Improved design of tuned optical receivers

We present new design principles for improved heterodyne tuned optical receivers where several tuning inductances reduce the influence of thermal receiver noise over a broad frequency range. A theoretical example for a 600 MHz tuning bandwidth shows a reduction of thermal receiver noise (and thus in required local oscillator power) of up to 13dB. The example is tested experimentally for the so-called mixed tuning configuration. We obtain good agreement with the theoretical predictions. The experimental RMS noise current is <5pA/?(Hz) over a 580 MHz bandwidth with the lowest value of 3-5 pA/?(Hz) at 950MHz.     

Tuned front-end design for heterodyne optical receivers

A theoretical analysis of the noise performance of optical receivers with front-end tuning, suitable for wideband coherent systems, is presented. An algorithm for choosing the values of the tuning components in the front end so as to minimize the thermal noise output power has been developed. This theory is applied to the well-known simple parallel and serial tuning configurations and also to three more advanced designs. It is shown that any tuning is better than none in the wide-bandwidth designs considered and that the more advanced designs yield up to 12-dB reduction in thermal noise power. Two of the designs can be implemented with discrete components and should yield shot-noise-limited detection with 50-100 μW of local oscillator power in receivers with 5-GHz bandwidth. The practical problem of equalizing the front-end response is considered, and it is shown that good performance can be expected using realizable components     

调谐光接收机的研究与制作

本文利用统一的分析方法研究了各种ｐｉｎ－ＦＥＴ电感调谐光接收机的特性，并设计制作了调谐光接收机，结果显示，实验数据同理论分析相一致，该调谐光接收机３ｄＢ带宽达６００ＭＨｚ，可用于０．９￣１．５ＧＨｚ的微波副载波光通信系统。     

A single-chip GaAs MMIC image-rejection front-end for digitalEuropean cordless telecommunications

An active image-rejection filter is presented in this paper, which applies actively coupled passive resonators. The filter has very low noise and high insertion gain, which may eliminate the use of a low-noise amplifier (LNA) in front-end applications. The GaAs monolithic-microwave integrated-circuit (MMIC) chip area is 3.3 mm² . The filter has 12-dB insertion gain, 45-dB image rejection, 6.2-dB noise figure, and dissipates 4.3 mA from a 3-V supply. An MMIC mixer is also presented. The mixer applies two single-gate MESFETs on a 2.2-mm² GaAs substrate. The mixer has 2.5-dB conversion gain and better than 8-dB single-sideband (SSB) noise figure with a current dissipation of 3.5 mA applying a single 5-V supply. The mixer exhibits very good local oscillator (LO)/RF and LO/IF isolation of better than 30 and 17 dB, respectively, Finally, the entire front-end, including the LNA, image rejection filter, and mixer functions is realized on a 5.7-mm ² GaAs substrate. The front-end has a conversion gain of 15 dB and an image rejection of more than 53 dB with 0-dBm LO power. The SSB noise figure is better than 6.4 dB, The total power dissipation of the front-end is 33 mW. The MMIC's are applicable as a single-block LNA and image-rejection filter, mixer, and single-block front-end in digital European cordless telecommunications. With minor modifications, the MMIC's can be applied in other wireless communication systems working around 2 GHz, e.g., GSM-1800 and GSM-1900     

Noise performance of Gbit/s tuned optical receivers

We present design criteria for minimising the influence of f2 noise in broadband heterodyne optical receivers using a serial or parallel tuning inductor. The criteria are tested experimentally in a 2GHz-bandwidth front-end design. A 4dB receiver sensitivity improvement is demonstrated for a 400 Mbit/s ASK heterodyne application, and a 1 dB/2 dB sensitivity improvement is demonstrated for a 2 Gbit/s direct-detection/homodyne application.     

Broad-band GaAs monolithic equalizing amplifiers formultigigabit-per-second optical receivers

The authors discuss the development of ICs (integrated circuits) for a preamplifier, a gain-controllable amplifier, and main amplifiers with and without a three-way divider for multigigabit-per-second optical receivers using a single-ended parallel feedback circuit, two (inductor and capacitor) peaking techniques, and advanced GaAs process technology. An optical front-end circuit consisting of a GaAs preamplifier and an InGaAs p-i-n photodiode achieves a 3-dB bandwidth of 7 GHz and -12-dBm sensitivity at 10 Gb/s. Moreover, a gain-controllable amplifier obtains a maximum gain of 15 dB, a gain dynamic range of 25 dB, and a 3-dB bandwidth of 6.1 GHz by controlling the source bias of the common-source circuit. Gain, 3-dB bandwidth, and output power of the main amplifier with the three-way divider are 17.4 dB, 5.2 GHz, and 5 dBm, respectively. These ICs can be applied to optical receivers transmitting NRZ signals in excess of 7 Gb/s     

