RTD/HPT光控单-双稳转换逻辑单元

以光接收器件代替RTD MOBILE(RTD单-双稳转换逻辑单元)电路中的HEMT或HBT,可构成光控MOBILE电路。在比较了四种光控MOBILE结构的基础上,选择RTD/HPT光控结构,重点分析讨论了RTD/HPT光控MOBILE的工作原理,当光控MOBILE的输入光功率超过一个临界值时,MOBILE的输出电压便会从高电平跳变到低电平;由HPT光增益理论分析了提高HPT性能的措施以及HPT设计中应该注意的问题;介绍了以Si光三极管代替HPT,通过模拟实验,验证了RTD/HPT光控MOBILE的逻辑功能。     

光控单稳-双稳转换逻辑单元

用光电晶体管替换HEMT作为输入端,结合RTD可以构成新的光控逻辑单元,它具有光电流开关和自锁功能,该功能在实验及电路模拟中得到证实.在此基础上,若以异质结光电管(HPT)和RTD集成,可以设计和制作诸如D型触发器等不同功能的光控逻辑电路单元.     

光控单稳-双稳转换逻辑单元(英文)

用光电晶体管替换HEMT作为输入端,结合RTD可以构成新的光控逻辑单元,它具有光电流开关和自锁功能,该功能在实验及电路模拟中得到证实.在此基础上,若以异质结光电管(HPT)和RTD集成,可以设计和制作诸如D型触发器等不同功能的光控逻辑电路单元.     

由RTD构成的MOBILE单元电路研究

对由共振隧穿二极管(RTD)构成的单双稳态转换逻辑单元(MOBILE)电路进行了详细地研究与分析,并结合实际RTD的特性用PSPICE进行了MOBILE单元电路模拟,总结和验证了MOBILE单元电路变化的三条规律,为进一步研究由RTD构成的多种复杂数字电路奠定了基础。     

光控单稳-双稳转换逻辑单元

用光电晶体管替换HEMT作为输入端,结合RTD可以构成新的光控逻辑单元,它具有光电流开关和自锁功能,该功能在实验及电路模拟中得到证实.在此基础上,若以异质结光电管(HPT)和RTD集成,可以设计和制作诸如D型触发器等不同功能的光控逻辑电路单元.     

一种基于RTD和HEMT的单片集成逻辑电路

介绍了一种基于共振隧穿二极管(RTD)和高电子迁移率晶体管(HEMT)的单片集成电路.采用分子束外延技术在GaAs底层上重叠生长了RTD和HEMT结构.RTD室温下的峰谷电流比为5.2∶1,峰值电流密度为22.5kA/cm2.HEMT采用1μm栅长,阈值电压为-1V.设计电路称为单稳态-双稳态转换逻辑单元(MOBILE).实验结果显示了该电路逻辑运行成功,运行频率可达2GHz以上.     

一种基于RTD和HEMT的单片集成逻辑电路

介绍了一种基于共振隧穿二极管(RTD)和高电子迁移率晶体管(HEMT)的单片集成电路.采用分子束外延技术在GaAs底层上重叠生长了RTD和HEMT结构.RTD室温下的峰谷电流比为5.2∶1,峰值电流密度为22.5kA/cm2.HEMT采用1μm栅长,阈值电压为-1V.设计电路称为单稳态-双稳态转换逻辑单元(MOBILE).实验结果显示了该电路逻辑运行成功,运行频率可达2GHz以上.     

基于共振隧穿二极管的集成电路研究

RTD基集成电路所具有的超高速、低功耗和自锁存的特性,使其在数字电路、混合信号电路以及光电子系统中有着重要的应用。首先对RTD与化合物半导体HEMT,HBT以及硅CMOS器件的集成工艺进行了介绍。在MOBILE电路及其改进和延伸的基础上,对高速ADC／DAC电路和低功耗的存储器电路进行了具体的分析。最后对RTD基电路面临的主要问题和挑战进行了讨论,提出基于硅基RTD与线性阈值门（LTG）逻辑相结合是未来纳米级超大规模集成电路的最佳发展方向。     

波分复用光控相控阵雷达的控制技术

为了设计波分复用光控相控阵雷达的完整结构,提出基于光开关控制的光控相控阵雷达发射与接收前端的基本组成,描述光控相控阵雷达的工作原理。介绍光开关控制的波分复用光延时网络结构,设计并分析光控相控阵雷达工作的开关控制流程。测试光开关的性能,分析其对光控相控阵雷达时序设计的影响。制作开关控制的三级光纤真时延迟线结构,实现并验证8个扫描角度的可编程波束成形延迟网络。开关控制光延时网络的实现,证明了基于光开关控制的相控阵雷达工作的有效性和可行性     

基于双基区晶体管结构的光控振荡器

采用DUBAT(双基区晶体管)和光电二极管构成新型无电感光控振荡器,并对其等效电路进行了模拟,分析了工作原理.实验数据证明了该光控振荡器频率与光强成正比,可实现光的模数转化.由于DUBAT结构简单,与集成电路工艺兼容,成本低廉,为光控振荡器与功能电路的集成应用提供了新的实现方式.     

