Effects of sputtering pressure and post-metallization annealing on the physical properties of rf-sputtered Y2O3 films

Y₂O₃ thin films were prepared by rf-sputtering under various sputtering pressures at room temperature. Spectroscopic ellipsometer, X-ray diffraction and semiconductor parameter analyzer were used to characterize the studied films. The results show the crystallinity and leakage current density of the films improved with decreasing sputtering pressure. The effects of post-metallization annealing (PMA) on optical, structural and electrical properties of the films were also evaluated. It is found that PMA can significantly enhance the electrical performance of Y₂O₃ film, and the lowest leakage current is found to be 1.54 × 10⁻⁸ A/cm² at 1 MV/cm for the samples treated at 350 °C for 30 min. The leakage current mechanisms were discussed as well, which reveals that space charge limited current dominates the as-deposited films while Schottky mechanism describes the PMA treated ones well.     

Production of nanoscale Ba(Zn1/3Nb2/3)O3 microwave dielectric ceramics by polymerised complex method

Ba(Zn_1/3Nb_2/3)O₃ nanoparticles have been synthesized by a polymerised complex method by using precursor materials of barium nitrate, zinc acetate, niobium oxide, hydrofluoric acid and citric acid. Thermal decomposition characteristics and crystallization behavior of the powders were investigated by the thermogravimetric and differential thermal analysis, X-ray diffractometer and Fourier transform infrared spectroscopy. Ba(Zn_1/3Nb_2/3)O₃ phase started to form at low temperature of 400 °C and, single phase Ba(Zn_1/3Nb_2/3)O₃ perovskite structure was obtained at 1000 °C. Microstructural investigation revealed that the major particle size of Ba(Zn_1/3Nb_2/3)O₃ nanoparticles were in the range of 80–110 nm with spherical morphology and homogeneous size distribution. But the powders also contained some agglomeration.     

Effect of Bi2O3 on structure and wetting studies of Bi2O3-ZnO-B2O3 glasses

Glasses with different Bi₂O₃ contents (37-42 mol%) have been prepared by conventional melt quench technique. The IR and Raman studies indicate that these glasses are made up of [BiO₆], [BiO₃], [BO₃] and [BO₄] basic structural units. The vibrations of [BiO₃] and [BO₃] become stronger as the content of Bi₂O₃ increases, which makes glass structure loosened. Viscosity of the glasses was measured by using a Rheotronic III paralleled plate rheometry, which shows that the viscosity of glass samples decreased when the content of Bi₂O₃ increased at the same temperature (400-460 °C). The temperature range which suits for glasses sealing was calculated by using the approximation of Arrhenian behaviour. The wetting performance of Bi₂O₃-ZnO-B₂O₃ glasses was described by using high-temperature microscope, which also proves that the structure of investigated Bi₂O₃-ZnO-B₂O₃ glasses become loosened due to the increasing of the content of Bi₂O₃.     

Effect of lanthanum doping on linear and nonlinear-optical properties of Bi3TiNbO9 thin films

Lanthanum doped Bi₃TiNbO₉ thin films (LBTN-x, La³⁺ contents x = 5%, 15%, 25% and 35 mol.%) with layered perovskite structure were fabricated on fused silica by pulsed laser deposition method. Their linear and nonlinear optical properties were studied by transmittance measurement and Z-Scan method. All films exhibit good transmittance (>55%) in visible region. For lanthanum doping content are x = 5%, 15% and 25 mol.%, the nonlinear absorption coefficient of LBTN-x thin films increases with the La³⁺ content, then it drops down at x = 35 mol.% when the content of La³⁺ in (Bi₂O₂)²⁺ layers is high enough to aggravate the orthorhombic distortion of the octahedra. We found that, 25 mol.% is the optimal La³⁺ content for LBTN-x thin films to have the largest nonlinear absorption coefficient making the LBTN-x film a promising candidate for absorbing-type optical device applications.     

