基于石墨烯可饱和吸收的锁模光纤激光器研究

报道了一种基于单层石墨烯可饱和吸收体调Q锁模的全保偏结构掺铒光纤激光器。研究了单层石墨烯作为可饱和吸收体实现调Q锁模后的激光特征,获得了中心波长1557.69 nm的激光输出。调Q锁模脉冲包络重复频率11.49~40.41 kHz范围变化,包络宽度在10.1~3.62 μs范围变化。在泵浦功率为191.3 mW时,激光器最大输出平均功率9.354 mW,最大光-光转换效率为4.89 %。     

基于碲化铋纳米片的全光可控调Q光纤激光器

通过光学自组装方法制备了碲化铋可饱和吸收器件,并获得了该器件的非线性光学响应特性。将可饱和吸收体引入掺铒光纤激光器中,在抽运功率为170mW时,获得中心波长为1564.94nm,脉冲宽度为2.91μs的激光输出。通过外加连续光对非线性吸收器件进行调制,实现了脉冲持续时间和重复频率可调控的调Q光纤激光输出。     

被动调Q锁模掺镱光纤激光器

报道了基于偏振旋转技术等效快可饱和吸收体的被动调Q锁模光纤激光器,采用976 nm半导体激光器作为抽运源,高掺杂浓度的Yb3 光纤作为增益介质构成环形腔,通过调节抽运光功率和偏振控制器的角度得到了调Q,调Q锁模与锁模三种稳定的输出脉冲。获得的锁模脉冲中心波长为1.05μm,重复频率为20 MHz,脉冲光谱宽度为13.8 nm,抽运功率为270 mW时,锁模平均输出功率为15.82 mW;调Q频率为17.54 kHz,调Q脉冲宽度为8μs,光谱宽度为4.7 nm;调Q锁模中调Q重复频率为300 kHz。     

调Q和调Q锁模脉冲共存双波长光纤激光器

为了使光纤激光器同时运转在不同的工作状态,搭建了非线性偏振旋转（NPR）技术和碳纳米管可饱和吸收体（CNT-SA）混合的掺铒光纤激光器。其中,基于NPR效应的腔内双折射引入的梳状滤波器可以实现双波长输出,NPR和CNT-SA的可饱和吸收效应共同作用可以获得调Q或调Q锁模脉冲,因此在该激光器中通过调节参数可以使光纤激光器同时获得双波长调Q和调Q锁模脉冲输出。该双波长脉冲经滤波处理后,观察到1531.23 nm处的波长对应调Q脉冲,其重复率为45.62 kHz,1557.18 nm处的波长对应调Q锁模,调Q包络重复率也为45.62 kHz,包络内锁模脉冲的重复率为18.18 MHz,与激光器腔长相符。该实验结果增强了光纤激光器工作的灵活性,有望进一步拓展其在相关领域的应用。     

全光纤自调Q双包层Er-Yb共掺光纤环形激光器

报道了一种结构紧凑的自调Q双包层Er-Yb共掺光纤(EYDF)环形激光器。利用双包层EYDF同时作为增益光纤和可饱和吸收体,光纤光栅(FBG)作为波长选择器,实现了中心波长1 539.80nm的稳定自调Q脉冲输出。自调Q运转可在泵浦功率376~1 208mW的较大范围内获得,调Q重复频率从7.40kHz到64.2kHz连续可调谐。自调Q最短脉冲宽度为1.8μs,最大单脉冲能量为1.65μJ,最大平均输出功率为81.3mW,调Q脉冲的频谱信噪比(SNR)最高可达60dB。     

基于单壁碳纳米管的多波长被动锁模激光器

提出了一种基于单壁碳纳米管/聚酰亚胺复合材料薄膜和马赫-曾德尔型滤波器的多波长被动锁模掺铒光纤激光器。该环形腔掺铒光纤激光器以980nm的激光二极管作为抽运源,3.2m掺铒光纤作为增益介质,单壁碳纳米管作为可饱和吸收锁模器件。增加抽运功率到24mW时,得到中心波长为1559.3nm,3dB谱宽为1.4nm,平均输出功率为0.8mW的脉冲激光输出。然后在环形腔中,接入马赫-曾德尔型滤波器作为多波长选择器件,通过调整马赫-曾德尔型滤波器两臂光纤长度差,在室温下得到了3dB带宽内稳定的15个波长激光脉冲输出,波长间隔为0.1nm,连续0.5h观察,脉冲激光输出稳定。     

