ZnS／ZnSe迭层光栅滤波器的光调制特性

本文报导利用真空镀膜技术在ＢＫ７玻璃波导上,制备成ＺｎＳ／ＺｎＳｅ迭层光栅滤波器,在室温下,用Ａｒ＾＝脉冲激光,通过棱镜与波导耦合,实现了光栅滤波器的光控开关调制。     

分层优化电致发光器件加速层的研究

在本文的工作，对于加速层我们研究了ＳｉＯ２和ＺｎＳ两种材料的加速八月主采用这两种材料作为加速层的器件的传导电荷情况。实验结果表明ＺｎＳ作加速层的电荷注入能力优于ＳｉＯ２作加速层；但是后者对热电子的加速作用明显优于前者，而且在同等条件下，以ＳＩＯ２作加层的器件亮度明显高天ＺｎＳ的作加速层的器件。     

ZnCdSe—ZnSe／CaF2多量子阱中的三阶非线性

我们首次利用Ｚ－扫描技术在室温下研究了ＺｎＣｄＳｅ－ＺｎＳｅ／ＣａＦ２多量子了进中的三阶非线性，得到非线性系数ｎ２为－４．４６×１０＾－８ｅｓｕ。其主要非线性机理归结为ＺｎＣｄＳｅ－ＺｎＳｅ／ＣａＦ２多量子阱中的带填充效应。     

光助MOCVD生长p—ZnSe及ZnSep—n结室温蓝色电致发光

用光助低压ＭＯＣＶＤ进行ＺｎＳｅ及ＺｎＳｅ：Ｎ外延层生长，由发光光谱表明，在光助下生长的本征ＺｎＳｅ外延膜具有高质量：ＺｎＳｅ：Ｎ外延层中与Ｎ有关的深中心发射得到有效抑止，其ｐ－ＺｎＳｅ受主载流子深度达３×１０＾１７ｃｍ＾－３。在制备ｎ－ＺｎＳｅ／ＺｎＣｄＳｅ－ＺｎＳｅＱＷ／ｐ－ＺｎＳｅ结构中，在室温下观测到该二极管电脉冲下的蓝色电致发光（ＥＬ）。     

应变层异质结ZnS／ZnSe的价带带阶

采用基于ＬＭＴＯ－ＡＳＡ的平均结合能计算方法，研究了在ＺｎＳｘＳｅ１－ｘ衬底上沿（００１）方向外延生长的应变层异质结ＺｎＳ／ＺｎＳｅ的价带带阶值。研究表明，应变的结果使价带带阶随衬底组分（ｘ）的变化呈非线性且单调的关系；与其他理论计算和实验结果比较，本文的计算结果比较理想。     

静压下（CdSe）_m／（ZnSe）_n－ZnSe超短周期超晶格量子阱的共振喇曼散射研究

在静压和液氮温度下观察到（ＣｄＳｅ）ｍ／（ＺｎＳｅ）ｎ短周期超晶格中重空穴激子的复合发光和多达４阶的类ＺｎＳｅＬＯ多声子喇曼散射，并观察到厚ＺｎＳｅ势垒层的带边发光和限制在厚势垒层中的类ＺｎＳｅＬＯ声子散射．结果表明，加压后（ＣｄＳｅ）ｍ／（ＺｎＳｅ）ｎ短周期超晶格中的类ＺｎＳｅ的１ＬＯ和２ＬＯ声子模频率分别以３．７６和７．１１ｃｍ－１／ＧＰａ的速率向高频方向移动，超晶格阱层光致发光峰的压力系数为５９．８ｍｅＶ／ＧＰａ．与（ＣｄＳｅ）ｍ／（ＺｎＳｅ）ｎ短周期超晶格共振时的类ＺｎＳｅ１ＬＯ声子模频率比与ＺｎＳｅ势垒层共振时的类ＺｎＳｅ１ＬＯ声子模频率低２．０ｃｍ－１，反映了（ＣｄＳｅ）ｍ／（ＺｎＳｅ）ｎ短周期超晶格中ＬＯ声子的限制效应     

