Al/W/TiNx/TiSiy/Si barrier technology for1.0-μm contacts

A reliable contact diffusion barrier has been successfully formed by sintering in nitrogen a physically sputtered W/Ti bilayer. After a 650°C furnace anneal, a TiN_x/TiSi_y layer on contact with the silicon substrate was formed beneath the overlying W. No reaction between N₂ and W was observed. Arsenic implanted in the silicon substrate tended to retard the silicidation of titanium. Substantial redistribution of both B and As across the silicide layer was also observed during the contact sintering process. The 1.0-μ contacts fabricated with the Al/W/TiN_x/TiSi_y/Si barrier technology exhibited low and tightly distributed contact resistivities (less than 10^-6 Ω-cm²). No excessive leakage of the shallow junctions was observed even after thermally stressing the sample at 400°C for 8 h     

Role of titanium in Ti/Ni ohmic contact on n-type 6H-SiC

A set of Ti/Ni metallizations with different thickness of the underlying titanium layer was prepared on 6H-SiC together with structures that contained only pure Ti and Ni. Samples were gradually annealed at 750-1150 °C. Structures Ti(2)/Ni(50) and Ti(100)/Ni(50) showed the lowest contact resistivity, 2 × 10⁻⁴ Ω cm² in both cases. For the Ti(2)/Ni(50) structure, low contact resistivity was reached most likely due to reduction of surface oxides on SiC by the thin titanium layer. In the Ti(100)/Ni(50) structure, the titanium layer prevents diffusion of nickel towards SiC and there is a layer containing mainly TiC at the interface with silicon carbide.     

Titanium, vanadium, and nickel impurities in 3C-SiC: Electronic structure and lattice relaxation effects

Variations of chemical bonding and lattice relaxation in cubic silicon carbide in the presence of 3d-series impurity atoms (M=Ti, V, and Ni) were studied within the total-potential version of the method of linear muffin-tin orbitals. Substitution of the silicon atom with M causes a displacement of the closest carbon atoms outward from the impurity atom; the greatest effect is observed for the Ti atom. The conducting properties in doped compounds vary from semiconductor for the titanium atom (electron conduction) and nickel (hole conduction) to metallic in the case of vanadium. Features of chemical bonding were analyzed on the basis of the cohesion energy and charge densities.     

A study on the correlation between electrochemical corrosion and chemical mechanical polishing performance of W and Ti film

In this paper, in order to investigate the electrochemical polishing behavior of the tungsten (W) and titanium (Ti) film, the chemical mechanical polishing (CMP) performances of W and Ti film according to the oxidizer contents were studied through electrochemical corrosion analysis. The alumina (Al₂O₃)-based tungsten slurry with H₂O₂ oxidizer was used for CMP test. As an experimental result, for the case of 5 vol% oxidizer added, the removal rates were improved and a good polishing selectivity of 1.4 : 1 was obtained. It means that the oxidizer with the highest removal rate (RR) has a high dissolution rate due to the predominant electrochemical corrosion effects. Therefore we conclude that the W and Ti-CMP characteristics are strongly dependent on the amounts of H₂O₂ oxidizer additive.     

Oxidation of titanium disilicide on polycrystalline silicon

Oxidation mechanisms of titanium disilicide on polycrystalline silicon was investigated. Poly-Si was deposited on the oxidized Si wafer by CVD method, Ti was then deposited on the poly-Si by the electron beam gun and thus TiSi₂ was formed by thermal annealing in vacuum. During the wet oxidation, Rutherford backscattering spectroscopy (RBS) results show a two-step oxidation process, namely, TiSi₂ first dissociates and forms TiO_x and SiO₂, while after the formation of TiO_x reaches the saturation level, the poly-Si rapidly diffuses through the TiSi₂ to form SiO₂. The calculated activation energy of reaction is 2.06 eV, and that of diffusion is 1.51 eV. Sheet resistances were measured and found to be consistent with the two-step oxidation model. Radioactive³¹Si was used as a marker to study the kinetics of the oxidation and found that during the diffusion process of oxidation, the poly-Si atoms transported through TiSi₂ by grain boundary and/or interstitial diffusion. Department of Physics.     

