自稳零低噪声CTIA读出电路研究

红外探测器在国防航天领域应用广泛,其低噪声读出电路是获得有用清晰红外图像的基础。当探测器工作在高背景微弱信号下时,常出现噪声扰动大,各元信号高低不平,部分信号无法读出的问题。针对国内航天工程应用需求,文章设计了一种低噪声的新型读出电路。该电路在传统CTIA的基础上,设计了自稳零技术和新型相关双采样电路,对噪声抑制表现出优良的作用。可应用于低温中波线列红外HgCdTe航天探测器的信号读出以及其他低温和常温探测器的信号读出,工作温度范围为77~300K。基于0.35μm,5V-CMOS工艺进行了10×1线列读出电路后仿真验证与流片,结果表明,与传统CTIA电路对比,输出噪声下降44.7%,总输出噪声仅为72.1μV。     

红外焦平面列级ADC数字读出电路测试技术研究

数字化红外焦平面器件是焦平面发展的重要方向,其核心是读出电路集成高性能模数转换器(ADC)。分析了读出电路数字化输出后焦平面性能参数的评价方法,阐述了红外焦平面列级ADC的静态测试和动态测试方法,提出了基于斜坡电压输入的过采样原理测试ADC静态性能,提升无误码分辨率测试正确性。针对ADC静态测试和动态测试要求,结合Labview软件和数字采集卡搭建了软硬件测试平台,并通过一款数字焦平面芯片的测试,验证了测试方法和平台适用于行列级ADC数字化读出电路的测试评价。     

数字化中波红外焦平面探测器组件研究进展

介绍了美国、以色列、法国等西方发达国家在数字化中波红外焦平面探测器方面的研究现状及发展趋势。从数字读出电路（ROIC）角度出发,阐述了上述三个发达国家开发的列级ADC数字化中波红外焦平面探测器的最新研究成果。在SWaP概念牵引下,以色列、法国都推出了小像元（中心距为10 m及以下）、高温工作、数字化输出的百万像素中波红外焦平面探测器组件。最后介绍了昆明物理研究所在数字化红外焦平面探测器组件研究方面取得的最新进展。昆明物理研究所突破列级ADC数字读出电路关键技术后,研制出一系列中心距（15 m、20 m、25 m）的640512列级ADC数字化中波红外焦平面探测器组件,主要技术指标与国外同类数字化中波红外焦平面探测器组件相当。     

微光CMOS图像传感器读出电路研究

高性能的信号读出电路是微光CMOS图像传感器的重要组成部分,如何降低读出电路噪声,提高读出电路输出信号的信噪比成为读出电路设计的重点。本文设计了一种高增益低噪声的电容反馈跨阻放大器CTIA（Capacitive Trans impedanceAmplifier）与相关双采样电路CDS （Correlated Double Sampling）相结合的微光探测器读出电路。在CTIA电路中,采用T网络电容实现fF级的积分电容,并通过增益开关控制,来达到对微弱光信号的高增益低噪声读出。采用CSMC公司的0.5μm标准CMOS工艺库对电路进行流片,测试结果表明：在光电流信号为20~300 pA范围内,积分时间为20μs,该电路功能良好,信噪比（SNR）达到10,能应用于微光CMOS图像传感器。     

基于可编程开窗IP核的低功耗读出电路研究EI北大核心CSCD

红外焦平面探测器正朝着更大规模、高帧频、高集成度的方向发展。在高速目标跟踪探测、感兴趣区域成像等应用场景,需要解决高速读出时面临的功耗较高的难点。文中提出了一种数字IC的可编程开窗IP核设计,并通过采用列级分时选通技术,实现对640×512读出电路列模块的超低功耗优化。像素单元电路包含CTIA输入级、双采样保持结构和跟随输出,折衷优化了面积、噪声和增益等因素。相较于传统用门级电路定制设计实现的开窗方式,可编程开窗数字IP核对于不同面阵规格具有良好的可扩展性,并且可以借助后端软件综合优化版图布局,从而缩短设计周期。实际研制中采用0.18μm标准CMOS工艺完成了中心距15μm的640×512读出电路设计及流片验证,并与640×512元短波红外InGaAs探测器芯片进行了耦合测试,结果表明分时选通技术有效降低了列级电路功耗,电路读出总功耗小于80 mW,列级功耗仅为15 mW,读出速率达到15 MHz,可编程开窗IP核功能正常,可以实现指定区域的开窗功能。     

