衬底温度对反应溅射TiN_x薄膜结构与电阻率的影响

采用反应磁控溅射方法,在不同Si(100)衬底温度下,制备出了TiNx薄膜。通过X射线衍射(XRD)、扫描电子显微镜(SEM)对TiNx薄膜的物相、微观结构进行了表征,采用电子能谱仪(EDS)测定了TiNx薄膜的成分,运用四探针测试仪测量了TiNx薄膜的电阻率,研究了衬底温度对溅射TiNx薄膜结构与电阻率的影响。研究结果表明:衬底温度从室温升高到600℃时,随着温度升高,TiNx薄膜的(111)晶面衍射峰逐渐增强,500℃后减弱;(200)晶面衍射峰在300℃时最强,之后减弱。随着衬底温度的升高,TiNx薄膜的晶粒逐渐增大,300℃达最大后减小。随着衬底温度升高,TiNx薄膜的N/Ti原子含量比降低,200℃时降到最低为0.99,随后升高,500℃时最高为1.34,随后再次降低。N/Ti原子含量比与薄膜电阻率呈明显反比变化。     

磁性材料、超导材料和器件

TM271,TB43 ZUU4UIU〔J46基片温度对坡莫合金薄膜结构和磁电阻的影响/王风平,刘还平,吴平,潘礼庆,邱宏,田跃,罗胜(北京科技大学)11发光学报‘一2 003,24(4)一435一437用磁控溅射方法制备了系列坡莫合金Nis。凡2。薄膜.利用X射线衍射、扫描电子显微镜和原子力显微镜分析了薄膜的结构、品粒取向、薄膜厚度、截面结构和表面形态.用4点探;则技术测量了薄膜的电阻和磁电阻.结果表明随衬底温度的升高,晶粒明显长大,膜内的缺陷和应力显著减少,而且增强了薄膜品粒的【1 111择优取向.结果表明,薄膜电阻率显著减小,而磁电阻显著增大.图3表1参5(…     

衬底温度对AIN薄膜结构及电阻率的影响

采用直流反应磁控溅射法在Si(111)基片上制备了AIN薄膜,利用XRD、原子力显微镜(AFM)、电流-电压(I-V)测试仪等对不同衬底下制备薄膜的结构、形貌及电阻率等进行了分析表征.结果表明:随着衬底温度的升高,晶粒逐渐长大,AIN(002)择优取向明显改善,600℃达到最佳.一定范围内提高温度使晶粒均匀、致密,有利于改善表面粗糙情况和提高电阻率,550℃时表面粗糙度达到最低(2.8 nm)且有最大的电阻率(3.35×1012Ω·cm);同时薄膜应力随温度升高有增大趋势.     

衬底温度对AlN薄膜结构及电阻率的影响

采用直流反应磁控溅射法在Si(111)基片上制备了AlN薄膜,利用XRD、原子力显微镜(AFM)、电流-电压(I-V)测试仪等对不同衬底下制备薄膜的结构、形貌及电阻率等进行了分析表征。结果表明:随着衬底温度的升高,晶粒逐渐长大,AlN(002)择优取向明显改善,600℃达到最佳。一定范围内提高温度使晶粒均匀、致密,有利于改善表面粗糙情况和提高电阻率,550℃时表面粗糙度达到最低(2.8 nm)且有最大的电阻率(3.35×1012Ω.cm);同时薄膜应力随温度升高有增大趋势。     

适用SAW器件的ZnO/Ti/Si薄膜制备及缺陷分析

在Si(100)衬底和Ti/Si(100)衬底上分别制备了ZnO薄膜,探讨了Ti缓冲层对ZnO薄膜结构和缺陷的影响,利用X射线衍射(XRD)测试了ZnO薄膜的晶体结构及择优取向,利用原子力显微镜(AFM)观察ZnO薄膜的表面粗糙度(RMS),利用光致发光(PL)光谱检测了ZnO薄膜的缺陷,利用四探针法测试了ZnO薄膜的电阻率。结果表明,在Ti/Si(100)衬底上、衬底温度350℃的条件下,制备的ZnO薄膜表面光滑、缺陷少、电阻率高且具有高C轴取向。本文这一工作对于压电薄膜缺陷分析及高性能ZnO的声表面波(SAW)器件研制有重要意义。     