ZnSe/ZnCdSe多量子阱激子光学非线性

本文采用泵浦－探测技术研究了ＺｎＳｅ／ＺｎＣｄＳｅ多量子阱室温激子饱和吸收，并根据Ｋ－Ｋ关系计算得到５２１．６ｎｍ至５４４ｎｍ的光学非线性折射率的变化．观测到由折射率变化引起的ＺｎＳｅ／ＣｄＺｎＳｅ多量子阱光双稳器件的室温激子光双稳．根据ＺｎＳｅ／ＺｎＣｄＳｅ多量子阱的激子吸收谱及激子的非线性理论，归结其主要非线性机制为激子态的相空间填充和激子带展宽．     

静压下（CdSe）m／（ZnSe）n—ZnSe超短周期超晶格量子阱的共振…

在静压和液氮温度下观察到（ＣｄＳｅ）ｍ／（ＺｎＳｅ）ｎ短周期超晶格中重空穴激子的复合发光和多达４阶的类ＺｎＳｅＬＯ多声子喇曼散射，并观察到厚ＺｎＳｅ势垒层的带边发光和限制在厚势垒层中的类ＺｎＳｅＬＯ声子散射。结果表明，加压后（ＣｄＳｅ）ｍ／（ＺｎＳｅ）ｎ短周期超晶格中的类ＺｎＳｅ的１ＬＯ和２ＬＯ声子模频率分别以３．７６和７．１１ｃｍ＾－１／ＧＰａ的速率向高频方向移动，超晶格阱层光致发光峰的压力系数     

温度引起的ZnSe/Zn_(0.84)Mn_(0.16)Se超晶格中势阱层和势垒层的反转

测量了ＺｎＳｅ,Ｚｎ０．８４Ｍｎ０．１６Ｓｅ合金和ＺｎＳｅ／Ｚｎ０．８４Ｍｎ０．１６Ｓｅ超晶格的１０～３００Ｋ的变温光致发光谱．发现ＺｎＳｅ的带隙在１０Ｋ时比Ｚｎ０．８４Ｍｎ０．１６Ｓｅ合金的带隙小,而在３００Ｋ时比合金的带隙大．预计ＺｎＳｅ／Ｚｎ０．８４Ｍｎ０．１６Ｓｅ超晶格中在１３０Ｋ附近会发生势阱层和势垒层的反转．在ＺｎＳｅ／Ｚｎ０．８４Ｍｎ０．１６Ｓｅ超晶格中观测到了这种反转但发生在８０Ｋ附近．超晶格中Ｚｎ０．８４Ｍｎ０．１６Ｓｅ层的应变可能是反转温度变低的原因．     

应变层超晶格Zn_(1-x)Cd_xSe/ZnSe和ZnSe/ZnS_xSe_(1-x)光致发光谱

本文报道了分子束外延生长的应变层超晶格Ｚｎ０．７７Ｃｄ０．２３Ｓｅ／ＺｎＳｅ和ＺｎＳｅ／ＺｎＳ０．１２Ｓｅ０．８８的光致发光谱．分析了影响激子线型展宽的主要因素．定量表征了４．４Ｋ下合金涨落和阱厚涨落对线型展宽的贡献．理论分析表明，在低温（４．４Ｋ）下，合金涨落和阱宽涨落对线型展宽起主导作用．对比结果显示，Ｚｎ０．７７Ｃｄ０．２３Ｓｅ／ＺｎＳｅ超晶格的合金涨落和阱宽涨落对线型展宽的贡献大于ＺｎＳｅ／ＺｎＳ０．１２Ｓｅ０．８８超晶格     

双光子光学多稳态的研究

将双光子光学双稳态理论推广到包含全部交流斯塔克项,首次表明存在双光子作用的光学双双稳态以及两种不同类型的双光子光学三稳态。     

Effect of oblique incidence on bistability of nonlinear microcavity

Based on the nonlinear medium transfer theory, optical bistability of nonlinear microcavity is investigated at oblique incidence. It is found that the critical frequency of incident light inducing bistability phenomenon is related to the polarization and incident angle. The critical frequency increases with the incident angle. Increasing the incident angle can make bistability happen easier for focusing Kerr medium, but will hinder bistability for defocusing Kerr medium. The bistability switch threshold of TE mode is significantly lower than that of TM mode at a large incident angle.     

