钛酸铅热释电薄膜集成红外传感器

最近,由于大量潜在的应用需要,如遥感、红外医学热象和气体探测,室温工作的红外传感器已受到相当重视,PbTiO_3因其热释电系数大且居里温度高,所以它具有优良的热释电特性。本文,我们试验制作了一种可获得红外成象的PbTiO_3薄膜线型列阵探测器,并研究了列阵探测器的基本特性。图1给出了PbTiO_3薄膜集成探测器线列的简单结构。衬底为厚约20～50μm的云母片、单晶硅和硅膜。在硅膜衬底中,灵敏元背面的部分硅被用择优腐蚀方法去除,留下的厚约     

高精度激光与红外对抗材料特性测试系统的设计

激光与红外干扰材料的特性测量中,为克服热像仪温度分辨率低的缺点,设计了高精度激光与红外对抗材料特性测试系统,该系统光源采用带精密功率和温度控制的半导体激光器(1.06μm)和中远红外辐射板(3～5μm,8～12μm),并采用斩波频率为12 Hz的机械斩波方式.探测器选用高灵敏度的带滤光片的PIN管和热释电探测器,光学接收系统采用φ178 mm的卡塞格伦聚光接收系统,测试系统的软件用Measurement studio编写,采用了128阶FIR数字带通滤波器和AR功率谱模型进行数字信号处理,系统透过率测量分辨率＞0.5%,测量精度＞1%,测量距离＞200m,并且提供了完备的试验数据和图表的分析、统计的功能.     

金属—介质—金属结构的热释电探测器的红外吸收

本文应用多层介质薄膜的特征矩阵理论,研究了具有金属-介质-金属结构的热释电探测器的红外吸收特性,着重计算了当热释电介质材料具有红外吸收时探测器结构的吸收率。指出,通过优化参数选择,可以采用上述结构制成快速响应的热释电探测器。     

基于多层MIM结构超材料的耐高温波长选择性宽带红外隐身特性研究

超材料是一种人工复合结构,因非凡的红外发射/吸收调控能力,成为实现红外隐身技术的有效途径。针对当前超材料实现波长选择性红外辐射隐身的不足,提出和设计了基于耐高温金属材料钼Mo的多层金属 介质 金属(MIM)结构超材料,同时实现了5～8μm波段的宽带高发射(吸收)和中红外波段3～5μm、远红外波段8～14μm的宽带低发射(吸收)。进一步研究表明该隐身结构耐高温性能非常突出,在500～2500K温度范围内其红外辐射特征都能被抑制,同时,红外辐射的角度选择性也很好,75°范围内时5～8μm和8～14μm波段辐射特性无明显变化。该工作为新型耐高温波长选择性宽带红外隐身技术提供了一个新的途径。     

热释电红外检测器研究探讨

热释电材料在吸收红外辐射后其温度会发生变化,从而产生极化.将其连接在电路中,则会有与温度变化率成比例的电信号产生.热释电红外检测器就是利用材料的热释电效应在红外光谱范围内检测物体吸收到的辐射能量的.根据形态,热释电材料分为体材料和薄膜材料.相比之下,后者具有体积比热小、灵敏度高、成本低和易于集成化的特性,因而其制备、性能和应用已成为热释电材料的研究方向.目前热释电红外检测器的研究已经取得了实用性的成果,如辐射计、测速计、测温计等实用设备或仪器的制作生产.随着研究的深入,具有广阔市场前景的热释电红外检测器将得到更为广泛的应用.     

基于弛豫铁电单晶的红外热释电探测器研究

研究了新型热释电材料驰豫铁电单晶(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3(PMNT)的低损伤减薄工艺、电极成型和耦合封装等关键技术,研制了基于PMNT的单元热释电探测器。对减薄后约30μm晶片材料性能的测试分析表明,部分样品的热释电系数约为9.0×10-4 C/m2 K,无明显衰减。采用低噪声电路提取单元探测器的微弱热释电电流,对所研制的单元探测器性能进行了测试分析。     

非制冷红外探测器用热释电陶瓷材料研究进展

热释电材料是非制冷红外探测器的关键敏感材料之一。介绍了非制冷红外探测器用热释电材料的分类以及国内外研究现状,重点评述了介电模式工作的热释电陶瓷材料的研究进展,并指出了它的发展方向。     

PLCT系列热释电薄膜的最新研究进展

热释电红外探测器广泛应用于辐射测温，红外光谱测量，安全警戒，红外热成像等领域。掺杂钛酸铅薄膜是性能优异，应用广泛的热释电薄膜，文章主要介绍了镧，钙双掺的钛酸铅薄膜的性能。比较了不同组分的PCT、PLT、PLCT铁电材料的制备方法、结晶性、铁电性、介电性及热释电性能与分组的关系，并对PLT系列热释电薄膜材料的应用前景作了探讨。     

热释电红外探测器研究

热释电红外探测器广泛应用于激光与辐射测量。文章描述了平面型红外热释电探测器的工作原理和适用于红外测试的探测器结构,介绍了探测器主要性能参数的测量,最后给出了平面型探测器与空腔型探测器的比对试验结果.     

一种新型毫米波激光能量探测器

热释电探测器过去多用于10μm甚至更短的波长,因为大多数热释电材料在这一波长范围具有最佳吸收特性。但研究表明,诸多材料在毫米波段仍然能保持较强的吸收,这就为热释电效应应用于毫米波激光探测提供了理论依     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.