Localized temperature and chemical reaction control in nanoscale space by nanowire array

We introduce a novel method for chemical reaction control with nanoscale spatial resolution based on localized heating by using a well-aligned nanowire array. Numerical and experimental analysis shows that each individual nanowire could be selectively and rapidly Joule heated for local and ultrafast temperature modulation in nanoscale space (e.g., maximum temperature gradient 2.2 K/nm at the nanowire edge; heating/cooling time < 2 μs). By taking advantage of this capability, several nanoscale chemical reactions such as polymer decomposition/cross-linking and direct and localized hydrothermal synthesis of metal oxide nanowires were demonstrated.     

Nanoparticle-mediated coupling of light into a nanowire

We show that a nanoparticle can serve as an efficient antenna for coupling of visible light into propagating plasmons of an Ag nanowire. For long wires, the coupling is maximal for incident light polarized perpendicular to the nanowire. For sub-10-mum nanowires, the polarization corresponding to maximum emission from the ends of the nanowire was found to be strongly dependent on the nanowire geometry and position of the vicinal nanoparticle. This nanoparticle antenna-based approach offers a potential strategy for optimizing plasmon coupling into nanoscale metallic waveguides.     

Electroplate and lift lithography for patterned micro/nanowires using ultrananocrystalline diamond (UNCD) as a reusable template

A fast, simple, scalable technique is described for the controlled, solution-based, electrochemical synthesis of patterned metallic and semiconducting nanowires from reusable, nonsacrificial, ultrananocrystalline diamond (UNCD) templates. This enables the repeated fabrication of arrays of complex patterns of nanowires, potentially made of any electrochemically depositable material. Unlike all other methods of patterning nanowires, this benchtop technique quickly mass-produces patterned nanowires whose diameters are not predefined by the template, without requiring intervening vacuum or clean room processing. This technique opens a pathway for studying nanoscale phenomena with minimal equipment, allowing the process-scale development of a new generation of nanowire-based devices.     

Selective surface functionalization of silicon nanowires via nanoscale joule heating

In this letter, we report a novel approach to selectively functionalize the surface of silicon nanowires located on silicon-based substrates. This method is based upon highly localized nanoscale Joule heating along silicon nanowires under an applied electrical bias. Numerical simulation shows that a high-temperature (>800 K) with a large thermal gradient can be achieved by applying an appropriate electrical bias across silicon nanowires. This localized heating effect can be utilized to selectively ablate a protective polymer layer from a region of the chosen silicon nanowire. The exposed surface, with proper postprocessing, becomes available for surface functionalization with chemical linker molecules, such as 3-mercaptopropyltrimethoxysilanes, while the surrounding area is still protected by the chemically inert polymer layer. This approach is successfully demonstrated on silicon nanowire arrays fabricated on SOI wafers and visualized by selective attachment of gold nanoparticles.     

Defect-driven synthesis of self-assembled single crystal titanium nanowires via electrochemistry

One-dimensional single crystal nanostructures have garnered much attention, from their low-dimensional physics to their technological uses, due to their unique properties and potential applications, from sensors to interconnects. There is an increasing interest in metallic titanium nanowires, yet their single crystal form has not been actualized. Vapor-liquid-solid (VLS) and template-assisted top-down methods are common means for nanowire synthesis; however, each has limitations with respect to nanowire composition and crystallinity. Here we show a simple electrochemical method to generate single crystal titanium nanowires on monocrystalline NiTi substrates. This work is a significant advance in addressing the challenge of growing single crystal titanium nanowires, which had been precluded by titanium's reactivity. Nanowires grew non-parallel to the surface and in a periodic arrangement along specific substrate directions; this behavior is attributed to a defect-driven mechanism. This synthesis technique ushers in new and rapid routes for single crystal metallic nanostructures, which have considerable implications for nanoscale electronics.     

Burning match oxidation process of silicon nanowires screened at the atomic scale

Silicon oxide nanowires hold great promise for functional nanoscale electronics. Here, we investigate the oxidation of straight, massively parallel, metallic Si nanowires. We show that the oxidation process starts at the Si NW terminations and develops like a burning match. While the spectroscopic signatures on the virgin, metallic part, are unaltered we identify four new oxidation states on the oxidized part, which show a gap opening, thus revealing the formation of a transverse internal nanojunction.     

