超薄Ti膜吸收率的尺寸效应

研究了超薄Ｔi膜吸收率和直流电导率与薄膜厚度的关系,结果表明,超薄Ｔi膜的吸收率具有尺寸效应,并具有极大值,其结构特征变化是导致吸收率尺寸效应的重要原因。     

Optical properties of SnO2:F films deposited by atmospheric pressure CVD

Atmospheric pressure chemical vapor deposition (APCVD) system, designed for the deposition of F-doped SnO₂ thin films, is compatible with industrial requirements such as high process speed, scaling to wide substrate widths and low costs. Precise method for measuring the optical absorptance in the spectral range 300–1700 nm combines transmittance, reflectance and photothermal deflection (PDS) spectra measured on the same spot of the sample immersed in the transparent liquid with a relatively high index of refraction. The effects of the film thickness, doping gas addition and the susceptor temperature on the optical absorptance and electrical resistivity of the TCO films are assessed. We show that the doping gas concentration and the susceptor temperature influence both the incorporation ratio of dopants into SnO₂ film as well as the defect concentration. The SnO₂ films growth at optimum APCVD conditions have thickness 0.7 µm, average surface roughness about 40 nm, sheet electrical resistance 10 Ω/sq and the optical absorption 1% at 500 nm and about 5% at 1000 nm.     

Dependence of the optoelectronic properties of Se-doped silicon on the thickness of dopant film

Se doped silicon is prepared by femtosecond-laser irradiation of Si coated with Si/Se bilayer films. The effects of Se film thickness on optical and electrical properties of Se doped silicon are studied. With the increase of the thickness of dopant film, the infrared absorptance increases significantly at wavelengths from 1100 to 2200 nm. At ?10 V bias, the responsivities at 1064 nm for samples prepared with Se film thicknesses of 50, 75, 100 and 125 nm are 0.310, 0.786, 0.911 and 1.22 A/W, respectively. This investigation demonstrates that the increase of doping concentration is beneficial to improve infrared absorption and photoresponse of Se doped silicon. This observation has potential to improve the property of Se doped silicon and facilitate its application in photoelectric devices.     

离子束溅射沉积Co膜光学特性的尺寸效应研究

本文采用离子束溅射沉积了不同厚度的Co膜,利用Lambda-900分光光度计,对不同厚度的Co膜从波长为310nm到1300nm范围测量了薄膜的反射率和透射率.选定波长为310、350、400、430、550、632、800、1200nm时对薄膜的反射率、透射率和吸收率随薄膜厚度变化的关系进行讨论.实验结果显示,Co膜的光学特性都有明显的尺寸效应.对在可见光范围内同一波长时的反射率和透射率随薄膜厚度变化关系的实验结果作于同一图上,发现反射率曲线与透射率曲线都有一个处在网状膜阶段的交点,这个交点对应的厚度作为特征厚度,该厚度可认为是金属薄膜生长从不连续膜进入连续膜的特征判据.     

Effect of the thickness of Si film on Si/Se film doped silicon prepared by femtosecond laser

The high infrared absorption of silicon could be achieved by doping silicon with chalcogens via femtosecond laser. In the paper, the samples of Se-doped silicon with different thickness of Si film were prepared with the aid of femtosecond laser. The effect of the thickness of silicon film on optical and the electrical properties of se-doped silicon is investigated. All the samples were thermally annealed at 500 °C for 1 h, and the absorptance of all the samples was found with a certain degree of reduction. With the increase of thickness of silicon film, the results of visible-near infrared spectrum showed that the infrared absorptance increased first and then decreased. In particular, the optical absorption, sheet carrier density and responsivity for samples prepared with the silicon film that was 300 nm thick were greater than that of the samples prepared with the Si films of other thickness. The experiment demonstrated that it is significant to select the silicon film of appropriate thickness in the fabrication of Se doped silicon.     

