Composition Optimization and Phase Transformation of Si-Nanocrystal-Doped $hbox{SiO}_{x}$ for Enhancing Luminescence From MOSLED

Near-infrared (NIR) photo- and electroluminescence (PL and EL) of Si nanocrystals buried in Si-rich SiO_x, film, and their correlation with the structural phase transformation and the varied oxygen composition of SiO_x, are investigated. By detuning the N₂O flowing ratio (Y_{N 2 O} = [N₂O/(N₂O + SiH₄)] times 100%) from 93% to 80% during plasma-enhanced chemical vapor deposition growth, the oxygen composition ratio of the Si-rich SiO_x, can be adjusted from 1.64 to 0.88. The grazing incident X-ray diffraction and X-ray photoelectron spectroscopy spectra indicate that the SiO_x, transforms its structural phase from Si + SiO₂ isomer to Si + SiO + SiO₂ isomer. With O/Si ratio >1.24, the SiO_x, matrix becomes SiO₂ isomer, whereas the SiO_x, structure approaches SiO phase at O/Si ratio that is nearly 1.0. The formation of SiO matrix in SiO_x, grown at Y_{N 2 O} below 85% reduces the precipitated Si nanocrystal density from 2.8 times 10¹⁸ to 7 times 10¹⁶ cm^-3, and monotonically attenuates the NIR PL by one order of magnitude. Such a structural phase transformation from SiO₂ to SiO in SiO_x with lower O/Si ratio causes the degradation in EL power conversion efficiency and external quantum efficiency (EQE). Maximum EL power of 0.5 muW and EQE of 0.06% are obtained from MOSLED made on SiO_x, with optimized O/Si ratio of 1.24.     

1.047-μm Yb:Sr5(PO4)3F energystorage optical amplifier

The pumping and gain properties of Yb³⁺-doped Sr₅ (PO₄)₃F (Yb:S-FAP) are reported. Using a tunable, free running 900-nm Cr:LiSAF oscillator as a pump source for a Yb:S-FAP rod, the saturation fluence for pumping was measured to be 2.2 J/cm² based on either the spatial, temporal, or energy transmission properties of the Yb:S-FAP rod. The emission peak of Yb:S-FAP (1047.5 nm in air) is shown to overlap with that of Nd:YLiF₄ (Nd:YLF) to within 0.1 nm, rendering Yb:S-FAP suitable as an effective power amplifier for Nd:YLF oscillators. The small signal gain, under varying pumping conditions, was measured with a cw Nd:YLF probe laser. These measurements implied emission cross sections of 6.0×10^-20 and 1.5×10^-20 cm ² for π and σ polarized light. Respectively, which fall within the error limits of the previously reported values of 7.3×10^-20 and 1.4×10^-20 cm² for π and σ polarized light, obtained from purely spectroscopic techniques. The effects of radiation trapping on the emission lifetime have been quantified and have been shown to lead to emission lifetimes as long as 1.7 ms, for large optically dense crystals. This is substantially larger than the measured intrinsic lifetime of 1.10 ms. Yb:S-FAP crystal boules up to 25×25×175 mm in size, which were grown for the above experiments and were found to have acceptable loss characteristics (<~1%/cm) and adequately large laser damage thresholds at 1064 nm (~20 J/cm² at 3 ns). Overall, diode-pumped Yb:S-FAP amplifiers are anticipated to offer a viable means of amplifying 1.047-μm light, and may be particularly well suited to applications sensitive to overall laser efficiencies, such as inertial confinement fusion energy applications     

Area and volume effects on breakdown strength in liquid nitrogen

We measured dc and ac breakdown voltages in liquid nitrogen (LN ₂) with a sphere-to-plane electrode configuration. Experimental results revealed that the breakdown voltage in LN₂ did not increase monotonously but partially decreased as the sphere diameter increased at a constant gap length. Thus, the existence of the area and the volume effects on the breakdown voltage in LN₂ was verified quantitatively; the breakdown strength decreased when increasing the {SEA}₉₀ (90% stressed electrode area) and the {SLV}₉₀ (90% stressed liquid volume). By changing the experimental conditions, it was verified that both area and volume effects, having a mutual correlation, simultaneously lead to the degradation of the breakdown strength in LN₂. In order to examine the area and the volume effects for the larger {SEA}₉₀ and {SLV}₉₀, we also measured the breakdown voltage with a coaxial cylindrical electrode. It was concluded that the dc and ac breakdown strengths in LN₂ decreased as the {SEA}₉₀ and the {SLV}₉₀ increased varying widely from 10⁰ to 10⁵ mm² and from 10 ^-1 to 10⁵ mm³, respectively     

