晶体管混合π型参数与Y参数的关系

晶体管高频小信号等效电路模型可用两种方法得到:一是把晶体管视为一个二端口网络,列出电流、电压方程式,拟定满足方程的网络模型,常采用Y参数模型;二是根据晶体管内部发生的物理过程来拟定的模型,即π型参数模型;同一个晶体管应用在不同场合可用不同的等效电路表示,同一晶体管的各种等效电路之间又应该是互相等效的,各等效电路中的参数可互相转换。     

广义切比雪夫滤波器等效电路参数的提取

通过对等效电路的分析,对广义切比雪夫滤波器各归一化参数的物理意义做了明确的说明,并且,在指定传输零点位置和电路拓扑结构的情况下,采用优化方法,提出了一种灵活有效的提取广义切比雪夫滤波器等效电路参数的方法。最后,用MATLAB编程实现了等效电路参数的自动化提取。     

基于小信号等效电路模型的HBT本征稳定性研究

本文基于小信号等效电路模型,对异质结双极晶体管的本征稳定性进行了分析和讨论。稳定性因子（即K因子）用于评估器件的高频稳定特性。基于HBT的T型等效电路模型,推导了K因子的理论分析公式,并全面分析了小信号模型中物理参数对器件本征稳定性的影响,得到了提高器件本征稳定性的物理参数优化设计方法。测试计算了多个不同物理参数的HBT样品的稳定性因子K。物理参数对器件稳定性影响的实验结果与理论分析的影响规律一致。     

频率选择表面等效电路的计算与分析

提出一种利用全波数值计算和等效电路理论反演介质中频率选择表面(FSS)等效电路的方法。该方法物理过程直观,适用于任意形状FSS等效电路的精确求解。采用经典方环型FSS,验证该等效电路提取方法的可行性。最后采用该方法研究圆形缝隙型FSS结构尺寸、介质材料以及电磁波入射角对其等效电路参数的影响规律,为后续FSS等效电路研究及快速设计奠定理论基础。     

基于物理结构的GaN HEMTs小信号等效电路的精确建模方法研究

为了有效地表征GaN HEMTs在微波频段下的电学特性,研究了其高频等效电路的精确建模方法。基于GaN HEMTs器件的本征物理结构,综合考虑器件在制版过程中由电极和通孔所带来的寄生特性,描述了一种具有26个详细参数网络的小信号等效电路模型。此模型考虑了器件在工作环境下所受到的集肤效应,同时通过对小信号等效电路进行双端口网络参数分析,推导了其准静态近似的微波等效电路参数直接提取的简化算法,最终通过ADS仿真平台将所建模型和传统模型的S参数模拟结果与实测数据的一致性进行对比,验证了小信号等效电路模型的精确性与参数提取算法的有效性。     

3ctest静电发生器的等效电路建模

静电发生器的等效电路模型对相关静电抗扰度的仿真分析有直接影响。以国产的3ctest (EDS 16H)静电发生器为研究对象,提出一种基于静电发生器模块化的物理结构和阻抗参数测量结果,建立高精度电路模型的方法。介绍了静电发生器的典型物理结构,测量了各模块的阻抗特性,建立的等效电路考虑了接地电缆长短对阻抗参数的影响。根据标准2 Ω电流靶、50 Ω测试系统两种情况下测试的放电电流波形,拟合修正了等效电路参数,电路仿真结果与实测结果吻合较好。相关结果可以为实际的静电抗扰度测试提供参考。     

掩埋隧道结VCSEL芯片小信号等效电路模型

提出了适用于一种1.55μm掩埋隧道结垂直腔面发射激光器(VCSEL)芯片的小信号等效电路模型.等效电路的提出是基于半导体激光器速率方程以及VCSEL芯片结构,电路中各元件都有严格的物理意义.根据实验测得芯片的反射系数及传输参数,通过小信号等效电路仿真模拟,得到电路各元件参数值.不同偏置电流下,模拟结果与实验结果吻合都非常好,证明了该等效电路的有效性.     

可重构的低温共烧陶瓷电容高频等效电路模型

低温共烧陶瓷电容元件在微波多芯片组件设计中具有重要地位,其模型是系统仿真的关键.根据电容的物理结构特点,提出了一个可重构的高频电容模型,并给出其模型参数的计算公式.最后用ADS对双层电容和四层电容等效电路模型的S参数和用三维电磁场仿真软件的仿真结果做了对比,结果表明,其双层电容等效电路模型可以准确到4 GHz,其四层电容等效电路模型可以准确到2 GHz.采用等效电路的仿真时间比三维电磁场仿真软件约快60倍.     

掩埋隧道结VCSEL芯片小信号等效电路模型

提出了适用于一种1.55μm掩埋隧道结垂直腔面发射激光器(VCSEL)芯片的小信号等效电路模型.等效电路的提出是基于半导体激光器速率方程以及VCSEL芯片结构,电路中各元件都有严格的物理意义.根据实验测得芯片的反射系数及传输参数,通过小信号等效电路仿真模拟,得到电路各元件参数值.不同偏置电流下,模拟结果与实验结果吻合都非常好,证明了该等效电路的有效性.     