A Superconducting Resonator with a Hafnium Microbridge at Temperatures of 50–350 mK

A high-quality superconducting resonator with a microbridge of hafnium film for use in a circuit for readout a terahertz-band imaging array with frequency division multiplexing is demonstrated experimentally. The variability of the impedance of the bridge at a frequency of 1.5 GHz, which is a key factor in the control of the quality of the resonator, is studied. The bridge, having a thickness of about 50 nm, a critical temperature T_C ≈ 380 mK, and a plan size of 2.5 × 2.5 μm, was connected as a load of a resonator made of niobium film with a thickness of about 100 nm (T_C ~ 9 K). It is shown that the bridge smoothly changes its impedance proportionally to the bias power in the entire temperature range. The effective thermal insulation of the bridge was measured in a dilution cryostat at temperatures of 50–300 mK. Thermal conductivity G of the bridge was calculated and found to be ~4 × 10^–13 W/K, which gives an estimate of the sensitivity of the structure in the bolometric mode NEP ≈ 8 × 10^–19 W/Hz^1/2 at a temperature of 150 mK.     

Quality enhancement of AZO thin films at various thicknesses by introducing ITO buffer layer

Due to the simultaneously superior optical transmittance and low electrical resistivity, transparent conductive electrodes play a significant role in semiconductor electronics. To enhance the electrical properties of these films, one approach is thickness increment which degrades the optical properties. However, a preferred way to optimize both electrical and optical properties of these layers is to introduce a buffer layer. In this work, the effects of buffer layer and film thickness on the structural, electrical, optical and morphological properties of AZO thin films are investigated. Al-doped zinc oxide (AZO) is prepared at various thicknesses of 100 to 300 nm on the bare and 100 nm-thick indium tin oxide (ITO) coated glass substrates by radio frequency sputtering. Results demonstrate that by introducing ITO as a buffer layer, the average values of sheet resistance and strain within the film are decreased (about 76 and 3.3 times lower than films deposited on bare glasses), respectively. Furthermore, the average transmittance of ITO/AZO bilayer is improved nearly 10% regarding single AZO thin film. This indicates that bilayer thin films show better physical properties rather than conventional monolayer thin films. As the AZO film thickness increases, the interplanar spacing, d₍₀₀₂₎, strain within the film and compressive stress of the film in the hexagonal lattice, decreases indicating the higher yield of AZO crystal. Moreover, with the growth in film thickness, carrier concentration and optical band gap (E_g) of AZO film are increased from 4.62?×?10¹⁹ to 8.21?×?10¹⁹ cm^?3 and from 3.55 to 3.62 eV, respectively due to the Burstein-Moss (BM) effect. The refractive index of AZO thin film is obtained in the range of 2.24–2.26. With the presence of ITO buffer layer, the AZO thin film exhibits a resistivity as low as 6?×?10^?4 Ω cm, a sheet resistance of 15 Ω/sq and a high figure of merit (FOM) of 1.19?×?10⁴ (Ω cm)^?1 at a film thickness of 300 nm. As a result, the quality of AZO thin films deposited on ITO buffer layer is found to be superior regarding those grown on a bare glass substrate. This study has been performed over these two substrates because of their significant usage in the organic light emitting diodes and photovoltaic applications as an enhanced carrier injecting electrodes.     

Surface structure and biomedical properties of chemically polished and electropolished NiTi shape memory alloys

The surface structure and biomedical properties of NiTi shape memory alloy (SMA) samples after undergoing electropolishing and chemical polishing are determined and compared employing scanning electron microscopy, X-ray photoelectron spectroscopy, inductively-coupled plasma mass spectrometry, hemolysis analysis, blood platelet adhesion test, and MTT test. The results indicate that after chemical polishing, there is still a high Ni concentration on the surface of the NiTi SMA. On the other hand, electropolishing can form a thin surface titanium oxide film (about 10 nm thickness) with depleted Ni. In addition to the TiO₂ phase, some titanium suboxides (TiO and Ti₂O₃) are found in the surface film. Compared to chemical polishing, electropolishing can more effectively mitigate out-diffusion of Ni ions and the wettability, blood compatibility, and thromboresistance are also better. However, no difference on the cytocompatibility can be observed from samples that have been chemically polished or electropolished.     