基于WS_2可饱和吸收体的被动调Q Tm,Ho:LLF激光器

利用二维过渡金属材料WS_2作为2μm波段可饱和吸收体,采用典型的X型四镜腔结构,实现了Tm,Ho:LuLiF_4激光器低阈值被动调Q运转。实验结果表明,吸收功率为260mW时开始启动调Q运转,吸收抽运功率大于650mW时,调Q激光脉冲进入稳定运转。抽运功率为2000mW时,在中心波长1895nm波段输出功率为88mW,典型脉冲宽度为4μs,重复频率为16.89kHz,对应最大单脉冲能量为5.21μJ。结果表明,WS_2材料可以作为2μm固体激光器的可饱和吸收体。     

基于金纳米笼的被动调Q钬镨共掺光纤激光器

报道了一种基于金纳米笼可饱和吸收体的3 μm被动词Q光纤激光器.采用结构紧凑的线型腔设计,在钬镨共掺光纤中实现了稳定的调Q脉冲激光运转.当泵浦功率达到99.7 mW时,开始出现稳定调Q状态,重复频率为82.0 kHz.当泵浦功率达到347.1 mW时,得到的最大平均输出功率为50.7 mW,最短脉冲宽度为2.21 μs,对应的重复频率为169.5 kHz.实验结果表明,金纳米笼在中红外波段光纤激光器中具有良好的应用前景.     

基于石墨烯可饱和吸收体的被动锁模、被动调Q掺镱光纤激光器

报道了石墨烯材料作为可饱和吸收体的被动锁模、被动调Q掺镱全光纤激光器。采用环形腔结构,在抽运功率为1.2W时,有稳定的重复频率为1.04MHz的自锁模脉冲发生,平均输出功率为46mW;当抽运功率增加到2.3W时,平均输出功率为170mW,相应的单脉冲能量高达163nJ,脉冲宽度约为680ps。采用线形腔结构,实现了石墨烯被动调Q激光脉冲输出,其重复频率在140～257kHz可调,最窄激光脉冲宽度为70ns,最大平均功率为12mW,相应最大单脉冲能量为46nJ。     

2μm掺铥光纤激光器连续和调Q运转的实验研究

采用二色镜和可变透过率腔镜作为谐振腔,实现了790nm半导体激光器端面泵浦下的双包层掺铥光纤激光器的连续和调Q运转。连续激光运转实验结果表明,在光纤长度和泵浦功率固定时,增益光纤存在激光输出功率最大情况下的最佳输出透过率,在70%最佳透过率时,得到激光中心波长1 930nm、输出功率5.9 W,斜率效率为46%。采用石墨烯分散液作为可饱和吸收体,插入增益光纤与输出镜之间,实现了掺铥光纤激光器的稳定被动调Q运转。当泵浦功率为3.4 W时,获得最大平均输出功率为39mW,对应的脉冲宽度为0.9μs,脉冲重复频率为67kHz,单脉冲能量为210nJ;平均输出功率、脉冲宽度与泵浦功率近似呈线性关系。     

A novel low-temperature method of SiO2 film deposition forMOSFET applications

Silicon dioxide dielectric films were deposited at low temperatures (250–300°) using a novel plasma enhanced MO-CVD process. In this process, the substrate was kept remote from the plasma region and the deposition of the film was achieved at low pressure (0.8-1.0 Torr) and low dc plasma power (0.3 W· cm⁻²). Films deposited using tetraethyloxysilane (TEOS) and nitrous oxide (N₂O) as reactant material had, under optimum deposition conditions, resistivities of ≥ 10¹⁵ ohm-cm, a refractive index of 1.46, a dielectric constant of 3.98 and a breakdown field strength ≥ 5x 10₆ V·cm⁻¹. AES and SIMS analysis indicated that the films were of high purity and were stoichiometric with no metallic silicon present. MOS-capacitors fabricated on Si-substrates showed no hysteresis and no frequency dispersion of capacitance in the accumulation region. An interface state density in the range of 10¹¹ cm⁻²eV⁻¹ was achieved for these MOS devices using our deposited SiO₂dielectric films.     

