Three-dimensional self-consistent simulation of silicon quantum-dotfloating-gate flash memory device

We report on the simulation of single-electron charging operation of a silicon quantum-dot memory device using the self-consistent solutions of the Schrodinger and Poisson equations. We focus on the effects of the poly-wrapped gate on the onset of inversion. We show that the geometry of the control gate causes the inversion to occur on the vertical sides of the channel. The device experiences a strongly nonuniform threshold voltage shift as a function of the number of electrons in the dot to reach about 0.5 V when the floating gate quantum-dot is charged from empty to ten electrons     

InGaAs-Capped InAs–GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range

A ten-period InAs-GaAs quantum-dot infrared photodetector (QDIP) with 8-nm In_0.15Ga_0.85 As capping layer grown after quantum-dot (QD) deposition is investigated. With reduced InAs QD coverage down to 2.0 mono-layers, responses at 10.4 and 8.4 mum are observed for the device under positive and negative biases, respectively. The phenomenon is attributed to the large Stark effect resulted from the asymmetric band diagrams of the device under different voltage polarities. The demonstration of long-wavelength infrared detections with the simple structures of the InGaAs-capped QDIP is advantageous for the development of multicolor QDIP focal-plane arrays.     

Charging and discharging phenomena in electrostatically-driven single-crystal-silicon MEM resonators: DC bias dependence and influence on the series resonance frequency

This paper presents a first study concerned with charging and discharging phenomena in single crystal silicon MEM resonators. It is shown that the DC voltage required for the device operation induces a residual voltage between the resonator and its driving electrode, which is attributed to dielectric charging. The residual voltage can affect the device series resonance frequency and is determined from the measurements. The residual voltage maximum amplitude and the charging rate depend not only on the stressing voltage amplitude but also on the polarization.     

Effects of die location on hot-carrier response of plasma-etchedNMOS devices

Plasma-process-induced charging voltage for a device may be positive (gate is positive with respect to the substrate) or negative depending on the location of the device on the wafer. The negative charging damage increases the number of trapped holes closer to Si-SiO ₂ interface while the positive charging damage does not. This number of trapped holes also depends on the antenna ratio. The trapped holes closer to the Si-SiO₂ interface gets compensated by hot electrons injected during hot-carrier stressing. Thus, the type of charging voltage and the antenna size determines the hot-carrier response of a device. In addition, the differences in hot-carrier response for devices with varying antenna ratio are shown to be varying linearly with the differences in prestress subthreshold characteristics. This finding has the potential to reduce the hot-carrier stressing time or determine the most vulnerable devices without actually carrying out the experiments     

36kV/10kW CO2激光器充电电源的研制

为了改善现有CO2激光器工频LC谐振充电时充电电压随激光器工作频率升高而降低、影响激光输出的稳定性和光束质量,不利于装置的小型化和轻量化的问题。采用全桥逆变结构和串联谐振软开关电路,研究了36kV/10kW高频高压充电电源。该电源系统采用三相380V交流电作为供电系统,大功率智能功率模块作为全桥逆变电路。逆变交流信号经串联谐振电路及高频脉冲变压器得到高压脉冲信号,高压脉冲经整流给负载电容充电,电源应用电压电流双闭环控制系统,输出电压、电流经采样及放大后,反馈到电源控制芯片SG3525,芯片SG3525通过判断反馈信号的大小,控制输出脉冲宽度调制驱动信号的占空比。激光器放电频率为25Hz时,电源输出电压为37kV,峰值输出功率为13.05kW,充电效率为0.826。结果表明,该高频高压充电电源适合用作CO2激光器的高压充电电源。     

Temperature study of the dielectric polarization effects of capacitive RF MEMS switches

This paper investigates both theoretically and experimentally the dielectric charging effects of capacitive RF microelectromechanical system switches with silicon nitride as dielectric layer. Dielectric charging caused by charge injection under voltage stress was observed. The amphoteric nature of traps and its effect on the switch operation were confirmed under both positive and negative control voltages. It has been confirmed that charging is a complicated process, which can be better described through the stretched exponential relaxation. This mechanism is thermally activated with an activation energy being calculated from the temperature dependence of the capacitance transient response. The charging mechanism, which is responsible for the pull-out voltage and the device failure, is also responsible for the temperature-induced shift of the capacitance minimum bias.     

