Electrically Enhanced Readout System for a High‐Frequency CMOS‐MEMS Resonator

The design of a CMOS clamped‐clamped beam resonator along with a full custom integrated differential amplifier, monolithically fabricated with a commercial 0.35 μm CMOS technology, is presented. The implemented amplifier, which minimizes the negative effect of the parasitic capacitance, enhances the electrical MEMS characterization, obtaining a 48 × 10⁸ resonant frequency‐quality factor product (Q×f_res) in air conditions, which is quite competitive in comparison with existing CMOS‐MEMS resonators.