基于相位补偿的BPSK相参脉冲串信号多普勒频率变化率估计算法

目标与观测平台之间径向加速度引起的接收信号多普勒频率变化率的精确估计对于高精度单站无源定位与跟踪具有重要意义。该文针对脉内相位调制信号的频率变化率不能直接表征多普勒频率变化率的问题,首先引入相位补偿的方法消除BPSK相位调制序列的影响,然后针对固定脉冲重复频率和脉冲重复频率抖动两种情况分别提出了径向加速度引起的多普勒频率变化率的精确估计方法,并且给出了多普勒频率变化率与采样频率、观测时间及脉冲重复频率之间的约束关系。仿真结果表明,典型参数条件下该文提出算法的信噪比门限比已有算法低约4~6 dB。     

相参脉冲序列频率估计的小波变换方法

在单站无源定位与跟踪系统中,接收信号的多普勒频率变化率信息对运动目标的状态估计和定位非常重要。对于脉冲体制的雷达来说,信号持续时间较短,很难精确测量多普勒频率变化率。小波变换在时频域同时具有良好的局域特性和较低的信噪比门限。文章引入了小波变换方法实现单站无源定位与跟踪系统的参数估计,推导了相参脉冲序列的小波变换方法。数值仿真证明该方法能实现脉冲的相参积累,大幅提高参数的估计精度。     

相参脉冲序列PRI变化率的高精度估计方法

在单站无源定位与跟踪系统中,PRI变化率信息反映了运动目标的径向加速度信息。提出了一种新的PRI变化率估计的算法,利用脉冲载频之间的相参积累,使信噪比得到提高,通过群延迟,使PRI的变化量得到积累,推导出一种快速而精确测量PRI变化率的算法,数值仿真证明使用该算法可以精确快速地估计信号中的PRI变化率信息。     

相参脉冲信号频率估计的CRLB与信噪比阀值

在基于差分Doppler技术的高精度单站无源定位中，辐射源频率(或其变化率)的高精度测量对定位是十分重要的。文章研究了相参脉冲信号频率估计的CRLB界，并推导了ML算法的简化估计方差公式，根据此简化的估计方差公式可以容易的得到相参脉冲信号频率估计的信噪比阀值。计算机仿真证明了理论分析的正确性。     

相参脉冲序列多普勒变化率的一种快速高精度测量方法

雷达信号中的多普勒变化率信息的估计可以获得运动目标的加速度信息。但由于这一信息非常微弱,且脉冲信号的持续时间很短,多普勒变化率的精确测量也十分困难。本文利用了脉冲载频之间的相参特性,等效地延拓了信号的有效观测时间,推导出一种快速而精确的算法。数值仿真证明了使用该方法可以精确快速地估计信号中的多普勒变化率。     

一种PCM相参脉冲序列多普勒频率变化率估计算法

相位编码调制信号是一种典型的脉冲压缩信号,广泛应用于脉冲压缩体制的低截获概率雷达中。来波信号中多普勒频率变化率的高精度估计是基于质点运动学原理的单站无源定位与跟踪的一个关键技术。该文针对信号脉内相位调制和多普勒频率变化率信息非常微弱的特点,提出了一种快速高精度估计算法,通过相邻脉冲间的时域相关消除了相位调制对参数估计的影响,频域积累增强了信噪比,利用脉冲间的相参特性进行频谱相关消除了相位模糊,并放大了多普勒频率变化率信息。算法计算量小,为实际应用提供了良好条件。计算机仿真结果证明了算法的有效性。     

基于Wigner-Hough变换和中值滤波的加速度估计

当雷达发射脉冲个数比较少、噪声方差比较大时,单独使用Wigner-Hough变换(WHT)估计目标径向加速度时会有较大的误差,针对这一问题提出一种Wigner-Hough变换和中值滤波相结合的估计加速度方法,首先研究了相参脉冲回波信号Wigner-Ville分布(WVD)特点,讨论了谱峰位置与瞬时频率的关系,然后采用Hough变换和中值滤波方法时Wigner-Ville分布(WVD)峰值信息进行处理来提取信号的调频率,最后根据加速度估计公式估计出目标加速度,最后进行了仿真验证,在不同积累脉冲个数和信噪比条件下证明了该算法的有效性.     

一种脉冲群间多普勒频率变化率的估计算法

提出了一种脉冲群间多普勒频率变化率估计算法,该算法利用离散傅里叶变换进行脉冲间相参积累,获得脉冲群的相对模糊频率,通过脉冲群间相对模糊频率差分获得多普勒频率变化率。算法具有计算量小、多普勒频率变化率估计精度高的优点。计算机仿真结果证明了算法的有效性。     

一种关于LFM相参脉冲信号多普勒频率变化率的估计算法

LFM信号在雷达和通信中得到广泛应用,对于单站无源定位与跟踪系统来说,获取LFM信号中多普勒频率变化率信息具有十分重要的现实意义.接收信号的多普勒频率变化率十分微弱,很难精确测量.本文提出了基于渐近小波变换的多普勒频率变化率估计算法,通过对LFM信号的渐近小波变换谱做相关,增强了多普勒频率变化率信息,消除了调频率对参数估计的影响.数值仿真表明参数估计的精度接近CRLB,能达到单站无源定位与跟踪系统的精度要求.     

基于小波变换的多普勒频率变化率高精度估计方法

在单站无源定位与跟踪系统中,获取多普勒频率变化率信息对运动目标的状态估计和定位具有非常重要的意义.多普勒频率变化率非常微弱,很难精确测量.小波变换是一种时频局域化的分析方法,具有较低的信噪比门限.本文提出了基于小波变换的多普勒频率变化率估计方法,计算机仿真研究表明本文提出的方法具有较低的信噪比门限,并且可以快速精确地实现参数估计.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.