Integrating nanowires with substrates using directed assembly and nanoscale soldering

This paper describes a new methodology for integrating nanowires with micropatterned substrates using directed assembly and nanoscale soldering. Nanowires containing ferromagnetic nickel segments were fabricated by electrodeposition in nanoporous membranes. The nanowires were released by dissolution of the membrane and subsequently aligned relative to micropatterned substrates using magnetic field-directed assembly. After assembly, the wires were permanently bonded to the substrates using solder reflow to form low-resistance electrical contacts. This is the first demonstration of the use of nanoscale solder reflow to form low-resistance electrical interconnects between nanowires and substrates, and we demonstrated the utility of the strategy by fabricating a nanowire-based functional analog integrator.     

Electrical nanowelding and bottom-up nano-construction together using nanoscale solder

A new bottom-up nanowelding technique enabling the welding of complex 3D nanoarchitectures assembled from individual building blocks using nanovolumes of metal solder is reported in this work. The building blocks of gold nanowires, (Co72Pt28/Pt)n multilayer nanowires, and nanosolder Sn99Au1 alloy nanowires were successfully fabricated by a template technique. Individual metallic nanowires dispersed on Si/SiO2(100 nm) wafers were manipulated and assembled together. Conductive nanostructures were then welded together by the new electrical nanowelding technique using nanovolumes of similar or dissimilar nanosolder. At the weld sites, nanoscale volumes of a chosen metal are deposited using nanosolder of a sacrificial nanowire, which ensures that the nanoobjects to be bonded retain their structural integrity. The whole nanowelding process is clean, controllable and reliable, and ensures both mechanically strong and electrically conductive contacts. The quality check of nanoweld achieve a resistance as low as 20 omega by using Sn99Au1 alloy solder. This technique should provide a promising way to conquer the challenge of the integration obstacle for bottom-up nanotechnology.     

Dielectrophoretically controlled fabrication of single-crystal nickel silicide nanowire interconnects

We report here on applying electric fields and dielectric media to achieve controlled alignment of single-crystal nickel silicide nanowires between two electrodes. Depending on the concentration of nanowire suspension and the distribution of electrical field, various configurations of nanowire interconnects, such as single, chained, and branched nanowires were aligned between the electrodes. Several alignment mechanisms, including the induced charge layer on the electrode surface, nanowire dipole-dipole interactions, and an enhanced local electrical field surrounding the aligned nanowires are proposed to explain these novel dielectrophoretic phenomena of one-dimensional nanostructures. This study demonstrates the promising potential of dielectrophoresis for constructing nanoscale interconnects using metallic nanowires as building blocks.     

Mechanically Assisted Self‐Healing of Ultrathin Gold Nanowires

As the critical feature sizes of integrated circuits approaching sub‐10 nm, ultrathin gold nanowires (diameter <10 nm) have emerged as one of the most promising candidates for next‐generation interconnects in nanoelectronics. Also due to their ultrasmall dimensions, however, the structures and morphologies of ultrathin gold nanowires are more prone to be damaged during practical services, for example, Rayleigh instability can significantly alter their morphologies upon Joule heating, hindering their applications as interconnects. Here, it is shown that upon mechanical perturbations, predamaged, nonuniform ultrathin gold nanowires can quickly recover into uniform diameters and restore their smooth surfaces, via a simple mechanically assisted self‐healing process. By examining the local self‐healing process through in situ high‐resolution transmission electron microscopy, the underlying mechanism is believed to be associated with surface atomic diffusion as evidenced by molecular dynamics simulations. In addition, mechanical manipulation can assist the atoms to overcome the diffusion barriers, as suggested by ab initio calculations, to activate more surface adatoms to diffuse and consequently speed up the self‐healing process. This result can provide a facile method to repair ultrathin metallic nanowires directly in functional devices, and quickly restore their microstructures and morphologies by simple global mechanical perturbations.     

Highly flexible transparent film heaters based on random networks of silver nanowires

We demonstrate a new concept for the fabrication of flexible transparent thin film heaters based on silver nanowires. Thanks to the intrinsic properties of random networks of metallic nanowires, it is possible to combine bendability, transparency and high heating performances at low voltage, typically below 12 V which is of interest for many applications. This is currently not possible with transparent conductive oxide technologies, and it compares well with similar devices fabricated with carbon nanotubes or graphene. We present experiments on glass and poly(ethylene naphthalate) (PEN) substrates (with thicknesses of 125 μm and extremely thin 1.3 μm) with excellent heating performances. We point out that the amount of silver necessary to realize the transparent heaters is very low and we also present preliminary results showing that this material can be efficiently used to fabricate photochromic displays. To our knowledge, this is the first report of metallic nanowire-based transparent thin film heaters. We think these results could be a useful approach for the engineering of highly flexible and transparent heaters which are not attainable by existing processes.      

