磁光记录用稀土－过渡族金属合金非晶薄膜的研究

本文采用射频磁控溅射技术和镶嵌靶，在宽的成分范围制备了不同厚度（３０～７００ｎｍ）、均匀的ＧｄＴｂＦｅＣｏ四元合金非晶薄膜。用透射电镜系统地研究了溅射气体氩气压力和射频功率对ＧｄＴｂＦｅＣｏ合金薄膜显微结构和形貌的影响，并用自制的旋转检偏器装置测量了不同条件下沉积的ＧｄＴｂＦｅＣｏ薄膜的克尔磁光旋转角。实验结果表明，沉积条件对ＧｄＴｂＦｅｃＯ合金薄膜的显微结构、磁光性能及环境稳定性有显著的影响。因此，通过调整溅射工艺参数能够制备无网状结构的ＧｄＴｂＦｅＣｏ合金薄膜，从而能改善磁光性能和环境稳定性。     

溅射法镀二氧化钛薄膜靶材及工艺研究进展

介绍了溅射法镀膜的基本原理，阐述了溅射法镀二氧化钛薄膜用靶材及相应溅射镀膜工艺的研究现状。溅射镀Tio2薄膜用靶材主要有金属钛、二氧化钛和“非化学计量”二氧化钛靶材3大类。由于钛的氧化态及靶材导电性不同，它们对溅射工艺（如溅射气氛等）有一定具体的要求，通过对靶材和相应工艺进行分析比较，指出应用“非化学计量”靶材是溅射法制备二氧化钛薄膜技术发展的重要方向。     

反应溅射法在蓝宝石衬底上制备CeO2缓冲层

用金属铈作为靶材,采用射频反应磁控溅射法在（1 102）蓝宝石衬底上制备C轴取向CeO2外延薄膜缓冲层。结果表明在温度低于450℃或溅射功率低于50 W的条件下CeO2薄膜呈（111）取向生长;升高温度和功率CeO2薄膜的（111）取向减弱,（002）取向增强;在温度高于750℃或溅射功率高于120 W条件下CeO2薄膜呈（111）取向和（002）取向混合生长。结合X射线衍射仪和原子力显微镜表征CeO2薄膜的结构和表面形貌,获得在最优化条件下（衬底温度在680℃左右,溅射功率在80 W左右,溅射气压在25 Pa,氩氧比在15∶1）制备的CeO2薄膜具有优良的面内面外取向和平整的表面。     

靶材热处理温度对磁控溅射Mo薄膜组织和性能的影响

采用磁控溅射设备和经过不同温度热处理的Mo靶材,以相同的溅射工艺参数,在Si基片上制备了Mo金属薄膜,研究了靶材的热处理温度对Mo薄膜组织和性能的影响。研究结果发现,所制备Mo薄膜均呈现（110）晶面择优取向,而靶材热处理温度的升高能够提高（110）晶面的择优取向程度。所有薄膜均为T型低温抑制生长。比较结果表明：经1 200℃热处理的Mo靶材溅射率最高（18.5 nm/min）,且其溅射膜具有较小的方阻值和较好的厚度均匀性,综合性能最优。     

中频磁控溅射制备锰铜传感器用合金薄膜的工艺

利用镀膜技术制作锰铜传感器,可以实现传感器的超薄化,提高传感器的灵敏度和线性度。改变溅射功率参数,采用中频磁控溅射技术在玻璃(SiO2)衬底上制备出一系列锰铜镍合金薄膜,重点研究沉积条件对薄膜式锰铜传感器薄膜结构、表面形貌等性能的影响。采用三维形貌仪测试薄膜厚度和计算沉积速率;采用原子力显微镜(AFM)研究薄膜的表面特征;采用X射线衍射(XRD)分析了热处理前后薄膜的微观结构;并采用直读光谱仪(DRS)测试溅射靶材和薄膜的成分。研究结果表明:沉积速率随溅射功率增加而增加,溅射功率达到1 kW后沉积速率保持在100 nm·min-1;溅射功率也会明显的影响薄膜的表面形貌,薄膜的表面粗糙度RMS随溅射功率的增加而减小;XRD分析结果表明溅射功率对薄膜的微观结构影响不大,样品的微观结构在热处理前后没有显著变化,只是热处理后样品观察到了微弱的Mn微观结构取向;溅射功率变化对薄膜的成分影响较小,不同功率沉积的薄膜样品的成分相近。     