Piezoelectric and dielectric properties of Dy2O3-doped (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ + x wt% Dy₂O₃ with x = 0-0.3 ceramics were synthesized by conventional solid-state processes. The effects of Dy₂O₃ on the microstructure, the piezoelectric and dielectric properties were investigated. X-ray diffraction pattern confirmed that the coexistence of tetragonal and rhombohedral phases in the (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ composition was not changed by adding 0.05-0.3 wt% Dy₂O₃. SEM images indicate that all the ceramics have pore-free microstructures with high density, and that doping of Dy₂O₃ inhibits the grain growth of the ceramics. The addition of Dy₂O₃ shows the double effects on decreasing the piezoelectric and dielectric properties for 0 < x < 0.15 when Dy³⁺ ions substitute B-site Ti⁴⁺ ions, and increasing the properties for 0.15 < x < 0.3 when Dy³⁺ ions enters into A-site of the perovskite structure. The optimum electric properties of piezoelectric constant d₃₃ = 170 pC/N and the dielectric constant ?_r = 1900 (at a frequency of 1 kHz) are obtained at x = 0.3.     

P-type transparent conducting SnO2:Zn film derived from thermal diffusion of Zn/SnO2/Zn multilayer thin films

Highly transparent, p-type conducting SnO₂:Zn thin films are prepared from the thermal diffusion of a sandwich structure of Zn/SnO₂/Zn multilayer thin films deposited on quartz glass substrate by direct current (DC) and radio frequency (RF) magnetron sputtering using Zn and SnO₂ targets. The deposited films were annealed at various temperatures for thermal diffusion. The effect of annealing temperature and time on the structural, electrical and optical performances of SnO₂:Zn films was studied. XRD results show that all p-type conducting films possessed polycrystalline SnO₂ with tetragonal rutile structure. Hall effect results indicate that the treatment at 400 °C for 6 h was the optimum annealing parameters for p-type SnO₂:Zn films which have relatively high hole concentration and low resistivity of 2.389 × 10¹⁷ cm^− 3 and 7.436 Ω cm, respectively. The average transmission of the p-type SnO₂:Zn films was above 80% in the visible light range.     

Effect of Ag-doping on crystal structure and high temperature thermoelectric properties of c-axis oriented Ca3Co4O9 thin films by pulsed laser deposition

Ag-doped Ca₃Co₄O₉ thin films with nominal composition of Ca_3−xAg_xCo₄O₉ (x = 0∼0.4) have been prepared on sapphire (0 0 0 1) substrates by pulsed laser deposition (PLD). Structural characterizations and surface chemical states analysis have shown that Ag substitution for Ca in the thin films can be achieved with doping amount of x ≤ 0.15; while x > 0.15, excessive Ag was found as isolated and metallic species, resulting in composite structure. Based on the perfect c-axis orientation of the thin films, Ag-doping has been found to facilitate a remarkable decrease in the in-plane electrical resistivity. However, if doped beyond the substitution limit, excessive Ag was observed to severely reduce the Seebeck coefficient. Through carrier concentration adjustment by Ag-substitution, power factor of the Ag-Ca₃Co₄O₉ thin films could reach 0.73 mW m⁻¹ K⁻² at around 700 K, which was about 16% higher than that of the pure Ca₃Co₄O₉ thin film.     

Synthesis of monodispersed ultrafine Bi2S3 nanocrystals

Monodispersed ultrafine Bi₂S₃ nanocrystals of ∼3 nm were synthesized via a facile and mild method, in which thioacetamide and bismuth oleate complex were used as the sulfur and bismuth precursors, respectively. The obtained Bi₂S₃ nanocrystals possessed a high surface area of 305 m² g⁻¹. The nanostructures of Bi₂S₃ nanocrystals were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and selective area electron diffraction (SAED) techniques. The optical property of the Bi₂S₃ nanocrystals was studied by photoluminescence spectroscopy. A remarkable blue shift and a band gap of ∼1.5 eV were observed. The shape of the Bi₂S₃ nanocrystals could be tuned by adjusting the initial Bi/S molar ratio and reaction temperature, respectively. A possible burst nucleation mechanism for this monodispersed ultrafine Bi₂S₃ nanocrystals was proposed.     

Low temperature growth of nanocrystalline TiO2 films with Ar/O2 low-field helicon plasma

TiO₂ thin films were deposited on silicon wafer substrates by low-field (1 < B < 5 mT) helicon plasma assisted reactive sputtering in a mixture of pure argon and oxygen. The influence of the positive ion density on the substrate and the post-annealing treatment on the films density, refractive index, chemical composition and crystalline structure was analysed by reflectometry, Rutherford backscattering spectroscopy (RBS) and X-ray diffraction (XRD). Amorphous TiO₂ was obtained for ion density on the substrate below 7 × 10¹⁶ m^− 3. Increasing the ion density over 7 × 10¹⁶ m^− 3 led to the formation of nanocrystalline (~ 15 nm) rutile phase TiO₂. The post-annealing treatment of the films in air at 300 °C induced the complete crystallisation of the amorphous films to nanocrystals of anatase (~ 40 nm) while the rutile films shows no significant change meaning that they were already fully crystallised by the plasma process. All these results show an efficient process by low-field helicon plasma sputtering process to fabricate stoichiometric TiO₂ thin films with amorphous or nanocrystalline rutile structure directly from low temperature plasma processing conditions and nanocrystalline anatase structure with a moderate annealing treatment.     

