Electron field emission properties of carbon nanoflakes prepared by RF sputtering

Carbon nanoflakes (CNFs) with corrugated geometry were synthesized using RF sputtering process with Ar/CH₄ gas mixture. Transmission electron microscopic examination reveals that the introduction of H₂ in sputtering chamber leads to the preferential etching of amorphous carbons, while maintaining integrity for the nano-crystalline phases. The proportion of nano-sized crystalline clusters is thus increased, which improved the electron field emission (EFE) properties of the materials, viz. with turn-on field of E ₀ = 6.22 V/μm and FEE current density of J _e = 90.1 μA/cm² at 11.0 V/μm. The cathodes made of screen printing of CNFs-Ag paste exhibit even better EFE properties than the as-deposited CNFs. The EFE of the CNFs cathodes can be turned on at E ₀ = 5.71 V/μm, achieving J ₀ = 340.1 μA/cm² at 11.0 V/μm applied field. These results showed that the CNFs are inheritantly more robust in device fabrication process than the other carbon materials and thus possess better potential for electron field emitter applications.     

Field emission characteristics of carbon nanofibers grown on copper micro-tips at low temperature

Carbon nanofibers (CNFs) were grown on copper micro-tips formed by electroplating. The nickel layer electroplated over the copper micro-tips was used as a catalyst. The CNFs were synthesized by using plasma-enhanced chemical vapor deposition (PECVD) of C₂H₂ and NH₃ at 480 °C. The copper micro-tips were formed by high current pulse electroplating, which played a significant role in characterizing our CNFs. The CNFs grown on the copper micro-tips showed outstanding field emission performance and stability, whose turn-on field, defined as one at the current density of 10 μA/cm², was 1.30 V/μm and the maximum current density reached 5.39 mA/cm² at an electric field of 4.9 V/μm.     

ZnO propeller-like nanostructures and the influence of carriers on field emission

Propeller-like ZnO nanostructures are fabricated by a physical vapor deposition method. This structure exhibits a good field emission characteristic with a turn-on field of 4.36 V/μm. Cathodoluminescence studies suggest that the high current density in the surface is attributed to the main reason causing good field emission characteristic.     

Selective growth of well-aligned carbon nanotubes by APCVD

Well-aligned good-quality carbon nanotube (CNT) array was grown on silicon substrate by atmospheric pressure chemical vapor deposition (APCVD) through SiO₂ masking. First, the patterned substrate was pretreated with NH₃ and then CNTs were synthesized at 800 °C using Ni as the catalyst, acetylene (C₂H₂) as the carbon source material and N₂ as the carrier gas. Effects of the NH₃-pretreatment time, the flow ratio of [C₂H₂]/[NH₃] and the CNT growth time on the qualities of CNT array were analyzed in detail. It was found that good-quality CNTs with an average length of around 15 μm could be grown by pretreating the Si substrate with NH₃ for 10 min and then conducting the CNT growth with a flow ratio of [C₂H₂]/[NH₃] = 30/100. Furthermore, the field emission property of CNT array was investigated using a diode structure. It was found that the turn-on electric field decreased with increasing CNT length. The turn-on electric field as low as about 2 V/μm with an emission current density of 10 μA/cm² was achieved for a CNT-array diode with the tube length near 18 μm. For the same device, the emission current density could be elevated to 10 mA/cm² with the applied voltage of 3.26 V/μm.     

Fabrication of carbon nanoflakes by RF sputtering for field emission applications

In this paper, an ultra thin sheet-like carbon nanostructure, carbon nanoflake (CNF), has been effectively fabricated by RF sputtering on Si substrate without any catalyst or special substrate pre-treatment. The CNFs were chosen to be the field emission emitters because of their very sharp and thin edges which are potentially good electron field emission sites. The effect of deposition parameters such as substrate temperature, gas flow ratio and RF power on the field emission properties is discussed in detail. The sheet-like structures with thickness of about 10 nm or less stand on edge on the substrate and have a defective graphite structure. The field emission properties of the sample deposited at the optimum deposition conditions are turn-on field of 5.5 V/μm and current density of 1.4 mA/cm² at 11 V/μm. Considering the inexpensive manufacturing cost, lower synthesis temperature and ease of large-area preparation, the CNFs with low turn-on field deposited by RF sputtering might have a potential application in field emission devices.     

