大;TiO2薄膜结构主要为锐钛矿型;薄膜表面致密;TiO2薄膜光学性能较好,透射比较高;但O2流量较低时透射比明显下降。 相似文献
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K. Venkata Subba Reddy A. Sivasankar Reddy P. Sreedhara Reddy S. Uthanna 《Journal of Materials Science: Materials in Electronics》2007,18(10):1003-1008
Copper nitride (Cu3N) films were deposited on glass substrates by sputtering of copper target under various substrate temperatures in the range
303–523 K using dc reactive magnetron sputtering. The substrate temperature highly influenced the structural, mechanical,
electrical and optical properties of the deposited films. The X-ray diffraction measurements showed that the films were of
polycrystalline nature and exhibit preferred orientation of (111) phase of Cu3N. The microhardness of the films increased from 2.7 to 4.4 GPa with the increase of substrate temperature from 303 to 473 K
thereafter decreased to 4.1 GPa at higher temperature of 523 K. The electrical resistivity of the films decreased from 8.7 × 10−1 to 1.1 × 10−3 Ωcm and the optical band gap decreased from 1.89 to 1.54 eV with the increase of substrate temperature from 303 to 523 K
respectively. 相似文献
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A. Sivasankar Reddy P. Sreedhara Reddy S. Uthanna G. Mohan Rao 《Journal of Materials Science: Materials in Electronics》2006,17(8):615-620
Thin films of copper aluminum oxide (CuAlO2) were prepared on glass substrates by dc magnetron sputtering at a substrate temperature of 523 K under various oxygen partial
pressures in the range 1 × 10−4–3 × 10−3 mbar. The dependence of cathode potential on the oxygen partial pressure was explained in terms of oxidation of the sputtering
target. The influence of oxygen partial pressure on the structural, electrical and optical properties was systematically studied.
p-Type CuAlO2 films with polycrystalline nature, electrical resistivity of 3.1 Ω cm, Hall mobility of 13.1 cm2 V−1 s−1 and optical band gap of 3.54 eV were obtained at an oxygen partial pressure of 6 × 10−4 mbar. 相似文献
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Nickel oxide thin films of various thicknesses were grown on glass substrates by dc reactive magnetron sputtering technique in a pure oxygen atmosphere with sputtering power of 150 W and substrate temperature of 523 K. Crystalline properties of NiO films as a function of film thickness were investigated using X-ray diffraction. XRD analysis revealed that (200) is the preferred orientation and the orientation of the films changed from (200) to (220) at film thickness of 350 nm. The maximum optical transmittance of 60% and band gap of 3.82 eV was observed at the film thickness of 350 nm. The lowest electrical resistivity of 5.1 Ω cm was observed at a film thickness of 350 nm, thereafter resistivity increases with film thickness. 相似文献
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A. H. Chiou C. G. Kuo C. H. Huang W. F. Wu C. P. Chou C. Y. Hsu 《Journal of Materials Science: Materials in Electronics》2012,23(2):589-594
Titanium dioxide (TiO2) thin films having anatase (1 0 1) crystal structure were prepared on non-alkali glass substrates by rf (13.56 MHz) magnetron
sputtering using a TiO2 ceramic target under various oxygen partial pressures. At a fixed substrate temperature of 400 °C and total gas pressure
of 1 Pa after 3 h deposition. Effects of oxygen partial pressure on the structural, surface morphology, and photocatalytic
activities of the TiO2 thin films were investigated. We performed both photoinduced decomposition of methylene blue (MB) and photoinduced hydrophilicity
under UV light illumination. The XRD patterns exhibited a broad-hump shape indicating the amorphous structure of TiO2 thin films. The results showed that when the [O2/(Ar + O2)] flow rate increased to 50%, the photoinduced decomposition of MB and photoinduced hydrophilicity were enhanced. The water
contact angle after 9 min UV illumination was approximately 4.5°, and the methylene blue (MB) solution decomposition from
12 down to 3.34 μ mol/L for 240 min UV irradiation. 相似文献
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G. Kiriakidis M. Suchea S. Christoulakis P. Horvath J. Stoemenos 《Thin solid films》2007,515(24):8577-8581