Optical properties of black silicon prepared by wet etching

In this paper, the optical properties of black silicon have been studied. The black silicon samples were fabricated by alkaline etching and metal assisted etching. The micro-columns and nanopores on the silicon surface were obtained in KOH and Au-induced HF/H₂O₂ solution, respectively. The height and diameter of micro-columns prepared by KOH etching is about 470?nm and 2?μm. In the Au-induced HF/H₂O₂ etching, the metallic nuclei behave as a cathode and their surrounding area acts as an anode, resulting in nanopores with diameters ranging from 80 to 120?nm. These microstructures formed in the etching process directly affect the optical properties of black silicon such as reflectance, transmittance and absorptance. According to the measurement of integrating sphere detector, the absorptance of the black silicon produced by wet etching remains roughly 90% from 250 to 1,000?nm wavelength, which is almost 150% of the absorptance of conventional silicon. However, the reflectance of black silicon is less than 13% and the transmittance is less than 4%.     

Structural and optical properties of Ag2SeTe nano thin films prepared by thermal evaporation

Semiconducting Ag₂SeTe thin films were prepared with different thicknesses onto glass substrates at room temperature using thermal evaporation technique. The structural properties were determined as a function of thickness by XRD exhibiting no preferential orientation along any plane, however the films are found to have peaks corresponding to mixed phase. The XRD studies were used to calculate the crystallite size and microstrain of the Ag₂SeTe films. The calculated microstructure parameters reveal that the crystallite size increases and micro strain decreases with increasing film thickness. The refractive index, dielectric constants and thereby the optical bandgap of the films were calculated from transmittance spectral data recorded in the range 400?C1200 nm by UV?CVIS-Spectrometer. The direct optical bandgap of the Ag₂SeTe thin films deposited on glass substrates with different thicknesses 50?C230 nm were found to be in the range 1.48?C1.59 eV. The carrier density value is estimated to be around 9.8 × 10²¹ cm^?1 for the film thickness of 150 nm. The compositions estimated from the optical band gap studies reveal a value of 0.75 for Tellurium concentration. These structural and optical parameters are found to be very sensitive to the thin film thickness.     

Surface morphology and optical properties of magnetron - sputtered ultrathin Al films

Ultrathin Al films with different thicknesses were deposited on glass substrates by DC magnetron sputtering. The effects of film thickness on morphology and optical properties of the films were investigated in detail. When film thickness increases from 7.0 to 84.0 nm, the average grain size and surface roughness enlarges from 27.6 to 94.2 nm and from 0.25 to 1.87 nm, respectively. Below critical thickness of 28.0 nm, which is the thickness that Al films form continuous film, the optical properties vary significantly with thickness increasing and then tend to be stable. In the absorptance spectra, all films exhibit distinct broad peaks which can be attributed to the absorption due to the interband transition. The possible reasons for the shift in the peak position are due to the quantum size effects and internal stress in the ultrathin Al films.     

Electrochemical deposition of polypyrrole nanolayers on discontinuous ultrathin gold films

Ultrathin layers of polypyrrole (PPy) were electrochemically grown between microelectrodes on a Si/SiO(2) substrate. Conducting nanolayers of PPy are directly grown onto ultrathin discontinuous gold (Au) film between the microelectrodes, with thicknesses in the range 10-100?nm. The system therefore forms a novel (PPy/Au) nanocomposite conductor. Atomic force microscopy (AFM) imaging and conductivity measurements indicate that at all thicknesses a relatively uniform film is formed but with significant roughness that reflects the roughness of the metallic island layer. In PPy/Au films with thickness ～10?nm, the small barriers around the gold islands dominate the conduction, and as the film thickness increases to 100?nm the intrinsic conductivity of highly doped PPy dominates the charge transport.     

