共查询到17条相似文献,搜索用时 125 毫秒
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在玻璃衬底上利用磁控溅射法制备AZO/Cu/AZO多层薄膜,研究了溅射功率对AZO薄膜的微观结构和光电性能的影响。采用X射线衍射(XRD)仪、扫描电子显微镜(SEM)、紫外可见光谱仪(UVVis)等方法,对AZO薄膜的形貌结构、光电学性能进行了测试。结果表明:不同溅射功率下沉积的AZO薄膜均呈C轴择优取向,溅射功率对AZO/cu/AZO多层薄膜结构与光电性能有一定的影响。在溅射功率为120W、衬底温度为2500C、溅射气压为0.5Pa时薄膜的光透过率为75%,最低电阻率为2.2×10-4Ω·cm、结晶质量、表面形貌等得到明显改善。 相似文献
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采用脉冲激光沉积法制备了Al掺杂ZnO(AZO)薄膜, 研究了不同沉积氧压下薄膜的光电性能。当沉积压强为0.1 Pa时, AZO薄膜光电性能最优。将该薄膜用于GaN基LED透明电极作为电流扩展层, 在20 mA正向电流下观察到了520 nm处很强的芯片发光峰, 但芯片工作电压较高, 约为10 V, 芯片亮度随正向电流的增大而增强。二次离子质谱测试表明, AZO薄膜与GaN层界面处两种材料导电性能的变化以及钝化层的形成是导致芯片工作电压偏高的原因。 相似文献
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在室温下,采用射频磁控溅射技术以较大的功率密度(7W/cm^2)沉积了一系列掺铝氧化锌(AZO)透明导电薄膜,探索了溅射压强对沉积速率及薄膜性能的影响。结果表明,当工作压强为2.OPa时,高速(67nm/min)沉积得到的薄膜的电阻率为2.63×10^-3Ω·cm,可见光平均透过率为83%,并且在薄膜表面有一定的织构。 相似文献
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采用直流磁控溅射方法在玻璃衬底上室温生长了AZO/Cu双层薄膜,Cu层厚度控制在9nm,研究了AZO层厚度对薄膜电学和光学性能的影响。当AZO层厚度为20~80nm时,AZO/Cu双层薄膜具有良好的综合光电性能,方块电阻为12~14Ω/sq,可见光平均透过率为70~75%,品质因子为2×10-3~5×10-3Ω-1。AZO/Cu双层薄膜可以观察到Cu(111)和ZnO(002)的XRD衍射峰。通过退火研究表明,AZO/Cu双层薄膜的光电性能可在400℃下保持稳定,具有良好的热稳定性。本研究制备的透明导电AZO/Cu双层薄膜具有室温制程、综合光电性能良好、结晶性能较好、稳定性高的优点,可以广泛应用于光电器件透明电极及镀膜玻璃等领域。 相似文献
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以二水乙酸锌为原料,乙二醇甲醚和无水乙醇为溶剂,乙醇胺为稳定剂,六水合氯化铝为掺杂剂,合成AZO前驱液,采用自制的液位沉降装置在玻璃衬底上制备AZO薄膜,用XRD、UV—Vis、AFM、四探针、台阶仪等方法对薄膜进行表征,结果表明,应用液位沉降法制备AZO薄膜的优化条件为:溶胶浓度为0.5mol/L、Al3+/Zn2+浓度比为4at%、干燥温度100℃、干燥时间10min、预处理温度450℃、镀膜层数为20层、液位沉降速度为5cm/min、预处理时间为10min、550℃退火2h,得到薄膜透光率为88%,方块电阻为536Ω/□。 相似文献
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利用射频磁控溅射法,室温下通过交替溅射ZnO和Ag,在PET纤维基材上制备ZnO/Ag/ZnO纳米结构多层膜。运用扫描电镜和原子力显微镜对薄膜表面形貌进行分析,用分光光度计测试其透光性能,用四探针电阻测试仪测试其方块电阻。结果表明:纤维基Zno/Ag/ZnO多层膜致密、均匀,对紫外光表现为较强的吸收能力;Ag膜厚度的改变可以调控多层膜的光电性能;ZnO(40nm)/Ag(20nm)/ZnO(40m)多层膜呈现多晶结构,方块电阻为4.4Ω;透光率接近30%。 相似文献
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Fushan Li Yongzhi ZhangChaoxing Wu Zhixiao LinBeibei Zhang Tailiang Guo 《Vacuum》2012,86(12):1895-1897
Multilayer transparent electrode based on Al-doped zinc oxide (AZO)/Ag/Al-doped zinc oxide (AZO) was fabricated by sputtering, and a green organic light-emitting diode (OLED) device utilizing AZO/Ag/AZO as anode was fabricated. The AZO/Ag/AZO multilayer film exhibited superior square resistance and optical transmittance to those of commercial indium tin oxide (ITO). In comparison with the green OLEDs based on ITO and pure AZO anode, the green OLED based on AZO/Ag/AZO showed the highest light-emitting efficiency. The results indicate that AZO/Ag/AZO multilayer electrodes are a promising low-cost, low-toxic and low-temperature processing electrode scheme for OLED application. 相似文献
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铝掺杂氧化锌(AZO)废弃靶材回收再利用的研究 总被引:1,自引:1,他引:0
将AZO原料粉末和AZO残靶研磨后的粉末混合,采用注浆成型和常压大气烧结工艺制备靶材,实验主要测试了相对密度、吸水率、线收缩率和电阻率等性能,并通过XRD和SEM表征AZO靶材的晶体形态和微观结构,与新靶材进行性能对比,研究残靶粉末回收利用对靶材性能的影响。残靶粉末的加入对AZO靶材有轻微影响,测试结果显示烧结温度1450℃、保温5h、AZO残靶加入量为10%时有较好的性能:相对密度高达99.24%,吸水率和收缩率分别为17.96%和15.70%,电阻率为2.12×10-3Ω·cm。含有残靶的AZO靶材稍差的性能可能归结于AZO粉末和残靶粉末的兼容性。 相似文献
