干燥方式对SiO2/TiO2减反膜性能的影响

用溶胶-凝胶法在清洁的K9玻璃表面成功制备了均匀透明的纳米SiO2/TiO2复合减反射薄膜。分别采用远红外干燥、真空干燥、冷冻干燥、微波干燥等不同的干燥方式和不同干燥时间对同一薄膜进行热处理,系统地研究了不同干燥方式、温度、时间对薄膜的粗糙度、表面形貌及透射率的影响。结果表明,薄膜的最佳干燥条件为真空干燥箱160℃,干燥10h。     

溶胶-凝胶SiO2减反膜的制备与光学性能研究

碱催化溶胶-凝胶多孔SiO₂减反膜具有优异的光学性能及抗激光损伤性能,是高功率激光装置中的重要组成部分,但其与光学元件之间的结合强度低,使得膜层易发生接触破坏。本研究以“神光II”高功率激光装置溶胶-凝胶多孔SiO₂减反膜为基础,通过提拉法在其表层涂覆致密的SiO₂薄层后得到机械强度提升的双层SiO₂减反膜(SiO₂-MTES),并与常用的单层氨固化SiO₂减反膜(SiO₂-HMDS)进行相关应用性能的综合比较。结果表明,涂覆SiO₂-MTES的熔石英在约800 nm处的峰值透过率大于99.6%,运用1-on-1激光损伤阈值测试方法测得该双层SiO₂减反膜的零几率激光损伤阈值为51.9 J/cm²(1064 nm, 9.1 ns),与涂覆SiO₂-HMDS的性能相当。同时, SiO₂-MTES膜层与水的接触角达到117.3°,...     

自清洁SiO2/TiO2减反膜的制备与性能研究

采用溶胶-凝胶技术制备了SiO₂溶胶和TiO₂溶胶,利用浸渍提拉法在光伏玻璃上制备了SiO₂/TiO₂减反膜。用光谱透射比测量仪和椭偏仪测定了薄膜的透光率和折射率,通过场发射扫描电子显微镜观察了薄膜的形貌结构,最后考察了薄膜的自洁性能和耐候性能。结果表明：随着溶胶中TiO₂浓度的升高,SiO₂/TiO₂减反膜的厚度不断增加,而透光率逐渐减小,折射率逐渐增大。在波长为600nm时,TiO₂浓度最低的减反膜(ST-300)的透光率为94.4%,折射率为1.33。ST-300减反膜的表面平整,结构致密。光催化2h后,ST-300减反膜可将10mg/L的甲基蓝溶液降解11.2%,经过耐候处理后,其透光率衰减值仅0.08%～0.15%。     

光和传统热固化对SiO2减反膜影响的对比

以正硅酸乙酯(TEOS)为有机硅源,采用溶胶-凝胶技术,通过调节添加剂控制溶胶溶液性能,然后分别用光固化和传统电阻炉固化两种不同的热处理方案,制备出低折射率SiO2光学减反薄膜。分别采用椭偏仪、扫描电镜等对所制备薄膜的结构、物性进行研究。研究结果表明:光固化比传统电阻炉固化减反膜折射率低。     

醇硅比对太阳能玻璃用多孔SiO2减反膜性能的影响

采用溶胶-凝胶工艺在碱催化条件下制备了多孔结构的纳米SiO2薄膜,研究了不同醇硅比对溶胶体系的粒度分布、薄膜折射率以及透过率的影响。用纳米粒度分析仪测试了溶胶的颗粒分布,用紫外-可见-近红外分光光度计、椭偏仪、原子力显微镜(AFM)、扫描电子显微镜(SEM)测试了薄膜的光学性能、折射率、膜厚和显微形貌等。结果表明:随着醇硅比的增大,溶胶体系粘度下降,凝胶时间延长,颗粒度下降,折射率有升高的趋势;制备的增透玻璃膜层折射率为1.24,可见光透过率达到98.22%。     

具有自洁和耐磨功能SiO2/TiO2减反膜的制备与研究

以正硅酸乙酯(TEOS)和钛酸正丁酯(TBOT)为原料,采用溶胶-凝胶法制备了SiO2溶胶和TiO2溶胶,利用浸渍提拉法制备了SiO2/TiO2双层减反膜.用紫外-可见分光光度计(UV-Vis)、X射线衍射仪(XRD)、扫描电子显微镜(SEM)、原子力显微镜(AFM)、椭圆偏振光谱仪和接触角测量仪等分析表征了薄膜的特性,以光催化降解甲基橙溶液实验来评价薄膜的自洁功能,考察了SiO2/TiO2双层减反膜的耐磨擦性.结果表明,SiO2/TiO2双层减反膜在400~800nm可见光波段的透光率最高可达97.2%,薄膜表面平整,结构致密且粗糙度小,经紫外灯照射后薄膜的水接触角接近0°,光催化2h后可将5mg/L的甲基橙溶液降解43.6%.SiO2/TiO2减反膜还具有优良的耐磨擦性能.     

