组合掺杂对低温烧结NiZn功率铁氧体功耗特性的影响

采用陶瓷工艺制备低温烧结Ni Zn软磁铁氧体材料,研究了掺杂Co_2O_3、Cu O、Bi_2O_3、V_2O_5、Si O_2等对材料烧结温度及主要磁性能如磁导率、功耗等的影响。结果表明,Bi2O3对降低材料烧结温度有益但对功耗改善无益,Si O2对功耗改善有益但效果不明显,而组合添加0.15mol%Co2O3、9.0mol%Cu O、0.40~0.50wt%V2O5不仅可达到大幅度降低材料功率损耗,改善功耗特性,而且可保证材料低温烧结和其它优良磁性能,并获得具有低温烧结(烧结温度900℃左右)、低功耗(功率损耗Pcv≤300k W/m3(20℃,1MHz,30m T))、适于LTCF工艺和片式功率器件应用的Ni Zn功率铁氧体材料。     

V2O5含量对MoO3-V2O5复合添加NiCuZn铁氧体性能的影响

用传统陶瓷工艺制备了(Ni0.16Cu0.2Zn0.64O)1.02(Fe2O3)0.98铁氧体材料,研究了MoO3-V2O5复合添加对材料烧结特性和磁性能的影响.结果表明,复合添加MoO3-V2O5能促进样品致密化、提高起始磁导率和降低功耗.当MoO3为0.15wt%、V2O5为0.15wt%时,930℃烧结起始磁导率(μi＞800)、功耗(305kW/m3)和密度(5.12 g/cm3)都达到较大值,比同样配方只掺杂MoO3的NiCuZn 材料明显提高.     

微波烧结高磁导率Mn-Zn铁氧体材料的研究

介绍了利用微波烧结技术小批量生产高磁导率Mn-Zn铁氧体的烧结工艺与设备.结果表明,微波加热方式不但大大优于传统加热方式,且利用微波烧结技术烧结的高磁导率Mn-Zn铁氧体材料的各项性能均达到或超过传统烧结方式的产品.     

V2O5含量对Bi2O3-V2O5复合添加NiCuZn铁氧体性能的影响

用传统陶瓷工艺制配了(Ni0.16Cu0.2Zn0.64O)1.02(Fe2O3)0.98铁氧体材料,研究了Bi2O3-V2O5复合添加对材料烧结特性和磁性能的影响.结果表明,复合添加bi2O3-V2O5能促进样品致密化、提高起始磁导率和品质因数.当添加0.3wt%Bi2O3、0.15wt%V2O5时,930℃烧结起始磁导率μi＞800、品质因数(94)、密度(5.12 g/cm3)都达到较大值,比同样配方只掺杂Bi2O3的NiCuZn材料明显提高.     

Co2+取代与Li+掺杂对NiCuZn铁氧体磁性能和直流叠加特性的影响

采用固相反应法制备了低温烧结NiCuZn铁氧体,研究了Co2+取代与Li+掺杂对NiCuZn铁氧体材料的饱和磁感应强度、剩磁、矫顽力、起始磁导率以及在直流偏置场下增量磁导率的影响.研究表明,适量的Co2+取代与Li1+掺杂会通过影响铁氧体材料的磁晶各向异性常数在一定程度上影响材料的磁导率.随着直流偏置场的增大,材料的磁...     

烧结温度对镍锌功率铁氧体磁性能的影响

为得到Zn含量不同时NiZn铁氧体材料的最佳烧结温度,用氧化物法制备了NiZn铁氧体材料,研究了烧结温度对材料起始磁导率、功耗、饱和磁感应强度和微结构的影响.结果表明,适宜的烧结温度对制备功耗低、饱和磁感应强度高和较优起始磁导率的NiZn铁氧体材料至关重要,而Zn含量不同时对应材料的最佳烧结温度也各不相同.     

Mg_(0.6)Cu_(0.1)Zn_(0.3)Fe_(2+x)O_(4+3/2x)铁氧体的结构和磁性能

分别采用过铁、正铁和缺铁配方通过固相反应法制备MgCuZn铁氧体,分析了Fe3+对铁氧体的磁性能和烧结特性的影响。微量缺铁有助于促进烧结并改善磁性能,过铁情况下,饱和磁化强度随x值增大迅速下降,在x=0.06处下降至38.84 A·m2/kg,相应的磁导率下降,截止频率向高频移动。并研究了微量V2O5掺杂对改善磁性能的作用,在掺杂量为0.4wt%处获得虚部损耗的有效提升(截止频率处提升近30%)。在此基础上探讨了MgCuZn铁氧体用作抗EMI磁珠的可行性,其低廉的价格相较于传统的Ni Zn/Ni Cu Zn铁氧体具有明显的优势。     