Carrier transport and related phenomena in MOS devices

Silicon-based devices are currently the most attractive group because they are functioning at room temperature and can be easily integrated into conventional silicon microelectronics. There are many models and simulation programs available to compute CV curves with quantum correction [Choi C-H, Wu Y, Goo JS, Yu Z, Dutton RW. IEEE Trans on Electron Devi 2000; 47(10): 1843; Croci S, Plossu C, Burignat S. J Mater Sci Mater Electron 2003; 14: 311; Soliman L, Duval E, Benzohra M, Lheurette E, Ketata K, Ketata M. Mater Sci Semicond Process 2001; 4: 163]. This work deals with the simulation of electron transfer through SiO₂ barrier of metal–oxide–semiconductor structure (MOS). The carrier density is given by a self consistent resolution of Schrödinger and Poisson equations and then the MOS capacitance is deduced and compared with results available in literature. As it is well known, the MOS capacitance–voltage profiling provides a simple determination of structure parameters. The extracted tunnel oxide thickness and substrate doping are compared with those used in the simulation. For the purpose to investigate the electron tunnelling through the barrier, we have used the transfer matrix approach. Using I–V simulations, we have shown that the traps in SiO₂ matrix have a drastic influence on electron tunnelling through the barrier. The trap-assisted contribution to the tunnelling current is included in many models [Maserjian J, Zamani N. J Appl Phys 1982; 53(1): 559; Houssa M, Stesmans A, Heyns MM. Semicond Sci Technol 2001; 16: 427; Aziz A, Kassmi K, Kassmi Ka, Olivie F. Semicond Sci Technol 2004; 19: 877; Wu You-Lin, Lin Shi-Tin. IEEE Trans Dev Mater Reliab 2006; 6(1): 75; Larcher L. IEEE Trans Electron Dev 2003; 50(5): 1246]; this is the basis for the interpretation of stress induced leakage current (SILC) and breakdown events. Memory effect becomes typical for this structure. We have studied the I–V dependence with trap parameters.     

Analytic approximation of the jitter incurred by CBR traffics in IP networks

In this paper, an analytic approximation is derived for the end-to-end delay-jitter incurred by a periodic traffic with constant packet size. The single node case is considered first. It is assumed that the periodic traffic is multiplexed with a background packet stream under the FCFS service discipline. The processes governing the packet arrivals and the packet sizes of the background traffic are assumed to be general renewal processes. A very simple analytical approximation is derived and its accuracy is assessed by means of event-driven simulations. This approximation is then extended to the multiple node case yielding a simple analytical approximation of the end-to-end jitter. This approximation is shown to be fairly accurate in the light to moderate traffic conditions typically encountered in IP core networks.     

Low-Power FPGA-Implementation of <Emphasis Type="Italic">atan</Emphasis>(<Emphasis Type="Italic">Y</Emphasis>/<Emphasis Type="Italic">X</Emphasis>) Using Look-Up Table Methods for Communication Applications

This paper presents an architecture for the computation of the atan(Y/X) operation suitable for broadband communication applications where a throughput of 20 MHz is required. The architecture takes advantage of embedded hard-cores of the FPGA device to achieve lower power consumption with respect to an atan(Y/X) operator based on CORDIC algorithm or conventional LUT-based methods. The proposed architecture can compute the atan(Y/X) with a latency of two clock cycles and its power consumption is 49% lower than a CORDIC or 46% lower than multipartite approach.

New op-amp-RC to G m -C transformation method

A new transformation method is proposed and used to transform op-amp-RC circuits to G _m -C ones with only grounded capacitors. The proposed method enables the generation of high-performance G _m -C filters that benefit from the advantages of good and well-known op-amp-RC structures and at the same time feature electronic tunability, high frequency capability and monolithic integration ability. An attractive feature of the proposed method is that it results in G _m -C structures with only grounded capacitors in spite of the presence of floating capacitors in the original op-amp-RC circuits. Ahmed M. Soliman was born in Cairo Egypt, on November 22, 1943. He received the B.Sc. degree with honors from Cairo University, Cairo, Egypt, in 1964, the M.S. and Ph.D. degrees from the University of Pittsburgh, Pittsburgh, PA, U.S.A., in 1967 and 1970, respectively, all in Electrical Engineering. He is currently Professor Electronics and Communications Engineering Department, Cairo University, Egypt. From September 1997–September 2003, Dr. Soliman served as Professor and Chairman Electronics and Communications Engineering Department, Cairo University, Egypt. From 1985–1987, Dr. Soliman served as Professor and Chairman of the Electrical Engineering Department, United Arab Emirates University, and from 1987–1991 he was the Associate Dean of Engineering at the same University. He has held visiting academic appointments at San Francisco State University, Florida Atlantic University and the American University in Cairo. He was a visiting scholar at Bochum University, Germany (Summer 1985) and with the Technical University of Wien, Austria (Summer 1987). In November 2005, Dr. Soliman gave a lecture at Nanyang Technological University, Singapore. Dr. Soliman was also invited to visit Taiwan and gave lectures at Chung Yuan Christian University and at National Central University of Taiwan. In 1977, Dr. Soliman was decorated with the First Class Science Medal, from the President of Egypt, for his services to the field of Engineering and Engineering Education. Dr. Soliman is a Member of the Editorial Board of the IEE Proceedings Circuits, Devices and Systems. Dr. Soliman is a Member of the Editorial Board of Analog Integrated Circuits and Signal Processing. Dr. Soliman served as Associate Editor of the IEEE Transactions on Circuits and Systems I (Analog Circuits and Filters) from December 2001 to December 2003 and is Associate Editor of the Journal of Circuits, Systems and Signal Processing from January 2004–Now.     