Epitaxial 0.65PbMg1/3Nb2/3O3-0.35PbTiO3 (PMN-PT) thin films grown on LaNiO3/CeO2/YSZ buffered Si substrates

Ferroelectric PMN-PT thin films with a thickness of 600 nm were epitaxially grown on buffered Si (0 0 1) substrates at a substrate temperature that ranged from 550 to 700 °C using pulsed laser deposition (PLD). LaNiO₃ (LNO) electrode thin films with a resistivity of ∼1900 μΩ cm were epitaxially grown on CeO₂/YSZ buffered Si (0 0 1) substrates. The PMN-PT thin films grown at 600 °C on LNO/CeO₂/YSZ/Si substrates had a pure perovskite and epitaxial structure. The PMN-PT films exhibited a high dielectric constant of about 1818 and a low dissipation factor of 0.04 at a frequency of 10 kHz. Polarization-electric-field (P-E) hysteresis characteristics, with a remnant polarization of 11.1 μC/cm² and a coercive field of 43 kV/cm, were obtained in the epitaxial PMN-PT films.     

A giant polarization value in bismuth ferrite thin films

An approach is used to improve the remanent polarization of BiFeO₃ thin films, where the BiFe_0.96Zn_0.04O₃ thin film with (1 1 1) orientation was grown on the SrRuO₃/SrTiO₃(1 1 1) substrate by rf sputtering. A higher dielectric constant and a lower dielectric loss are demonstrated for the BiFe_0.96Zn_0.04O₃ thin film as compared with those of pure BiFeO₃ thin film. The introduction of Zn deteriorates the magnetic properties of BFO thin films. A giant polarization value of 2P_r ∼ 268.5 μC/cm² is induced for the BiFe_0.96Zn_0.04O₃ thin film as confirmed by PUND, owing to the (1 1 1) orientation, the introduction of Zn, and a low leakage current density.     

Synthesis of nanocrystalline nickel-zinc ferrite (Ni0.8Zn0.2Fe2O4) thin films by chemical bath deposition method

The nickel-zinc ferrite (Ni_0.8Zn_0.2Fe₂O₄) thin films have been successfully deposited on stainless steel substrates using a chemical bath deposition method from alkaline bath. The films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), static water contact angle and cyclic voltammetry measurements. The X-ray diffraction pattern shows that deposited Ni_0.8Zn_0.2Fe₂O₄ thin films were oriented along (3 1 1) plane. The FTIR spectra showed strong absorption peaks around 600 cm⁻¹ which are typical for cubic spinel crystal structure. SEM study revealed compact flakes like morphology having thickness ∼1.8 μm after air annealing. The annealed films were super hydrophilic in nature having a static water contact angle (θ) of 5°.The electrochemical supercapacitor study of Ni_0.8Zn_0.2Fe₂O₄ thin films has been carried out in 6 M KOH electrolyte.The values of interfacial and specific capacitances obtained were 0.0285 F cm⁻² and 19 F g⁻¹, respectively.     

Fabrication and characterization of ceramic thin films by RF magnetron sputtering using Zn-enriched (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 as target

Dielectric ceramic thin film was fabricated on SiO₂ (1 1 0) substrates by radio frequency (RF) magnetron sputtering method using a Zn-enriched (Ba_0.3Sr_0.7)(Zn_1/3Nb_2/3)O₃ target. The microstructure, components, and morphological properties of the thin films were characterized thoroughly. The results reveal that the main phases of the thin films are Ba_xSr_1−xNb₂O₆, which are of different compositions from that of the ceramic target due to Zn loss. The thin films are polycrystalline and of dense structure with uniform grain sizes and well-defined grain boundaries.     