Broadband GaAs FET optical front-end circuit up to 5.6 GHz

Design and performance of transimpedance preamplifiers for multi-gigabit/s optical repeaters are reported using 0.3 ?m gate length GaAs FETs and a Ge-APD with a sensitive area of 30 ?m diameter. Through reduction of parasitic inductance and stray capacitance in chip assembly, a 3 dB down bandwidth of 8.2 GHz is achieved without a Ge-APD. A 3 dB down bandwidth of 5.6 GHz and good pulse response to 6.5 Gbit/s RZ pattern optical signals are achieved in an optical front-end circuit with a Ge-APD.     

砷化镓PIN管单片限幅器

<正>在微波功率发射系统中,为防止高灵敏接收机前置低噪声放大器(LNA)被发射的泄漏功率烧毁,需在前置低噪声放大器前面安置PIN二极管限幅器。通过控制PIN二极管的工作状态,在高功率的微波信号通过限幅器时,被衰减到较低的功率电平,而小功率微波信号则以较小的插损顺利通过。GaAsPIN二极管是实现单片限幅器的首选技术。GaAsPIN二极管在微波频段具有低的导通电阻,小的结电容,高击穿电压,易于集成等特点,因此采用GaAsPIN二极管的单片限幅器具有插损小、体积小、耐功率高等优点,受到广泛重视。南京电子器件研究所技术人员,基于现有的MOCVD材料生长技术和φ76mm砷化镓工艺线,成功开发了一套完整的砷化镓PIN管限幅器单片生产技术,其中包括GaAsPIN管的结构设计,GaAs限幅器的电路设计以及GaAs限幅器的工艺技术。已研制出的产品在各个频段带内具有低插损,承受功率大,泄漏电平低,无需外加偏置等优点。具体性能参数如表1所示。     

11 GHz bandwidth optical integrated receivers using GaAs MESFET andMSM technology

State-of-the-art performance of GaAs-FET-based monolithic optoelectronic integrated circuit (OEIC) receivers is reported. The OEIC receiver achieves -3-dB bandwidth as high as 11 GHz for optical signals at a wavelength of 850 nm. The feedback resistance of the receiver is 1000 Ω and the effective transimpedance into a 50 Ω load is 565 Ω. The effective transimpedance-bandwidth (TZBW) product is 6.1 THz-Ω. This ultra-high-performance receiver was implemented via a high-yield, low-cost direct ion implanted GaAs MESFET technology with a 0.6-μm gate length and a metal-semiconductor-metal (MSM) detector with 2-μm lines×3-μm spacings     

GaAs MMIC设计及其可靠性研究

文章使用PPH25X工艺3.2mm栅宽的PHEMT功率管芯设计了一款单级功率放大器。经过ADS软件仿真得出较理想的仿真结果。流片后比较了仿真结果与测试结果,在8.5GHz~10.5GHz的频率范围内的实际测试小信号增益在7dB左右,在输入功率为24.8dBm的情况下,输出可以达到33dBm,输入驻波基本小于2。最后利用寿命加速实验对所设计的芯片进行了可靠性评价。经验证,沟道温度选取240℃、260℃和280℃的失效机理一致,在寿命加速分布图上外推出了该器件正常工作条件下的平均失效前寿命。     

砷化镓单片微波集成电路工艺述评

本文讨论了砷化镓单片微波集成电路的优缺点、工艺特点、应用领域和今后展望.     

The flip-chip bump interconnection for millimeter-wave GaAs MMIC

The flip-chip bump interconnection structure has become popular for microwave and millimeter-wave package applications. This structure is expected to provide higher performance and a low cost packaging method. This paper presents the results of an evaluation of flip-chip assembled radio frequency (RF) devices. A coplaner transmission line type GaAs monolithic microwave integrated circuit (MMIC) was mounted on an aluminum oxide (Al₂O₃) substrate using the flip-chip thermal compression method. The electrical performance (S-parameter and noise figure) was measured and the reliability of the interconnection was tested. The changing rate of the characteristic impedance (Zo) of transmission line on bare-chip caused by bare-chip surface proximity to a substrate was simulated by finite element method (FEM) analysis. Flip-chip bonding conditions were fixed to keep the gap that less than 1% of Zo changing rate and sufficient bonding strength for reliability of interconnection. The DC characteristics of a 30 GHz, 60 GHz and 77 GHz band low noise amplifier (LNA) were the same before and after mounting, and the RF performance of the assembled MMIC was the same as the bare-chip without packaging. However, the influence of underfilling was observed. When epoxy resin was injected into the gap between the bare-chip and the substrate, the frequency band of the MMIC shifted to the low side. The reliability of the bump interconnection was excellent. The interconnection resistance did not change in a temperature cycle (-55°C to +125°C until 1500 cycle) test     