Co~(2+)替代对NiCuZn铁氧体电磁性能的影响

采用固相反应法制备了低温烧结NiCuZn铁氧体,研究了Co2+替代量对铁氧体材料显微结构、饱和磁感应强度、矫顽力以及在偏置磁场下磁导率和品质因数的影响。研究表明,对于低磁导率的NiCuZn铁氧体,适量Co2+替代可对铁氧体负的磁晶各向异性常数进行补偿,能在一定程度上提升材料的磁导率。在大直流偏置场的作用下,铁氧体的磁导率都出现明显的下降,而矫顽力是决定其增量磁导率的主要因素。     

Ni0.25Zn0.15Fe2.6O4种子层对NiZn铁氧体双层膜性能的影响

采用旋转喷涂法在Si(100)基片上制备Ni0.25Zn0.15Fe2.6O4(100 nm)铁氧体薄膜作为种子层,然后在种子层上采用射频磁控溅射法沉积Ni0.25Cu0.09Zn0.66Fe1.998O4(600 nm)铁氧体薄膜。研究了种子层对NiZn铁氧体双层膜微观形貌、饱和磁化强度、矫顽力、磁导率及截止频率的影响。结果表明,Ni0.25Zn0.15Fe2.6O4种子层的引入促进了NiZn铁氧体双层膜尖晶石相的晶化和晶粒生长。NiZn铁氧体双层膜的饱和磁化强度Ms为420 kA/m,矫顽力Hc为5.9kA/m,截止频率fr为1.37 GHz,磁导率μ’(300 MHz)高达202。     

烧结温度对掺Mn的NiZn铁氧体磁性能的影响

研究了烧结温度对掺杂6wt% MnCO3的Ni0.24Zn0.6Fe1.98O4铁氧体磁性能的影响.实验发现,在1220℃烧结时,此配方NiZn铁氧体能达到较好性能,其起始磁导率及品质因数均高,介电常数高频衰减减小,且材料的微观结构较好,晶粒平均粒径较大,晶粒中气孔少.     

Microwave Hydrothermally Synthesized Nanocrystalline Co-Zn Ferrites

Co-Zn ferrite nano-powder was synthesized using the Microwave- Hydrothermal (M-H) method. The powder was characterized using X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), and Fourier Transform Infrared spectroscopy (FT-IR). The densification of nanoferrites was done using two methods: a) conventional and b) microwave sintering. Electrical and magnetic properties of the sintered samples were measured at room temperature. Electrical properties such as dielectric constant (?'), dissipation factor (D), initial permeability (μ_i) and quality factor (Q) were measured over a wide frequency range (10 kHz to 1 MHz). The Curie temperature has been determined from the permeability versus temperature plots. It was found that the enhanced electrical and magnetic properties were observed for microwave sintered samples.     

TiO_2掺杂对高频MnZn功率铁氧体显微结构及磁性能的影响

采用氧化物陶瓷工艺制备2~4MHz高频开关电源用Mn Zn功率铁氧体,通过对铁氧体断面显微结构、密度和磁性能的测试,研究了TiO_2掺杂量对材料微观结构、磁导率和功率损耗的影响。结果表明,随着TiO_2掺杂量的增加,样品平均晶粒尺寸先减小后增大,磁导率单调减小,不同温度(25℃、100℃)下的磁心总功率损耗(激励条件3MHz,10m T、25m T)先减小后增大。说明TiO_2的适量掺杂可以改善高频Mn Zn功率铁氧体的微观结构,降低其功耗。     

烧结温度对超低损耗锰锌铁氧体性能的影响

使用同一配方制备得到的锰锌铁氧体坯件分别在1360℃、1330℃、1300℃下采用平衡气氛法烧结,制备得到致密的锰锌铁氧体磁环。SEM结果表明,降低烧结温度有效地减小了晶粒尺寸,消除了晶粒内部气孔,改善了晶粒均匀程度,使晶界更为清晰。电磁性能测试表明,在三种温度烧结得到的锰锌铁氧体材料的起始磁导率μi没有显著差异;饱和磁感应强度Bs随烧结温度降低有小幅上升;总功率损耗随烧结温度的降低而下降;并且在1300℃烧结的铁氧体材料的功率损耗(100k Hz/200m T,100℃)很低,约为255k W/m~3。通过损耗分离证实,总功率损耗的改善主要是涡流损耗大幅降低所致。     

Dielectric properties of Bi2O3–ZnO–Ta2O5 ceramics sintered by microwave

Here we report dielectric studies carried out on a Bi₂Zn_2/3Ta_4/3O₇ (abbreviated as β-BZT) composition. The material was synthesized by conventional ceramic method and microwave sintering processing. The dielectric properties were studied as a function of frequency and temperature. Dielectric constant of Bi₂Zn_2/3Ta_4/3O₇ ceramics prepared from microwave is slightly smaller than that of the conventional sintered ones. The dissipation factor and temperature coefficient of dielectric constant are low for microwave-sintered samples. Microwave sintering of Bi₂Zn_2/3Ta_4/3O₇ ceramics led to higher densification and the fine microstructure in much shorter time duration compared to conventional procedures, improved microstructure and dielectric properties. To achieve the same densification, it requires 4 h of soaking at the same temperature in conventional sintering process. Microwave sintering method may lead to energy savings because of rapid kinetics of synthesis.     