高速数字化三维集成式CCD-CMOS图像传感器

为了解决CCD与CMOS工艺兼容性低、互连集成制作难度大,以及芯片间接口匹配和高性能兼备等问题,对CCD器件拓扑结构与像元、CMOS读出电路、三维异质互连集成及高密度引脚封装等技术进行研究,提出了一种1024×256阵列规模的集成式CCD-CMOS图像传感器。该器件实现了CCD信号的高精度数字化处理、高速输出及多芯粒的技术融合,填补了国内CCD-CMOS三维集成技术空白。测试结果表明:集成CCD-CMOS器件的光响应和成像功能正常,双边成像效果良好,图像无黑条和坏列,互连连通率(99.9%)满足三维集成要求,实现了集成式探测器件的大满阱高灵敏度成像(满阱电子数达165.28ke-、峰值量子效率达86.1%)、高精度数字化(12bit)和高速输出(行频率达100.85kHz),满足集成化、数字化、小型化的多光谱探测成像系统要求。     

短波红外焦平面弱信号读出的高帧频模拟链路设计

针对短波红外焦平面阵列探测器弱信号耦合、高帧频输出和噪声抑制的要求, 文中设计了512256面阵探测器读出电路（ROIC）的高帧频模拟信号链路结构。完整的模拟信号链包含运放积分型（CTIA）单元输入级、相关双采样、电荷放大器和互补型输出级。在低温模型基础上,进行了前仿真和提取版图寄生参数的后仿真。仿真得到输出动态范围为2.8V,8路输出的工作帧频高于250Hz。基于CSMC-6S05DPTM0.5m 工艺完成流片,读出电路ROIC芯片的测试结果与仿真结果基本一致,为短波红外焦平面探测器弱信号读出提供了有效的设计选择。     

向数字化发展的红外焦平面列阵

在过去数年里,红外焦平面列阵(FPA)取得了显著进步,近来的研发重点已经集中到硅读出集成电路(ROIC)上,帧频增加、引入新型的信号处理功能是该领域的重要进展.因为优于具有模拟信号输出的探测器,具有数字信号输出的FPA备受关注.数模转换器(ADC)在芯片上的实现是数字FPA的基础,片上ADC有三种结构,即芯片级ADC、列级ADC和像元级ADC.主要通过对部分有关英语文献资料的归纳分析,介绍了数字化FPA的发展动向和趋势.     

面向超大面阵CMOS图像传感器的列总线自加速建立方法研究

在超大面阵CMOS图像传感器（COMS Image Sensor,CIS）中，由于像素面阵输出的列总线上存在超大的寄生电阻电容，列总线信号建立速度的主导因素发生改变，严重影响了读出速度.为了解决这一问题，本文提出了一种可应用于超大面阵CIS列并行读出机制的列总线自加速建立方法，基于电流增益增强理论，在不引入额外总线的前提下，通过对模拟信号建立过程的实时跟踪，加快列总线信号的变化过程，在列总线终端实现了自加速，将超长列总线的读出速度提升了一个数量级. 55 nm工艺下的测试与实验结果显示，采用本文提出的方法后，在亿级像素规模CIS列总线引入的寄生电容与寄生电阻分别为47 pF和20 kΩ的情况下，光电信号从像素节点到列级电路采样节点的上升建立时间由4μs缩短至790 ns，下降建立时间由22.43μs缩短至1.17μs，将亿级像素规模的CMOS图像传感器帧频提升至100帧，压缩了相关双采样的取样间隔时间，从而拓宽了噪声抑制的频率范围.本文方法实现了在保持低噪声和高速读出的同时，单列功耗仅有6.6μW.     

阵列型图像传感器模数转换技术

阵列型图像传感器的信号读出方式对整个传感器的性能有较大的影响。在新型的数字化图像传感器中,光电信号的多路传输在数字域实现,实现了信号的无损传输,提高了图像传感器的通道隔离度及抗干扰能力。模拟数字转换器（ADC）是数字化图像传感器的重要组成部分,其性能对整个成像系统的性能有重大影响。以阵列型图像传感器对ADC的要求入手,分析了ADC各性能参数对阵列型图像传感器性能的影响,介绍了数字化图像传感器的各类结构及适用于阵列型图像传感器的不同ADC及其实现方式。CMOS工艺技术的发展使得像素级ADC技术进入实用化阶段,像素级ADC技术可以利用数字积分技术有效提高图像传感器的动态范围,使得光电信号积分及多路传输都在数字域进行,极大地提高了图像传感器的性能。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.