射频反应磁控溅射制备氧化铬薄膜技术及性能

研究了采用射频反应溅射方法制备氧化铬耐磨镀层的技术和薄膜的性能.结果表明,采用金属靶材进行射频反应溅射时,由于靶材与反应气体的反应,会出现两种溅射模式,即金属态溅射和非金属态溅射,非金属态溅射模式的沉积速率很低.氧化铬薄膜的硬度主要决定于薄膜中Cr₂O₃含量,在供氧量不足时会生成低硬度的CrO,制备高硬度氧化铬薄膜需要采用尽可能高的氧流量进行溅射.采用在基片附近局域供氧,可以实现高溅射速率下制备出高硬度的氧化铬薄膜.     

钼靶材变形量及热处理对薄膜微观组织及性能的影响

通过研究靶材变形量及热处理工艺对溅射薄膜的微观组织、表面粗糙度及晶形的影响,结果表明:变形量为80%的钼靶材溅射制备的薄膜晶化程度优于变形量小的靶材溅射薄膜;溅射相同的薄膜厚度,随着靶材变形量的增大,溅射薄膜的方阻越大;1 100℃退火靶材溅射薄膜的粗糙度最小,表面颗粒最细小均匀,晶粒取向明显。     

YBCO高温超导靶材制备工艺研究

进行了用钇钡铜氧（ＹＢＣＯ）系高温超导粉制备磁控和激光溅射超导薄膜用靶材的工艺研究。对靶材原料粉末的质量要求和制靶工艺进行了探讨，对影响靶材质量进而影响膜材质量的主要因素（如成分、纯度、均匀性、粒度及超导电性等）进行了研究。多家超导薄膜研究单位对本工艺靶材的使用结果证明了材料的优良品质，采用本工艺研制的大直径环形靶制出的超导薄膜，Ｊｃ值均在１０￣６Ａ／ｃｍ￣２水平。     

溅射参数对SmCo/Cr薄膜铬底层晶面取向及磁学性能的影响

采用直流磁控溅射法制备SmCo／Cr薄膜磁记录材料，通过改变Cr底层制备过程中的功率、靶基距、溅射压强和溅射时间，得到了磁性能不同的SmCo／Cr薄膜。利用X射线衍射法对Cr底层晶面取向和磁控溅射参数之间的关系进行了研究，结果表明：如果改变溅射参数，使沉积cr原子获得较大的能量，则有利于Cr底层最终以(110)晶面择优取向。本实验中Cr底层以(110)晶面择优取向的最佳实验条件为：溅射功率在50～70w左右，靶基距为6cm，压强为0．5Pa，溅射时间为15min。利用振动样品磁强计(VSM)测定SmCo／Cr薄膜的磁学性能，结果表明，如果Cr底层能以(110)晶面择优取向，所得到的SmCo／Cr薄膜的磁学性能较好。     

磁控溅射与电子束蒸发制备Ti薄膜性能的研究

为了研究不同制备方法对薄膜性能的影响，分别利用磁控溅射法和电子束蒸发法在长有500 nm厚的SiO2薄膜的Si(100)晶圆上制备了生长速度为1.0 nm/s，厚度为100 nm的Ti薄膜，并对薄膜的厚度、表面形貌、电阻、反射率及应力进行了测试。相比于电子束蒸发法，磁控溅射法制备的薄膜表面晶粒更加均匀致密，表面缺陷少，粗糙度较小，薄膜具有更低的电阻、应力以及更高的反射率。试验结果表明，磁控溅射法制备的薄膜电性能优于电子束蒸发法。电子束蒸发法制备的薄膜应力具有较大的变化范围，可用于多层膜之间的应力匹配调试。同时，也可以通过减少薄膜表面结构缺陷，减小薄膜表面粗糙度来提高薄膜的性能。     

射频磁控溅射法制备Ti掺杂ITO薄膜的厚度对膜结构与光电性能的影响

利用Ti掺杂ITO靶材,采用单靶磁控溅射法在玻璃基底上制备厚度为50~300 nm的ITO:Ti薄膜。借助X射线衍射(XRD)、原子力显微镜(AFM)、可见光分光光度计、霍尔测试系统和四探针电阻测量仪,研究薄膜厚度对薄膜的晶体结构、表面形貌和光电性能的影响。结果表明:ITO:Ti薄膜呈现(400)择优取向,随薄膜厚度增加,薄膜的结晶程度增强,晶粒度增大,薄膜更致密。随薄膜厚度增加,薄膜的均方根粗糙度和平均粗糙度以及电阻率都先减小再增加,薄膜厚度为250 nm时,表面粗糙度最小,蒋膜厚度为200 nm时,电阻率最低,为2.1×10-3?·cm。不同厚度的薄膜对可见光区的平均透过率都在89%以上。     