高磁导率MnZn铁氧体的氧化还原度调控与磁性能提升

采用氧化物陶瓷工艺制备MnZn铁氧体材料,研究了烧结过程氧分压及热处理氧分压对于其电磁性能的影响。实验表明,烧结过程中的氧分压P(O_2)越高,材料中的Fe²⁺含量越低,烧结体晶粒越大;氧分压的最佳范围在4~7%附近,过高或过低均会降低材料的磁性能。对于因氧分压偏离最佳范围导致磁性能低下的MnZn烧结体,可以通过后续的热处理工艺调节Fe²⁺含量以恢复其磁性能。根据这些结果,综合烧结工艺和热处理工艺的优势,采用21%的氧分压烧结获得较大的晶粒之后再在0.1%的氧分压气氛中热处理的方法调节铁氧体的Fe²⁺含量,获得了25℃时μi=10600,Bs=427 mT,μi(200 kHz)/μi(10 kHz)=98%,综合性能良好的高磁导率MnZn铁氧体磁芯。     

Electrical properties of conventional and microwave sintered lead free magnetoelectric composites

Abstract

Here we report comparison of dielectric properties of composition synthesized by microwave and conventional sintering. Microwave sintering requires less time and temperature to achieve the same quality of materials as sintered by conventional route. The material sample was prepared by conventional solid state method and sintered in conventional & microwave furnace. Sintered samples were then subjected to XRD analysis. X-ray diffraction revealed the formation of single phase material. The dielectric and ferroelectric properties were recorded for both the samples and properties were found to improve in microwave sintered samples. There is also a significant improvement in density by microwave processing.     

MoO3添加对高频MnZn功率铁氧体性能的影响

采用陶瓷工艺制备高频MnZn功率铁氧体材料,研究了MoO3添加对材料微结构和磁性能的影响。用X射线衍射仪(XRD)、扫描电子显微镜(SEM)表征材料结构,用B-H分析仪测试材料磁性能,并对材料功率损耗进行分离。结果表明,适量添加MoO3可以有效改善材料的微观结构,提高致密度,提高材料饱和磁通密度和起始磁导率,降低功率损耗。功耗分离后发现,随着MoO3添加量的增加,磁滞损耗比例下降,涡流损耗所占比例上升。最佳MoO3添加量为0.01 wt%,获得低功耗的MnZn功率铁氧体,100℃、500kHz、50mT条件下功耗为86 kW/m3,起始磁导率约为1928,25℃下的饱和磁通密度为513 mT。     

Ni-Cu-Zn Ferrites for low temperature firing: II. Effects of powder morphology and Bi2O3 addition on microstructure and permeability

The morphology of Ni-Cu-Zn ferrite powders obtained by milling of a calcined raw materials mixture strongly effects the densification behavior during sintering at 900^∘C. In order to obtain dense samples sub-micron powders with enhanced reactivity are required. The addition of Bi₂O₃ as sintering additive is beneficial: the density of samples sintered at 900^∘C increases with the bismuth oxide concentration up to 0.75 wt.%. The process of liquid phase sintering was studied by dilatometry. The grain size of the sintered samples slightly increases for 0.25 wt.% Bi₂O₃ compared to bismuth-free samples, whereas for 0.3–0.5 wt.% Bi₂O₃ additions bimodal grain growth is observed with a significant fraction of very large grains. For > 0.5 wt.% Bi₂O₃ a homogeneous coarse-grained microstructure is obtained. The permeability increases for small bismuth oxide additions, but decreases for a Bi-oxide content of more than 0.5%. Maximum permeability of μ_i = 900 is observed for intermediate Bi₂O₃ concentrations. PACS codes: 75.50 Gg; 81.20 Ev; 81.40 Rs     

旋磁铁氧体材料的微波烧结及在环行器中的应用研究

对微波烧结旋磁铁氧体材料进行了初步实验,检测和分析了烧成的材料和由其制成的环行器的主要技术参数,并与传统烧结材料进行了对比.结果表明,微波烧结旋磁铁氧体材料介电损耗较低,用其制作的环行器满足设计要求,损耗减小.该烧结方法具有一定的优越性.     

正交实验法优化降温速率制备高磁导率高饱和磁通密度MnZn铁氧体研究

采用正交实验研究了不同降温段的降温速率对MnZn铁氧体磁导率温度稳定性的影响,并在此基础上优化了降温曲线。结果表明,通过正交实验法优化降温曲线,可以制备更加均匀显微结构和较大晶粒尺寸的样品,从而成功地制备得到了高磁导率(μi)高饱和磁通密度(Bs)锰锌铁氧体材料。当降温段1350~1150℃、1150~1000℃和1000~700℃的降温速率分别为0.83℃/min、5.0℃/min和5.0℃/min时,烧结的MnZn铁氧体具有均匀的微观结构和优良的磁性能。此时,烧结体在0~190℃温度区间和应用频率f≤530k Hz时保持高磁导率(μi5000),同时在常温下具有高的饱和磁通密度Bs=530 m T。