Transparent p-type CuxS thin films

The effect of different mild post-annealing treatments in air, at 270 °C, for 4-6 min, on the optical, electrical, structural and chemical properties of copper sulphide (Cu_xS) thin films deposited at room temperature are investigated. Cu_xS films, 70 nm thick, are deposited on glass substrates by vacuum thermal evaporation from a Cu₂S:S (50:50 wt.%) sulphur rich powder mixture. The as-deposited highly conductive crystalline CuS (covellite) films show high carrier concentration (∼10²² cm⁻³), low electrical resistivity (∼10⁻⁴ Ω cm) and inconclusive p-type conduction. After the mild post-annealing, these films display increasing values of resistivity (∼10⁻³ to ∼10⁻² Ω cm) with annealing time and exhibit conclusive p-type conduction. An increase of copper content in Cu_xS phases towards the semiconductive Cu₂S (chalcocite) compound with annealing time is reported, due to re-evaporation of sulphur from the films. However, the latter stoichiometry was not obtained, which indicates the presence of vacancies in the Cu lattice. In the most resistive films a Cu₂O phase is also observed, diminishing the amount of available copper to combine with sulphur, and therefore the highest values of optical transmittance are reached (65%). The appearance on the surface of amorphous sulphates with annealing time increase is also detected as a consequence of sulphur oxidation and replacement of sulphur with oxygen. All annealed films are copper deficient in regards to the stoichiometric Cu₂S and exhibit stable p-type conductivity.     

Annealing driven performance and optical effects in nanocrystalline SnO2 thin films induced by pulsed delivery

Tin dioxide thin films were prepared successfully by pulsed laser deposition techniques on glass substrates. The thin films were then annealed for 30 min from 50 °C to 550 °C at 50 °C intervals. The influence of the annealing temperature on the microstructure and optical properties of SnO₂ thin films was investigated using X-ray diffraction, optical transmittance and reflectance measurements. Various optical parameters, such as optical band gas energy, refractive index and optical conductivity were calculated from the optical transmittance and reflectance data recorded in the wavelength range 300-2500 nm. We found that the SnO₂ thin film annealed at temperatures up to 400 °C is a good window material for solar cell application. Our experimental results indicated that SnO₂ thin films with the high optical quality could be synthesized by pulsed laser deposition techniques.     

Influence of indium doping on the properties of spray deposited CdS0.2Se0.8 thin films

Polycrystalline indium doped CdS_0.2Se_0.8 thin films with varying concentrations of indium have been prepared by spray pyrolysis at 300 °C. The as deposited films have been characterized by XRD, AFM, EDAX, optical and electrical resistivity measurement techniques. The XRD patterns show that the films are polycrystalline with hexagonal crystal structure irrespective of indium doping concentration. AFM studies reveal that the RMS surface roughness of film decreases from 34.68 to 17.76 with increase in indium doping concentration up to 0.15 mol% in CdS_0.2Se_0.8 thin films and further it increases for higher indium doping concentrations. Traces of indium in CdS_0.2Se_0.8 thin films have been observed from EDAX studies. The optical band gap energy of CdS_0.2Se_0.8 thin film is found to decrease from 1.91 eV to 1.67 eV with indium doping up to 0.15 mol% and increase after 0.15 mol%. The electrical resistivity measurement shows that the films are semiconducting with minimum resistivity of 3.71 × 10⁴ Ω cm observed at 0.15 mol% indium doping. Thermoelectric power measurements show that films exhibit n-type conductivity.     