SiO2对Al2O3凝胶纤维相变的影响

以尿素催化硅酸乙酯水解制得SiO2溶胶。采用29Si NMR、27 Al NMR、FT-IR、TEM、DTA、XRD和SEM等对SiO2溶胶、Al2O3凝胶纤维化学结构和微观结构研究结果表明,该SiO2溶胶稳定性好,含有大量的单硅酸Si(OH)4,能和Al2O3表面的Al—OH反应生成Al—O—Si键而有效地将其包裹,从而阻止了过渡态Al2O3微晶的相互接触,抑制了α-Al2O3的成核和生长。     

甲基纤维素对SiO2薄膜性能的影响

以正硅酸乙酯为主要原料,采用溶胶凝胶法和浸渍提拉技术在氧化铝支撑体上进行涂膜,研究了在制备过程中引入甲基纤维素(MC)对SiO2薄膜性能的影响.采用FT-IR和AFM、BET等测试技术对膜的热稳定性、凝胶膜热处理前后的结构变化和薄膜的表面微观形貌进行表征.实验结果表明,甲基纤维素对SiO2溶胶体系起到增稠剂的作用,本次实验确定的最佳加入量为每100mL溶胶中加入0.35g甲基纤维素;SiO2薄膜表面光滑平整,内部结构均匀,具有良好的热稳定性;但与未加入甲基纤维素的薄膜相比较,薄膜的孔隙率和平均孔径均有一定的减少;SiO2薄膜的孔径分布呈单峰且较窄,其最可几孔径为1.14nm;添加甲基纤维素后的薄膜在0.18MPa下,纯水通量为880L/(m2.h);孔隙率约为31%,体积密度为2.4%.     

SPPO/SiO2/PWA复合质子交换膜的制备及性能

利用溶胶-凝胶法制备出了SPPO/SiO2/PWA复合质子交换膜,对膜的离子交换容量(IEC)、平均当量重量(EW)、磺化度(SD)、吸水性、溶胀率、质子电导率、Tg进行了表征,此外,还对膜的结构进行了FT-IR、SEM表征,结果表明,所制得的掺杂2%～5%SiO2和3%PWA的SPPO复合膜在100℃、100%相对湿度时的质子电导率与Nafion-117?膜相近,有望作为质子交换膜使用。     

膜厚对SnO2∶Sb薄膜红外光学性能的影响

采用溶胶-凝胶法在玻璃基底上制备了Sb掺杂SnO_2(SnO_2∶Sb)薄膜。研究了膜厚对SnO_2∶Sb薄膜红外光学性能的影响,利用X射线衍射仪、分光光度计、霍尔效应测试系统对薄膜样品进行表征和测试。结果表明:SnO_2∶Sb薄膜为四方金红石型结构;当膜厚为1220nm时,薄层电阻最小,为157Ω/□;在红外波段,透射率随膜厚的增加显著下降,当膜厚为890nm时,在波长2000nm处,透射率接近于0,膜厚为1220nm时,在波长1750nm处,透射率为0。     

SiO2薄膜制备的现行方法综述

在导电基体上制作薄膜传感器的过程中,需要在基体与薄膜电极之间沉积一层绝缘膜.二氧化硅薄膜具有良好的绝缘性能,并且稳定性好,膜层牢同,长期使用温度可达1000℃以上,应用十分广泛.通常制备SiO2薄膜的现行方法主要有磁控溅射、离子束溅射、化学气相沉积、热氧化法、凝胶-溶胶法等.本文系统阐述了各种方法的基本原理、特点及适用场合,并对这些方法做了比较.     

The preparation and mechanical properties of novel PVA/SiO2 film

The aim of this work is the evaluation of the mechanical properties of composite PVA/SiO₂. A powder impregnation process with integrated inline continuous plasma of SiO₂ was used to produce PVA/SiO₂ composite. PVA/SiO₂ composite was processed into test laminates by compression mounding and the interface-dominated composite properties were studied. When compared to PVA, the mechanical properties of PVA/SiO₂ were significantly increased, such as tensile strength, tensile modulus and elongation at break, and the damping capacity of PVA/SiO₂ film increased with increasing ratio of SiO₂.     