钛酸锶钡陶瓷的制备及介电性能

采用固相法和溶胶凝胶法制备钛酸锶钡(BaxSr1 xTiO3,BST)粉末,用X射线分析仪(XRD)和扫描电镜(SEM)分析2种方法制备的BST粉末的物相组成和显微形貌。固相法和溶胶凝胶法所得粉末制备的压坯分别在1 400℃和1 300℃烧结2 h得到BST陶瓷,用密度分析仪、扫描电镜(SEM)和阻抗分析仪对BST陶瓷的密度、断口显微形貌和介电性能进行分析,研究不同Ba/Sr比例和2种不同粉末颗粒尺寸对BST陶瓷介电性能的影响。结果表明:室温下,BaxSr1 xTiO3(x=0.5,0.6)为立方相,BaxSr1 xTiO3(x=0.7,0.8)为四方相;固相法粉末制备的BaxSr1 xTiO3(x=0.5,0.6,0.7,0.8)陶瓷的密度、颗粒尺寸和介电常数峰值均随Ba含量的增加而增加,居里温度随Ba含量的增加呈线性增加,线性拟合得到Tc=221.6+354x,BST陶瓷的介电常数随频率的增加而降低;与固相法粉末制备的BST陶瓷相比,溶胶凝胶法粉末制备的BaxSr1 xTiO3(x=0.5,0.6)陶瓷密度较高,但同时出现介电峰弥散,介电常数和介电损耗较低。     

磁控溅射Ti/WO_3薄膜的微结构及光学性能

采用直流反应磁控溅射技术在玻璃基片上制备不同氧分压的Ti掺杂的WO3薄膜。用X射线衍射(XRD)、分光光度计、台阶仪等对薄膜的结构、光学性质进行表征;分析不同的氧分压对气敏薄膜透光率和结构的影响。结果表明,氧分压增大,膜厚减小,薄膜的平均晶粒尺寸增大,晶面间距增大,光学带隙变小。并用包络线法和经验公式法计算出薄膜的光学常数,结果表明,折射率和消光系数随氧分压的增加而增大。     

Deposition and Characterization of (Ba, Sr)RuO3 Oxide Electrode Using TMHD-Based Single Cocktail Source

(Ba, Sr)RuO3 has been paid an attention as a promising electrode for (Ba, Sr)TiO3 dielectric material due to its similarity in structure and chemical composition with BST. In this study, (Ba, Sr)RuO3 conductive oxide film was deposited on a 4 inch p-type Si wafer by metal organic chemical vapor deposition (MOCVD) using single cocktail source for the practical device application. Ba(TMHD)2, Sr(TMHD)2, Ru(TMHD)3 precursors and solvent [1-EtylePiPerdine (C7H15 N) ] as starting materials were mixed together for single cocktail source. A liquid delivery system (LDS) and a vaporization cell were utilized for the delivery and vaporization of single cocktail source, respectively. The source feeding rate was controlled by a liquid mass flow controller (LMFC). Deposition parameters, such as the oxygen flow and the source flow rate,were sensitive to phase formation, resistivity and the composition ratio of (Ba, Sr)RuO3 films. Highly (110)-textured (Ba,Sr)RuO3 film was obtained vhen the Ar/O2 ratio was 200/140 sccm at a source flow rate of 0.05 sccm. The process window of stoichiometric composition of BSR film was observed with varying the source flow rate from 0.05 sccm to 0.1 sccm.     

Effect of Ti cap layer thickness on microstructures and magnetic properties of Ti/Ni/Ti films

Nanogranular Ti(3 nm)/Ni(30 nm)/Ti(t nm )(t=1,3,5,7,10) films were prepared by facing magnetron sputtering from Ti and Ni onto glass substrates at room temperature.The structural and magnetic properties of films strongly depended on the Ti layer thickness.X-ray diffraction(XRD) patterns of all as-deposited films showed strong FCC Ni(111) peak.Vibrating sample magnetometer(VSM) measurements indicated that the perpendicular coercivity of the Ti(3 nm)/Ni(30 nm)/Ti(3 nm) film reached about 36 kA/m.With the increase of Co layer thickness,coercivity(Hc) first increased and then decreased.The grain size and magnetic clusters slightly increased and the value of roughness(Ra) was smallest at t=3 nm.     