Epitaxial 0.65PbMg1/3Nb2/3O3-0.35PbTiO3 (PMN-PT) thin films grown on LaNiO3/CeO2/YSZ buffered Si substrates

Ferroelectric PMN-PT thin films with a thickness of 600 nm were epitaxially grown on buffered Si (0 0 1) substrates at a substrate temperature that ranged from 550 to 700 °C using pulsed laser deposition (PLD). LaNiO₃ (LNO) electrode thin films with a resistivity of ∼1900 μΩ cm were epitaxially grown on CeO₂/YSZ buffered Si (0 0 1) substrates. The PMN-PT thin films grown at 600 °C on LNO/CeO₂/YSZ/Si substrates had a pure perovskite and epitaxial structure. The PMN-PT films exhibited a high dielectric constant of about 1818 and a low dissipation factor of 0.04 at a frequency of 10 kHz. Polarization-electric-field (P-E) hysteresis characteristics, with a remnant polarization of 11.1 μC/cm² and a coercive field of 43 kV/cm, were obtained in the epitaxial PMN-PT films.     

Synthesis and characterization of Cu2ZnSnS4 thin films grown by PLD: Solar cells

As-deposited and annealed Cu₂ZnSnS₄ (CZTS) thin films have been synthesized onto Mo coated glass substrates at different deposition times using pulsed laser deposition (PLD) technique. The effect of deposition time (film thickness) and annealing onto the structural, morphological, compositional and optical properties of CZTS thin films have been investigated. The polycrystalline CZTS thin films with tetragonal crystal structure have been observed from structural analysis. FESEM and AFM images show the smooth, uniform, homogeneous and densely packed grains and increase in the grain size after annealing. The internal quantitative analysis has been carried out by XPS study which confirms the stoichiometry of the films. The optical band gap of CZTS films grown by PLD is about 1.54 eV, which suggests that CZTS films can be useful as an absorber layer in thin film solar cells. Device performance for deposited CZTS films has been studied.     

Thickness-dependence of the B2-B19 martensitic transformation in nanoscale shape memory alloy thin films: Zero-hysteresis in 75 nm thick Ti51Ni38Cu11 thin films

The influence of film thickness on the B2-B19 martensitic transformation properties of nanoscale Ti₅₁Ni₃₈Cu₁₁ thin films with thicknesses ranging from 750 to 50 nm is reported. For these films an unexpected behavior of the phase transformation temperatures was observed: A_f and O_s initially decrease with decreasing film thickness but increase sharply again for thicknesses <100 nm. The phase transformation temperatures and thermal hysteresis width range from 58 to 35 °C (A_f) and 14 to ∼0 K, respectively. For the first time we can show that substrate-attached Ti-Ni-Cu thin films as thin as 50 nm show reversible B2-B19 phase transformations. Furthermore, it is shown that with decreasing film thickness a change in the tetragonality of the B19 martensite phase occurs. This leads to fulfilling the so-called λ₂ criterion, causing a vanishing hysteresis for a film thickness of 75 nm.     

Structural, optical and electrical properties of Mg-doped CuCrO2 thin films by sol-gel processing

CuCr_1−xMg_xO₂ (x = 0, 0.03, 0.05, 0.07) thin films were prepared on sapphire substrates by sol-gel processing. The effect of Mg concentrations on the structural, morphological, electrical and optical properties was investigated. Highly transparent ≧70% Mg-doped CuCrO₂ thin films with p-type conduction and semiconductor behavior were obtained. The microstructure of the systems was characterized by scanning electron microscopy and the roughness increased as the content of Mg increased. The photoluminescence spectra results indicated that it had a green luminescent emission peak at the 530 nm. In this paper, CuCr_0.95Mg_0.05O₂ film has the lowest resistivity of 7.34 Ω cm with direct band gap of 3.11 eV. In order to investigate the conduction mechanism, the energy band of the CuCrO₂ films is constructed based on the grain-boundary scattering.     