Electrical conduction in double-layer P-SiO2/polymerdielectric structures

The dc electrical conduction in MI₁M and MI₁I₂M composite specimens has been studied, where I₁ is polyimide (PI) or polyester (PET), and I₂ is a thin plasma deposited silicon compound film (oxide, P-SiO₂, or nitride, P-SiN). The current-electric field (j(E,T)) characteristics have been measured over a wide range of E values (O⩽E⩽2×10 ⁵ V cm^-1) and temperatures (20⩽T⩽170°C). The observed transport characteristics are in broad agreement with data reported in the literature, except for PI based MI₁I₂M specimens, for which polarity dependent transport behavior occurs for T>60°C and E>2×10³ V cm^-1. The observed behavior of all specimen types can be explained in terms of protonic hopping conduction; the charge carriers are created by thermal dissociation and ionization of carboxylic acid (-COOH) groups, present in PI as several percent of unimidized polyamic acid, and in PET at chain ends. When the polarity is +MI₁I₂M-, the relatively abundant free protons in PI flow to the I₁/I₂ interface, where they can accumulate and give rise to a space charge-induced potential barrier of ~0.2 eV. By modifying Lewis' molecular dipole model so as to include this potential barrier, we derive expressions for j(E,T) which describe the experimentally observed polarity dependence in PI rather well. The effect is not observed in PET based MI₁I₂M specimens on account of the much lower concentration of free protons in this polymer     

Dynamism of interconnected channels in water-treed polyethylene

Loss current through non-penetrated water treed polyethylene increases with exposure time at 1000 V, 500 Hz. The increment is discussed by taking the capacitance of the water treed sheet sample to be the Maxwell-Wagner type capacitor composed of two layers: the capacitance both for the non-treed region and the unfilled channel region is connected in series to the parallel combination of the capacitance and the conductance for the water-filled channel region. By assuming a non-ohmic dependence of the conductance, the fundamental and 3rd harmonic components of the loss current have been calculated numerically, based on the equivalent circuit. The numerical results give a good agreement with the observed changes of the magnitudes of fundamental and 3rd harmonic components I₁ and I₃, and their phase angles &thetas;₁ and &thetas;₃, respectively, for the exposure time. It has been concluded that the water-filled channel region in the water treed region grows with exposure time. It is also concluded that the conductivity of the water-filled channel region increases slightly with its growth     

Optimization of Broadband Gain Spectra of Cr $^{hbox{4}+}$:YAG Crystal Fiber Amplifier

In this paper, we present energy level, transition configuration, and numerical model of Cr³⁺/Cr⁴⁺:YAG crystal fiber amplifier for the first time, to the best of our knowledge. The rate and power propagation equations of the numerical model are solved and analyzed. The active ion concentration, length of the doped fiber, and pump power are optimized to maximize the bandwidth of the gain spectra. The effect of temperature on the gain spectra is also discussed. It is shown that based on analysis of the absorption spectra and emission spectra, Cr⁴⁺:YAG crystal is a three-level system, and the broadband gain of Cr ³⁺/Cr ⁴⁺ :YAG crystal fiber is attributed to the broad emission of Cr⁴⁺ ions, especially tetrahedral Cr ⁴⁺ in YAG. When excited at 800 nm, optimal fibers have ultrabroad gain spectra in the range of 1.2-1.65 mum, which cover the low-loss windows of the all-wave fiber without absorption peak caused by OH^- group.     

Electrical relaxation in iron-containing glasses

Glasses with composition 70 mol%(SiO₂, B₂O ₃, P₂O₅, TeO₂)-15 mol% Fe ₂O₃-15 mol%(BaO, CaO) were prepared by the conventional melt quenching technique. The electrical relaxation of these glasses has been studied in the frequency range 20 to 10⁵ Hz. The small polaron hopping between iron ions in a different valence state Fe²⁺ to Fe³⁺ is found to be the principal conduction mechanism. The ratio of Fe²⁺ ions to the total iron content, C=Fe²⁺/Fe_tot, is one of the factors determining the electrical conductivity. The glass former has a minor influence on dc conductivity, except of TeO₂ glass where conductivity is three order of magnitude higher than those of other glasses. The ac conductivity as a function frequency is divided into two domains, a dc plateau, followed by a power law in frequency. These two regions are well distinguished in the complex plot of electric modulus where all data points for different temperatures reside on the single plot. The results are discussed in the frame of the Hunt theory of dielectric relaxation in glasses containing mobile charge carriers     