引入了流体动力学模型的单载流子光探测器的优化

本文中,通过引入了流体动力学模型对单载流子光探测器的特性进行了模拟,并对模拟结果做了分析和研究。在此基础上,提出了改进器件的方法,进而得到了一个优化的器件,优化后的器件将带宽提高到了原器件的两倍。     

Structure optimization of a uni-traveling-carrier photodiode with introduction of a hydro-dynamic model

Characteristies of a uni-traveling-carrier photodiode(UTC-PD)are investigated.A hydro-dynamic model is introduced which takes into account the electrons'velocity overshoot in the depletion region.which is a more accurate high speed device than using the nodal drift-diffuse model.Based on previOUS results,two modified UTC-PDs are presented,and an optimized device is obtained,the bandwidth of which is more than twice that of the original.     

考虑速度过冲的单载流子光探测器特性

通过在器件模拟中引入考虑了速度过冲效应的水动力学模型,对单载流子光探测器(UTC-PD)的传统漂移扩散模型进行了改进.结果表明,电子的速度过冲有效地减小了空间电荷效应,从而提高了器件的带宽.同时,通过对器件的直流和交流特性分析,研究了吸收层和收集层参数对器件性能的影响.     

Low-power static frequency divider using an InP-based monolithic RTD/HBT technology

A low-power static frequency divider using an RTD/HBT MOnostable-BIstable transition Logic Element (MOBILE) scheme is proposed for the first time and operation of the circuit is demonstrated up to 20 GHz. The divided-by-two static frequency divider has been successfully implemented in an InP-based monolithic RTD/HBT IC technology. The number of devices used in the static frequency divider has been significantly reduced by using the proposed MOBILE scheme. The fabricated frequency divider operates at a clock frequency up to 20 GHz and dissipates d.c. power of 51 mW at a power supply of 3.3 V     

Optimization of the UTC-PD Epitaxy for Photomixing at 340 GHz

We present a method to optimize the epitaxial layer structure of an InGaAs/InP uni-traveling-carrier photo-diode (UTC-PD) for continuous THz-wave generation. The design approach used is general in that it can be applied for any target frequency while this study focuses on 340 GHz. The photodiode epitaxy is modeled and optimized using a TCAD software implementing the hydrodynamic semiconductor equations. This physical device model was found to be in good agreement with reported experimental results. It is shown that the UTC-PD can generate ~1 mW at 340 GHz by choosing the optimum absorption layer and collection layer thicknesses.     

Logic circuit design using monostable-bistable transition logic element based on standard BiCMOS process

We present a monostable-bistable transition logic element (MOBILE) based on the negative-differential-resistance (NDR) circuit. In particular, this circuit can be completely implemented using the standard BiCMOS process. A traditional MOBILE using two resonant tunneling diodes (RTD) connected in series is a functional logic circuit. The fabrication of RTD is utilized in the complicated molecular-beam-epitaxy (MBE) system. However, we present a MOBILE circuit that is completely made of standard Si-based metal-oxide-semiconductor field effect transistors and SiGe-based heterojunction bipolar transistors. By suitably determining the control voltages and input conditions, we can obtain the operation of the inverter, AND and OR logic gates. We also demonstrate the latch characteristic of this MOBILE circuit. This logic circuit is fabricated using the standard 0.35 μm BiCMOS process without the need for the MBE system.     

Monolithic integration of resonant tunneling diodes and FET's formonostable-bistable transition logic elements (MOBILE's)

A MOBILE (monostable-bistable transition logic element), employing two n-type negative differential resistance devices connected in series, is a functional logic gate with the advantages of multiple inputs and multiple functions. In this paper, a novel approach to achieve MOBILE operation is demonstrated using monolithic integration of resonant tunneling diodes (RTD) and FETs. In our new integration structure, an RTD and FET are connected in parallel. This structure offers several advantages including separate optimization of RTD's and FET's, and flexible circuit design abilities. For a single-input MOBILE gate, inverter operation at room temperature is demonstrated as the evidence of monostable-to-bistable transition     

NDRHBT及其构成的单-双稳转换逻辑单元

设计并研制了InGaP/GaAs/InGaP超薄基区(8nm)负阻异质结晶体管(UTBNDRHBT)。并用它构成一个单-双稳转换逻辑单元(Monostable-bistable transition logic element,简称MOBILE)。经过测试,证实其具有与GRTD、RTD/HEMT构成的MOBILE相类似的逻辑功能。