一种新型能源组件的研制

介绍了某激光装置系统新型能源组件的研制.该能源组件可同时为激光装置的多路氙灯组提供高能量脉冲,是此装置的重要组成部分;采用模块化设计,由多套能源模块组成,单个能源模块主要由通信控制、充电、储能、高功率开关、安全泄放及灯负载电流实时采集等组成;具有电路简单可靠、数据采集准确直观、抗干扰性能好等特点,其中零电流高频变换器作为电容器组充电机的工程应用,提高了能源组件的可靠性.     

神光Ⅲ强激光能源模块高储能密度电容器的快速保护

分析了大功率激光脉冲电源高储能密度电容器快速保护的必要性 ,提出了电感和特种熔断器快速保护技术路线 ,介绍了快速保护熔断器设计方法。试验表明 ,所研制的熔断器故障情况下可在四分之一周期时间内快速动作 ,使电容器反向电压不超过 10 %,已成功应用于神光Ⅲ能源模块高储能密度电容器的保护。     

600kJ高功率激光放大器能源模块的研制

简要介绍了某激光驱动器模块化脉冲供能系统的研制。该脉冲供能系统可为激光器的10组氙灯提供脉冲能量,是高功率激光器的重要组成部分。该能源模块具有主电路结构简单、性能价格比较高、抗干扰性能良好等特点。首次在国内同类模块装置中使用高比能、自愈式、金属化介质电容器,首次成功使用高频高压开关电源作为能库充电机。     

600kJ高功率激光放大器能源模块的研制

简要介绍了某激光驱动器模块化脉冲供能系统的研制。该脉冲供能系统可为激光器的10组氙灯提供脉冲能量,是高功率激光器的重要组成部分。该能源模块具有主电路结构简单、性能价格比较高、抗干扰性能良好等特点。首次在国内同类模块装置中使用高比能、自愈式、金属化介质电容器,首次成功使用高频高压开关电源作为能库充电机。     

高功率高重频TEA CO2激光器激光放电腔技术

介绍了高功率、高重频TEA CO2激光器激光放电腔的放电电路、结构及特点,针对该系统的性能实施了合理的技术设想及研究方法。在分析高功率TEA激光器技术基础上,讨论了TEA CO2激光器激光放电腔的基本机理。该系统由多只具有储能充、放电功能的陶瓷电容,通过低阻抗匹配传输线、放电电极和紫外光预电离装置向激光器高能放电腔注入电能,获得高重复频率脉冲和高能量脉冲,经光学谐振腔窗口输出高功率激光。描述了储能充放电路、高压快脉冲、低阻抗匹配传输线、放电电极和紫外光预电离等技术的具体应用。     

高压薄膜脉冲电容器放电性能的研究

高压薄膜脉冲电容器是放电触发电路中的重要储能器件,通常用于产生高功率大电流脉冲.分析高压薄膜电容器性能检测指标及实际放电过程,找出了高压薄膜电容器样本失效原因,采取提高卷绕电容器芯工艺水平措施后,所制高压薄膜电容器常规指标合格,放电触发次数可靠性指标达到系统要求的6 000次以上.     

PSpice在高功率固体激光能源系统中的应用

在神光能源系统模块中,依据脉冲氙灯放电特性及氙灯放电回路的技术要求,采用仿真软件OrCAD PSpice分别从脉冲氙灯的五路放电、氙灯能量分配及能源模块在放电过程中存在的故障三个方面进行模拟仿真并给出仿真结果,并与实际装置运行数据进行比较分析,其仿真的结果与实际理论分析结论基本一致,验证了仿真模型及过程的可靠性,这为高功率激光装置的电子计算机辅助设计和分析提供了一种新途径。     

储能电容器在大电流脉冲系统中的应用

储能电容器是一种容纳大容量电荷的电子器件。脉冲工作时,储能电容器作为储能器件,可提供超大的电流能力;利用储能电容器的充放电特性,可以将电子系统中脉冲电流滤波成为较为平滑的直流电,大大降低低压大电流脉冲电子系统对电源的要求。本文给出了低压脉冲系统中储能电容器使用原则和高分三号卫星中应用实例,通过对卫星供电系统建模仿真,得出了系统最优的电容使用参数。文中的设计方法对其他电子系统设计具有一定的借鉴意义。     