Silicon carbide pinch rectifiers using a dual-metal Ti-Ni/sub 2/Si Schottky barrier

The electrical characterization of dual-metal-planar Schottky diodes on silicon carbide is reported. The devices were fabricated on both 6H- and 4H-SiC by using titanium (Ti) and nickel silicide (Ni/sub 2/Si) as Schottky metals. These rectifiers yielded the same forward voltage drop as the Ti diodes and leakage current densities comparable to those of the Ni/sub 2/Si diodes. The reduction of the reverse leakage current density, with respect to that of the Ti diodes, was about three orders of magnitude in 6H and about a factor of 30 in 4H-SiC. All that results in a consistent reduction of the device power dissipation. Electrical characterization of the devices at different temperatures provided insight into the carrier transport mechanism. In particular, the electrical behavior of the system was explained by an "inhomogeneous" Schottky barrier model, in which the low Ti barrier determines the current flow under forward bias, whereas the high Ni/sub 2/Si barrier dominates the reverse bias conduction by the pinchoff of the low barrier Ti regions.     

Dual-metal gate CMOS technology with ultrathin silicon nitride gatedielectric

We report the first demonstration of a dual-metal gate complementary metal oxide semiconductor (CMOS) technology using titanium (Ti) and molybdenum (Mo) as the gate electrodes for the N-metal oxide semiconductor field effect transistors (N-MOSFETs) and P-metal oxide semiconductor field effect transistors (P-MOSFETs), respectively. The gate dielectric stack consists of a silicon oxy-nitride interfacial layer and a silicon nitride (Si₃N₄) dielectric layer formed by a rapid-thermal chemical vapor deposition (RTCVD) process. C-V characteristics show negligible gate depletion. Carrier mobilities comparable to that predicted by the universal mobility model for silicon dioxide (SiO₂) are observed     

Structural and electrical investigation of BLT films deposited at different times using electron beam evaporation technique

Thin films Bi4Ti3O12 (BLT) were deposited using electron beam evaporation on silicon substrate at several times, also on AlN/Si and SiO2/Si substrates. Thin films morphology and thickness were measured via scanning electron microscopy (SEM). The crystallography was studied using X-ray diffraction (XRD) technique for films which have a (0010) preferred orientation in all substrate types. The capacitance values were contingent on frequency value in C-V measurement. The ferroelectric characterization was investigated for BLT film deposited on isolator layer (SiO2 or AlN) for Al/Bi4Ti3O12/SiO2/Si devices. Memory effect value varied from 1 V to 3 V depending on the thin films isolator on substrate.     

纳秒激光诱导氧化钛片及涂层的润湿性研究

采用纳秒激光在纯钛片表面制备微织构,并辅助化学处理的方法,获得了类似"荷叶效应"且润湿稳定的超疏水表面。通过调整激光加工工艺参数,获得了具有不同润湿性的微纳米结构;在此基础上,采用全氟癸基三甲氧基硅烷和乙醇溶液的混合溶液在微结构表面制备涂层。采用扫描电子显微镜和能谱分析后可知钛板在激光作用下产生了多尺度的氧化钛多孔微结构;通过接触角测量表征进一步分析了钛片表面的亲水性与微纳米结构表面变化规律的关系,以及涂层对表面润湿性的影响,为生物医学药物输送方面的研究提供了参考。     

Layered and Homogeneous Films of Aluminum and Aluminum/Silicon with Titanium and Tungsten for Multilevel Interconnects

Layered structures and homogeneous alloy films synthesized by sputter deposition were investigated for use in a VLSI multilevel interconnect technology. Major areas studied include hillock formation, resistivity before and after annealing, film composition and structure, reproducibility, interlevel shorts, and dry etching. It has been demonstrated in this work that aluminum alloyed with silicon and titanium and layered with titanium offers advantages over current technological materials for interconnections in integrated circuits. Measurements of surface roughness and electrical shorts between two levels of metal showed that the hillock densities in the films are significantly reduced when small amounts (one to three atomic percent) of titanium and silicon are present. The resistivity of such homogeneous films, however, is 4.5 to 5.5 /spl mu//spl Omega//spl dot/cm, which is higher than standard metallization alloys. When Al/Si was layered with Ti, no hillocks were observed and the resistivity of the composite films was comparable to standard metallization alloys.     

Novel multilayered Ti/TiN diffusion barrier for Al metallization

A novel, multilayered Ti/TiN diffusion barrier is proposed and successfully applied for Al metallization. The multilayered Ti/TiN structure is effective in enhancing the barrier properties since the very thin Ti layer inserted into titanium nitride (TiN) barrier can cause disruption of the TiN columnar growth and reduction of open grain boundaries resulting in retarded interdiffusion between metal and silicon. Multilayered Ti/TiN films are deposited sequentially by sputtering without breaking vacuum. It is found that TiN grain boundaries are discontinuous when a Ti layer is inserted into TiN. Multilayered Ti/TiN has a better barrier performance than single-layer TiN in Al metallization. However, the barrier performance is related to the number and thickness of the inserted Ti layers, because increasing titanium will enhance chemical reactions between Al and barrier layers, and produce more titanium-aluminum compounds. The total thickness of introduced Ti layers should be reduced to improve barrier performance.     