InGaN-based blue laser diodes

The continuous-wave (CW) operation of InGaN multiquantum-well (MQW) structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 100 h. The threshold current and the voltage of the LDs were 50 mA and 5 V, respectively. The threshold current density was 8.8 kA/cm². The carrier lifetime and the threshold carrier density were estimated to be 3.5 ns and 1.8×10²⁰/cm³, respectively. The Stokes shift of the energy difference between the absorption and the emission energy of the InGaN MQW LD's were 140 meV. Both spontaneous and stimulated emission of the LD's originated from this deep localized energy state which is equivalent to a quantum dot-like state. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10^-17 cm², 9.3×10 ¹⁹ cm^-3, 5200 cm^-1, and 43 cm^-1 respectively     

Continuous-Wave (CW) operation of GaInP-AlGaInP visiblecompressively strained multiple quantum-wire (CS-WQWR) lasers

GaInP-AlGaInP compressively strained multiple quantum-wire layers were fabricated by the in situ strain induced lateral layer ordering process, during gas source molecular beam epitaxial (GS-MBE) growth. The effect of compositional modulation was described in terms of PL spectra, and TEM images for GaInP-AlGaInP MQWR lasers with 18 period (GaP)_1.5-(InP)_1.5 SPBS active layers. Based on transmission electron microscopy (TEM) images, the size of quantum-wire width was estimated, and the size fluctuation of quantum wires were discussed. Quantum-wire effect was discussed in terms of anisotropic lasing characteristics and EL polarization, which were reflected by an anisotropic oscillation strength in quantum wires and the comparison with GaInP-AlGaInP compressively strained quantum-film lasers was examined in terms of threshold current density. The condition under which quantum wires were formed by strained induced lateral layer ordering process was discussed in terms of anisotropic behaviors of lasing characteristics, such as threshold current density and lasing wavelength for GaInP-AlGaInP MQWR lasers with (GaP)_m/(InP) _mSPBS active layers. The lowest obtained J_th value was 278 A/cm² under the room temperature (r.t.) pulsed condition. The first CW operation of GaInP-AlGaInp quantum-wire laser was described. Threshold current was 294 A/cm² and CW operation up to 70°C was obtained     

Spectral analysis of the light emitted by streamers in hydrocarbonliquids

This paper presents the results of a spectroscopic study from 200 to 850 nm of the light emitted by streamers initiated in cyclohexane and n-pentane under step voltage in point-plane geometry. Experimental spectra of the light emitted by bush-like and filamentary streamers are composed of the H_α-Balmer line, the C₂ Swan band system and a background continuum. The diagnostic method we used for evaluating rotational and vibrational temperatures of excited C₂ in streamers was first tested on high-pressure corona discharges in nitrogen. For streamers in cyclohexane and n-pentane, it was impossible to determine the rotational temperature of C₂ and consequently the effective temperature of molecules in the streamer. Moreover, we found that vibrational populations of excited C₂ do not follow Boltzmann statistics. This indicates that excitation processes are due to chemical reactions. Electron densities deduced of the Stark broadening of H_α are in the range 4×10 ¹⁶ to 7×10¹⁶ cm^-3 for filamentary streamers and 2 to 6×10¹⁷ cm^-3 during the breakdown phase. For slow bush-like streamers, the electron density is not measurable     

Investigations on the VUV emissions of Ne-Xe-Cs gas mixturesexcited by an electrical discharge

UV emissions of Ne-Xe-Cs mixtures excited by a pulsed electrical discharge were investigated experimentally as a function of gas pressure and gas composition. For the studied discharge plasmas no fluorescence emissions originating to the radiative decay of the ionic excimer molecule (XeCs)⁺ at 160 nm were observed. Discharge excitation seems to be unsuitable for the generation of this ionic excimer. Previously reported fluorescence emissions due to the radiative transitions in the discharge-excited (XeCs)⁺ molecule could not be confirmed in our experimental conditions. An upper Limit for the unknown rate constant of the formation reaction Xe*+Cs⁺+Ne→Xe⁺Cs+Ne was given     

A Comparison of Very Fast to Very Slow Components in Degradation and Recovery Due to NBTI and Bulk Hole Trapping to Existing Physical Models

A new measuring technique with a 1mus measuring delay and a direct V_T determination has been employed. The response to stress times as short as 100 mus to 10⁵ has been studied as well as recovery over 12 decades in time. These experimental data allow a meaningful comparison to theory. Degradation data cut be precisely fitted to a simple physical model with 3 parameters thus enabling a reliable lifetime prediction from stress times below 10⁴s.     