Growth and optical and field emission properties of flower-like ZnO nanostructures with hexagonal crown

Flower-like zinc oxide (ZnO) nanostructures with hexagonal crown were synthesized on a Si substrate by direct thermal evaporation of zinc power at a low temperature of 600 °C and atmospheric pressure. Field emission scanning electron microscopy, transmission electron microscopy, X-ray diffraction, Raman spectroscopy and photoluminescence were applied to study the structural characteristics and optical properties of the product. The result indicated that the flower-like product with many slender branches and hexagonal crowns at the ends were single-crystalline wurtzite structures and were preferentially oriented in the <001> direction. The photoluminescence spectrum demonstrated a strong UV emission band at about 386 nm and a green emission band at 516 nm. The field emission of the product showed a turn-on field of 3.0 V/µm at a current density of 0.1 μA/cm², while the emission current density reached about 1 mA/cm² at an applied field of 5.9 V/μm.     

Enhanced and stable electron emission of carbon nanotube emitter arrays by post-growth hydrofluoric acid treatment

Carbon nanotubes (CNT) have been highlighted as possible candidates for field-emission emitters and vacuum nanoelectronic devices. In this article, we studied the effect of acid treatment of CNTs on field emission from carbon nanotube field emitter arrays (FEAs), grown using the resist-assisted patterning process (RAP). The emission current densities of as grown CNT-FEAs and those which were later immersed in hydrofluoric acid (HF) for 20 s, were 19 μA/cm² and 7.0 mA/cm², respectively, when measured at an anode field of 9.2 V/μm. Hence, the emission current densities after HF treatment are 300 times larger than those of as grown CNT-FEAs. Also, it was observed that a very stable electron emission current was obtained after stressing the CNTs with an electric field of 9.2 V/μm for 800 min in dc-mode, where the emission current non-uniformity was 0.13%. The enhancement in electron emission after HF treatment appears to be due to the effect of fluorine bonding. Also, the electron emission characteristics and structural improvement of CNT-FEAs after HF treatment are discussed.     

Efficient field emission from tetrapod-like zinc oxide nanoneedles

Tetrapod-like zinc oxide (ZnO) nanoneedles were fabricated using a simple and economical method of rapid heating high purity zinc powders at 900 °C. No catalyst and vacuum were employed in the experiment. Field-emission measurements showed that the turn-on field of the synthesized tetrapod-like ZnO nanoneedles was as low as 1.8 V/μm at the emission current density of 1.0 μA/cm² and the emission current density reached 1.0 mA/cm² under an applied field of about 3.9 V/μm. The low turn-on field, high emission current density, and good electron emission stability make the ZnO nanoneedles one of the promising candidates for field-emission displays.     

Preparation and field emission properties of titanium polysulfide nanobelt films

TiS₃ nanobelt films, with widths of about 0.1–12 μm, thickness of about 20–250 nm, and lengths of up to 200 μm, have been grown on Ti substrates by a surface-assisted chemical-vapor-transport at 450 °C for 8 h. The TiS₃ nanobelt films were converted into TiS_1.71 nanobelt films by pyrolysis in a vacuum at 600 °C for 2 h. The work functions of the two films were determined by ultraviolet photoelectron spectroscopy measurements to be 4.60 and 4.44 eV, respectively. Preliminary field emission experiments using the nanostructures as cold electron cathodes showed that both materials gave significant emission currents. The turn-on fields (defined as the electric field required to produce a current density of 10 μA/cm₂) were about 1.0 and 0.9 V/μm, respectively, whereas the threshold fields (defined as the electric field required to produce a current density of 1 mA/cm₂) were about 5.6 and 4.0 V/μm, respectively. These data reveal that both materials have potential applications in field emission devices. This article is published with open access at Springerlink.com     

Field emission characteristics of fast grown nanocrystalline diamond/amorphous carbon composite films by microwave plasma-enhanced chemical deposition method

This study synthesized the nanocrystalline diamond/amorphous carbon (NCD/a-C) composite films by the microwave plasma-enhanced chemical vapor deposition (MPCVD) system with Ar/CH₄/N₂ mixtures. A localized rectangular-type jet-electrode with high density plasma was used to enhance the formation of NCD/a-C films, and a maximum growth rate of 105.6 µm/h was achieved. The content variations of sp² and sp³ phases via varying nitrogen gas flow rates were investigated by using Raman spectroscopy. The NCD/a-C film which synthesized with 6% nitrogen concentration and no hydrogen plasma etching treatment possessed a low turn-on electric field of 3.1 V/µm at the emission current of 0.01 µA.     