Fabrication and properties of p-type K doped Zn1−xMgxO thin film

A series of K doped Zn_1−xMg_xO thin films have been prepared by pulsed laser deposition (PLD). Hall-effect measurements indicate that the films exhibit stable p-type behavior with duration of at least six months. The band gap of the K doped Zn_1−xMg_xO films undergoes a blueshift due to the Mg incorporation. However, photoluminescence (PL) results reveal that the crystallinity decreased with the increasing of Mg content. The fabricated K doped p-type Zn_0.95Mg_0.05O thin film exhibits good electrical properties, with resistivity of 15.21 Ω cm and hole concentration of 5.54 × 10¹⁸ cm⁻³. Furthermore, a simple ZnO-based p-n heterojunction was prepared by deposition of a K-doped p-type Zn_0.95Mg_0.05O layer on Ga-doped n-type ZnO thin film with low resistivity. The p-n diode heterostructure exhibits typical rectification behavior of p-n junctions.     

Electrical and optical properties of tantalum oxide thin films prepared by reactive magnetron sputtering

Tantalum oxide thin films were prepared by using reactive dc magnetron sputtering in the mixed atmosphere of Ar and O₂ with various flow ratios. The structure and O/Ta atom ratio of the thin films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy (XPS). The optical and dielectric properties of the Ta₂O₅ thin films were investigated by using ultraviolet-visible spectra, spectral ellipsometry and dielectric spectra. The results reveal that the structure of the samples changes from the amorphous phase to the β-Ta₂O₅ phase after annealing at 900 °C. The XPS analysis showed that the atomic ratio of O and Ta atom is a stoichiometric ratio of 2.50 for the sample deposited at Ar:O₂ = 4:1. The refractive index of the thin films is 2.11 within the wavelength range 300-1000 nm. The dielectric constants and loss tangents of the Ta₂O₅ thin films decrease with the increase of measurement frequency. The leakage current density of the Ta₂O₅ thin films decreases and the breakdown strength increases with the increase of Ar:O₂ flow ratios during deposition.     

Influence of deposition conditions on mechanical and tribological properties of nanostructured TiN/CNx multilayer films

Nanostructured TiN/CN_x multilayer films were deposited onto Si (100) wafers and M42 high-speed-steel substrates using closed-filed unbalanced magnetron sputtering in which the deposition process was controlled by a closed loop optical emission monitor (OEM) to regulate the flow of N₂ gas. Multilayers with different carbon nitride (CN_x) layer thickness could be attained by varying the C target current (0.5 A to 2.0 A) during the deposition. It was found that the different bilayer thickness periods (i.e. the TiN layer thickness Λ_TiN was fixed at 3.0 nm while the CN_x layer thickness Λ_CNx was varied from 0.3 to 1.2 nm) significantly affected the mechanical and tribological properties of TiN/CN_x multilayer films. These multilayer films were characterized and analyzed by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscopy (AFM), Rockwell-C adhesion test, scratch test, pin-on-disc tribometer, and nanoindentation measurements. XPS analyses revealed that the chemical states, such as TiN, TiC, TiN_xO_y and TiO_2, existed in a TiN layer. Nanoindentation results showed that the hardness was highly dependent on the bilayer thickness. A maximum hardness of ~ 41.0 GPa was observed in a multilayer film at bilayer thickness Λ_TiN = 3.0 nm and Λ_CNx = 0.9 nm. All multilayer films exhibited extreme elasticity with elastic recoveries as high as 80% at 5 mN maximum load. The compressive stresses in the films (in a range of 1.5-3.0 GPa) were strongly related to their microstructure, which depended mainly on the incorporation of nitrogen in the films. By scratch and Rockwell-C adhesion tests, the multilayer films with smaller bilayer thicknesses (Λ_TiN = 3.0 nm, Λ_CNx = 0.3 and 0.6 nm) exhibited the best adhesion and cohesive strength. The critical load value obtained was as high as ~ 78 N for the films with Λ_TiN = 3.0 nm, Λ_CNx = 0.9 nm. The friction coefficient value for a multilayer at Λ_TiN = 3.0 nm and Λ_CNx = 0.9 nm was found to be low 0.11. These adhesive properties and wear performance are also discussed on the basis of microstructure, mechanical properties and tribochemical wear mechanisms.     