一种高速电流型CMOS数模转换器设计

利用 Z参数噪声网络等效电路的分析方法 ,得到了用器件 Z参数表示的微波双极晶体管噪声参数的表达式 ,通过对微波低噪声双极晶体管的高频参数进行测试和分析 ,并把器件的网络参数和物理参数相结合 ,来对器件的最小噪声系数进行计算和分析 .     

压电振子复参数等效电路模型研究

为得到压电振子精确的等效电路,将等效电路参数设为复数,即每一电路元件参数包含实部和虚部两部分,其中实部部分意义与传统参数意义相同,而虚部部分表示相应的机械、介电及压电损耗。为得到等效电路参数,给出了等效电路参数与压电材料参数之间相互关系。通过仿真和实验两种方法对复数模型与传统模型进行了性能比较,验证了复数等效电路模型的有效性和精确性。     

Very high-frequency small-signal equivalent circuit for shortgate-length InP HEMTs

A small-signal equivalent circuit for short gate-length InP high electron-mobility transistors (HEMTs) operating at very high frequency (HF) is proposed. First, the extrinsic parameters of the equivalent circuit are determined using a cold HEMT, but without forward gate bias. Then the intrinsic parameters of the equivalent circuit are extracted, including the frequency dependence of some of them. A fast and accurate method based on least-squares regressions is presented to obtain the extrinsic and intrinsic parameters from measured S-parameters. The improved equivalent circuit accurately fits the S-parameters of 0.25-μm InP HEMTs over the 500-MHz up to 40-GHz measurement bandwidth, for all gate-to-source and drain-to-source voltages     

应用模拟退火算法建立共面波导结构的等效电路

对中心导带和地渐变的共面波导结构提出了一种简单通用的方法,建立了其等效电路,通过模拟退火算法优化提取了电路参数.将这种方法应用于分析两种周期性共面波导结构,比较了由等效电路模型与实验得出的散射参数,得到了很好的一致性.     

一种销钉波导的分析方法

为了解决销钉波导端口阻抗参数计算复杂问题,采用一种新的分析方法,建立单销钉波导等效电路模型,利用级联规律,在分析三销钉波导时,把3个单销钉的等效电路级联起来进行分析,从电路角度解决销钉波导问题。把通过HFSS电磁仿真软件计算的销钉波导端口的阻抗参数与通过等效电路计算的销钉波导端口阻抗参数进行对比,两者结果一致。验证了该销钉波导等效电路的正确性以及这种销钉波导的分析方法的有效性。     

Theoretical Study of Millimeter Wave Harmonic Oscillator Stabilized with a Transmission Cavity

An equivalent circuit model of millimeter wave second harmonic oscillator stabilized with a transmission cavity has been proposed for constructing analytical formulations between performance parameters of the oscillator and parameters of the circuit. The model consists of an equivalent circuit of fundamental wave and that of second harmonic wave. Each of the circuits comprises circuit models of main cavity, transmission waveguide, and transmission cavity. Absorbing material placed between the transmission waveguide and the transmission cavity can suppress additional resonances originated from transmission cavity. The behavior of the second harmonic oscillator can be effectively described by the circuit model. Furthermore, based on this model, mechanical tuning characteristics have been studied at first, and then analytical formulas for quality factor and efficiency depending on circuit parameters have been derived. The circuit parameters can be conveniently extracted by electromagnetic field simulation. Hence the formulas exhibit both compact form and enough accuracy. Thereafter, general rules of performance parameters varying with circuit parameters have been deduced for the harmonic oscillators. Then some design considerations have been derived according to the corresponding analysis. The equivalent circuit model is useful for designing and adjusting millimeter wave second harmonic stabilizing oscillator with a transmission cavity.     

On the validity of a new extrinsic equivalent circuit including noise of HEMTs required for millimeter wave circuit design

In this paper, we propose a reliable extrinsic equivalent circuit of high electron mobility transistor (hemt) to determine both the S and noise parameters in the millimeter wave range from characterizations performed below 40 GHz. Only three extrinsic elements have to be determined instead of eight (at least) in the case of the conventional equivalent circuit. We show the validity of the proposed extrinsic equivalent circuit by S parameters and noise figure measurements up to W band (75-110 GHz).     

A complete small-signal equivalent circuit model of cooled butterfly-type 2.5 Gbps DFB laser modules and its application to improve high frequency characteristics

A small-signal equivalent circuit model of 2.5 Gbps DFB laser modules with butterfly-type dual-in-line packages has been proposed and verified using extracted parameters. Parameters related to the equivalent circuit have been extracted from measured S parameters using the modified two-port black box model. This model includes small-signal equivalent circuits of components used for 2.5 Gbps DFB laser modules such as DFB laser, coplanar waveguides, matching resistor, bonding wires, and thermoelectric cooler (TEC). From this equivalent circuit modeling, we show that calculated frequency characteristics of DFB lasers on submount and complete DFB laser modules are similar to their measured frequency characteristics, respectively. Based on this equivalent circuit model, we propose and demonstrate a method that can improve frequency characteristics of 2.5 Gbps DFB laser modules through both experiments and simulations.     

Weakly superconducting circuits

An equivalent circuit has been developed for the time-dependent dissipating state of superconductivity which accompanies quantum phase slip. This equivalent circuit is used here to analyze the superconducting thin-film ring magnetometer and to determine its operating characteristics in terms of measurable circuit parameters.