全固高非线性低色散斜率光子晶体光纤设计

提出了利用掺氟同心圆环的光纤结构来提高光子晶体光纤(PCF)的非线性,所需控制的参量仅有两个。设计了三种具有高非线性、低色散斜率和低限制损耗的全固光子晶体光纤。这三种光纤分别具有正常色散、双零色散点和零色散点恰好在1.55 μm波长处的色散曲线特性。所设计的零色散点恰好在1.55 μm波长处的光子晶体光纤色散斜率值为5.12×10-4 ps/(km·nm2),这比传统的高非线性光纤的色散斜率小了2个数量级。同时,该光纤在1.55 μm波长处的非线性系数为31.5 W-1·km-1,限制损耗为9.62×10-5 dB/km。     

空芯反谐振光纤2.60～4.35 μm中红外激光传输及损耗表征

为了研究空芯反谐振光纤的中红外激光传输能力,使用自制的无节点空芯反谐振光纤进行了2.60～4.35 μm的中红外激光传输实验.该空芯反谐振光纤包层由七根平均壁厚为800 nm的玻璃毛细管组成,光纤外径为365 μm,纤芯直径为115 μm.使用中红外可调谐光参量振荡器作为光源,测试了光纤在2.60,3.27,3.41,...     

单模光纤接续应注意的技术问题

单模光纤是在给定的工作波长中只传输单一基模的光纤,它不存在模式色散,所以具有相当宽的传输频带,运用于长距离大容量的传输.单模光纤的纤芯直径只有8～10 μm,包层直径为125 μm,可以制作得很长,但是为了制造、运输与施工的方便,通常光缆的出厂长度为1～6 km.单模光纤的传输损耗现低达0.2 dB/km(1.55 μm),光缆接续长度不宜小于2 km.     

中红外空芯光纤技术现状与发展趋势(特邀)

中红外光纤作为中红外领域的重要器件，在中红外激光产生与传输、生物医学检测、环境检测等领域有着重要应用。然而中红外光纤长期存在制备困难、制备材料化学稳定性差等问题，限制了其发展。与实芯光纤相比，空芯光纤通过构建包层微结构将光波限制在空气中传输，可以大幅降低光纤光学性能对制备材料的依赖，从而为光波传输提供一个低损耗、低色散、低延迟、低非线性、高损伤阈值的理想传输通道，这为中红外光纤的发展拓宽了道路。文中从光纤结构、拉制方式、材料吸收、传输性能等方面分析了石英基和软玻璃基中红外空芯光纤的发展历程、研究现状和应用前景。并通过理论仿真分析了石英基单圈结构和嵌套管结构反谐振空芯光纤吸收损耗、限制损耗与纤芯、壁厚、波长之间的关系，为低损耗中红外反谐振空芯光纤的制备和应用提供了理论指引。     

平坦色散低限制损耗光子晶体光纤的设计

为了得到一种新的具有低限制损耗和平坦色散的光子晶体光纤,设计了具有6层空气孔的正八边形结构,将包层分布为3种不同空气孔直径d1,d2,d3,采用多极法数值模拟了这些结构参量对其色散特性和限制损耗的影响.得列在1.3μm～1.72μm波长范围内,光纤的色散系数介于-0.1ps/(km·nm)～0.58ps/(km·nm)...     

一种双包层低损耗色散平坦光子晶体光纤

借助多极法对具有双包层、双孔间距结构光子晶体光纤的色散特性,限制损耗,模场面积进行数值模拟,研究调整内外包层参数对色散和损耗的影响.通过优化结构参数,设计了可以在1.29～1.82μm的波长范围内实现±0.5ps/(km·nm)低色散值的色散平坦光子晶体光纤,其在λ=1.55μm处,限制损耗为2.2×10-3dB/km...     

低损耗平坦零色散光子晶体光纤的研究

设计了一种波长在800nm处具有低损耗平坦零色散特性的光子晶体光纤结构,应用多极法研究了结构参量空气孔直径d、孔距Λ对色散特性的影响和最外层空气孔直径对损耗的影响。该结构光纤在771～831nm波长范围内色散绝对值小于2ps/(nm.km),800nm处损耗为0.72dB/km。     

一种红外波段低损耗空芯反谐振光纤的设计与研究

提出一种红外波段低损耗的空芯反谐振光纤,石英包层管为半圆半椭圆拼接结构,采用全矢量有限元法进行设计与研究。半椭圆管的半短长轴与半圆管的半径相等,将半圆管与半椭圆管进行拼接,改变半圆的半径以及半椭圆管的半长轴来改变靠近纤芯处的负曲率以及远离纤芯的正曲率,进而研究包层管的正负曲率对空芯反谐振光纤的损耗特性的影响,设计应用于1. 5~3. 0μm波段的低损耗空芯反谐振光纤。结果显示负曲率较小正曲率较大时限制损耗效果更好。当靠近纤芯处为圆形半管远离纤芯处为椭圆半管,圆形半径ry=25μm,椭圆的半长轴rx=65μm,半短长轴ry=25μm时,光纤最低限制损耗在波长2. 1μm处为8. 22×10^-2dB/km。     

光纤在1.5μm波段零色散波长的长距离大容量传输

石英系光纤在1.5μm波长附近传输损耗最低,在1.5μm波段波长色散为零,最适于长距离大容量传输。一般,波长色散在1.3μm波段为零,可是,如果改变光纤结构(折射率分布形状和芯径等),零色散波长会移到1.5μm波段。以前,光纤的传输损耗大。最近,通常的光纤损耗都能保持在0.2dB/km,光纤在1.5μm波段为零色散波长。一些国家开始进行长距离大容量系统实验。例如:英国普莱塞公司使用平均损耗为0.21dB/km     

低损耗近零超平坦色散光子晶体光纤的设计

设计了一种用于买现低损耗、近零超平坦色散特性的光子晶体光纤结构,这种结构光纤包层空气孔层数少,内三层空气孔直径相同,制作过程简单;应用多极法研究了此结构PCF各个参数特别是最外层空气孔直径对色散和损耗特性的影响,通过优化结构,设计出了在1.3μm至1.65μm波长范围内色散绝对值小于0.5ps/（nm.km）,1.55μm处损耗为4.5dB/km的低损耗近零超平坦色散光子晶体光纤。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.