Effect of annealing process on structures and ferroelectric properties of Ca0.4Sr0.6Bi3.95Nd0.05Ti4O15 thin films

Ca0.4Sr0.6Bi3.95Nd0.05Ti4O15 (C0.4S0.6BNT) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. Ef-fect of annealing process (time and temperature) on structures and ferroelectric properties of C0.4S0.6BNT thin film was investigated. The relative intensity of (200) peak increased first then decreased with annealing temperature and became predominant at 800℃. In contrast, no evident change could be observed in the (001) peak. The remnant polarization (Pr) and coercive field (Ec) for C0.4S0.6BNT film annealed at 800℃ for 5 rain were 21.6 μC/cm2 and 68.3 kV/cm, respectively.     

单相Sm掺杂BaTiO3陶瓷的结构研究

采用高温固相反应法,在1 400℃/12h烧结条件下制备了具有Ti空位补偿的Ba1-xSmxTi1-x/4O3(BST;x=0.02~0.07)陶瓷。利用XRD对BST陶瓷的晶体结构进行表征,并在532和638nm两种激发波长下对其进行拉曼光谱测试。结果表明:当x≤0.07时,所有的BST陶瓷均表现为单相钙钛矿结构,并且随着Sm含量的增加,其晶体结构由四方相(x≤0.06)转变为立方相(x=0.07);不同激发波长下的拉曼测试证实高频谱来自稀土Sm^3+的荧光效应。     

Synthesis of nanocomposite thin films based on the Mo-Si-C ternary system and compositional tailoring through controlled ion bombardment

A major advantage of sputtering processes compared to evaporation processes is the possibility of synthesizing films that replicate the composition of the source (target) material,particularly in the case of alloy targets. This is related to the unique feature of sputtering, viz, formation of an “altered layer” which facilitates reproduction of the target composition in the thin film. An exciting and novel area of research deals with the synthesis of nanocomposite thin films by sputtering composite targets. In this article, the feasibility of depositing a composite thin film based on the Mo-Si-C temary system through RF magnetron sputtering of a MoSi₂+XSiC target, and the possibility of modifying the film composition by controlled ion bombardment (i.e., “ion plating” or “bias sputtering”), will be discussed. In this context, the role of the sputter yields for Mo, Si, and C will be examined with respect to the ability to vary the composition of as-deposited films. In addition, the modifications which were required to sputter a 58.4-mm-diameter composite target (produced inhouse, by different synthesis reactions) using a 127×381-mm Vac Tec cathode will be discussed. Details of Auger electron spectroscopy (AES) scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses of the as-deposited films will be presented.     

Analysis of europium doped luminescent barium thioaluminate

Europium-doped barium thioaluminate sputtering target was synthesized by powder sintering method and thin film was deposited by radio frequency(RF) sputtering.X-ray diffractometer(XRD) pattern indicated that the main compound of the target was BaAl4S7.Oxygen was the main impurity which led to the formation of BaAl2O4.It was shown that both BaAl4S7 and BaAl2S4 were contained in the as-grown thin films and a 471.7 nm emission peak in the PL spectra appeared due to a combination of BaAl4S7:Eu2+ and BaAl2S4:Eu2+.In addition,the product of oxidation in the film was BaSO4 instead of BaAl2O4 and led to an emission peak at 415.2 nm in the PL spectra assigned to the f→f transition of Eu2+ in the BaSO4 host.     

磁控溅射涂层的耐蚀性

通过采用磁控溅射工艺,将两种铁基和镍基材质的靶材溅射到基材(1Cr18Ni9Ti)上,形成4种薄膜。对靶材、基材和薄膜等分别在不同浓度硫酸中的耐腐蚀性进行了测量,并对薄膜在0.05mol/L硫酸中的耐点蚀性进行了研究。通过对Tafel曲线、循环极化曲线及显微组织的分析,结果表明:溅射后薄膜组织为微晶,薄膜的耐蚀性普遍比溅射材前靶的耐蚀性要好;薄膜耐点蚀性很好。