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Highly conducting tri-layer films consisting of a Cu layer sandwiched between Al-doped ZnO (AZO) layers (AZO/Cu/AZO) were prepared on glass substrates at room temperature by radio frequency (RF) magnetron sputtering of AZO and ion-beam sputtering of Cu. The tri-layer films have superior photoelectric properties compared with the bi-layer films (Cu/AZO, AZO/Cu) and single AZO films. The effect of AZO thickness on the properties of the tri-layer films was discussed. The X-ray diffraction spectra show that all films are polycrystalline consisting of a Cu layer with the cubic structure and two AZO layers with the ZnO hexagonal structure having a preferred orientation of (0 0 2) along the c-axis, and the crystallite size and the surface roughness increase simultaneously with the increase of AZO thickness. When the AZO thickness increases from 20 to 100 nm, the average transmittance increases initially and then decreases. When the fixed Cu thickness is 8 nm and the optimum AZO thickness of 40 nm was found, a resistivity of 7.92 × 10−5 Ω cm and an average transmittance of 84% in the wavelength range of visible spectrum of tri-layer films have been obtained. The merit figure (FTC) for revaluing transparent electrodes can reach to 1.94 × 10−2 Ω−1. 相似文献
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Effect of Cu layer thickness on the structural, optical and electrical properties of AZO/Cu/AZO tri-layer films 总被引:1,自引:0,他引:1
Highly conducting AZO/Cu/AZO tri-layer films were successfully deposited on glass substrates by RF magnetron sputtering of Al-doped ZnO (AZO) and ion-beam sputtering of Cu at room temperature. The microstructures of the AZO/Cu/AZO multilayer films were studied using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and atomic force microscope (AFM). X-Ray diffraction measurements indicate that the AZO layers in the tri-layer films are polycrystalline with the ZnO hexagonal structure and have a preferred orientation with the c-axis perpendicular to the substrates. With the increase of Cu thickness, the crystallinity of AZO and Cu layers is simultaneously improved. When the Cu thickness increases from 3 to 13 nm, the resistivity decreases initially and then varies little, and the average transmittance shows a first increase and then decreases. The maximum figure of merit achieved is 1.94 × 10−2 Ω−1 for a Cu thickness of 8 nm with a resistivity of 7.92 × 10−5 Ω cm and an average transmittance of 84%. 相似文献
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采用溶胶-凝胶旋涂法在普通载玻片衬底上制备出Al3 掺杂ZnO(AZO)薄膜.对所制备的薄膜在空气气氛中进行了不同温度(400~600℃)的退火处理,并在500℃下的不同气氛(氢气和氩气)中进行退火处理.利用XRD和SEM等分析手段对薄膜进行了表征,测定了薄膜的透光性.研究表明,随空气中退火温度的提高,ZnO薄膜(002)衍射峰强度得到增强,半高宽逐渐减小,透射率从85%提高到95%.薄膜晶粒尺寸范围为23.50~29.80 nm;在氢气和氩气气氛下退火得到的薄膜性能均优于在空气中退火得到的薄膜性能. 相似文献