在大气气氛下应用激光和等离子体混合方法制备氮化钛

在大气气氛下,采用连续CO2激光和氮等离子体混合法(LPN)对工业纯钛样品表面进行处理,获得了氮化钛膜层。用扫描电镜(SEM),X射线衍射(XRD)对样品的形貌和结构进行了表征,结果表明在合适的条件下可以获得满意的氮化效果。在激光功率密度2.0×105~1.0×106W/cm2,扫描速度200~1000 mm/min的区间内,激光功率密度越高,扫描速度越低,氮化效果越好。工业纯钛样品的氮化深度最佳可达80μm。在有效氮化区域内,氮含量随深度变化迅速,而在过渡区域内,氮含量变化缓慢。     

Enhancement of effective barrier height in Ti-silicon Schottky diode using low-energy ion implantation

Increasing the effective barrier height in a Ti-p-type silicon Schottky diode has been achieved by means of low-energy ion implantation to introduce a thin inversion layer on silicon substrate. It is shown theoretically that effective barrier height equal to the energy bandgap can be obtained in such structure if the thickness and dopant density of the implanted layer are properly chosen. Experimental results for several titanium (Ti) on phosphorus implanted p-type silicon Schottky diodes show that effective barrier heights were increased from 0.6 eV for the Ti-p Si Schottky diode to 0.96 eV for a Ti-n-p-Si Schottky diode with a phosphorus-implanted layer thickness of 400 Å and dose of 1.26 × 10¹²cm^-2. Good agreement is obtained between the calculated and the measured barrier height for several Ti-n-p silicon Schottky diodes.     

Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects

Layered structures and homogeneous alloy films synthesized by sputter deposition were investigated for use in a VLSI multilevel interconnect technology. Major areas studied include hillock formation, resistivity before and after annealing, film composition and structure, reproducibility, interlevel shorts, and dry etching. It has been demonstrated in this work that aluminum alloyed with silicon and titanium and layered with titanium offers advantages over current technological materials for interconnections in integrated circuits. Measurements of surface roughness and electrical shorts between two levels of metal showed that the hillock densities in the films are significantly reduced when small amounts (one to three atomic percent) of titanium and silicon are present. The resistivity of such homogeneous films, however, is 4.5 to 5.5 µΩ.cm, which is higher than standard metallization alloys. When Al/Si was layered with Ti, no hillocks were observed and the resistivity of the composite films was comparable to standard metallization alloys.     

Photoelectrocatalytic degradation of p-hydroxybenzoic acid at the surface of a titanium/titanium dioxide nanotube array electrode using electrochemical monitoring

In this study, the titanium/titanium dioxide nanotube array (Ti/TiO₂-NTA) electrode was prepared with anodic oxidation of Ti foil electrode. The morphology of Ti/TiO₂-NTA electrode was evaluated with scanning electron microscopy images. The results showed that the inner diameter of nanotubes is below of 100 nm. The electrochemical behavior of the as-prepared Ti/TiO₂-NTA electrode was studied using the cyclic voltammetry. In addition, a significant photoelectrochemical behavior of the p-hydroxybenzoic acid (p-HBA) was observed on the Ti/TiO₂ electrode using the hydrodynamic photoamperometry experiments. Then, the photoelectrocatalytic (PEC) degradation of the p-HBA was performed by this electrode, and compared with photocatalytic (PC), electrooxidation (EC), and direct photolysis by ultra-violet ray. It was found from mechanistic studies that the rate constant for the PEC process of Ti/TiO₂-NTA electrode was higher than other degradation processes. The p-HBA concentration monitoring was carried out with the differential pulse voltammetry. Finally, the effects of the solution pH, applied potential, and the p-HBA concentration on the degradation efficiencies were studied and the results showed that the optimum pH for the photoelectrocatalytic degradation was equal to 7.00. The optimum potential and the optimum concentration were about 0.5 V (vs. Ag|AgCl|KCl (3M) as reference electrode) and 0.129 mM in the studied ranges, respectively.     

Electromigration and microstructural properties of AI-Si/Ti/AI-Si VLSI metallization

Texas Instruments, Inc., Houston, Texas 77001 Al-Si(l%)/Ti/Al-Si(l%) interconnect lines produced by dc Magnetron sputtering were subjected to standard electromigration tests. Their time to failure proved to be superior to that of simple Al-Si(l%) films. The titanium tended to form TiAl₃ in which significant amounts of silicon were dissolved. Investigation by SEM revealed that most of the electromigration damage occurred in the portion between the protective oxide and the titanium layer.     

