Electron Emission Properties of Surface-Conduction Electron Emitters With a PdO-C-PdO Multilayer Conductive Film Deposited by Magnetron Sputtering

Conductive films are an essential component in surface-conduction electron emitters (SCEs), and they have a major influence on the electron emission properties of SCEs. In this work, a novel PdO-C-PdO multilayer film deposited by magnetron sputtering is proposed as the conductive film in SCEs. Three SCE cathodes with this type of multilayer film were fabricated, together with three other SCE cathodes with a PdO single-layer film used as a reference. For these cathodes, the dependences of the conduction current and the emission current on the device voltage and the anode voltage were measured, and the luminescence patterns were observed after the electroforming and activation processes of the conductive films had occurred. The surface morphologies of the conductive films were analyzed by scanning electron microscopy. The results indicate that the SCEs with the PdO-C-PdO multilayer conductive film have better electron emission properties compared with the SCEs with the PdO single-layer conductive film. For an anode voltage of 2 kV and a device voltage of 14 V, the emission current and the electron emission ratio of the SCEs with the PdO-C-PdO multilayer film can reach 179.5 μA and 2.2‰, respectively.     

真空荧光显示器亮度特性的研究

为了确定真空荧光显示器(Vacuum Fluorescent Display,VFD)亮度特性(灯丝发射电流、电流分配系数、发光效率和亮度)与阳极电压的关系,缩短开发时间并提高新品开发的成功率,选取8种常见颜色荧光粉制作了8种型号的VFD实验样品,实测每个步长阳极电压下的灯丝发射电流、阳极电流以及亮度数据,利用最小二乘法得到了灯丝发射电流随阳极电压变化的关系,采用右逼近法分别给出了电流分配系数及发光效率的威布尔拟合公式,最终确定了亮度随阳极电压变化的计算表达式。研究结果表明,实验设计方案切实可行,灯丝发射电流、电流分配系数及发光效率随阳极电压变化的拟合公式精确度很高,亮度的计算值与实验值相比误差很小,便于在设计之初只需根据阳极电压设计值就能够获得VFD的亮度特性,为VFD的结构优化设计提供重要的理论依据和技术参考。     

采用碳纳米管导电薄膜作为OLED的阳极

采用碳纳米管(CNT)替代ITO作为OLED阳极可以 解决ITO薄膜存在的可弯曲性能差,可靠性低等缺 点,使得柔性显示成为可能。本文采用混合型CNT导电薄膜作为阳极,探讨了CNT薄膜的制备 工艺、掺 杂方式及表面修饰等因素对绿光OLED性能的影响。实验结果表明,P型掺杂对CNT薄 膜的导电性能影响 有限;而PEDOT修饰层可以很好的提高CNT导电薄膜的平整度;此外,采用“十字交叉 ”的阳极形状有助于降低 阳极拐角处毛刺。通过优化器件各参数,制备的PET/CNTs/PEDOT/NPB/ALq₃/LiF/Al绿光OL ED发光效率达 到了195 cd/m²,结果表明采用混合型CNT作为OLED阳极是可行的。     

A New AC Plasma Display Panel With Auxiliary Electrode for High Luminous Efficacy

A new ac plasma display panel (PDP) for high luminous efficacy is proposed, and its characteristics are investigated. The new ac PDP has a coplanar gap of 200 mum and an auxiliary electrode located between the scan and common electrodes. The periodic pulses are applied to the auxiliary electrode during the sustain period, which plays the roles of enhancing the infrared emission and reducing the discharge current. The sustain voltage decreases with the increase of the auxiliary pulse voltage until 80 V. When the voltage of the pulse applied to the auxiliary electrode is 50 V, the luminous efficacy reaches its peak value and is approximately 8.7 lm/W obtained from the measurement of Ne + 20% Xe gas-mixture discharges in the green cells. The luminous efficacy of the new proposed test ac PDP with Ne + 13% Xe and Ne + 20% Xe gas mixtures is improved by 190% and 320%, respectively, compared to that of the conventional ac PDP with a Ne + 13% Xe gas mixture     

电泳法制备平栅极碳纳米管场发射阴极及场发射特性研究

采用电泳法在ITO玻璃基板上选择性制备了碳纳米管(CNTs)阴极薄膜,采用电子扫描(SEM)分析了CNTs薄膜的表面形貌,并测试了碳纳米管阴极的场致发射特性.结果表明,利用电泳法制得的碳纳米管阴极薄膜均匀性、致密性良好,且具有较大发射电流密度;通过控制共面栅控CNTs场发射阴极的栅极电位能够有效控制阴极的场发射电流密度...     

All‐Carbon Nanotube‐Based Flexible Field‐Emission Devices: From Cathode to Anode

The fabrication of a flexible field‐emission device (FED) using single‐walled carbon nanotube (SWNT) network films as the conducting electrodes (anode and cathode) and thin multi‐walled CNT/TEOS hybrid films as the emitters is reported. P‐type doping with gold ions and passivation with tetraethylorthosilicate (TEOS) made the SWNT network film highly conductive and environmentally stable, and hence a good alternative to conventional indium tin oxide electrodes. CNT/TEOS hybrid emitters showed high current density, low turn‐on field, and long‐term emission stability, compared with CNT emitters; these characteristics can be attributed to the TEOS sol, acting both as a protective layer surrounding the nanotube tip, and as an adhesive layer enhancing the nanotube adhesion to the substrate. All‐CNT‐based flexible FEDs fabricated by this approach showed high flexibility in field emission characteristics and extremely bright electron emission patterns.     