电子束蒸发沉积TiN薄膜的电学特性研究

采用TCP(Transverse coupled plasma)等离子体辅助电子枪蒸镀技术,在玻璃衬底上制备了TiN薄膜。用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和原子力显微镜(AFM)研究了不同工艺条件对薄膜晶体结构和表面形貌的影响;用四探针法测量薄膜的电阻率变化。结果表明,所制备的TiN薄膜在(111)晶面有择优取向。与金属薄膜类似,TiN薄膜的平均表面粗糙度与电阻率之间存在近似线性关系,并且电阻率随残余应力增大而增大。     

PECVD法制备的ZnO薄膜结晶性能的影响

报道了在等离子体作用下,以CO2/H2为氧源,Zn(C2H5)2为锌源,N2为载气,在Si(111)衬底上采用自行设计等离子体化学气相沉积(PECVD)装置来生长的ZnO薄膜。采用X射线衍射仪(XRD)、原子力显微镜(AFM)和场发射扫描电镜分别对不同衬底温度生长的薄膜样品进行了组成、表面和横截面的形貌表征,并且测试了薄膜的PL谱。研究结果表明,衬底温度直接影响薄膜的结晶质量。随衬底温度的升高,ZnO薄膜的结晶取向性开始增强,晶粒尺寸增大。在衬底温度约为450℃时,生长的ZnO薄膜有很强的择优取向性。     

玻璃衬底上CdTe薄膜的制备及其性质

利用近空间升华法在经过不同打磨处理的玻璃衬底上制备了CdTe薄膜,用X射线衍射仪,扫描电镜表征了CdTe薄膜的微结构.结果表明CdTe薄膜的微观结构依赖于衬底粗糙度,(111)晶面的择优取向随衬底表面粗糙度的增加而降低.     

衬底温度对ScAlN薄膜结构及电阻率的影响

采用直流反应磁控溅射法、利用ScAl合金靶（含Sc质量分数10%）制备了一系列不同衬底温度的Sc掺杂AlN（ScAlN）薄膜。利用X线衍射仪、原子力显微镜和铁电测试仪的电流 电压(I V)模块研究了衬底温度对薄膜微观结构、表面形貌及电阻率的影响。结果表明,随着衬底温度升高,薄膜的（002）择优取向愈发明显,在650 ℃时达到最佳;薄膜的表面粗糙度随着衬底温度的升高而减小,在650 ℃、700 ℃时分别达到3.064 nm和2.804 nm,但当温度达到700 ℃时,薄膜表面局部开裂,因此,650 ℃为获得最佳结晶质量薄膜的适当温度。ScAlN薄膜电阻率随制备时衬底温度呈先增大后减小的趋势。     

AIN/Si(111)复合衬底上4H-SiC薄膜的异质外延

利用化学气相淀积(CVD)的方法在AlN/Si(111)复合衬底上成功实现了4H-SiC薄膜的异质外延生长,用X射线衍射(XRD)、扫描电子显微镜(SEM)、阴极荧光(CL)等方法对所得样品的结构特征、表面形貌和光学性质进行了表征测量.XRD测量结果显示得到的SiC薄膜的晶体取向单一;室温CL结果表明所得SiC薄膜为4H-SiC,且随着生长温度的升高,SiC薄膜的CL发光效率提高.生长温度、反应气源中C/si比等工艺参数对SiC薄膜的外延生长及其性质影响的研究表明在AIN/Si(111)复合衬底上外延4H-SiC的最佳衬底温度为1230～1270℃,比通常4H-SiC同质外延所需的温度低200～300℃;较为合适的C/Si比值为1.3.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks