Ultrahigh Q values and atmosphere-controlled sintering of Li2(1+x)Mg3ZrO6 microwave dielectric ceramics

Ultrahigh-Q Li_2(1+x)Mg₃ZrO₆ microwave dielectric ceramics were successfully prepared by means of atmosphere-controlled sintering through simultaneously adopting double crucibles and sacrificial powder. This technique played an effective role in suppressing the lithium volatilization and further promoting the formation of the liquid phase, as evidenced by the X-ray diffraction, microstructural observation and the density measurement. Both dense and even microstructure, and the suppression of detrimental secondary phases contributed to low-loss microwave dielectric ceramics with Q×f values of 150,000–300,000 GHz. Particularly, desirable microwave dielectric properties of ε_r=12.8, Q×f=307,319 GHz (@9.88 GHz), and τ_f=−35 ppm/°C were achieved in the x=0.06 sample as sintered at 1275 °C for 6 h.     

Effects of sintering parameters and Nd doping on the microwave dielectric properties of Y2O3 ceramics

Y₂O₃ ceramics with good dielectric properties were prepared via co-precipitation reaction and subsequent sintering in a muffle furnace. The effects of Nd doping and sintering temperature on microwave dielectric properties were studied. With the increase in sintering temperature, the density, quality factor (Q×f), and dielectric constant (ε_r) values of pure Y₂O₃ ceramics increased to the maximum and then gradually decreased. The Y₂O₃ ceramics sintered at 1500 °C for 4 h showed optimal dielectric properties: ε_r=10.76, Q×f=82, 188 GHz, and τ_f=−54.4 ppm/°C. With the addition of Nd dopant, the Q×f values, ε_r, and τ_f of the Nd: Y₂O₃ ceramics apparently increased, but excessive amount degraded the quality factor. The Y₂O₃ ceramics with 2 at% Nd₂O₃ sintered at 1460 °C displayed good microwave dielectric properties: ε_r=10.4, Q×f=94, 149 GHz and τ_f=−46.2 ppm/°C.     

Structure and dielectric properties of novel low temperature co-fired Bi2O3-RE2O3-MoO3 (RE=Pr,Nd, Sm,and Yb) based microwave ceramics

Novel monoclinic Bi₂O₃-xRE₂O₃-yMoO₃ (RE=Pr, Nd, Sm, and Yb) based low temperature co-fired ceramics (LTCC) systems with high sintering density and low microwave dielectric loss are synthesized by conventional solid state reaction technique. The structure and dielectric properties of Bi₂O₃-xRE₂O₃-yMoO₃ ceramics are investigated. Dense BiNdMoO₆ ceramics sintered at 900 °C for 8 h in air have a low dielectric constant ε_r=~7.5, a high quality factor Q×f=~ 24, 800 GHz at 7.0 GHz, and τ_f=~−16 ppm/̊C. Especially, good chemical compatibility of BiNdMoO₆ with Ag electrodes is represented as well. In contrast, BiSmMoO₆ ceramics sintered at 1000 °C for 8 h show enhanced Q×f=~43, 700 GHz at 7.8 GHz with ε_r=~8.5 and τ_f=~−27 ppm/°C. Bi₂O₃-xRE₂O₃-yMoO₃ (RE=Pr, Nd, Sm, and Yb) based ceramics could be considered as promising microwave ceramics for LTCC applications.     

Sintering behavior and microwave dielectric properties of Ca1-xBixW1-xVxO4 ceramics

Structure, sintering behavior and microwave dielectric properties of ceramics have been investigated by x-ray powder diffraction (XRD) and scanning electron microscopy (SEM) in this paper. The microwave dielectric properties of the ceramics were studied with a network analyzer at the frequency of about 6–11 GHz. The sintering temperature and microwave dielectric properties could be successfully tuned in a wide window simultaneously by adjusting the A–O bond characteristics. The sintering temperature of CaWO₄ was successfully reduced from 1100 °C to about 950 °C by BiVO₄ addition. Approximately 95%–96% theoretical density could be obtained after sintering at 950 °C for 2 h. All samples exhibit single Scheelite structure (I4₁/a) phase. The dielectric constant increased, whereas the Q×f value decreased, with the increase of x. The τ_f value changed from negative to positive with the increases of x. Combined excellent microwave dielectric properties with ε_r=22. 1, Q×f=16,730 GHz and τ_f=2.39 ppm/°C could be obtained after sintered at the 950 °C for 2 h for x=0.3 compositions.     