In this work we present recent results on ZnO thin films grown by dc magnetron sputtering technique at room temperature (RT), focusing on structural and surface characterization using conventional cross-section transmission electron microscopy (XTEM) and high resolution cross section transmission electron microscopy (HRXTEM) in an attempt to understand the thickness influence on film, mechanical and optical properties as well as photoreduction/oxidation conductivity changes. Films were found to be polycrystalline with a columnar mode of growth. For films with thickness over 100 nm, XTEM and HRTEM analysis evidenced the presence of a small grains transition layer near interface with the substrate, feature which plays an important role in ZnO thin films for gas sensing application. The control of such structural parameters is proved to be critical for the improvement of their gas sensing performance. 相似文献
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In the present paper, we show that a-SiC films deposited from two independent Si and graphite magnetron sputtering sources have small tensile stress of ∼100 MPa without post-deposition annealing. Our sputtering apparatus has a rotation substrate holder that is designed to move to the front of individual targets alternately. In this experimental geometry, the relaxation period, when no deposition is made, must be present during sputtering. The presence of this relaxation period is found to be effective to change the compressive internal stress of deposited films into tensile direction. We have also succeeded to fabricate free-standing a-SiC soft X-ray filter with the thickness of 100-600 nm. The transmission spectra of these filters for soft X-ray beam showed good agreement with calculated ones. 相似文献
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Michał Mazur Danuta Kaczmarek Jarosław Domaradzki Damian Wojcieszak Piotr Mazur Eugeniusz Prociow 《Materials Science-Poland》2013,31(1):71-79
Thin films were deposited using modified, high energy magnetron sputtering method from Ti-Nd mosaic targets. The amount of neodymium dopant incorporated into two sets of thin films was estimated to be 0.8 and 8.5 at.%, by means of energy dispersive spectroscopy. On the basis of x-ray diffraction method, the type of crystalline structure and crystallites size were evaluated directly after the deposition process and after additional post-process annealing at 800 °C temperature. The influence of annealing on the surface properties was evaluated with the aid of atomic force microscopy. Uniformity of the dopant distribution in titanium dioxide matrix was examined with the aid of secondary ion mass spectroscopy. Additionally, using atomic force microscope, diversification and roughness of the surface was determined. Chemical bonds energy at the surface of TiO2:Nd thin films was investigated by x-ray photoelectron spectroscopy method. Wettability measurements were performed to determine contact angles, critical surface tensions and surface free energy of prepared coatings. On the basis of performed investigations it was found, that both factors, the amount of neodymium dopant and the post-process annealing, fundamentally influenced the physicochemical properties of prepared thin films. 相似文献
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氧分压对TiO2膜结构与光学性质的影响 总被引:5,自引:0,他引:5
报道了用反应溅射法制备TiO2 膜的实验研究 .详细研究了膜的沉积、膜结构及其光学性质 ,随溅射氧分压的变化 .随氧分压由 6× 10 - 2 Pa增加到 9× 10 - 2 Pa时 ,晶体结构由金红石变到锐钛矿 ,氧分压超过 9× 10 - 2 Pa时趋向于无定形结构 .与膜结构密切相关的折射率n随氧分压的增大由 2 .4 4变到 1.96 ,禁带宽度Eg 则由大变小 ,然后再增大的变化 (3.4 1→ 3.2 6→3.4 2 ) . 相似文献
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A transparent vanadium oxide film has been one of the most studied electrochromic (EC) and Thermochromic (TC) materials. Vanadium oxide films were deposited at different substrate temperatures up to 400 °C and different ratios of the oxygen partial pressure (PO2). SEM, AFM and X-ray diffraction's results show detail structure data of the films. IR mode assignments of the films measured by IR reflection-absorbance in NGIA (near grazing incidence angle) are given. It is found that the film has V2O5 and VO2 combined structures. The films exhibit clear changes in transmittance when the environment temperature (Te) is varied, especially in the 3600-4000 cm− 1 range. Applying a Te that is higher than a critical temperature (Tc) to the samples, the as-RT (room temperature) deposited film with 9% PO2 has a transmittance variation of 30%, but the films that were deposited on a heated substrate of 400 °C have little variation. There is tendency of bigger variation in transmittance for the sample deposited at a larger PO2, when it is applied by 200 °C Te. 相似文献