Titanium monoxide ultra-thin coatings evaporated onto polycrystalline copper films

We evaporated polycrystalline copper thin films of thickness between 10 and 100 nm on silicon substrates with their native oxide under ultra-high-vacuum conditions. Some of them were exposed to air for a period ranging from 1 day to 2 weeks. X-ray photoelectron spectroscopy (XPS) revealed a clean copper surface with a trace of oxygen. These films that were exposed to air presented oxides in the state Cu(II), the amount of CuO depended on the time that the film was exposed to air. Subsequently, we deposited TiO ultra-thin films on polycrystalline copper substrates. Both these thin films were formed by electron beam evaporation. XPS spectra showed that the surface of the titanium monoxide (TiO) films was contamination-free. An evaporation of 0.3 nm of TiO reduced the native oxide of the copper substrates from Cu(II) to Cu(I) or Cu(0) and transformed the TiO into TiO₂ at the interface. Low-energy ion spectroscopy showed that the complete coverage of the substrates depends on the thickness of the copper films. For 10 nm copper thin films the complete coverage occurred at 1.5 nm of TiO, and for 100 nm it occurred at 2.0 nm of TiO. In samples exposed to air, the complete coverage occurred at a film thickness slightly higher than those treated under ultra-high-vacuum conditions.     

Broadband optical absorption enhancement in Au-coated ZnO nanotips

The enhancement of broadband optical absorption in zinc oxide (ZnO) nanotip (NT) arrays coated with evaporated gold (Au) on fluorine-doped SnO2 (FTO)/glass by a simple hydrothermal growth and subsequent Au evaporation is reported. As the core of ZnO NT arrays is gradually coated with evaporated Au, the reflectance is slightly increased at lambda > approximately 800 nm while the transmittance is decreased at lambda approximately 400-1800 nm. For both FTO/glass and ZnO NT arrays on FTO/glass, the coating of Au improves the light absorption due to the antireflective geometry compared to the flat Au films and the absorptance is also enhanced by increasing the nominal thickness of Au with evaporation time. For the ZnO NT arrays with an Au evaporated for 600 s at 0.5 A/s, a high absorptance of >72% is achieved over the wavelength range of 250-2000 nm, indicating a significant increase due to the enhanced antireflection property as well as the increased surface area compared to the Au-coated FTO/glass without ZnO NT arrays.     

Dissipation in a Gold Nanomechanical Resonator at Low Temperatures

We present results from a study of the dissipation in nanomechanical gold resonators. We fabricated a nanomechanical resonator consisting of a gold wire of width 300 nm, thickness 80 nm and length 7.5 μm by etching away the underlying GaAs substrate. At low temperatures the resonator had a fundamental frequency of about 7.95 MHz, in part due to tension arising from differential thermal contraction between the gold beam and the underlying semiconductor substrate. The dissipation in the resonator was measured using the magnetomotive method over the temperature range 1 K to 10 mK. We find that the Q-factor of the resonator increases by more than a factor of four between 600 mK and 10 mK. The dissipation follows a weak power law dependence on temperature, ∝ T ^0.5, from approximately 30 mK to 600 mK.     

Growth of metal-oxide semiconductor nanocomposite thin films by a dual-laser, dual target deposition system

Nanocomposite formed by gold nanoparticles embedded in a titanium dioxide matrix thin films have been synthesized by a synchronized two laser system. An ArF? excimer (λ = 193 nm, τ_FWHM ∼ 12 ns) laser and a frequency tripled Nd:Yttrium Aluminium Garnet (YAG; λ = 355 nm, τ_FWHM ∼ 10 ns) laser were used for the irradiation of titanium dioxide and gold targets. The investigations showed that there exists the possibility for tailoring the optical properties of gold-titanium dioxide nanocomposites by the proper choice of the laser irradiation parameters. The band gap narrowing and additional absorption in the visible spectral region induced by the incorporation of gold in the host TiO₂ matrix allows for the design of nanostructured thin films for new generation of photocatalysts or solar energy converters.     