Microwave dielectric properties of Re3Ga5O12 (Re: Nd,Sm, Eu,Dy and Yb) ceramics and effect of TiO2 on the microwave dielectric properties of Sm3Ga5O12 ceramics

Re₃Ga₅O₁₂ (Re: Nd, Sm, Eu, Dy and Yb) garnet ceramics sintered at 1350–1500 °C had a high quality factor (Q × f) ranging from 40,000 to 192,173 GHz and a low dielectric constant (ɛ_r) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τ_f) in the range of −33.7 to −12.4 ppm/°C. In order to tailor the τ_f value, TiO₂ was added to the Sm₃Ga₅O₁₂ ceramics, which exhibited good microwave dielectric properties. The relative density and grain size increased with addition of TiO₂, resulting in the enhancement of Q × f value. The τ_f increased with the addition of TiO₂. Excellent microwave dielectric properties of ɛ_r = 12.4, Q × f = 240,000 GHz and τ_f = −16.1 ppm/°C were obtained from the Sm₃Ga₅O₁₂ ceramics sintered at 1450 °C for 6 h with 1.0 mol% TiO₂. Therefore, Re₃Ga₅O₁₂ ceramics, especially TiO₂-added Sm₃Ga₅O₁₂ ceramics are good candidates for advanced substrate materials in microwave integrated circuits (MICs) applications.     

Structure and properties of low temperature sintered ZnTa2O6 microwave dielectric ceramics

ZnTa₂O₆ microwave dielectric ceramics have been prepared using ZnTa₂O₆ nano-powders synthesized by sol–gel processing in this study. The crystal structure and microstructure of the ZnTa₂O₆ powders and ceramics were characterized by XRD and SEM techniques. ZnTa₂O₆ ceramics can be densified at a lower sintering temperature of 1200 °C. Microwave dielectric properties show that both of Q × f and ?_r values are lower than those of ceramics prepared by solid state route, and the τ_f values do not show different from that of solid state route. ZnTa₂O₆ ceramics sintered at 1200 °C exhibit good microwave dielectric properties: Q × f = 50,600 GHz, ?_r = 35.12 and τ_f = 9.69 ppm/°C.     

Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Zn1/3Nb2/3)O3 ceramics

The B₂O₃ added Ba(Zn_1/3Nb_2/3)O₃ (BBZN) ceramic was sintered at 900 °C. BaB₄O₇, BaB₂O₄, and BaNb₂O₆ second phases were found in the BBZN ceramic. Since BaB₄O₇ and BaB₂O₄ second phases have an eutectic temperature around 900 °C, they might exist as the liquid phase during sintering at 900 °C and assist the densification of the BZN ceramics. Microwave dielectric properties of dielectric constant (ɛ_r) = 32, Q × f = 3500 GHz, and temperature coefficient of resonance frequency (τ_f) = 20 ppm/°C were obtained for the BZN with 5.0 mol% B₂O₃ sintered at 900 °C for 2 h. The BBZN ceramics were not sintered below 900 °C and the microwave dielectric properties of the BBZN ceramics sintered at 900 °C were very low. However, when CuO was added, BBZN ceramic was well sintered even at 875 °C. The liquid phase related to the BaCu(B₂O₅) second phase could be responsible for the decrease of sintering temperature. Good microwave dielectric properties of ɛ_r = 36, Q × f = 19,000 GHz and τ_f = 21 ppm/°C can be obtained for CuO doped BBZN ceramics sintered at 875 °C for 2 h.     

Anti-reduction of Ti4+ in Ba4.2Sm9.2Ti18O54 ceramics by doping with MgO,Al2O3 and MnO2

The anti-reduction of Ti⁴⁺ ions in Ba_4.2Sm_9.2Ti₁₈O₅₄ (BST) ceramics at high sintering temperature over 1300 °C was investigated. MgO, Al₂O₃ and MnO₂ were added separately to suppress the reduction of Ti⁴⁺ ions so as to improve the microwave dielectric properties of BST ceramics. The microstructure of BST ceramics was analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). X-ray photoelectron spectroscopy (XPS) was used to study the electroconductivity of BST ceramics and valency changes of Ti ions. The results showed that MgO or Al₂O₃, when acting as an acceptor, could effectively suppress the reduction of Ti⁴⁺ ions and significantly improve the Q × f values of BST ceramics at the cost of dielectric constant. Meanwhile, MnO₂ as an oxidant had also improved the Q × f values but with no decrease in dielectric constant. Excellent microwave dielectric properties were achieved in Ba_4.2Sm_9.2Ti₁₈O₅₄ ceramics doped with 0.2 wt.% Al₂O₃ sintered at 1340 °C for 3 h: ?_r = 76.9, Q × f = 10,120 GHz and τ_f  = ?22.7 ppm/°C.     

Phase structure,band gap and microwave dielectric properties of Ba8Ti3Nb4−xSbxO24 ceramics

High dielectric constant and low loss ceramics in the Ba₈Ti₃Nb_4?xSb_xO₂₄ (x=0–2) system were prepared by conventional solid-state ceramic route. As x increased from 0 to 1.5, a single phase with hexagonal 8H perovskite structure was formed and the band gap values increased from 3.38 to 3.47 eV. However, the Sb₂O₃ secondary phase was detected as the x reached 2. The optimum sintering temperature was reduced from 1460 to 1380 °C, the quality factors (Q×f) were effectively enhanced from 22,900 to 38,000 GHz and τ_f was significantly lowered from 110 ppm/°C to 2 ppm/°C, whereas the dielectric constant decreased from 49 to 35. A good combined microwave dielectric properties with ε_r=37.5, Q×f=38,000 GHz, τ_f=15 ppm/°C were obtained for x=1.5.     

Influence of Li2O–B2O3–SiO2 glass on the sintering behavior and microwave dielectric properties of BaO–0.15ZnO–4TiO2 ceramics

This paper reports the investigation of the performance of Li₂O–B₂O₃–SiO₂ (LBS) glass as a sintering aid to lower the sintering temperature of BaO–0.15ZnO–4TiO₂ (BZT) ceramics, as well as the detailed study on the sintering behavior, phase evolution, microstructure and microwave dielectric properties of the resulting BZT ceramics. The addition of LBS glass significantly lowers the sintering temperature of the BZT ceramics from 1150 °C to 875–925 °C. Small amount of LBS glass promotes the densification of BZT ceramic and improves the dielectric properties. However, excessive LBS addition leads to the precipitation of glass phase and growth of abnormal grain, deteriorating the dielectric properties of the BZT ceramic. The BZT ceramic with 5 wt% LBS addition sintered at 900 °C shows excellent microwave dielectric properties: ε_r=27.88, Q×f=14,795 GHz.     

The effect of sintering temperature and time on microwave properties of Sm(Zn1/2Ti1/2)O3 ceramics for resonators