基于PWM技术蓄电池充放电与检测系统设计

为解决传统蓄电池充放电装置功率因数低、高谐波污染等不足,针对电力机车用15kVA蓄电池,设计了基于PWM整流逆变技术的蓄电池充放电装置与检测监控系统。装置用作充电电源时,采用电流双闭环控制系统,实现分阶段恒流模式或恒压模式充电;用作蓄电池放电试验的负载时,将能量回馈电网。通过SPWM调制可实现放电功率的灵活调控。试验及检测结果表明该装置具有能量双向流动、网侧电流正弦化、功率因数高、功率灵活调控的特点。     

A new UPS topology employing a PFC boost rectifier cascadedhigh-frequency tri-port converter

A new uninterruptible power supply (UPS) topology using the high-frequency tri-port UPS technique is proposed which presents the advantages of no-break power, low cost, input unity power factor, high power density, and high power conversion efficiency. Through the proposed circuit configuration, charging concept, and control strategy, the battery management is easily obtained by controlling the output voltage of the power-factor-correction (PFC) converter, which results in no additional power device being required for charging. The implementing circuit of the charging method is submitted to perform the two-stage charging, constant current charging, and constant voltage charging. The proposed technologies can be applied to the switching power supply with built-in UPS function featuring a low-cost solution for computer equipment, Finally, an experimental AC online UPS is built to verify the proposed concept, analysis, and control strategy     

The prospect of process-induced charging damage in future thin gate oxides

Gate oxide scaling effect on plasma charging damage is discussed for various IC fabrication processes such as metal etching, contact oxide etching, high current ion implantation, and via contact sputtering. Capacitance distortion, stress-induced leakage current, MOSFET characteristics, and circuit performance are used for evaluating the charging damage. We observed that very thin gate oxides are less susceptible to the charging damage because of their lower rate of interface damage, larger charge-to-breakdown, and less device determined stress voltage in the plasma system. We also discuss the diode protection scheme and design techniques for minimizing the charging damage. Latent damage exists after thermal annealing and can be revealed during the subsequent device operation causing circuit performance degradation. High density plasma etching is a trend of the etching technology as it provides better anisotropy, selectivity, and uniformity. Its effects on oxide charging damage is compared with low-density plasma etching. The resistance to process-induced charging damage of future devices appears to be high. This is counter-intuitive and is a good tiding for the future of IC manufacturing. The emergence of alternative gate dielectric raises questions about charging damage that requires further studies.     

Evaluation of plasma charging damage in ultrathin gate oxides

Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 mm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides     

实时监视光导热塑全息记录仪的研制

本文基于实时监视光导热塑全息技术,提出了一种实用的光导热塑全息记录仪.主要特点是结构合理、负载能力强、性能稳定、电压调节范围宽、安全系数高.电晕充电器小巧透明、充电均匀.使用该仪器,能够录制出衍射强,信噪比高的优质全息图.文中介绍了仪器原理、结构与特性,给出了应用结果.     

基于DMD的外腔量子点激光器性能研究

为了取得更加完善的外腔量子点激光器(QDL)测试 数据,构建了基于数字微镜器件(DMD,digital micro-mirror device)的InAs/InP量子 点外腔QDL。测量了其 光谱特性以及调谐范围,得到了基于DMD的外腔QDL调谐范围和相应的模式变 化。在理论和实验上与基于光栅的外腔QDL性能进行了比较,得到了在角色 散和反射光谱中与光栅的区别,实现了将DMD应用于外腔QDL中而获得的一种 新方法。     

基于AVR单片机的智能充电器的设计与实现

介绍了以AVR单片机为核心智能充电器的控制原理,讨论了充电器的硬件结构和软件设计思想.该充电器对充电过程进行全面管理,描述了充电检测的关键技术,实现了智能充电.并对充电电源、电压进行自动检测调整,充电后自动转为恒压浮充状态,使充电过程按理想的充电曲线进行,达到既保护电池、又能使电池充满的最佳效果等要求.这种全新的智能充电方式,有效地解决了普通充电器将蓄电池"充坏"的技术难题,大幅度提高了蓄电池的实际循环寿命,是电动自动车、电动汽车的理想产品.     