Highly efficient diode-pumped 3-μm Er3+:BaY2F8 laser

A systematic investigation on a series of monoclinic Er³⁺ :BaY₂F₈ crystals with different dopant concentrations (C_Er=5%-30%) and crystal orientations was conducted to optimize the laser performance in this new 3-μm laser medium by laser diode pumping. The highest slope efficiency of 32% near the quantum defect (35%) was obtained with a 10% doped Er³⁺:BaY₂F₈ crystal with the orientation (010) and a length of 3.5 mm. A maximum output power of 160 mW was achieved at an absorbed pump power of 550 mW at a wavelength of 970 nm     

Interband and Intersubband Optical Properties of Doped n- $hbox{Zn}_{bf 0.46}hbox{Cd}_{bf 0.54}hbox{Se/Zn}_{bf 0.24}hbox{Cd}_{bf 0.25}hbox{Mg}_{bf 0.51}hbox{Se}$ Multiple Quantum Wells for Intersubband Device Applications

Two heavily doped n-type Zn_0.46Cd_0.54Se/Zn_0.24 Cd_0.25Mg_0.51Se multiple quantum well (MQW) structures have been grown on InP (0 0 1) substrates by molecular beam epitaxy. Photoluminescence (PL), time-resolved PL, and Fourier transform infrared (FTIR) spectroscopy were performed to characterize their interband and intersubband (ISB) properties. These two MQW samples have similar structures except for different well widths and a different number of periods. Excitation-intensity-dependent PL shows no electronic coupling between the multiquantum wells. The integrated PL intensities and the PL decay times of the MQWs were measured as functions of temperature in the range from 77 to 290 K. Theoretical fittings of temperature dependences of integrated PL intensities and PL decay times indicate that the nonradiative recombination processes observed in our samples can be well described by hole capture by acceptor-like defect centers through multiphonon emissions. ISB absorption spectra of the samples were measured by FTIR and show peak absorption at wavelengths of 3.99 and 5.35 mum for the MQWs with well widths of 28 and 42 A, respectively. Theoretical calculations based on the envelope function approximation confirm that these peaks are due to the transitions from the ground state E₁ to the first excited state E₂.     

车用金属氢化物-镍电池负极材料的性能

通过粉末烧结法制备不同前驱体LaNi5/LaMgNi4物质的量比(x)的车用金属氢化物-镍电池用La-Mg-Ni储氢合金,研究x对合金物相组成、显微组织和电化学性能的影响.储氢合金在x=0.75和0.95时,由(La,Mg)5Ni19和(La,Mg)2Ni7相组成;x=1.20时,为(La,Mg)5Ni19单相;x=1...     

Investigation of S2F10 production andmitigation in compressed SF6-insulated power systems

The Cooperative Research and Development Agreement (CRADA), established to study the production and mitigation of S₂F₁₀ (disulfur decafluoride), one of a number of toxic by-products formed in electric discharges in the insulating gas SF ₆, is described. The particular concern about S₂F ₁₀ is due to its highly toxic nature, the ceiling limit value being 10 parts per billion (ppb, or 1 part in 10⁸), and the need for development of sensitive detection techniques down to this level. In the presence of an electrical discharge such as an arc, spark, or corona, a portion of the SF₆ decomposes into lower fluorides of sulphur which can react to form a number of chemically active by-products including SOF₂ and SO₂F₂ . During the maintenance or repair of SF₆-insulated equipment, the handling of these gaseous is a matter of concern. Preliminary arc experiment results, reported health-related incidents caused by SF₆ by-products, and ongoing studies are discussed     