The microwave dielectric properties of Sm(Zn_1/2Ti_1/2)O₃ ceramics have been investigated. Sm(Zn_1/2Ti_1/2)O₃ ceramics were prepared by conventional solid-state route with various sintering temperatures and times. The prepared Sm(Zn_1/2Ti_1/2)O₃ exhibited a mixture of Zn and Ti showing 1:1 order in the B-site. Higher sintered density of 7.01 g/cm³ can be produced at 1310 °C for 2 h. The dielectric constant values (ɛ_r) of 22–31 and the Q × f values of 4700–37,000 (at 8 GHz) can be obtained when the sintering temperatures are in the range of 1250–1370 °C for 2 h. The temperature coefficient of resonant frequency τ_f was a function of sintering temperature. The ɛ_r value of 31, Q  ×  f value of 37,000 (at 8 GHz) and τ_f value of −19 ppm/°C were obtained for Sm(Zn_1/2Ti_1/2)O₃ ceramics sintered at 1310 °C for 2 h. For applications of high selective microwave ceramic resonator, filter and antenna, Sm(Zn_1/2Ti_1/2)O₃ is proposed as a suitable material candidate.     

Microwave dielectric properties and compatibility with silver electrode of novel low-fired Ba4CuTi11O27 ceramic

A novel low-fired microwave dielectric ceramic with composition of Ba₄CuTi₁₁O₂₇ was prepared by a conventional solid-state reaction method. A single-phase Ba₄CuTi₁₁O₂₇ ceramic could be well densified after sintering above 950 °C for 4 h in air. A refinement using X-ray powder diffraction data was carried out in the Rietveld method using the parameters of Ba₄Ti₁₂O₂₇ as a starting model. Ba₄CuTi₁₁O₂₇ ceramic sintered at 975 °C has a monoclinic structure (C12/m1) with lattice parameters of a=19.8061(4) Å, b=11.4456(2) Å, c=9.9131(2) Å, β=108.8988(15) Å, V=2126.08(8) Å³, Z=4. The Ba₄CuTi₁₁O₂₇ ceramics exhibited a low sintering temperature (~975 °C) and good microwave dielectric properties with Q×f value of 15,040 GHz, ε_r of 36.3 and τ_f value 11.9 ppm/°C. More importantly, the Ba₄CuTi₁₁O₂₇ dielectrics demonstrated good chemical compatibility with Ag when sintered at 950 °C, keeping excellent microwave dielectric properties with Q×f=12,130 GHz, ε_r=36.1, τ_f=12.1 ppm/°C, which indicates that Ba₄CuTi₁₁O₂₇ ceramic is a candidate for LTCC devices.     

Densification,microstructure evolution,and microwave dielectric properties of Mg1-xCaxZrTa2O8 ceramics

In this study, the effects of the Mg²⁺ ions replaced by Ca²⁺ ions on the microwave dielectric properties of newly developed MgZrTa₂O₈ were investigated. Mg_1-xCa_xZrTa₂O₈ (x = 0–1.0) ceramics were prepared via a solid-state reaction method. Calcination of the mixed powders was performed at 1200 °C and sintering of the powder compacts was accomplished at temperatures from 1200 to 1550 °C. The substitution of Ca²⁺ significantly inhibited the densification of Mg_1-xCa_xZrTa₂O₈, led to the expansion of the unit cells, and triggered the formation of a second phase, CaTa₂O₆. The porosity-corrected relative permittivity increased almost linearly with the x value because of the replacement of the less polarizable Mg²⁺ ions by the more polarizable Ca²⁺ ions. The variation in the Q × f values followed a similar trend as that of the sintered density, and the change trend in the τ_f values was in accordance with that of relative permittivity. The best composition appeared to be Mg_0.9Ca_0.1ZrTa₂O₈, which showed excellent microwave dielectric properties of ε_r = 22.5, Q × f = 231,951 GHz, and τ_f = −32.9 ppm/°C. The Q × f value obtained is the highest among the wolframite dielectric ceramics reported in literature.     