Actin-based metallic nanowires as bio-nanotransporters

The synthesis of conductive nanowires or patterned conductive nanoelements is a challenging goal for the future fabrication of nanoscale circuitry. Similarly, the realization of nanoscale mechanics might introduce a new facet to the area of nanobiotechnology. Here we report on the design of conductive and patterned actin-based gold nanowires, and on the ATP-driven motility of the nano-objects. The polymerization of G-actin labelled with Au nanoparticles, followed by the catalytic enlargement of the nanoparticles, yields gold wires (1-4 microm long and 80-200 nm high) exhibiting high electrical conductivity. The polymerization of the Au nanoparticle/G-actin monomer followed by the polymerization of free G-actin, or alternatively the polymerization of the Au-nanoparticle-labelled G-actin on polymerized F-actin followed by the catalytic enlargement of the particles, yields patterned actin-Au wire-actin or Au wire-actin-Au wire nanostructures, respectively. We demonstrate the ATP-fuelled motility of the actin-Au wire-actin filaments on a myosin interface. These actin-based metallic wires and their nanotransporting funcionality introduce new concepts for developing biological/inorganic hybrid devices.     

Epitaxial integration of nanowires in microsystems by local micrometer-scale vapor-phase epitaxy

Free-standing epitaxially grown nanowires provide a controlled growth system and an optimal interface to the underlying substrate for advanced optical, electrical, and mechanical nanowire device connections. Nanowires can be grown by vapor-phase epitaxy (VPE) methods such as chemical vapor deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid optimization of VPE conditions. The important issue of the cross-contamination of other parts of the microsystem caused by the local growth of nanowires is also investigated by growth of GaN near previously grown silicon nanowires. The design of the cantilever heaters makes it possible to study the grown nanowires with a transmission electron microscope without sample preparation.     

Chemically-mechanically assisted synthesis of metallic and oxide nanoparticles in ambient conditions

Based on the redox principle of galvanic displacement reaction, active metal foils, including magnesium (Mg), aluminum (Al) and cobalt (Co), were creatively introduced as new heterogeneous reducing media and were successfully employed in the presence of sonomechanical assistance to produce metallic nanoparticles such as silver, copper, tin and metal oxides such as those of iron, cobalt and ruthenium. Various combinations were investigated to determine the optimum ion/foil pairings for dense and monodisperse colloids. A wide range of nanoscale metallic species can be achieved by this method given optimum combination of ion/foil pairing. This new strategy greatly enriches and extends the existing methods for metallic nanoparticles preparation.     

Mapping the "forbidden" transverse-optical phonon in single strained silicon (100) nanowire

The accurate manipulation of strain in silicon nanowires can unveil new fundamental properties and enable novel or enhanced functionalities. To exploit these potentialities, it is essential to overcome major challenges at the fabrication and characterization levels. With this perspective, we have investigated the strain behavior in nanowires fabricated by patterning and etching of 15 nm thick tensile strained silicon (100) membranes. To this end, we have developed a method to excite the "forbidden" transverse-optical (TO) phonons in single tensile strained silicon nanowires using high-resolution polarized Raman spectroscopy. Detecting this phonon is critical for precise analysis of strain in nanoscale systems. The intensity of the measured Raman spectra is analyzed based on three-dimensional field distribution of radial, azimuthal, and linear polarizations focused by a high numerical aperture lens. The effects of sample geometry on the sensitivity of TO measurement are addressed. A significantly higher sensitivity is demonstrated for nanowires as compared to thin layers. In-plane and out-of-plane strain profiles in single nanowires are obtained through the simultaneous probe of local TO and longitudinal-optical (LO) phonons. New insights into strained nanowires mechanical properties are inferred from the measured strain profiles.     