多隧道结单电子动态存储器的Monte Carlo模拟

本文采用Monte Carlo方法模拟了多隧道结单电子动态存储器的存储特性，考察了隧道结的个数、隧道结电容、隧道结电阻、脉冲电压幅度等参数对存储器的存储时间和饱和充电电荷的影响，并与宏观RC电路进行了比较。     

Hybrid Nanoparticle/Organic Devices with Strong Resonant Tunneling Behaviors

A hybrid nanoparticle/organic device consisting of small molecule organic semiconductors and Ag nanoparticles is reported. The single device exhibits unusual properties of organic resonant tunneling diode (ORTD) at low driving voltage region and offers light emission at high voltage. For ORTD, a strong negative differential resistance behavior is demonstrated at room temperature. The current resonance with the peak‐to‐valley current ratio of over 4.6 and narrow linewidth of only ～1.4 V is achieved. A detailed operating mechanism of the charging and emission modes is proposed, which can be discussed in terms of the strong charge‐trapping effect of Ag nanoparticles. The repeatable operations of hybrid device show the mutual influences between two modes and the light emission properties of the ORTD are also discussed.     

一种指纹锁电量智能检测及充电装置的设计

随着科学技术与经济的快速发展,以及智能家居的不断升级,这种在打开方式上完全不同于机械锁的集指纹、密码与人脸识别于一体的智能锁逐渐得到了现代人们的青睐。文章论述了一种指纹锁电量智能检测及充电装置的设计,首先通过磁性触点机构的闭合来连通充电电路,接着利用电量检测芯片检测可充电电池的电量,然后将检测结果与低电压阈值比较判断是否需要智能充电,从而解决指纹锁长久稳定供电的问题。     

高K栅堆叠结构MOSFET器件阈值电压不稳定度的半经验解析模型

A semi-empirical analytic model for the threshold voltage instability of MOSFET is derived from the Shockley-Read-Hall (SRH) statistics in this paper to account for the transient charging effects in a MOSFET high-k gate stack. Starting from the single energy level and single trap assumption, an analytical expression of the filled trap density in terms of the dynamic time is derived from the SRH statistics. The semi-empirical analytic model of the threshold voltage instability is developed based on the MOSFET device physics between the threshold voltage and the induced trap density. The obtained model is also verified by the extensive experimental data of the trapping and de-trapping stress from the different high k gate configuration.     

Voltage-Dependent Charge Storage in Cladded Zn0.56Cd0.44Se Quantum Dot MOS Capacitors for Multibit Memory Applications

As conventional memories approach scaling limitations, new storage methods must be utilized to increase Si yield and produce higher on-chip memory density. Use of II–VI Zn_0.56Cd_0.44Se quantum dots (QDs) is compatible with epitaxial gate insulators such as ZnS-ZnMgS. Voltage-dependent charging effects in cladded Zn_0.56Cd_0.44Se QDs are presented in a conventional metal–oxide–semiconductor capacitor structure. Charge storage capabilities in Si and ZnMgS QDs have been reported by various researchers; this work is focused on II–VI material Zn_0.56Cd_0.44Se QDs nucleated using photoassisted microwave plasma metalorganic chemical vapor deposition. Using capacitance–voltage hysteresis characterization, the multistep charging and discharging capabilities of the QDs at room temperature are presented. Three charging states are presented within a 10 V charging voltage range. These characteristics exemplify discrete charge states in the QD layer, perfect for multibit, QD-functionalized high-density memory applications. Multiple charge states with low operating voltage provide device characteristics that can be used for multibit storage by allowing varying charges to be stored in a QD layer based on the applied “write” voltage.     

Polyimide-related design considerations in a bipolar technology

It is found that a spurious leakage path from the emitter to the collector of a lateral p-n-p or a trench-defined n-p-n device may be induced by the applied collector voltage. This voltage influences the surface potential at the emitter-base junction through the charging of the polyimide used as interlevel dielectric or as trench fill, respectively. A simple model of the effect is developed, and several successful process features are discussed     

An apparatus for producing mechanical step pulses for biorheologic studies

A device to produce displacement step pulses for studying viscoelastic wave propagation in biological specimens was developed on the basis of condenser discharge through a solenoid. The amplitude and rise time of the pulse step can be adjusted by varying the condenser capacity, charging voltage, and distance between the armature and the electromagnet.