Structure and microwave dielectric properties of Ba1−xSrxMg2V2O8 ceramics

The Ba_1−xSr_xMg₂V₂O₈ (0≤x≤0.4) microwave dielectric ceramics were fabricated by a standard solid-state reaction method. The formation of a continuous solid solution within the whole composition range was identified. The ceramic samples could be well densified in the temperature range of 885–975 °C in air for 4 h. The permittivity ε_r was found to increase with increasing ionic polarizabilities. The Q×f values were believed to be closely related with packing fraction and grain refinement. The Sr²⁺ substitution contributed to a monotonous increase of the A-site bond valence, such that the τ_f value experienced a considerable variation from negative to positive values. The optimum microwave dielectric properties of an ε_r of 13.3, a high Qxf of 86,640 GHz (9.6 Hz) and a near-zero τ_f of −6 ppm/°C could be yielded in the x=0.15 sample when sintered at 915 °C for 4 h.     

Microwave dielectric properties of LiNb3O8 ceramics with TiO2 additions

The microwave dielectric properties of LiNb₃O₈ ceramics were investigated as a function of the sintering temperature and the amount of TiO₂ additive. LiNb₃O₈ ceramics, which were calcined at 750 °C and sintered at 1075 °C for 2 h, showed a dielectric constant (ɛ_r) of 34, a quality factor (Q × f₀) of 58,000 GHz and a temperature coefficient of resonance frequency (τ_f) of −96 ppm/°C, respectively. The density of the samples influenced the properties of these properties. As the TiO₂ content increased in the LiNb₃O₈–TiO₂ system, ɛ_r and τ_f of the material were increased due to the mixing effect of TiO₂ phase, which has higher dielectric constant and larger positive τ_f. The 0.65LiNb₃O₈–0.35TiO₂ ceramics showed a dielectric constant ɛ_r of 46.2, a quality factor (Q × f₀) of 5800 GHz and a temperature coefficient of resonance frequency τ_f of near to 0 ppm/°C.     

Microwave dielectric properties and low-temperature sintering of Ba3Ti4Nb4O21 ceramics with B2O3 and CuO additions

The low sintering temperature and the good dielectric properties such as high dielectric constant (ɛ_r), high quality factor (Q × f) and small temperature coefficient of resonant frequency (τ_f) are required for the application of chip passive components in the wireless communication technologies. In the present study, the sintering behaviors and dielectric properties of Ba₃Ti₄Nb₄O₂₁ ceramics were investigated as a function of B₂O₃–CuO content. Ba₃Ti₄Nb₄O₂₁ ceramics with B₂O₃ or CuO addition could be sintered above 1100 °C. However, the additions of both B₂O₃ and CuO successfully reduced the sintering temperature of Ba₃Ti₄Nb₄O₂₁ ceramics from 1350 to 900 °C without detriment to the microwave dielectric properties. From the X-ray diffraction (XRD) studies, the sintering behaviors and the microwave dielectric properties of low-fired Ba₃Ti₄Nb₄O₂₁ ceramics were examined and discussed in the formation of the secondary phases. The Ba₃Ti₄Nb₄O₂₁ sample with 1 wt% B₂O₃ and 3 wt% CuO addition, sintered at 900 °C for 2 h, had the good dielectric properties: ɛ_r = 65, Q × f = 16,000 GHz and τ_f = 101 ppm/°C.     

Effect of B2O3 on the sintering and microwave dielectric properties of M-phase LiNb0.6Ti0.5O3 ceramics

The effect of B₂O₃ addition on the sintering, microstructure and the microwave dielectric properties of LiNb_0.6Ti_0.5O₃ ceramics have been investigated. It is found that low-level doping of B₂O₃ (≤2 wt.%) can significantly improve the densification and dielectric properties of LiNb_0.6Ti_0.5O₃ ceramics. Due to the liquid phase effect of B₂O₃ addition, LiNb_0.6Ti_0.5O₃ ceramics could be sintered to a theoretical density higher than 95% even at 880 °C. No secondary phase was observed for the B₂O₃-doped ceramics. There is no obvious degradation in dielectric properties for the ceramics with B₂O₃ additions. In the case of 1 wt.% B₂O₃ addition, the ceramics sintered at 880 °C show good microwave dielectric properties of ɛ_r = 70, Q × f = 5400 GHz, τ_f = −6.39 ppm/°C. It represents that the ceramics could be promising for multilayer low-temperature co-fired ceramics (LTCC) applications.     

