导体球涂覆各向异性铁氧体介质电磁散射的解析解

该文用球矢量波函数对各向异性铁氧体介质涂覆导体球的电磁散射解析解开展研究。各向异性铁氧体介质中电磁场的球矢量波函数解可表示成第一、二、三、四类球矢量波函数之和。根据球Bessel函数的性质,可以得出导体球涂覆各向异性铁氧体介质的球矢量波函数解析解。应用铁氧体与自由空间分界面上电磁场切向连续和在导体球面上切向电场等于零的边界条件以及球矢量波函数切向正交性质,可分别得出铁氧体介质中电磁场和散射场的展开系数。给出了平面波入射情况下的数值计算结果。该文的结果可应用于有关微波器件、天线以及目标特征的分析和计算。     

阻抗球涂覆均匀等离子体电磁散射的解析解

均匀无源各向异性等离子体介质中的电磁场是第一、第二类各向异性等离子体球矢量波函数的线性叠加,在阻抗球表面满足阻抗边界条件、等离子体与自由空间表面满足电磁场切向连续的边界条件,可得出各向异性等离子体涂覆阻抗球在平面波入射情况下,均匀等离子体介质中电磁场用各向异性等离子体球矢量波函数表示的系数满足的矩阵方程,进而得出散射场由球矢量波函数展开的展开系数和雷达散射截面.数值计算的结果表明:当阻抗球的半径趋于0时,其结果和均匀各向异性等离子体球对平面波的电磁散射结果相同.最后还给出了一些数值计算的结果.     

两层旋电磁介质球电磁散射的球矢量波函数解

在均匀旋电磁介质球矢量波函数的基础上,利用球Bessel函数的特性,给出了两层旋电磁介质球内的电磁场用波函数表示的表达式.在平面波入射情况下,应用电磁场在球边界上切向电场和磁场连续与远区辐射条件,导出了两层各向异性旋电磁介质中电磁场用矢量波函数表示的展开函数所满足的方程组,求出了两层旋电磁介质球的散射场用均匀各向同性波函数展开的展开系数,进而得出了两层旋电磁介质球对平面波的电磁散射特性.理论分析和数值计算的结果表明:当两层旋电磁介质球的媒质参数相同时,本文所得的结果可退化为单层各向异性旋电磁体解析解.     

多层各向异性等离子体球电磁散射的解析解

给出s层各向异性等离子体球电磁场球矢量波函数解析表达式,应用电磁场在(s-1)层球壳边界上切向电磁场连续以及辐射条件,导出了平面波入射情况下,s层等离子体球电磁场的展开系数。将数值计算结果分别与矩量法-共扼梯度-傅里叶变换(MOM-CG-FFT)计算结果和均匀等离子体球的结果进行了比较,符合得较好。该文研究结果预期可应用于新型天线的研制和卫星通信等领域。     

两层各向异性介质球电磁散射球矢量波函数解

在无源各向异性铁氧体和等离子体介质的球矢量波函数基础上,利用第一、二类球Bessel 满足相同的微分方程和递推关系,给出了各向异性铁氧体球涂覆均匀等离子介质对平面波散射的理论公式,并给出数值计算的结果,预计本文结果可应用于微波器件以及目标特性等领域。     

单轴各向异性球对任意方向入射平面波的散射

基于球矢量波函数的正交完备性,给出了具有任意传播方向两种极化模式的平面波用球矢量波函数展开的形式,导出了其展开系数的具体表达式.研究了单轴各向异性介质球对任意方向入射平面波的散射,利用球矢量波函数及傅里叶变换方法得到了各向异性介质球的内场展开式,结合切向连续边界条件给出了散射系数.数值分析了介电常数张量元、有耗、无耗、尺寸参数、入射角和方位角等对单轴各向异性介质球的雷达散射截面的影响.     

在轴零阶贝塞尔波束对手征介质球的散射特性分析

贝塞尔波束自产生以来,凭借其无衍射、自修复特性已经获得了越来越多学者的关注。基于广义洛伦兹米理论, 将在轴贝塞尔波束与手征介质球相互作用的入射场及散射场展开为球矢量波函数的表达式。结合球矢量波函数的正交完备性及电磁场的连续性边界条件,推导出了在轴零阶贝塞尔波束对手征介质球电磁散射的解析解。数值模拟了散射强度随散射角的分布,将在轴贝塞尔波束退化为平面波照射手征介质球的散射结果与文献比较,吻合得较好。分析了波束及介质球参数、介质球偏离波束中心位置对散射强度的影响。该理论为手征材料和手征涂覆目标在微波工程及目标隐身中的应用提供了很好的理论应用价值。     

等离子体球对离轴高斯波束的电磁散射

基于高斯波束波形因子的局域近似解和电磁场的球矢量波函数展开方法,研究了离轴高斯波束入射均匀各向异性磁化等离子体球的电磁散射特性.数值计算了波束参数和粒子参数对雷达散射截面(RCS)随散射角分布的影响.分析了改变波束束腰半径和粒子偏离波束轴距离时,RCS的分布特点.结果表明:前向散射截面与束腰半径的变化成正比关系;束腰半径的变化对RCS随散射角分布有很大影响;球粒子偏离波束轴距离的大小影响RCS极值的位置和角分布特点.     

两媒质半空间复杂形体电磁散射

本文利用矢量波函数变换方法讨论了两媒质半空间的电磁散射问题，从Ｍａｘｗｅｌｌ方程出发，讨论了单矩法在三维复杂形体散射问题上的实施。并在数学球面上将内部区域的有限元解与外部区域矢量波函数变换的结果相匹配，从而得到复杂埋入体的电磁散射特性。作为检验和示例，本文计算了在平面波照射下自由空间导体球，埋入导体球，埋入介质覆盖钝锥等的散射场，其中一些结果与可供比较的经典解或其它算法的结果进行了比较，吻合较好。     

部分用直角坐标描述边界的波导和谐振腔电磁场分布的矢量直接解

本文利用矢量波函数求解了用直角坐标描述边界的矩形波导和谐振腔、部分填充介质矩形波导以及平行板和H型波导中电磁场模式分布,直接得到的矢量解与用常规方法得到的结果完全一致。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.