Low temperature sintering and microwave dielectric properties of (Mg0.7Zn0.3)0.95Co0.05TiO3 ceramics with BaCu(B2O5) additions

The effects of BaCu(B₂O₅) additives on the sintering temperature and microwave dielectric properties of (Mg_0.7Zn_0.3)_0.95Co_0.05TiO₃ ceramics were investigated. The (Mg_0.7Zn_0.3)_0.95Co_0.05TiO₃ ceramics were not able to be sintered below 1000 °C. However, when BaCu(B₂O₅) were added, they were sintered below 1000 °C and had the good microwave dielectric properties. It was suggested that a liquid phase with the composition of BaCu(B₂O₅) was formed during the sintering and assisted the densification of the (Mg_0.7Zn_0.3)_0.95Co_0.05TiO₃ ceramics at low temperature. BaCu(B₂O₅) powders were produced and used to reduce the sintering temperature of the (Mg_0.7Zn_0.3)_0.95Co_0.05TiO₃ ceramics. Good microwave dielectric properties of Q × f = 35,000 GHz, ?_r = 18.5.0 and τ_f = −51 ppm/°C were obtained for the (Mg_0.7Zn_0.3)_0.95Co_0.05TiO₃ ceramics containing 7 wt.% mol% BaCu(B₂O₅) sintered at 950 °C for 4 h.     

Enhanced thermoelectric properties of n-type Bi2Te3-based nanocomposite fabricated by spark plasma sintering

Highly dense n-type Bi₂Te₃-based thermoelectric materials dispersed with x vol.% γ-Al₂O₃ nanoparticles (x = 0, 0.4, 1.0, 1.5) were fabricated by spark plasma sintering method. The effects of γ-Al₂O₃ addition on microstructure and the thermoelectric properties were studied. It was found that γ-Al₂O₃ nanoparticles locate both at grain boundaries and inside Bi₂Se_0.3Te_2.7 grains. The nanoparticles induce both potential barrier scattering effect and additional phonon scattering effect, which simultaneously enhance the Seebeck coefficient and reduce the lattice thermal conductivity of the nanocomposites in the measured temperature range of 300-500 K, respectively. The maximum dimensionless figure of merit (ZT_max) reaches up to 0.99 for the sample with x = 1.0 at 400 K, which is 35% improvement over the Bi₂Te₃-based matrix. More importantly, the average ZT value of the sample increases from 0.65 to 0.91 in the temperature range 300-500 K, making the nanocomposites much more applicable in cooling and power generation.     

Microwave ECR plasma CVD of cubic Y2O3 coatings and their characterization

Yttrium oxide (Y₂O₃) thin films are deposited by microwave electron cyclotron resonance (ECR) plasma assisted metal organic chemical vapour deposition (MOCVD) process at a substrate temperature of 350 °C using indigenously developed metal organic precursors (2,2,6,6-tetra methyl-3,5-heptane dionate) yttrium, commonly known as Y(thd)₃ synthesized by ultrasound method. The deposited coatings are characterized by X-ray photoelectron spectroscopy, glancing angle X-ray diffraction, scanning electron microscopy, EDS and infrared spectroscopy. The characterization results indicate that it is possible to deposit non-porous coatings with excellent uniformity of a single phase cubic Y₂O₃ on various substrates by this process at reasonably low substrate temperature that is desirable in various manufacturing processes.     

Nano-grain Al2O3 crystals grown by sputtering of aluminium on CoCrPt thin films for potential application in ultra-high-density recording media

Designing supraceramic assemblies based on Al₂O₃ has remained a challenge due to the problems associated with the suitable dispersion in neat compounds and ability to control the preferred orientation in a unique fashion. Herein, granular HCP-(CoCrPt)_100−X(Al₂O₃)_X (X represents the percent weight) thin films with Si(1 0 0) substrates have been fabricated using sputtering technique followed by annealing treatment. Structural and magnetic properties of thin film have been investigated for potential application in magnetic recording media. It was shown that coercivity increased from 0.5 to 2.5 kOe by increasing the nano-grain Al₂O₃ content in the CoCrPt magnetic layers. In CoCrPt-Al₂O₃ thin films coercivity of 2.5 kOe has been obtained with increasing the Al₂O₃ content from 3 to 13 wt.% in the annealed thin films. The structural properties of the samples were studied using X-ray diffraction (XRD) and transmission electron microscope (TEM) equipped with selected area electron diffraction (SAED). The magnetic properties of the samples were measured with a vibrating sample magnetometer (VSM). The VSM results showed that the HCP-CoCrPt-Al₂O₃ granular films are a promising candidate for ultra-high-density recording media because of its low Al₂O₃ content and simple manufacturing process.     