Novel ultra-low loss and low-fired Li8MgxTi3O9+xF2 microwave dielectric ceramics for resonator antenna applications

Low temperature sintered Li₈Mg_xTi₃O_9+xF₂ microwave dielectric ceramics with x = 2−7 were developed based on a newly designed pseudo ternary phase diagram of the Li₂TiO₃–MgO–LiF system. Dense solid solution ceramics (of relative density >96 %) with cubic rock-salt structure, accompanied by a small amount of secondary phase MgO, were obtained in the temperature range of 800−925 °C. With increasing Mg²⁺ content, the value of ε_r decreased, whereas that of τ_f remained nearly constant, and the Q × f increased to a maximum at x = 5. The Li₈Mg₅Ti₃O₁₄F₂ ceramic sintered at 875 °C exhibited superior microwave dielectric properties with ε_r = 16.8, Q × f = 119,700 GHz, and τ_f = −41.6 ppm/°C. The good compatibility with Ag electrodes highlights the promising prospects of this ceramic in low-temperature co-fired ceramic technology. Furthermore, a dielectric resonator antenna fabricated based on a Li₈Mg₅Ti₃O₁₄F₂ ceramic exhibited an outstanding S₁₁ of −34.7 dB and a broad bandwidth of 360 MHz at the desired resonant frequency of 5.98 GHz.     

A novel low-firing microwave dielectric ceramic Li2ZnGe3O8 with cubic spinel structure

A Li₂ZnGe₃O₈ ceramic was investigated as a promising microwave dielectric material for low-temperature co-fired ceramics applications. Li₂ZnGe₃O₈ ceramic was prepared via the conventional solid-state method. X-ray diffraction data shows that Li₂ZnGe₃O₈ ceramic crystallized into a cubic spinel structure with a space group of P4₁32. Dense ceramic with a relative densities of 96.3% were obtained when sintered at 945 °C for 4 h and exhibited the optimum microwave properties with a relative permittivity (ε_r) of 10.3, a quality factor (Q × f) of 47,400 GHz (at 13.3 GHz), and a temperature coefficient of resonance frequency (τ_f) of −63.9 ppm/°C. The large negative τ_f of Li₂ZnGe₃O₈ ceramic could be compensated by rutile TiO₂, and 0.9Li₂ZnGe₃O₈–0.1TiO₂0·1TiO₂ ceramic sintered at 950 °C for 4 h exhibited improved microwave dielectric properties with a near-zero τ_f of −1.6 ppm/°C along with ε_r of 11.3 and a Q × f of 35,800 GHz (11.6 GHz). Moreover, Li₂ZnGe₃O₈ was found to be chemically compatible with silver electrode when sintered at 945 °C.     

Synthesis,characterization, and microwave dielectric properties of ZnTiTa2O8 ceramics with ixiolite structure obtained through the aqueous sol–gel process

Nano-sized ZnTiTa₂O₈ powders with ixiolite structure, with particle sizes ranging from 10 nm to 30 nm, were synthesized by thermal decomposition at 950 °C. The precursors were obtained by aqueous sol–gel and the compacted and sintered ceramics with nearly full density were obtained through subsequent heat treatment. The microstructure and electrical performance were characterized by field emission scanning electron microscopy, x-ray diffraction, and microwave dielectric measurements. All the samples prepared in the range 950–1150 °C exhibit single ixiolite phase and relative density between ~87% and ~94%. The variation of permittivity and Q·ƒ value agreed with that of the relative density. Pure ZnTiTa₂O₈ ceramic sintered at 1050 °C for 4 h exhibited good microwave dielectric properties with a permittivity of 35.7, Q·ƒ value of 57,550 GHz, and the temperature coefficient of resonant frequency of about −24.7 ppm/°C. The relatively low sintering temperature and excellent dielectric properties in the microwave range would make these ceramics promising for applications in electronics.