用中频溅射沉积的大面积SiO2膜层损伤机制的探讨

大面积SiO2厚膜沉积可创造很高的附加值，但在规模生产中会出现严重的膜层损伤。本文针对这一现象进行机理探讨。     

Ge/Si薄膜材料生长的偏压效应研究

利用超高真空磁控浅射系统生长了不同偏压下Ge／Si薄膜材料,所生长的材料采用了不加偏压和加偏压的生长环境。通过X射线小角衍射分析表明,加一定偏压的Ge／Si薄膜材料的层状远比不加偏压的材料好,并且加偏压可有效降低材料的生长温度。在加15－25V偏压明,获得了300℃的生长温度下,层状优良,粗糙度小的薄膜材料。     

Si基多孔 SiO2薄膜驻极体电荷储存稳定性

通过控制溶胶－凝胶（sol-gel)工艺条件,利用相应条件下样品的红外光谱,等温表面电位衰减,开路热刺激放电电流谱等,考虑了Si基多孔SiO2薄膜驻极体体内沉积的空间电荷的储存稳定性,分析了各种工艺参数与薄膜驻极体性质之间的联系。实验结果表明,反应物中水含量对簿膜驻极体的电荷储存稳定性及陷阱分布有一定的影响;烧结温度和时间对电荷的储存稳定性的影响较大。     

Analysis of long-term internal stress and film structure of SiO2 optical thin films

Recently, the demand for durability of optical thin films, which have long been used, has been growing as the performance of optical components improves. The stress of a film is an important parameter that is related to its adhesion. The electron beam (EB) and ion-assisted deposition (IAD) methods are widely used to fabricate optical thin films. However, there are few reports on long-term internal stress, despite the importance of this issue. Here we discuss the time dependence of the stress of SiO2 optical thin films in terms of optical characteristics in the infrared region. It was found that SiO2 thin films prepared by the EB and IAD methods exhibited compression stress. The Si-OH molecular bond was observed at around 930?cm(-1) in the Fourier transform infrared spectroscopy spectrum of the sample prepared by the EB method, which exhibited a large change in internal stress after an elapsed time. It is considered that this change in bonding was related to the decrease in the stress of the films.     

Microstructure analysis of ion beam-induced surface nanostructuring of thin Au film deposited on SiO2 glass

Effects of the irradiation dose on surface nanostructuring accompanied with the dewetting process of Au films deposited on SiO₂ glass were examined using an atomic force microscope and a scanning electron microscope. In addition, the microstructural evolution and the chemical concentration of Au films were investigated using a transmission electron microscope equipped with an energy-dispersive spectrometer. As increasing the Ar ion irradiation dose, the lattice expansion of Au nanoscale islands sustained on the SiO₂ glass was observed and irradiation-induced lattice defects together with irradiation-induced interface ion mixing were accounted for this lattice expansion. Finally a layer of photosensitive Au nanoballs with highly spherical shape embedded in a SiO₂ substrate was obtained after Ar ion irradiation to 10.0 × 10¹⁶/cm² and some of Au nanoballs were found to be single crystals. As the irradiation energy of the Ar ions increased from 100 to 150 keV, the average diameter of the Au nanoballs in the substrate increased and the red shift of the SPR peak was observed. This tendency of the experimental SPR peaks corresponded with that of the theoretically calculated SPR peaks using Mie solution.     

Optical properties of electrochemically deposited ZnO thin films on colloidal crystal film of SiO2 microspheres

The optical properties of electrochemically deposited ZnO thin films on colloidal crystal film of SiO2 microspheres structures were studied. Colloidal crystal film of SiO2 microspheres were self-assembled by evaporation using SiO2 in solution at a constant 0.1 wt%. ZnO in thin films was then electrochemically deposited on to colloidal crystal film of SiO2 microspheres. During electrochemical deposition, the content of Zn(NO3)2 x 6H2O in solution was 5 wt%, and the process's conditions were varied between of 2-4 V and 30-120 s at room temperature, with subsequent heat-treatment between 200 and 400 degrees C. A smooth surface and uniform thickness of 1.8 microm were obtained at 3 V for 90 s. The highest PL peak intensity was obtained in the ZnO thin film heat-treated at 400 degrees C. The double layered ZnO/SiO2 colloidal crystals showed clearly better emission properties than the SiO2/ZnO and ZnO structures.