Characterization of chromium thin films by sputter deposition

In this study, a systematic investigation on the deposition of Cr-CrO_x bi-layer film was performed by magnetron DC sputtering. The X-ray photoelectron spectrometer (XPS) examining the bare Cr film showed that the peaks of Cr 2P_3/2 and Cr 2P_1/2 appeared in the Cr thin film associated with the presence of a 12 nm oxide layer. The transmission was reduced to zero as the Cr film exceeded 100 nm in thickness. The reflection saturated at a value of ≈55% when the thickness of the Cr film reached 30 nm. The optical density exceeded 3.50 with a Cr film thickness over 150 nm. In order to reduce the reflection of the film to a level of ≤4%, a Cr-CrO_x bi-layer thin film was prepared. Overall, a Cr-CrO_x bi-layer film with the Cr layer 130 nm and the CrO_x layer 40 nm in thickness reported a transmission of zero, a reflection of 3.82% and an optical density of 4.04, all meeting the requirements of anti-reflection black matrix (BM) for display applications.     

Effect of deposition temperature on structural, surface, optical and magnetic properties of pulsed laser deposited Al-doped CdO thin films

The objective of this work is to study the influence of deposition temperature on structural, surface, optical and magnetic properties of the Al doped CdO thin films prepared by pulsed laser deposition (PLD) technique. KrF excimer laser (λ = 248 nm, τ_l = 20 ns, ν = 10 Hz, ?_l = 2.5 J/cm²) was employed for the deposition of thin films. It is observed by XRD results that films grown at room temperature and 100 °C show preferential growth along (1 1 1) and (2 0 0) directions while high temperatures (200-400 °C) lead to preferential growth along the (2 0 0) direction only. The optical constants (n, k, α, and optical band gap energy) of films measured by spectroscopic ellipsometry show strong dependence upon deposition temperature. M-H loop of films, measured by vibrating sample magnetometer, deposited at 25 °C and 100 °C show paramagnetic nature while films deposited at temperatures (200-400 °C) exhibit ferromagnetic character. Scanning electron micrographs show degraded elongated grains at lower deposition temperatures, while smooth and compact surface is observed for films deposited at higher deposition temperatures.     

Synthesis and characterization of sol-gel derived gallium-doped zinc oxide thin films

Gallium-doped ZnO (GZO) semiconductor thin films were prepared by a sol-gel spin coating process. The effects of Ga dopant concentrations on the microstructure, electrical resistivity, optical properties, and photoluminescence (PL) were studied. XRD results showed that all the as-prepared GZO films had a wurtzite phase and a preferred orientation along the [0 0 2] direction. ZnO thin films doped with Ga had lower electrical resistivity, lower RMS roughness, and improved optical transmittance in the visible region. The lowest average electrical resistivity value, 2.8 × 10² Ω cm, was achieved in the ZnO thin films doped with 2% Ga, which exhibited an average transmittance of 91.5%. This study also found that the optical band gap of Ga-doped films was 3.25 eV, slightly higher than that of undoped samples (3.23 eV), and the PL spectra of GZO films showed strong violet-light emission centers at about 2.86 eV (the corresponding wavelength of which is about 434 nm).     

Low temperature processed highly conducting, transparent, and wide bandgap Gd doped CdO thin films for transparent electronics

Gadolinium (Gd) doped cadmium oxide (CdO) thin films are grown at low temperature (100 °C) using pulsed laser deposition technique. The effect of oxygen partial pressures on structural, optical, and electrical properties is studied. X-ray diffraction studies reveal that these films are polycrystalline in nature with preferred orientation along (1 1 1) direction. Atomic force microscopy studies show that these films are very smooth with maximum root mean square roughness of 0.77 nm. These films are highly transparent and transparency of the films increases with increase in oxygen partial pressure. We observe an increase in optical bandgap of CdO films by Gd doping. The maximum optical band gap of 3.4 eV is observed for films grown at 1 × 10⁻⁵ mbar. The electrical resistivity of the films first decreases and then increases with increase in oxygen partial pressure. The lowest electrical resistivity of 2.71 × 10⁻⁵ Ω cm and highest mobility of 258 cm²/Vs is observed. These low temperature processed highly conducting, transparent, and wide bandgap semiconducting films could be used for flexible optoelectronic applications.     