Dual metal SiC Schottky rectifiers with low power dissipation

Nickel and titanium are the most commonly used metals for Schottky barrier diodes on silicon carbide (SiC). Ti has a low Schottky barrier height (i.e. 0.8 eV on 6H-SiC), whilst Ni has a higher barrier (i.e. 1.25 eV). Therefore, the first metal allows to achieve a low forward voltage drop V_F but leads to a high leakage current. On the other hand, the second one presents the advantage of a lower reverse leakage current but has also a high value of V_F. In this work, dual-metal-planar (DMP) Schottky diodes on silicon carbide are reported. The rectifying barrier was formed by using an array of micrometric Ti and Ni₂Si (nickel silicide) stripes. This low/high Schottky barrier allowed to combine the advantages of the two metals, i.e. to fabricate diodes with a forward voltage drop close to that of a Ti diode and with a level of reverse current comparable to that of a Ni₂Si diode. Under the application point of view, using this kind of barrier can lead to a reduction of the device power dissipation and an increase of the maximum operating temperature.     

Manufacturing enhancements for CoSi/sub 2/ self-aligned silicide at the 0.12-/spl mu/m CMOS technology node

As integrated circuit manufacturing moves to the 0.12-/spl mu/m and finer-line technologies, a more comprehensive understanding of the manufacturability of the cobalt silicide (CoSi/sub 2/) module is needed. In this paper, a detailed study of the manufacturability of cobalt self-aligned silicide (Salicide) for the 0.12-/spl mu/m and finer technology nodes is discussed. Experimental design for the CoSi/sub 2/ processing steps included cobalt (Co), titanium (Ti), and titanium nitride (TiN) depositions; the first and second rapid thermal anneals (RTA1 and RTA2) and the selective metal etch. Grain structure (by X-ray diffraction), surface roughness (by atomic force microscopy), sheet resistance, thickness uniformity and leakage current measurements were taken to characterize the SAlicide process module. The results show that by using a TiN rather than Ti capping layer: a) the CoSi/sub 2/ sheet resistance nonuniformity has been improved; b) the CoSi/sub 2/ thickness is independent of the capping layer thickness; and c) CoSi/sub 2/ to silicon interface roughness is reduced, thus reducing junction leakage currents. Anneal studies indicate the RTA1 temperature dominates the CoSi/sub 2/ grain structure and grain size with higher annealing temperatures resulting in rougher CoSi/sub 2/ surfaces and higher junction leakage currents.     

Photoelectrochemical properties of porous silicon based novel photoelectrodes

Porous silicon interfaces have been modified with nitrided TiO₂ (TiON) nanoparticles to develop highly efficient photoelectrodes. Photoelectrodes were prepared by impregnating the electrochemically prepared porous silicon microchannels with titanium oxynitride. Photocatalytic measurements were carried out on titanium oxynitride particles in water‐methanol mixture and the results showed a dependence on the nitrogen concentration. Among the photoelectrodes used for photocurrent measurements, porous silicon impregnated with TiO₂ nitrided at 600 °C showed maximum photocurrent increase after exposure to sunlight‐type radiation. The enhancement in photocurrent was one order more for the porous silicon/titanium oxynitride hetero‐structure than that of polished silicon/titanium oxynitride hetero‐structure. Photoelectrodes thus prepared were found to have stable performance for a period of six months. This observation promises the possibility of using porous silicon/titanium oxynitride hetero‐structures as efficient electrodes for photovoltaic cells. Copyright © 2010 John Wiley & Sons, Ltd.     

Ti,W,Mo,TiW膜的阻挡性能比较

介绍了Ｔｉ－Ａｕ，Ｔｉ－Ｗ－Ｐｔ－Ａｕ，Ｍｏ－Ａｕ，ＴｉＷ－Ａｕ，ＴｉＷ－Ｐｔ－Ａｕ等多种金属膜分别在４００，４２５，４５０，４７５和５００℃，３０分钟等时退火后的显微镜观察结果和典型样品的俄歇能谱分析结果。结果表明，Ｔｉ由于在Ａｕ中扩散太快，阻挡性能较差，而Ｗ，Ｍｏ，ＴｉＷ都有较好的阻挡性能。结合实际应用，ＴｉＷ－Ｐｔ－Ａｕ应是硅微波功率管的金属化的较佳选择。