Ag—TCNQ薄膜的光学双稳态现象

本文第一次报导了Ａｇ－ＴＣＮＱ薄膜的双稳态现象。双稳Ｆ－Ｐ腔是由Ａｇ－ＡｇＴＣＮＱ－Ａｇ膜系组成。并观察了Ａｇ－ＴＣＮＱ薄膜典型的双稳回线。     

Observation of bistability in GaAs quantum-well vertical-cavitysurface-emitting lasers

Two different types of bistability in proton-implanted GaAs quantum-well (QW) vertical-cavity surface-emitting lasers (VCSELs) have been observed. The first type of bistability has a small hysteresis width (~50 μA) in the light versus current and voltage versus current characteristics. Light-induced large negative differential resistance, random fluctuations, and self-pulsations are observed at the switching point. The emission patterns show that the bistability occurs at a spatially localized area under the output facet that covers only a small fraction of the N1S-μm-diameter aperture. The bistability stems from spatially localized saturable absorption. The second type of bistability has a large hysteresis width (~1 μA) in the L-1 characteristics and is observed well above the threshold current. In this case, no observable bistable loop exists in the voltage versus current characteristics, and the bistability is associated with transverse mode-hopping     

Dynamic properties of transverse-magnetic wave injectedsemiconductor lasers

Dynamic responses of optical polarization bistability and self-sustained pulsation in transverse-magnetic (TM) wave injected semiconductor lasers are analyzed. Due to the TM wave injection, laser amplification of TM wave and laser oscillation in the transverse-electric (TE) mode simultaneously occurs in the laser. The calculated dynamic responses of optical polarization bistability are compared with measured responses. The upper limit of the switching time and the repetition frequency are clarified from calculations. The self-sustained pulsation triggered by a change of TM input power is found in the course of the calculation. The conditions needed for the pulsation are discussed     

Saturable interferometer theory of optical bistability

The phenomenon of purely absorptive bistability is examined using a self-consistent multibeam interference method. A state equation is derived and shown to be identical to that derived from mean-field theory (MFT) in the limit of small absorption length products and high saturation. Using the theory given, we are able to examine the time evolution of the system analytically. The results show a critical slowing behavior near the bistable points of the system and are used to examine switching times. In addition, we give a different condition for bistability which results in a larger range of admissibleCvalues.     

Multiple bistability in an optical-fiber double-ring resonatorutilizing the Kerr effect

We present a theoretical study of multiple bistability in an optical-fiber double-ring resonator. The multiple bistability is caused by the optical Kerr effect, which modulates the refractive index of the fiber. The dependence of the multiple bistability on various parameters of the fibers and the couplers is investigated     

CaF_2透明衬底中生长CdS VPE单晶膜的光学双稳态(英文)

Optical bistability (OB) in semiconductors is of increasing interest in both basic and applied research. Much is known about optical nonlineari-ties and OB in CdS crystals. This paper reports, for the first time, about the optical bistability in CdS single crystal film grown on a CaF2 transparent substrate. High quality of the film has been identified by photolumines- cence and absorption. The OB is measured by 514.5nm line of Ar+ laser modulated into 6ms square light pules at room temperature. Two spikes appear at the front and back edges of transmitted light pulses. The switchins time is about 200μs at 200mW power level, smaller than the time in CdS bulk crystal at the same condition. The mechanism of the OB is due to the increasing absorption and thermal red shift of the absorption edge.     

Pitchfork bifurcation polarisation bistability in vertical-cavitysurface-emitting lasers

Pitchfork bifurcation polarisation bistability has been observed experimentally in a vertical-cavity surface-emitting laser for the first time. All-optical flipflop operation has been successfully demonstrated by injecting the trigger light inputs having the two orthogonal polarisations     

Role of light fluctuations in the appearance of the bistability of the photocarrier distribution

The effect of light fluctuations on the light-induced bistability of the photocarrier distribution is studied. The bistability can be explained by the threshold character of interband transitions and narrowing of the band gap of the semiconductor with increasing photocarrier density. The stationary probability density of the states and the mathematical expectation of the transition time between states are calculated. It is shown that external noise induces a strongly absorbing state of the semiconductor below the critical intensity of the incident radiation and suppresses stationary states above this value. Fiz. Tekh. Poluprovodn. 32, 296–298 (March 1998)