P-type transparent conducting SnO2:Zn film derived from thermal diffusion of Zn/SnO2/Zn multilayer thin films

Highly transparent, p-type conducting SnO₂:Zn thin films are prepared from the thermal diffusion of a sandwich structure of Zn/SnO₂/Zn multilayer thin films deposited on quartz glass substrate by direct current (DC) and radio frequency (RF) magnetron sputtering using Zn and SnO₂ targets. The deposited films were annealed at various temperatures for thermal diffusion. The effect of annealing temperature and time on the structural, electrical and optical performances of SnO₂:Zn films was studied. XRD results show that all p-type conducting films possessed polycrystalline SnO₂ with tetragonal rutile structure. Hall effect results indicate that the treatment at 400 °C for 6 h was the optimum annealing parameters for p-type SnO₂:Zn films which have relatively high hole concentration and low resistivity of 2.389 × 10¹⁷ cm^− 3 and 7.436 Ω cm, respectively. The average transmission of the p-type SnO₂:Zn films was above 80% in the visible light range.     

Effects of deposition parameters on characteristics of carbon coatings on optical fibers prepared by thermal chemical vapor deposition

The effects of deposition parameters on characteristics of carbon coatings on optical fibers prepared by thermal chemical vapor deposition are investigated. The deposition parameters are selected as follows. The CH₄/(CH₄ + N₂) ratio is in the range between 20% and 100%; the temperature is set from 1173 to 1248 K; the working pressure is arranged between 50 and 100 kPa, and the residence time is ranging from 1.47 to 7.37 s. The deposition rate, microstructure, and electrical resistivity of carbon coatings are measured. The low-temperature surface morphology of carbon-coated optical fibers is elucidated. Experimental results indicate that the deposition rate increases with increasing the CH₄/(CH₄ + N₂) ratio, deposition temperature, working pressure, and residence time. The activation energy (= 456 kJ/mol) of carbon deposition from methane was shown to correlate to the activation energy of methane dissociation. The deposition rate is proportional to about first-order of partial pressure of methane, and thus, the deposition process is mainly controlled by the process to create mono-carbon species in the carbon film. As the deposition rate increases, the size and number of particles on the carbon coating surface and electrical resistivity of carbon coatings increase, while the ordered degree, nano-crystallite size, and sp² carbon atoms of the carbon coatings decrease. Additionally, the low-temperature surface morphology of carbon coatings shows that as the carbon coating thickness is large enough to sustain the thermal loading, decreasing the deposition rate is good for producing hermetic optical fiber coatings.     

Characterization of cobalt oxide thin films prepared by a facile spray pyrolysis technique using perfume atomizer

Cobalt oxide (Co₃O₄) thin films were prepared by a facile spray pyrolysis technique using perfume atomizer from aqueous solution of hydrated cobalt chloride salt (CoCl₂·6H₂O) as source of cobalt. The films were deposited onto the amorphous glass substrates kept at different temperatures (300-500 °C). The influences of molar concentration of the starting solution and substrate temperature on the structural, morphological and optical properties of (Co₃O₄) thin films were studied. It was found from X-ray diffraction (XRD) analysis that the films prepared with molar concentration greater than 0.025 M/L were polycrystalline spinel type cubic structure. The preferred orientation of the crystallites of these films changes gradually from (6 2 2) to (1 1 1) when the substrate temperature increases. By Raman spectroscopy, five Raman active modes characteristic of Co₃O₄ spinel type cubic structure were found and identified at 194, 484, 522, 620 and 691 cm⁻¹. The scanning electron microscopy (SEM) images showed micro porous structure with very fine grains less than 50 nm in diameter. These films exhibited also a transmittance value of about 70% in the visible and infra red range.     