Field emission from the structure of well-aligned TiO2/Ti nanotube arrays

Well-aligned TiO₂/Ti nanotube arrays were synthesized by anodic oxidation of titanium foil in 0.5 wt.% HF in various anodization voltages. The images of filed emission scanning electron microscopy indicate that the nanotubes structure parameters, such as diameter, wall thickness and density, can be controlled by adjusting the anodization voltage. The peaks at 25.3° and 48.0° of X-ray diffraction pattern illuminate that the TiO₂ nanotube arrays annealed at 500 °C are mainly in anatase phase. The filed emission (FE) properties of the samples were investigated. A turn-on electric field 7.8 V/µm, a field enhancement factors approximately 870 and a highest FE current density 3.4 mA/cm² were obtained. The emission current (2.3 mA/cm² at 18.8 V/µm) was quite stable within 480 min. The results show that the FE properties of TiO₂/Ti have much relation to the structure parameters.     

Synthesis of straight multi-walled carbon nanotubes by arc discharge in air and their field emission properties

The possibility of preparing straight multi-walled carbon nanotubes (MWCNTs) on a large scale is demonstrated using direct current arc discharge with a rotating graphite anode in low pressure air. The process is time-saving, economical, and non-hazardous. It is found that the optimum air pressure for the highest yield of MWCNTs is about 60 Torr. Investigation of the internal organization of the cathode deposit reveals that many columns about 40 μm in diameter are closely packed and mechanically stable. The highest content of MWCNTs is found in the intercolumnar spaces between columns. Emitters made of the cathode deposits that contain a large number of straight nanotubes exhibit outstanding field emission properties. The turn-on electric field decreases from 1.44 to 0.93 V/μm and the field enhancement factor β increases from about 3,190 to 7,830 only after simple burning at 750 °C for 30 min in air. The results indicate that MWCNTs prepared by arc discharge in air are promising for field emission application.     

Synthesis, optical and field emission properties of three different ZnO nanostructures

Three different ZnO nanostructures: nanocherries, nanomultipeds and nanospindles were successfully synthesized by thermal evaporation method under different experimental conditions. The X-ray diffraction peaks indicate that these ZnO nanostructures prefer to grow along the c-axis. Photoluminescence (PL) spectra show that they are partially related to morphologies. Comparing the field emission (FE) measurements of the three ZnO nanostructures, we found that the nanocherries structure has the lowest turn-on and threshold field, 2.31 V/μm and 5.83 V/μm, respectively, for nanospindles and nanomultipeds structures, they are 2.82 V/μm and 6.57 V/μm, 3.13 V/μm and 7.35 V/μm, revealing that the nanocherries structure may be one of the promising candidates for field emission displays.     

Enhanced field emission from the ZnO nanowires by hydrogen gas exposure

ZnO nanowires (ZNWs) were synthesized on Co-coated Si wafer via a carbon thermal reduction vapor transport method. Scanning electron microscopy, X-ray diffraction and transmission electron microscopy investigations show that these ZNWs present a high-quality single-crystalline hexagonal structure. Field emission (FE) characteristics of the ZNWs film were measured. A low turn-on voltage for driving a current density of 0.1 μA/cm² is about 3.9 V/μm. The field enhancement factor was determined to be ∼ 1180 for ZNWs film. Exposure of H₂ during FE causes a permanent increase in the FE current and a decrease in the turn-on field. Also, the field enhancement factor γ was finally increased from 1180 ± 20 to 1510 ± 20 after FE saturation.     

Imogolite as an electron emitter and a water sensor

We investigated field emission (FE) properties of imogolite including the turn-on field and lifetime stability. Imogolite is an excellent electron emitter with a turn-on field of approximately 2.5–3.5 V/μm. A lifetime test revealed that imogolite protects itself during FE under exposure to O₂ gas. We also measured the current–voltage characteristics of the imogolite as a function of the amount of water adsorbed on the surface. The results suggested that the electrode-containing imogolite device could be a useful water sensor in a nanoscale environment.     

Field emission characteristics of CNTs synthesized by bias-assisted ICPHFCVD and ICPCVD techniques

Carbon nanotubes (CNTs) were vertically well-grown on Ni/Cr-deposited glass substrates at 580 °C by ICPCVD and bias-assisted ICPHFCVD techniques. The vertically well-aligned CNTs showed multi-walled type with hollow structure. The measured critical current density on CNTs grown by the ICPCVD technique was 1.0×10^–6 A cm^–2 at 5 V m^–1 of turn-on field and 7.7×10^–5 A cm^–2 at 7.8 V m^–1 of the critical field. On the other hand, the critical current density on CNTs grown by the bias-assisted ICPHFCVD technique was 3.7×10^–7 A cm^–2 at 3 V m of turn-on field and 3.3×10^–4 A cm^–2 at 6.8 V m^–1 of the critical field, respectively. On comparing the two processes, it can be concluded that CNTs grown by bias-assisted ICPHFCVD are more suitable than those grown by ICPCVD for the possible application of field emission displays (FEDs).     