用于大功率激光器的空芯脉冲变压器

在电源电路中如果用空芯变压器系统来取代马克发发生器，将能有效地缩减未来的高功率脉冲准分子激光器或二氧化碳激光器的大小、重量和复杂性。一台空芯变压器不需要有象马克斯发生器那样多的大容量储能电容器，也不需要复杂的开关和直流充电元件。脉冲变压器系统以一组低压电容器作为原初储能，它既不需要如马克斯发生器那样有许多开关，也不需要用于直流充电的复杂的电阻链和开关。因为变压器系统的初级部分工作电压比马克斯发生器低，所以免除了放置高压元件所需的特大绝缘油箱。     

5kV重复频率高压脉冲电源设计

针对毛细管放电X线激光的研究中气体预电离对电源的要求,设计一种重复频率的高压脉冲电源。采用可调直流高压电源和储能电容器作为能源系统,利用固体开关作为主放电开关控制脉冲宽度和频率,最后通过脉冲变压器升压在负载上得到所需的电压脉冲。整个系统利用计算机和数据采集控制卡实现程控。实验结果表明5kV重复频率高压脉;中电源的最终输出脉冲电压范围为3-5kV可调：脉冲宽度范围为2-20μs可调：脉冲频率范围为1～200Hz可调;脉冲电流最大100A。     

混合储能在风光互补发电系统中的能量管理与控制策略

储能技术在风光互补发电技术中的应用使得风光互补发电技术得到了进一步完善,各个部分的控制更加合理、有效,系统更加稳定、安全,并且使用效率及寿命得到了提高。通过仿真验证了一种蓄电池与超级电容混合储能结构,在这种结构中通过控制DC/DC变换器将蓄电池的高能量密度及超级电容的高功率密度的特点相结合,并且运用滑动滤波器进行二者的能量分配,同时通过DC/DC变换器达到对各储能部分实时控制的目的,从而提高了混合储能系统的灵活性与实用性。     

Single-stage single-switch input-current-shaping technique withfast-output-voltage regulation

A new single-stage single-switch input-current-shaping (S⁴ ICS) technique, which combines the boost-like input-current shaper with a continuous-conduction-mode (CCM) DC/DC output stage, is described. In this technique, the boost inductor can operate in both the discontinuous conduction mode (DCM) and CCM. Due to the ability to keep a relatively low voltage (<450 V_DC) on the energy-storage capacitor, this technique is suitable for the universal line-voltage applications. The voltage on the energy-storage capacitor is kept within the desirable range by the addition of two transformer windings. The principle of operation of the S⁴ICS circuit with a forward DC/DC converter is presented. Experimental results obtained on a 100 W (5 V/20 A) prototype circuit are also given     

Control algorithms and circuit designs for optimal flyback-chargingof an energy-storage capacitor (e.g., for flash lamp or defibrillator)

A flyback-type of a transformer-coupled DC/DC power converter supplies a train of current pulses to charge an energy-storage capacitor to a desired high voltage, converting input DC power obtained from a lower voltage DC source. The energy-storage capacitor is charged to a specified voltage within a specified time with minimum peak and RMS currents in the transistor, the rectifier diode, the transformer windings and the DC power source, minimizing the i²R losses. This is done by generating: (1) energy-storage current pulses in the power transistor and the transformer primary winding in which the current increment from the beginning to the end of a pulse is only a small fraction of the final (peak) value; and (2) energy-delivery flyback current pulses in the capacitor and the transformer secondary winding in which the current decrement from the beginning to the end of a pulse is only a small fraction of the initial (peak) value. Recommended methods are: (1) hysteretic current-mode control with current sensing in both transformer windings; (2) peak-current-commanding current-mode control with switching frequency or transistor-nonconducting time varying in a prescribed way during the charging; or (3) valley-current-commanding current-mode control with switching frequency or transistor-conducting time varying in a prescribed way during the charging. Compared with one nonoptimal method, peak currents are reduced by a factor of about 2 and i²R power losses are reduced by a factor of about 1.33     

MOPA结构准分子激光电源的高精度电压控制研究

为了减小激光器双腔放电时间的相对抖动、稳定激光器输出能量,采用闭环控制回路电压泄放方法,设计了一套主振荡功率放大结构准分子激光谐振充电高精度电压控制方案。通过对电容电压取样处理,动态监测储能电容电压,当电容电压大于目标电压时,由泄放电路泄放电压至目标值,得到高精度的充电电压,使用此电压控制方案后,充电电压的波动由1.67减小到0.83。结果表明,该方案很好地提高了谐振电源储能电容上的电压精度,减小了激光器双腔放电时间的相对抖动,并为后期的激光器能量输出稳定控制打下良好基础。     

Voltage Balancing of a 320-V, 12-F Electric Double-Layer Capacitor Bank Combined With a 10-kW Bidirectional Isolated DC--DC Converter