Low temperature sputter deposition of SnOx:Sb films for transparent conducting oxide applications

SnO_x:Sb films have been prepared by reactive dc magnetron sputtering from a metallic target, with the aim of evaluating the potential of SnO_x:Sb as an attractive low-cost alternative to In₂O₃:Sn (ITO) for TCO applications. The deposition was performed without any additional heating of the substrates. The films were subsequently analysed regarding their optical, electrical and structural properties. Our results show that there is only a narrow process window for the sputter deposition of transparent and conducting tin oxide films at low temperature. A sharp minimum in resistivity of 4.9 mΩ cm is observed at an oxygen content of approximately 17% in the sputtering gas. Under these deposition conditions, the SnO₂:Sb films turn out to be both highly transparent and crystalline. At lower oxygen content (10-15%) the SnO_x:Sb films are substoichiometric, as revealed by Rutherford backscattering, and show a low transmission and high resistivity due to numerous defects and the presence of the SnO phase. At higher oxygen content (> 17%) excess oxygen is incorporated into the films, which is attributed to an increase of oxygen ion bombardment. This leads to a degradation of the electrical properties and a decrease of the density of the films, whilst the optical transmittance slightly improves.     

Effect of Ag nanoparticle size on the plasmonic photocatalytic properties of TiO2 thin films

Photocatalytic TiO₂ films combined with Ag nanoparticles (NPs) embedded-SiO₂ films were fabricated by means of a RF magnetron sputtering and subsequent rapid thermal annealing (RTA). X-ray diffraction results show that the TiO₂ films have anatase phase when annealed at 500 °C. The Ag NPs were formed by deposition and subsequent annealing at 600 °C. Scanning electron microscopy (SEM) results show that the density of the NPs decreases with increasing Ag film thickness. For example, the average NP diameter varies from ~ 19.3 to ~ 55.9 nm as the film thickness increases from 2 to 12 nm. Transmittance measurements show that as the Ag NP size decreases, the plasmonic peaks shift towards the shorter-wavelength region and become narrower. It is further shown that under UV-illumination (352 nm), all the TiO₂ films with the Ag NPs show higher methylene blue decomposition rates compared to the TiO₂ only films and the TiO₂ films with Ag NP (a 7 nm-thick Ag film) show the best decomposition rate among the samples possibly due to the combined effects of optimized localized field amplification and radiative efficiency.     

Crystallization process and thermal stability of Ge1Cu2Te3 amorphous thin films for use as phase change materials

The crystallization kinetics of amorphous Ge₁Cu₂Te₃ (GCT) films prepared by sputter deposition were investigated by differential scanning calorimetry under non-isothermal conditions. An exothermic peak due to crystallization was observed in the temperature range 230-270 °C. It was found that the local activation energy for crystallization is almost constant when the crystallization fraction is less than about 0.15 and then monotonically decreases with increasing crystallization fraction, which indicates that the crystallization of amorphous GCT films is a multi-step mechanism. The local Avrami exponent decreased from more than 5 to 1.7 with increasing crystallization fraction. It was demonstrated by the Ozawa method that GCT amorphous films show a higher thermal stability than Ge₂Sb₂Te₅ amorphous films, with an estimated failure time of over 70 years at 125 °C, which is well beyond the data retention requirements of the International Technology Roadmap for Semiconductors. In addition, the thickness change in GCT amorphous films accompanying crystallization was measured by atomic force microscopy. The GCT amorphous film was found to show a thickness increase of only 2.0% on crystallization, which is desirable to enhance the endurance of phase change random access memory devices.