Construction of Time-Relaxed c-Broadcast Networks

C-broadcasting is an information dissemination task where a message, originated at any node in a network, is transmitted to all other nodes with the restriction that each node having the message can transmit it to almost c neighbors simultaneously. If the transmission time of the message is set to be one time unit, a minimal c-broadcast network (c-MBN) is a communication network in which c-broadcasting from any node can be accomplished in log _c+1 n time units, where n is the number of nodes and log _c+1 n is the fastest possible broadcast time. If networks are sparse, additional time units may be required to perform c-broadcasting. A time-relaxed c-broadcast network, denoted as (t,c)-RBN, is a network where c-broadcasting from any node can be completed in log _c+1 n+t time units. In this paper, a network compounding algorithm is proposed to construct large sparse (t,c)-RBNs by linking multiple copies of a time-relaxed network of small size using the structure of another time-relaxed network. Computational results are presented to show the effectiveness of the proposed algorithm.     

Stress in “cathodic” plasma oxides as a function of processing parameters

Stress in SiO₂ films grown via a “cathodic” plasma oxidation process has been examined as a function of growth and processing conditions. The total stress for oxides grown at 350° C in either 85% Ar/15%O₂ or 100% O₂ ambients at 700 W, 4 MHz, and a total pressure of 80 mTorr was found to be identical. It was observed that annealing these oxides for 24 hr at 700° C in an ultra-pure oxygen ambient did not have any effect on the electrical properties, but that the stress did increase slightly. Electrical properties were measured on MOS capacitors, specifically focusing on net fixed oxide charge and breakdown strength. In addition, both as-grown and annealed samples were subjected to 8.5 × 10⁶ rad(SiO₂) Al K_α ionizing radiation to simulate exposure to X-ray lithography. Notwithstanding the generation of a large areal density of net coulombic charge in the insulator, the presence of these defects did not cause a measurable change in the interfacial stress level. Surprisingly, it was found that about 16% of the wafers plastically deformed during oxide growth at 350° C and about 35% of the wafers were found to be deformed after annealing of the oxides at 700° C. Dry, thermal oxides grown at 700° C were seen to possess similar electrical properties but exhibited a higher stress than the plasma oxides.     

dV/dt对IPM中IGBT栅极电路的影响分析

The effect of dV/dt on the IGBT gate circuit in IPM is analyzed both by simulation and experiment.It is shown that a voltage slope applied across the collector-emitter terminals of the IGBT can induce a gate voltage spike through the feedback action of the parasitic capacitances of the IGBT.The dV/dt rate,gate-collector capacitance, gate-emitter capacitance and gate resistance have a direct influence on this voltage spike.The device with a higher dV/dt rate,gate-collector capacitance,gate resistance and lower gate-emitter capacitance is more prone to dV/dt induced self turn-on.By optimizing these parameters,the dV/dt induced voltage spike can be effectively controlled.     

Comparison of <Emphasis Type="Italic">p</Emphasis>-cycles and <Emphasis Type="Italic">p</Emphasis>-trees in a unified mathematical framework

As high-speed networks grow in capacity, network protection becomes increasingly important. Recently, following interest in p-cycle protection, the related concept of p-trees has also been studied. In one line of work, a so-called “hierarchical tree” approach is studied and compared to p-cycles on some points. Some of the qualitative conclusions drawn, however, apply only to p-cycle designs consisting of a single Hamiltonian p-cycle. There are other confounding factors in the comparison between the two, such as the fact that, while the tree-based approach is not 100% restorable, p-cycles are. The tree and p-cycle networks are also designed by highly dissimilar methods. In addition, the claims regarding hierarchical trees seem to contradict earlier work, which found pre-planned trees to be significantly less capacity-efficient than p-cycles. These contradictory findings need to be resolved; a correct understanding of how these two architectures rank in terms of capacity efficiency is a basic issue of network science in this field. We therefore revisit the question in a definitive and novel way in which a unified optimal design framework compares minimum capacity, 100% restorable p-tree and p-cycle network designs. Results confirm the significantly higher capacity efficiency of p-cycles. Supporting discussion provides intuitive appreciation of why this is so, and the unified design framework contributes a further theoretical appreciation of how pre-planned trees and pre-connected cycles are related. In a novel further experiment we use the common optimal design model to study p-cycle/p-tree hybrid designs. This experiment answers the question “To what extent can a selection of trees compliment a cycle-based design, or vice-versa?” The results demonstrate the intrinsic merit of cycles over trees for pre-planned protection.     

Comments on “Reliability and component importance of a consecutive-k-out-of-n system” by Zuo

Zuo claimed that the comparison of Birnbaum importance between two components for a consecutive-k-out-of-n:G system is the same as that for the F-system. We show that this is not the case and give a correct relation between the two systems.