Electric double-layer capacitors (EDLCs) have attributes that feature high power density, quick charge/discharge time, long life cycle, and environmental friendliness. These attributes accord for increased appeal in employing the EDLCs as energy-storage devices in renewable energy systems, industrial applications, and hybrid electric vehicles as compared to other mature static energy-storage devices. This paper describes the construction of a 320-V, 12-F EDLC energy-storage bank connected to a bidirectional isolated dc--dc converter. Two types of EDLC bank configurations are considered with emphasis on their voltage-balancing circuits. Subsequently, this paper proposes a voltage-balancing circuit based on a center-tapped transformer, and includes its experimental verifications. It also discusses the charge--discharge and self-starting operation of the EDLC energy-storage system. During the charge--discharge operation, a low ripple current flowing in the EDLC bank is observed, leading to a theoretical analysis. The EDLC bank is also successfully charged to its rated voltage without any external dc charging circuit.      

Antiferroelectric Anisotropy of Epitaxial PbHfO3 Films for Flexible Energy Storage

Dielectric capacitors are widely studied for power supply systems because they can quickly store and release electrical energy. Among various kinds of dielectric materials, antiferroelectrics show promising features of high energy-storage density and efficiency. In this study, epitaxial antiferroelectric PbHfO₃ films with different orientations are fabricated, in which remarkable anisotropies of polarization and energy storage properties are discovered. With the optimization of film orientation, much-improved energy density and excellent high-temperature efficiency are achieved in the PbHfO₃ films. Moreover, the PbHfO₃ films are fabricated onto flexible mica substrates, which exhibit excellent property robustness against mechanical bending. This study provides a fundamental understanding of the anisotropic antiferroelectric behaviors of epitaxial PbHfO₃ films and provides a generalizable pathway for flexible energy-storage dielectric capacitors.     

多正极混合型超级电容器的研制

通过结构优化组合,采用铝化成箔(Al/Al2O3)极片为正极,活性炭极片(AC/Al)为负极,研制了电压为16V的多正极混合超级电容器。通过增加正极数量,进一步提高能量密度。多项电化学性能测试显示:多正极混合超级电容器具有快速充放电能力,与1000μF铝电解电容器相比,能量密度提高了约9倍,阻抗曲线接近理想电容器,内阻约为0.05?。     

采用金属耦合电容实现级间匹配的射频功率放大器

One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available,especially no high density capacitor.To address this problem,a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process.This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal（MIM） capacitor regarding their capacitor density.Detailed simulations are carried out for the leakage,the voltage dependency,the temperature dependency,and the quality factor between an inter-metal shuffled（IMS） capacitor and an MIM capacitor.Finally,an IMS capacitor is chosen to perform the inter-stage matching.The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application.The PA occupies 370 × 200 μm^2 without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.     

Metal-layer capacitors in the 65 nm CMOS process and the application for low-leakage power-rail ESD clamp circuit

Between the metal–insulator–metal (MIM) capacitor and metal–oxide–metal (MOM) capacitor, the MIM capacitor has a better characteristic of stable capacitance. However, the MOM capacitors can be easily realized through the metal interconnections, which does not need additional fabrication masks into the process. Moreover, the capacitance density of the MOM capacitor can exceed the MIM capacitor when more metal layers are used in nanoscale CMOS processes. With advantages of lower fabrication cost and higher capacitance density, the MOM capacitor could replace MIM capacitor gradually in general integrated circuit (IC) applications. Besides, the MOM capacitor ideally do not have the leakage issue. Thus, the MOM capacitor can be used instead of MOS capacitor to avoid the gate leakage issue of thin-oxide devices in nanoscale CMOS processes. With the MOM capacitor realized in the power-rail electrostatic discharge (ESD) clamp circuit, the overall leakage is decreased from 828 μA to 358 nA at 25 °C, as compared to the traditional design with MOS capacitor in the test chip fabricated in a 65 nm CMOS process.     

ALD氧化铝薄膜介电性能及其在硅电容器的应用

硅基高密度电容器是利用半导体3D深硅槽技术和应用高介电常数(高K)材料制作的电容。相比钽电容和多层陶瓷电容(MLCC),硅基电容具有十年以上的寿命、工作温度范围大、容值温度系数小以及损耗低等优点。文章研究原子层沉积(ALD)制备的Al2O3薄膜的介电特性,通过优化ALD原子沉积温度和退火工艺,发现在沉积温度420℃和O3气氛退火5 min下,ALD生长的Al2O3薄膜击穿强度可大于0.7 V/nm,相对介电常数达8.7。制成的硅基电容器电容密度达到50 nF/mm2,漏电流小于5 nA/mm2。