Improvement of luminance and luminous efficiency using addressvoltage pulse during sustain-period of AC-PDP

To improve the luminance and luminous efficiency of a surface-discharge alternate current plasma display panel (ac PDP), auxiliary voltage pulses were applied to the address electrode during a sustain-period. The luminance and luminous efficiency exhibited maximum values at an address voltage of 100 V and pulse width of 1 μs. An improved luminance of 21.4% and luminous efficiency of 24% were simultaneously obtained based on the proper adjustment of the widths and amplitudes of the address voltage pulse. Accordingly, the proper control of the amplitudes and pulse widths of the auxiliary address voltage during a sustain-period can improve both the luminance and the luminous efficiency in a surface-discharge ac PDP     

Fabrication and field emission characteristics of a novel planar-gate electron source with patterned carbon nanotubes for backlight units

This paper describes the fabrication of backlight units(BLUs) for a liquid crystal display(LCD) based on a novel planar-gate electron source with patterned carbon nanotubes(CNTs) formed by electrophoretic deposition. The electric field distributions and electron trajectories of this triode structure are simulated according to Ansys software.The device structure is optimized by supporting numerical simulation.The field emission results show that the emission current depends strongly on the cathode-gate gap and the gate voltage.Direct observation of the luminous images on a phosphor screen reveals that the electron beams undergo a noticeable expansion along the lateral direction with increasing gate voltage,which is in good agreement with the simulation results.The luminous efficiency and luminance of the fabricated device reaches 49.1 lm/W and 5500 cd/m2,respectively.All results indicate that the novel planar-gate electron source with patterned CNTs may lead to practical applications for an electron source based on a flat lamp for BLUs in LCD.     

钼尖场致发射阵列阴极的性能研究

利用微细加工技术和双向薄膜沉积技术对钼尖场发射阵列阴极的工艺进行了较为细致的研究，并在专用的真空系统中对所得阵列阴极的发射性能进行了测试，得到了一定的场致发射电流密度值。测试中采用数据采集系统监测栅极电压、阳极电压、阳极电流和栅极电流，测量了阴极阵列的发射稳定性和发射噪声。对发射的失效机理进行了实验研究和分析，认为发射失效的主要原因在于栅极和基底之间的漏电，尖锥和棚极孔间的暗电流，电极间的放电和放气，以及环境真空度和尖锥的均匀性等。所得结果以进一步开展有射频器件和显示器件方面的应用研究打下了一定基础。     

GaN基白光LED温度特性实验研究

实验研究了恒流驱动条件下,GaN基白光LED的正向电压、发光光谱和发光效率随环境温度的变化情况.结果表明,在输入电流恒定的情况下,随着温度的升高,结电压和发光强度与温度具有良好的线性关系,并且GaN基白光LED的发光颜色总是向蓝光漂移,而小电流驱动时比大电流驱动时蓝光漂移更明显.根据实验结果,分析了器件的最佳额定工作电流.

Abstract：

Under a constant driving current, the changes of the forward voltage, emission spectrum and luminous efficiency of GaN-based White LEDs with the ambient temperature are studied experimentally. It is found that the forward voltage and the luminous intensity depend on the temperature linearly with constant injection current, and luminous colors of GaN-based White LEDs always shift towards blue. And the blue shift with low driving current is more obvious than that with high driving current. According to the results, the best rated operating current of GaN-based white LEDs is discussed.     

一代前景诱人的新型器件——真空微电子管

描述了真空微电子器件的发展概况，特别对场发射阵列的结构设计进展、微波用场发射阵列研究、低压场发射阵列研究以及场发射平板显示器的现状进行了全面阐述。     

GaN基蓝光大功率发光二极管的研制

采用一种自对准制造工艺和倒装芯片的装配技术,研制出GaN基蓝光大功率发光二极管(1mm×1mm)。其光学参数：总辐射功率143．19mW,光通量8．861m,发光效率7．291m/W,峰值波长462nm,半峰全宽24nm;其电学参数：正向电压3．47V、正向电流350mA。对相关工艺进行了简要讨论。     

Vacuum arc ion currents and electrode phenomena

Properties of dc vacuum arcs between copper electrodes are studied in both a vacuum interrupter and a metal walled arc chamber. Maximum ion currents of ∼8 to 20 percent of the arc current (100 to 3000 A) are drawn from the diffuse arc plasma when the bounding metal wall or shield is biased negative. This maximum ion current is a fundamental arc property independent of wall diameter, anode diameter, and electrode spacing. The geometric dependence of the wall ion current, together with observations of isotropic vapor and ion emission from the cathode, indicates that the cathode regions adjacent to the cathode spots are the predominant sources of ionization for the plasma. Assuming single ionization, 55 percent of the vapor leaving these regions is ionized. Starvation phenomena in the anode region remote from the cathode spots lead to anode voltage drop and anode spot formation. Post arc currents reveal a mean ion speed during arcing of ≈8×10⁵cm/s. This mean speed may be acquired in the cathode region by acceleration from a potential maximum.     