Electric field-assisted deposition of nanowires on carbon nanotubes for nanoelectronics and sensor applications

Manipulation and control of matter at the nanoscale and atomic scale levels are crucial for the success of nanoscale sensors and actuators. The ability to control and synthesize multilayer structures using carbon nanotubes that will enable the building of electronic devices within a nanotube is still in its infancy. In this paper, we present results on selective electric field-assisted deposition of metals on carbon nanotubes realizing metallic nanowire structures. Silver and platinum nanowires have been fabricated using this approach for their applications in chemical sensing as catalytic materials to sniff toxic agents and in the area of biomedical nanotechnology for construction of artificial muscles. Electric field-assisted deposition allows the deposition of metals with a high degree of selectivity on carbon nanotubes by manipulating the charges on the surface of the nanotubes and forming electrostatic double-layer supercapacitors. Deposition of metals primarily occurred due to electrochemical reduction, electrophoresis, and electro-osmosis inside the walls of the nanotube. SEM and TEM investigations revealed silver and platinum nanowires between 10 nm and 100 nm in diameter. The present technique is versatile and enables the fabrication of a host of different types of metallic and semiconducting nanowires using carbon nanotube templates for nanoelectronics and a myriad of sensor applications.     

Array-based architecture for FET-based, nanoscale electronics

Advances in our basic scientific understanding at the molecular and atomic level place us on the verge of engineering designer structures with key features at the single nanometer scale. This offers us the opportunity to design computing systems at what may be the ultimate limits on device size. At this scale, we are faced with new challenges and a new cost structure which motivates different computing architectures than we found efficient and appropriate in conventional very large scale integration (VLSI). We sketch a basic architecture for nanoscale electronics based on carbon nanotubes, silicon nanowires, and nano-scale FETs. This architecture can provide universal logic functionality with all logic and signal restoration operating at the nanoscale. The key properties of this architecture are its minimalism, defect tolerance, and compatibility with emerging bottom-up nanoscale fabrication techniques. The architecture further supports micro-to-nanoscale interfacing for communication with conventional integrated circuits and bootstrap loading.     

Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices

We report the formation of PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices from such heterostructures. Scanning electron microscopy studies show that silicon nanowires can be converted into PtSi nanowires through controlled reactions between lithographically defined platinum pads and silicon nanowires. High-resolution transmission electron microscopy studies show that PtSi/Si/PtSi heterostructure has an atomically sharp interface with epitaxial relationships of Si[110]//PtSi[010] and Si(111)//PtSi(101). Electrical measurements show that the pure PtSi nanowires have low resistivities approximately 28.6 microOmega.cm and high breakdown current densities>1x10(8) A/cm2. Furthermore, using single crystal PtSi/Si/PtSi nanowire heterostructures with atomically sharp interfaces, we have fabricated high-performance nanoscale field-effect transistors from intrinsic silicon nanowires, in which the source and drain contacts are defined by the metallic PtSi nanowire regions, and the gate length is defined by the Si nanowire region. Electrical measurements show nearly perfect p-channel enhancement mode transistor behavior with a normalized transconductance of 0.3 mS/microm, field-effect hole mobility of 168 cm2/V.s, and on/off ratio>10(7), demonstrating the best performing device from intrinsic silicon nanowires.     

Self‐Healing of a Confined Phase Change Memory Device with a Metallic Surfactant Layer

Understanding and possibly recovering from the failure mechanisms of phase change memories (PCMs) are critical to improving their cycle life. Extensive electrical testing and postfailure electron microscopy analysis have shown that stuck–set failure can be recovered. Here, self‐healing of novel confined PCM devices is directly shown by controlling the electromigration of the phase change material at the nanoscale. In contrast to the current mushroom PCM, the confined PCM has a metallic surfactant layer, which enables effective Joule heating to control the phase change material even in the presence of a large void. In situ transmission electron microscope movies show that the voltage polarity controls the direction of electromigration of the phase change material, which can be used to fill nanoscale voids that form during programing. Surprisingly, a single voltage pulse can induce dramatic migration of antimony (Sb) due to high current density in the PCM device. Based on the finding, self‐healing of a large void inside a confined PCM device with a metallic liner is demonstrated for the first time.     

Quantum dot-based local field imaging reveals plasmon-based interferometric logic in silver nanowire networks

We show that the local electric field distribution of propagating plasmons along silver nanowires can be imaged by coating the nanowires with a layer of quantum dots, held off the surface of the nanowire by a nanoscale dielectric spacer layer. In simple networks of silver nanowires with two optical inputs, control of the optical polarization and phase of the input fields directs the guided waves to a specific nanowire output. The QD-luminescent images of these structures reveal that a complete family of phase-dependent, interferometric logic functions can be performed on these simple networks. These results show the potential for plasmonic waveguides to support compact interferometric logic operations.