Titanium di-oxide films using a less hygroscopic colloidal precursor

We report the study of titanium dioxide films (TiO₂) using titanium di-isopropoxyl di-2ethyl hexanoate Ti(OC₃H₇)₂ (C₇H₁₅COO)₂ colloidal precursor. This compound is less hygroscopic in nature and easy to use with processes like spin or dip coating. Thin films of TiO₂ are made on silicon substrates and their structural and optical properties are studied. The effect of Ti content in the precursor, sintering temperature and its duration on film thickness and refractive index are investigated. Refractive index shows an increasing trend with the rise in the sintering temperature but remains unchanged with the time. The film thickness decreases with both sintering temperature and time and increases with Ti content in the precursor. Reflectivity measurements show marked reduction in the reflection losses compared to bare silicon surface wherein the film thickness is altered by spin speed. XRD results show anatase phase in the samples sintered at lower temperature (<680 °C), however, a mix of anatase, brookite and rutile phases is seen above this temperature. In the samples sintered above 1100 °C, rutile phase is dominant. These results are supported by the X-ray photoelectron spectroscopy. Atomic force microscopy reveals larger grain size at higher sintering temperature. The titanium dioxide films of desirable thickness and refractive index could be used as an antireflection coating on solar cells.     

Determination of the optical constants of As–Se–Ag chalcogenide thick films with high precision for optoelectronics applications

Thin films of (As₅₀Se₅₀)_100?xAg_x (with 0?≤?x?≤?25 s) metal-chalcogenide glasses were deposited onto glass substrates by thermal evaporation technique under high vacuum (10^?6 mbar). The optical constants as well as the average thickness of the studied films are determined by the Swanepoel envelope method which is based on the optical transmission spectra measured in the spectral range 300–2500 nm. This method enables the transformation of the optical-transmission spectrum of a thin film of wedge-shaped thickness into the spectrum of a uniform film, whose thickness is equal to the average thickness of the non-uniform layer. The dispersion of the refractive index is discussed in terms of the Wemple–DiDomenico single-oscillator model. The optical absorption edge is described using the non-direct transition model proposed by Tauc relation. Analysis of the optical data revealed that an addition of Ag in the range from 0 to 25 at.% to the (As₅₀Se₅₀)_100?x binary alloys affected the optical parameters of the investigated thin films. For instance, the optical band gap decreased from 1.661 to 1.441 eV with increasing the Ag content from 0 to 25 at.%. The results were discussed in terms of Mott and Davis model as well as chemical-bond approach.     

Synthesis,structure and photocatalytic properties of nanoparticles from a carbon-containing composite based on silicon oxide modified with titanium dioxide

A pulsed plasmochemical method was used to obtain carbon-containing nanocomposites based on silicon oxide modified with titanium dioxide. The material contained a Si_xC_yO_z carrier with an average size of 50–150?nm and a shell of fine particles with an average size of 5–10?nm. The phase composition and morphology of the synthesized composites was studied by X-ray diffraction and transmission electron microscopy. The optical and photocatalytic properties of the nanoparticles from the carbon-based composite based on silicon oxide encapsulated in titanium dioxide were studied. The synthesized composite showed a high photocatalytic activity due to the decomposition of methylene blue under the influence of visible light in the wavelength range of 460–630?nm.     

Indirect Determination of the Thermodynamic Temperature of a Gold Fixed-Point Cell

Since the value T ₉₀(Au) was fixed on the ITS-90, some determinations of the thermodynamic temperature of the gold point have been performed which form, with other renormalized results of previous measurements by radiation thermometry, the basis for the current best estimates of (T ? T ₉₀)_Au = 39.9 mK as elaborated by the CCT-WG4. Such a value, even if consistent with the behavior of T ? T ₉₀ differences at lower temperatures, is quite influenced by the low values of T _Au as determined with few radiometric measurements. At INRIM, an independent indirect determination of the thermodynamic temperature of gold was performed by means of a radiation thermometry approach. A fixed-point technique was used to realize approximated thermodynamic scales from the Zn point up to the Cu point. A Si-based standard radiation thermometer working at 900 nm and 950 nm was used. The low uncertainty presently associated to the thermodynamic temperature of fixed points and the accuracy of INRIM realizations, allowed scales with an uncertainty lower than 0.03 K in terms of the thermodynamic temperature to be realized. A fixed-point cell filled with gold, 99.999 % in purity, was measured, and its freezing temperature was determined by both interpolation and extrapolation. An average T _Au = 1337.395 K was found with a combined standard uncertainty of 23 mK. Such a value is 25 mK higher than the presently available value as derived by the CCT-WG4 value of (T ? T ₉₀)_Au = 39.9 mK.