脉冲激光沉积非晶碳-聚酰亚胺复合薄膜的场致电子发射研究

利用脉冲激光沉积技术制备出非晶碳-聚酰亚胺复合薄膜,并观察到其场发射阈值场强(4V/μm)比类金刚石薄膜(>12V/μm)有较大的降低,最大发射电流密度为1.2mA/cm~2.利用透明导电薄膜阳极技术可观察电子在薄膜阴极表面的发射位置.并对该复合薄膜的场电子发射机理进行了初步探讨.实验表明该复合薄膜有可能作为一种新型的场发射冷阴极材料.在平面显示器件中得到应用.     

含碳气氛对表面传导电子发射显示器发射性能的影响

采用实验的方法,研究了含碳气氛下表面传导电子发射显示器(SED)的电子发射性能.通过测量和比较普通真空环境与含碳气氛下电子发射的特性参数发现,通入含碳气氛能明显提高电子发射性能,器件电流If和发射电流Ie的值在通入含碳气氛后明显改变,表面传导电子发射效率ρ也明显提高.     

硅场发射三极管的研究

简单介绍了硅场发射三极管的制造，三极管的Ｉ－Ｖ特性，在实验和理论上研究了栅门高度对发射电流的影响。     

Efficiency enhancement of organic light-emitting devices by using honeycomb metallic electrodes and two-dimensional photonic crystal arrays

In this paper, a facile fabrication technique called nanosphere lithography combining with two-step reactive ion etching method for patterning honeycomb metallic electrode with high transparency and excellent uniformity is demonstrated. The patterning silver electrode with 15-nm film thickness and 68.6% fill-factor was used as the organic light-emitting diode (OLED) anode, which showed an average transmittance of 77.4% and sheet resistance of 30.7 Ω/□. The current efficiency is 8.35 cd/A for the OLED with patterned silver anode under 100 cd/m² operation brightness, which was 47% higher than the device with indium tin oxide (ITO) anode. After applying the polystyrene nanosphere to form a photonic crystal array onto the device, the extracted light from organic mode can be further coupled out from device substrate mode. The overall luminous enhancement of the device with the combination of internal honeycomb metallic anode and external photonic crystal array is 115% higher than the traditional ITO-based OLED.     

Rate equation of current degradation of the Spindt-type field emitter array

The degradation rate of the emission current of the Spindt-type field emitter arrays in the display environment has been measured. The relative degradation rate is found to be a function of the square of emission current and proportional to the anode bias (voltage). A life model is presented that leads to development of an analytical rate equation of emission current degradation. Based on this model, there is a steady-state level at which the emission current is stable. The steady-state emission current depends on anode bias, background pressure in the package and cleanliness of anode and cathode surfaces. Experimental results are consistent with the rate equation derived from the model. Since the model does not include any material and process that make the cathode, it could probably apply to any field emission cathodes.     

电泳法制备四针状纳米ZnO场发射阴极

用电泳法成功地将四针状纳米ZnO沉降在透明导电玻璃ITO衬底上,制备出13cm×10cm面积的场发射阴极屏。使用扫描电子显微镜观察ZnO颗粒的表面形貌及分散均匀性。结果表明电泳法制得的ZnO场发射阴极屏透明且颗粒分布较均匀。讨论了电泳电压、沉降时间、电泳液浓度对阴极场发射电流的影响,通过实验得出用电泳法转移四针状纳米氧化锌制作阴极屏的最佳工艺条件,即直流电压75V、电泳时间为8min,两极距离2.5cm条件下制得的屏场发射性能较佳,显示效果较好。测试了ZnO阴极屏在1200V直流电压下长时间发射稳定性,测试过程电流波动范围小于5%。实验表明采用电泳法制备场发射阴极具有工艺简单、步骤少、易操作、成本低并能根据需要控制薄膜厚度及场发射屏面积等优点,对于大屏幕、低成本FED的研发具有实际应用意义。     

Enhancement of electron emission efficiency and stability ofmolybdenum-tip field emitter array by diamond like carbon coating

The effect of diamond like carbon (DLC) films, coated by a layer-by-layer technique using PECVD (plasma enhanced chemical vapor deposition) on the electron emission characteristics of molybdenum (Mo)-tip field emitter array (FEA) is examined. The turn-on voltage was lowered from 80 V for the Mo-tip to 65 V for the DLC-coated Mo-tip FEA while the maximum emission current was increased from 140 μA for the Mo-tip to 320 μA for the DLC-coated Mo-tip FEA composed of 900 emitters. For an anode current of 0.1 (μA/emitter) the gate voltage for the DLC-coated Mo-tip FEA and Mo-tip FEA was about 87 and 107 V, respectively. It was also confirmed that the emission current of a DLC-coated Mo-tip FEA was more stable than that of a Mo-tip FEA