Photocatalytic performance of nano-photocatalyst from TiO2 and Fe2O3 by mechanochemical synthesis

Nano-particles of homogeneous solid solution between TiO₂ and Fe₂O₃ (up to 10 mol%) have been prepared by mechanochemical milling of TiO₂ and yellow Fe₂O₃/red Fe₂O₃/precipitated Fe (OH)₃ using a planetary ball mill. Such novel solid solution cannot be prepared by conventional co-precipitation technique. A preliminary investigation of photocatalytic activity of mixed oxide (TiO₂/Fe₂O₃) on photo-oxidation of different organic dyes like Rhodamine B (RB), Methyl orange (MO), Thymol blue (TB) and Bromocresol green (BG) under visible light (300-W Xe lamp; λ > 420 nm) showed that TiO₂ having 5 mol% of Fe₂O₃ (YFT1) is 3-5 times higher photoactive than that of P25 TiO₂. The XRD result did not show the peaks assigned to the Fe components (for example Fe₂O₃, Fe₃O₄, FeO₃, and Fe metal) on the external surface of the anatase structure in the Fe₂O₃/TiO₂ attained through mechanochemical treatment. This meant that Fe components were well incorporated into the TiO₂ anatase structure. The average crystallite size and particle size of YFT1 were found to be 12 nm and 30 ± 5 nm respectively measured from XRD and TEM conforming to nanodimensions. Together with the Fe component, they absorbed wavelength of above 387 nm. The band slightly shifted to the right without tail broadness, which was the UV absorption of Fe oxide in the Fe₂O₃/TiO₂ particle attained through mechanochemical method. This meant that Fe components were well inserted into the framework of the TiO₂ anatase structure. EPR and magnetic susceptibility show that Fe³⁺ is in low spin state corresponding to μ_B = 1.8 BM. The temperature variation of μ_B shows that Fe³⁺ is well separated from each other and does not have any antiferromagnetic or ferromagnetic interaction. The evidence of Fe³⁺ in TiO₂/Fe₂O₃ alloy is also proved by a new method that is redox titration which is again support by the XPS spectrum.     

Structural, morphological and optical properties of Bi2−xSbxSe3 thin films grown by electrodeposition

Ternary single-phase Bi_2−xSb_xSe₃ alloy thin films were synthesized onto Au(1 1 1) substrates from an aqueous solution containing Bi(NO₃)₃, SbCl₃, and SeO₂ at room temperature for the first time via the electrodeposition technique. The electrodeposition of the thin films was studied using cyclic voltammetry, compositional, structural, optical measurements and surface morphology. It was found that the thin films with different stoichiometry can be obtained by controlling the electrolyte composition. The as-deposited films were crystallized in the preferential orientation along the (0 1 5) plane. The SEM investigations show that the film growth proceeds via nucleation, growth of film layer and formation of spherical particles on the film layer. The particle size and shape of Bi_2−xSb_xSe₃ films could be changed by tuning the electrolyte composition. The optical absorption spectra suggest that the band gap of this alloy varied from 0.24 to 0.38 eV with increasing Sb content from x = 0 to x = 0.2.     

Enhancement of upconversion luminescence of Y2O3:Er nanocrystals by codoping Li-Zn

The upconversion (UC) luminescence in sol-gel synthesized Li⁺, Zn²⁺, or Li⁺-Zn²⁺ codoped Y₂O₃:Er³⁺ nanocrystals were investigated under the excitation of a 970 nm diode laser. Compared to undoped Y₂O₃:Er³⁺ samples, proper doping of Li⁺-Zn²⁺ leads to an drastic increase of the UC luminescence centered at 560 nm by a factor of 28. The UC luminescence enhancement is a result of the increased lifetime of the intermediate state ⁴I_11/2 (Er). The intensity ratio of the green over red emissions (green/red) is also affected by the codoping of Zn²⁺, Li⁺ and Li⁺-Zn²⁺ ions. Our results demonstrated that the Li⁺-Zn²⁺ codoping in Y₂O₃:Er³⁺ phosphors produced remarkable enhancement of the UC luminescence and green/red ratio, making this nanocrystal a promising candidate for photonic and biological applications.