如何探索新的激光晶体

本文概述研制新型激光晶体的一般实验流程。     

角抽运全固态激光器的研究进展

报道了清华大学光子与电子技术研究中心近年来在角抽运全固态激光器方面的研究成果,其中包括大功率全固态角抽运Yb:YAG激光器的研制,全固态角抽运Yb:YAG绿光激光器的研制以及中小功率全固态角抽运Nd:YAG基模激光器的研制.     

片状晶体谐振器及工艺探索

介绍了当前石英晶体器件片状化概况。给出了可用地表面贴装元器件的工艺工作进展情况；并提出了对今后研制、生产工作的考虑。     

光纤通信用光子晶体器件（一）

简介光子晶体及其光纤通信用光子晶体器件(它们分别是光子晶体光纤、光子晶体光波导、光子晶体激光器、光子晶体滤波器和光子晶体波长复用／解复用器)的基本工作原理和制作技术以及目前的研制状况。     

BSO晶体光纤的法拉第磷光效应

研制出具有法拉第磁光效应的BSO晶体光纤,利用光线分析和琼斯矩阵方法对BSO晶体光纤进行了理论分析和实验验证。结果表明,这种新型光纤可以在磁光调制、磁场(或电流)传感等方面得到应用。     

浅析一种60MHz的正弦波钟振电路

详细介绍了60 MHz正弦波钟振电路的研制方案,包括电路原理、研制方法、外型结构及技术难点的解决。     

光纤光栅用PCF的制备

简单介绍了国内外光子晶体光纤(PCF)最新的研制进展.阐述了采用堆砌法自主研制光敏PCF的整个制作过程及关键工艺,最后指出PCF广泛的应用前景.     

YAP系列晶体光纤的生长和LD泵浦的Nd:YAP单晶光纤激光器

本文叙述了YAP系列晶体光纤的优点和生长方法;用激光加热小基座法生长出直径范围为50～500μm,直径波动<±1％/cm的YAP系列晶体光纤。研制成用LD泵浦的单晶Nd∶YAP光纤激光器,输出为1.0795μm波长的线偏光,最大输出功率为1mW。     

水平法生长GaSb单晶的研究

本文采用独特的工艺和装置,用水平法研制GaSb单晶.已获得不掺杂p型晶体,室温下其载流子浓度和迁移率分别为1.0～1.7×10~(17)cm~(-3)和630～780cm~2/V·s;渗Te的n型单晶两者分别为1.4×10~(18)cm~(-3)和2690cm~2/V·s,成晶率大于50%.本文还探讨了研制过程中存在的几个问题.     

光子晶体光纤的研究新进展

国际上关于光子晶体光纤(PCF)的研究主要集中在改善PCF的性能和拓展PCF的应用领域两方面.文章介绍了光子晶体光纤的结构、导光原理和主要特性,并重点讨论了高性能光子晶体光纤的研制情况以及光子晶体光纤的在应用领域的新进展.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

避免MOS管在测试时受EOS损坏的方法

由于MOS管是浅结系列产品,极有可能在测试时遭到静电击穿或过压过流而损坏。文中主要介绍MOS管在测试过程中,会造成实际测试时器件加上了允许的最大电压、电流或功率而导致器件损坏的情况。例如,在测试过程中电源连接不良,测试片与器件接触不良,管脚接错,在测试程序中未设置正确的电压和电流钳位或DUT板损坏等。然后,针对此类现象的发生,提出了在测试过程中应采取的相应措施,从而有效地保证产品质量。     

Design and nonlinearity compensation of Fabry-Perot type tunable optical filters for dynamic strain sensing systems

The collected spectrum of the fiber Bragg grating （FBG） and the loss of the detected optical power are discussed with respect to the 3-dB bandwidth of a Fabry-Perot （F-P） type tunable optical filter （TOF）, respectively. And the optimized parameters of the TOF are obtained consequently. It is demonstrated that the relationship between the transmission wave- length of the TOF and its drive voltage is nonlinear. A new method to compensate the nonlinearity of the TOF is proposed. The linear sweeping of the transmission wavelength of the TOF is achieved through modifying the drive voltage using interpolation algorithm. It is observed that the average error and the maximum error of the transmission wavelength are reduced sharply under linear fit. The dynamic strain sensing is realized by use of a reference FBG and moving averaging algorithm in this system.     

一种改善LED背光亮度均匀性的新型反射膜研究

在LCD的LED背光腔体的底面设计了新型曲面形状及性能的反光膜,将扩散膜反射回灯腔底部的光重新反射回出光口以改善亮度均匀性能;在侧面设计了镜面反射膜,将位于LED矩阵边缘区域由LED射向灯腔侧壁的光反射重新射向出光口,增加了LED背光边缘区域的亮度,从而改善了背光边缘区域较暗的亮度不均匀状况.根据此类反射膜的设计完成了反射膜的制备,并应用于38 cm LED背光源样品.测试结果显示,设置反射膜的LED背光的亮度均匀性值为10.2%,明显优于未设置反射膜的值16.8%,亮度提高了29%左右,表明该种新型反射膜可以提高亮度并改善亮度均匀性.     

圆球微腔对水蒸汽的敏感特性仿真实验研究

研究了圆球微腔在水蒸汽传感中应用的可行性。通过测试在有/无水蒸汽的气室环境下,圆球微腔透射光谱的变化来对气室水蒸汽浓度情况进行传感测试。仿真实验结果显示:在有无水蒸汽干扰的条件下系统输出光强有明显的变化,即研制基于圆球微腔的传感器是可行的。     

位屏蔽多叉树搜索射频识别防碰撞算法

针对RFID树型防碰撞算法中时隙数多、数据通行量大等问题,提出了一种改进的多叉树防碰撞算法,阅读器准确检测碰撞位并向标签反馈碰撞位信息,标签对阅读器已知的ID位进行屏蔽,把ID号转换成连续碰撞的序列号.阅读器利用屏蔽位信息和标签返回的碰撞位编码信息,对标签进行分层分类搜索.通过对标签ID进行屏蔽,阅读器和标签间仅发送对方不知道的碰撞位信息.该算法减少了碰撞时隙和识别时隙,避免了空闲时隙,减少了阅读器和标签间的数据通信量.理论分析和仿真结果表明,该算法减少了系统的时隙总数和数据通信量,提高了阅读器的识别效率.     

Characteristics of gradually doped LWIR diodes by hydrogenation

The hydrogenation effects on HgCdTe diode performance are presented and the mechanism of hydrogenation is revealed. By the hydrogenation, R₀A is increased by 30 times and photo-response is also improved. It is supposed that these are explained by the increased minority carrier lifetime by the hydrogenation. However, it is found from LBIC measurements that the minority carrier lifetime doesn’t increase by the hydrogenation. An important clue that explains the hydrogenation effects is found from Hall measurements. It is found that, after the hydrogenation, the doping concentration of Hg-vacancy doped substrate decreases and the mobility increases. For the heavily hydrogenated bulk substrate, it is also found that the hydrogen passivates the whole Hg-vacancy and reveals the residual impurity and p-type doping concentration is exponentially graded. From these measurements, the diffusion current model of gradually doped diode is proposed. This model shows that the diffusion current of the graded junction diode is 2 orders of magnitude smaller than that of the abrupt junction diode, which clearly explains the R₀A increase by the hydrogenation. Medicisimulation to investigate the change of LBIC signal by the doping grading also coincides with the measurements. From these measurements and model, the hydrogenation effects are attributed to the grading of Hg-vacancy doped p-type substrate by the diffused hydrogen.