基于TMS320LF2812的并联型有源电力滤波器的设计与实现

针对谐波抑制和无功补偿的问题,对有源电力滤波器进行一系列研究,阐述了有源电力滤波器的基本原理以及控制策略。基于TMS320LF2812设计了有源电力滤波器,包括DSP控制板、电压采样电路,电流采样电路以及IPM功率单元的设计,并给出了有源电力滤波器的软件设计。最后利用MATLAB仿真软件对所涉及的有源电力滤波器进行仿真,验证了有源滤波器系统的正确性以及谐波补偿电流和滞环比较控制模块的有效性。     

一种新型恒频滞环电流控制策略研究

并联型有源电力滤波器的变环宽滞环电流控制方法是根据电流幅值的变化适时调整滞环宽度,可有效保证滤波器的补偿性能,控制开关器件的开关频率。在传统的变环宽滞环电流控制算法的基础上,加入了电流限幅和频率PI反馈控制环节,限制了较大电流的波动,提高了频率的控制精度,以及有源电力滤波器的电流补偿性能。Matlab仿真结果表明,采用新型恒频滞环电流控制算法进行电流跟踪补偿时,系统的电流总畸变率小于采用传统变环宽滞环电流控制算法时的总谐波畸变率。     

并联型有源电力滤波器的SVPWM控制技术研究

针对有源滤波器常规滞环、三角载波控制时,开关频率波动大,响应慢的缺点,引入了空间电压矢量算法。在K步时,假定K+1步,APF的补偿电流完全跟踪上了谐波指令电流,再根据APF离散的数学模型及空间电压矢量调制模块,确定第K+1步的开关管驱动信号,以达到快速补偿谐波电流的目的。仿真实验表明,基于SVPWM控制的有源滤波器具有开关频率固定,动态响应快,补偿精度高的优点。     

基于磁通补偿原理的有源电力滤波器

根据电力电子系统的磁通补偿原理。介绍了一种基于磁通补偿原理和并联变压器谐波阻抗控制的有源电力滤波器的设计方案,给出了采用单位功率因数控制策略控制有源电力滤波器的基本结构和谐波电流检测方法。同时通过仿真实验,给出了对滤波器进行补偿的补偿电流和系统电流的波形。     

空间矢量脉宽调制在有源滤波器中的应用

文章针对典型的三相整流电路中产生的谐波对电网产生的影响,研究易于数字化的SVPWM,将其应用于并联有源电力滤波器内层跟踪控制中,给出一种补偿功能较为完善的并联有源电力滤波器及其控制方法。仿真结果表明：SVPWM调制用于并联有源滤波控制可以明显改进补偿的动态性能,提高滤波效果。     

基于单周控制的电铁有源电力滤波器的研究

补偿电流的控制方法是实现有源电力滤波器功能的核心环节,本文采用单周控制的双向互补控制策略的单相有源电力滤波器能对电铁系统中的谐渡电流起到很好的补偿作用,并建立了以双向互补控制策略为补偿电流控制方法的仿真模型,仿真结果表明单用控制技术可以用于电铁供电系统的有源电力滤波器的电流控制中,并且还能有效地滤除电力机车中的绝大部分...     

有源电力滤波器电流控制PI校正研究

采用PI校正方法对并联有源电力滤波器电流环进行控制。通过对并联有源电力滤波器的开环幅频特性分析和PI校正分析,得到了并联有源电力滤波器电流环控制的校正参数。通过仿真实验,对有源电力滤波器的补偿精度进行分析,结果证明该校正方法能够取得较好的补偿效果。     

基于DSP并联有源电力滤波器的研究

以并联有源电力滤波器为研究对象,并对其拓扑结构、补偿分量的检测算法、控制策略等问题做了较系统的研究,在该基础上介绍一种基于DSP的并联型有源电力滤波器的设计。通过仿真实验对有源电力滤波器数学模型、检测算法及控制策略的有效性和实用性进行了验证。结果表明所设计的有源滤波器具有良好的谐波补偿特性、自适应补偿能力。     

基才三相四线APF的模糊直接反馈控制

为解决三相四线有源电力滤波器的非线性控制问题,时三相四线有源电力滤波器进行电路模型分析,提出采用Takagi-Sugeno模糊直接反馈控制的方法,对电源电流进行模糊直接反馈控制,快速地实现了三相四线有源电力滤波器的非线性电流补偿。采用并行分布补偿的方法设计了模糊反馈控制器,将三相四线有源电力滤波器的非线性问题线性化,在稳定性条件下求解得线性矩阵不等式,得到无功功率及非线性电流全补偿控制策略的状态反馈增益．仿真及实验结果验证了此模糊直接反馈控制的有效性。     

有源电力滤波器空间矢量滞环控制的研究

针对因非线性负载引起的电网谐波污染问题,引入有源电力滤波器(Active power filter,APF)进行治理.分析滞环比较法的工作过程并指出不足,引入空间矢量法解决输出电压相间干扰问题.改进APF的控制策略,把滞环比较和空间矢量结合起来实现电流跟踪控制.最后通过MATLAB/Simulink仿真,比较两种控制策...     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.