GaAs MMIC CAD Design Center

Nanjing Electronic Devices Institute Ga As MMIC CAD Center has HP、 SUNworkstation systems with EDA softwares such as HP EEsof、CADENCE、COMPACT,andEM Simulators such as Ansoft、 IE3D. And it also has the Integrated DevicesCharacterization Analysis Program HP IC- CAP with a complete set of microwave on- wafettest system.With the capability of MMIC design,devices model extracting and librarybuilding,layout design and CAD software developing,the MMIC CAD Center hasun…     

GaAs微波单片集成电路中器件的精确建模

论述了精确模型的建立对于微波单片集成电路研制和产品开发的重要意义 ,介绍了工程模型的概念和提取模型的方法 ,给出了在南京电子器件研究所进行的 MMIC有源器件的建模实例及验证结果。     

Ka波段GaAs耿氏单片压控振荡器

介绍一个以GaAs Gunn器件为振荡元件的Ka波段微波单片压控振荡器(MMIC VCO)。它以工艺相容的Schottky二极管为调谐元件,采取微带耦合的电路形式。该MMIC VCO制作在5mm×3mm的GaAs芯片上,其中包含了一个Gunn管、一个变容管、匹配网络以及两个直流偏置。单片测试结果:在34.6GHz下得到了3.03mW的输出功率,最大电调带宽90MHz。这是国内Ka波段MMIC VCO的首次报道,其性能接近国外1987年的实验室研制水平;同时也是国内首片毫米波段的MMIC。采用了TOUCHSTONE软件包,进行了毫米波段电路的CAD优化尝试,取得了较为满意的结果。     

GaAs MMIC broadband SPDT PIN switch

The first GaAs MMIC using PIN diodes as the active elements is described. The single-pole double-throw (SPDT) switch covers the frequency range 2 to 18 GHz, and can handle incident powers of 1W at X-band. Isolation and insertion loss vary respectively from ? 55 dB and 1 dB at 2 GHz to ?17 dB and 2.2 dB at 18 GHz.     

宽带GaAsFET微波单片集成单刀双掷开关

本文报道了一种采用串、并联ＦＥＴｓ结构的ＧａＡｓＭＭＩＣ单刀双掷开关。芯片尺寸为０．９７＊１．２３ｍｍ．在ＤＣ－１０ＧＨＺ频率范围内，插入损耗小于２．２ｄＢ，隔离度大于３２ｄＢ，反射损耗大于１２ｄＢ，并关时间小于１ｎｓ，在５ＧＨＺ下的功率处理能力大于２０ｄＢｍ。此开关具有极低的直流功率耗散。     

A GaAs HEMT MMIC chip set for automotive radar systems fabricatedby optical stepper lithography

A 77 GHz automotive radar system for collision avoidance and intelligent cruise control has recently gained interest because of its huge market potential. The questions of the optimum technological and system approaches leading to both low cost and high performance have not yet been finally answered. The approach to this problem reported here differs mainly in two aspects from the GaAs monolithic microwave integrated circuit (MMIC) solutions described earlier: (1) 0.12 μm gatelength pseudomorphic high electron mobility transistors (PHEMTs) are fabricated by optical stepper lithography, (2) a coplanar design is used. A fully passivated PHEMT MMIC fabrication process is reported with current-gain and power-gain cutoff frequencies exceeding 115 and 220 GHz, respectively. The design and performance of a chip set consisting of four different MMICs [voltage controlled oscillator (VCO), harmonic mixer, transmitter, receiver] are described. The great potential of this MMIC approach to meet all system requirements of an automotive radar sensor in a cost-effective and production-oriented way is shown. To our knowledge, this is the first demonstration of W-band coplanar multifunctional MMICs fabricated by optical stepper lithography     

用于手机砷化镓MMIC射频开关的研制

报道一种用于手机的高功率、低插损砷化镓 MMIC射频开关。该产品在 870～ 970 MHz下 ,线性功率容量 >3 3 d Bm,插入损耗 (IL) <0 .6d B,隔离度 (Iso)≥ 1 7d B,反向三阶交调 (PT0 1 )≥ 70 d Bm,控制电压 :(0 ,-4) V。