Miniature erbium:ytterbium fiber Fabry-Perot multiwavelength lasers

We demonstrate stable simultaneous lasing of up to 29 wavelengths in miniature 1- and 2-mm-long Er³⁺:Yb³⁺ fiber Fabry-Perot lasers. The wavelengths are separated by 0.8 (100 GHz) and 0.4 nm (50 GHz), respectively, corresponding to the free spectral range of the laser cavity. The number of lasing wavelengths and the power stability of the individual modes are greatly enhanced by cooling the laser in liquid nitrogen (77 K). The polarization modes and linewidth of each wavelength are measured with high resolution by heterodyning with a local oscillator. The homogeneous linewidth of the Er³⁺:Yb ³⁺ fiber at 77 K is determined to be ~0.5 nm, from spectral-hole-burning measurements, which accounts for the generation of a stable multiwavelength lasing comb with wavelength separations of 0.4 nm     

某1 000 MW超超临界燃煤机组尾部烟道硫酸铵盐沉积分析

超低排放技术可有效降低燃煤机组污染物排放,改善空气质量。为探究超低排放机组尾部烟道积灰、结垢问题的产生机理,以某1000MW超低排放机组引风机与二级低温省煤器的结垢灰样为研究对象,采用元素分析仪、X射线荧光光谱仪、X射线衍射仪和扫描电镜对灰样进行检测,详细分析并讨论了积灰样品中结晶矿物相的形成以及不同位置发生积灰的主要原因。结果表明：引风机与二级低温省煤器颗粒沉积位置的灰样主要由（NH₄）Al（SO₄）₂·12H₂O、（NH₄）₃H（SO₄）₂、CaSO₄、SiO₂等结晶矿物质构成;其中,（NH₄）Al（SO₄）₂覆盖于灰颗粒表面是造成引风机及二级低温省煤器严重结垢积灰的直接原因,而SCR脱硝系统较高浓度氨持续逃逸则是其根本原因。建议应根据煤种硫分、氨逃逸量、灰浓度等合理分配一、二级低温省煤器处的烟气温降,避免静电除尘器脱离低低温状态运行,防止二级低温省煤器处烟温降低幅度过大导致硫酸酸雾快速冷凝。     

Laser-Induced Line Patterning of Nonlinear Optical Crystals in Glass

This paper reports the progress in the patterning of nonlinear optical crystal lines on a glass surface by laser irradiation techniques. Two techniques for the patterning of crystal lines have been developed, i.e., rare-earth atom heat processing and transition metal atom heat processing, in which continuous-wave lasers such as Nd:YAG laser (wavelength: lambda = 1064 nm) are irradiated onto the glasses containing rare-earth ions such as Sm³⁺ and Dy³⁺ or transition metal ions such as Ni²⁺ and Cu²⁺. The patterning of lines consisting of nonlinear optical crystals such as beta-BaB₂O₄, SmxBi_1- xBO₃, (Sr,Ba)Nb₂O₆, and LiNbO₃ has been achieved. It is clarified from the azimuthal dependence of second harmonic intensities and polarized micro-Raman scattering spectra that nonlinear optical crystals in the lines are highly oriented along the laser scanning direction, i.e., the patterning of single-like crystal lines. It is also possible to pattern two-dimensional crystal bending or curved lines by just changing the laser scanning direction, and such bending crystal lines have a potential for optical waveguides.     

III–VI Chalcogenide Semiconductor Crystals for Broadband Tunable THz Sources and Sensors

The layered chalcogenide semiconductor GaSe has been grown under various crystal growth conditions for optimum performance for tunable terahertz (THz) wave generation and broadband THz detection. Low-temperature photoluminescence (PL), Raman spectroscopy, optical absorption/transmission, electrical charge transport property measurements, and THz time-domain spectroscopy (TDS) have been used to characterize the grown crystals. It is observed that indium doping enhances hardness of the grown GaSe crystals, which is very useful for processing and fabricating large-area devices. GaSe crystals have demonstrated promising characteristics with good optical quality (absorption coefficient les0.1 cm^-1 in the spectral range of 0.62-18 mum), high dark resistivity (ges10⁹ Omega cm), wide bandgap (2.01 eV at 300 K), good anisotropic (parand perp) electrical transport properties (mu_e/h, tau_e/h, and mutau_e/h) and long-term stability. The THz emission measurements have shown that the GaSe crystals are highly efficient for broadband tunable THz sources (up to 40 THz), and sensors (up to 100 THz). Additionally, new THz frequencies (0.1-3 THz) have been observed for the first time from an anisotropic binary and a ternary semiconductor crystal. Details of characterizations as well as optimum crystal growth conditions including simulation and computer modeling are described in this paper.