Study on electron field emission enhancement from nitrogenated carbon nanotips synthesized by plasma-enhanced hot filament chemical vapor deposition

Nitrogenated carbon nanotips (NCNTPs) with different structures were synthesized by plasma-enhanced hot filament chemical vapor deposition using methane, hydrogen and nitrogen as the reactive gases. The structures and compositions of the NCNTPs were studied by field emission scanning electron microscopy (FESEM), micro-Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). The XPS spectra reveal that nitrogen is incorporated into the carbon nanotips to form the NCNTPs under plasma condition. The Raman spectra and FESEM images show that the NCNTPs are amorphous structure and their morphologies change with the change in deposition conditions, respectively. The electron field emission (EFE) from the NCNTPs was measured and the EFE results indicate that the NCNTPs with the smooth surfaces and high density can emit a current density of 3 × 10³ μA/cm² at an electric field of 7.2 V/μm, which exhibits better EFE characteristic than the NCNTPs with the carbon nanowires on their surfaces due to small amount of oxygen adsorbed on the smooth surfaces of NCNTPs. According to the possible structures of nitrogen in sp² cluster in rings, the EFE enhancement of the NCNTPs compared with pure carbon nanotips was studied. The high emission current density (3 × 10³ μA/cm²) at low field (7.2 V/μm) suggests that the NCNTPs can serve as effective electron emission sources for numerous applications.     

Aligned tungsten oxide nanowires on tungsten (100) substrates

WO₃ nanowires in body center cubic structure were grown on W (100) substrates by heating in an argon atmosphere. Scanning electron microscope and transmission electron microscope characterizations show the WO₃ NWs grew along the [100] crystallographic orientation and were aligned in three directions. The diameter of WO₃ NWs is in the range of several to 20 nm and the length is up to 1 µm. Field emission measurements show that the field emission current density can reach 1.8 mA/cm² under electrical field 10 V/µm and the turn-on field can be as low as 2.6 V/µm.     

高场发射性能碳纳米管薄膜的沉积与表征

利用电泳法将碳纳米管（CNTs）沉积在表面镀覆了50～150 nm Ti薄膜的Si基底表面,900℃真空退火后形成了具有良好场发射性能的Ti-CNTs薄膜阴极.利用X射线衍射和扫描电子显微镜对制备的Ti-CNTs薄膜进行了表征.结果表明,高温退火过程中,CNTs的C原子和基底表面的Ti原子发生化学反应,在CNTs与基底之间形成了导电性钛碳化物,明显改善了CNTs与基底之间的电导性和附着力等界面接触性能;与Si基底表面直接电泳沉积的CNTs薄膜相比,制备的Ti-CNTs薄膜的开启电场从1.31 V/μm降低到1.19 V/μm;当电场强度为2.50 V/μm时,Ti-CNTs薄膜的场发射电流密度可达13.91 mA/cm^2;制备的Ti-CNTs薄膜显示出改善的发射稳定性.     

UNCD electron emitters using Si nanostructure as a template

The electron field emission (EFE) properties of silicon nanostructures (SiNSs) coated with ultra-nanocrystalline diamond (UNCD) were characterized. The SiNS, comprising cauliflower-like grainy structure and nanorods, was generated by reaction of a Si substrate with an Au film at 1000 °C, and used as templates to grow UNCD. The UNCD films were deposited by microwave plasma-enhanced chemical vapour deposition (MPECVD) using methane and argon as reaction gases. The UNCD films can be grown on the SiNS with or without ultrasonication pretreatment with diamond particles. The EFE properties of the SiNS were improved by adding an UNCD film. The turn-on field (E₀) decreased from 17.6 V/μm for the SiNS to 15.2 V/μm for the UNCD/SiNS, and the emission current density increased from 0.095 to 3.8 mA/cm² at an electric field of 40 V/μm. Ultrasonication pretreatments of SiNS with diamond particles varied the structure and EFE properties of the UNCD/SiNS. It is shown that the ultrasonication pretreatment degraded the field emission properties of the UNCD/SiNS in this study.