Effect of S/In concentration ratio on the physical properties of AgInS2-sprayed thin films

 AgInS₂ thin films have been prepared on glass substrates by the spray pyrolysis process using an aqueous solution, containing silver acetate (AgCH₃CO₂), thiourea (SC(NH₂)₂) and indium chloride (InCl₃) as precursors. The depositions were carried out at the substrate temperature of 420 °C. The value of the concentration ratio in the spray solution of indium and silver elements x=[Ag⁺]/[In³⁺] was equal to 1.3, whereas y=[S²⁻]/[In³⁺] varied between 4 and 7. The structural study (XRD, EPMA and AFM ) shows that all films obtained using y=4 with a nearly stoichiometric composition consist essentially of AgInS₂ chalcopyrite compound and they exhibit in the as-deposited state, the best crystallinity with a (1 1 2) preferential orientation. On the other hand, films obtained using y higher than y=4 exhibit p-type character. Moreover, the optical analysis via the transmittance, reflectance reveals that the band-gap energy E_g increases slightly as a function of y composition (E_g varies from 1.87 to 2.07 eV).     

Photoluminescence studies of p-type chalcopyrite AgInS2:Sn

Chalcopyrite AgInS₂:Sn thin films were prepared by spray pyrolysis technique for a constant ratio of [Ag]/[In]=1.5 and different SnCl₄ concentrations (0.05, 0.1 and 0.2 ml) in the spray solution obtaining x=[SnCl₄]/[Ag]+[In]=0.01, 0.02, 0.04. All films were deposited at substrate temperature of 375 °C. The deposited film for which x=0.02 exhibited p-type conductivity, having band-gap energies of 1.87 and 2.01 eV. Photoluminescence (PL) studies reveal several PL bands located at 1.45, 1.68, 1.70, 1.80 and 1.88 eV at 10 K. Each one of these PL structures are related to different defects, the 1.45 eV emission is related to indium vacancies, 1.80 eV emission to interstitial silver (Ag_in) or Indium in sites of silver (Ag_In), whereas, the other emissions (1.70 and 1.88 eV) are related with a donor–acceptor pair recombination and free to bound transition, respectively, due to sulphur vacancies. Sn in excess modifies the emission bands located at 1.70 and 1.88 eV; we found that Sn reduces sulphur vacancies and PL spectra are dominated by acceptor impurities.     

Synthesis and photoelectrochemical characterization of (Ag2S)x(In2S3)1−x and AgInS2−ySey

Ternary n-type AgInS₂ and AgIn₅S₅ have been synthesized selectively by homogeneous precipitation from an aqueous solution containing the prescribed amounts of AgNO₃, In₂(SO₄)₃, Na₂S₂O₃ and CH₃COOH followed by heat treatments of the resulting precipitates at 500–800°C. Quaternary n-type AgInS_2−ySe_y semiconductors were also synthesized by sintering of a mixture of as-precipitated AgInS₂ and elemental Se. Photoelectrochemical characterization of these semiconductors was studied using the photoanodes prepared in the form of sintered pellets in a polysulfide electrolyte. Compared with the relatively poor saturated photocurrent for AgInS₂ (0.7 mA/cm²) and AgIn₅S₈ (0.01 mA/cm², AgInS_1.5Se_0.5 photoanode exhibits a higher photocurrent (20 mA/cm²) under 100 mW/cm² white-light illumination. This effect has been ascribed to the development of a highly oriented chalcopyrite crsytal during the sintering process at 800°C for 2 h. The chalcopyrite is a solid solution of AgInS₂ and AgInSe₂ and has band gaps between those of AgInS₂ and AgInSe₂. An energy conversion efficiency of 0.55%, a fill factor of 0.40, and a V_oc of 0.23 V has been obtained for the oriented quarternary photoanode.     

Water incorporation and proton conductivity in titanium substituted barium indate

Water uptake in the perovskite-like oxygen deficient compounds Ba₂(In_1−xTi_x)₂O_5+x□_1−x (0 ≤ x < 0.7) (called BITx) was investigated by thermal gravimetric analysis (TGA) at equilibrium conditions and thermodynamic data of the hydration process were extracted. The change of the lattice volume upon hydration, inferred from X-ray diffraction data, appears as an important parameter for the characterization of perovskite-type proton conductors. The proton conductivity, the transport number and the proton diffusion coefficients for BITx compounds were determined from conductivity measurements performed under wet and dry atmosphere. The conductivity of Ba₂(In_1−xTi_x)₂O_5+x□_1−x compounds is mainly protonic up to 450 °C and the best level of proton conductivity was obtained for BIT02 with a value of 1.1 × 10⁻³ S cm⁻¹ at 450 °C.     

Enhanced performance of solid oxide fuel cells with Ni/CeO2 modified La0.75Sr0.25Cr0.5Mn0.5O3−δ anodes

The optimization of electrodes for solid oxide fuel cells (SOFCs) has been achieved via a wet impregnation method. Pure La_0.75Sr_0.25Cr_0.5Mn_0.5O_3−δ (LSCrM) anodes are modified using Ni(NO₃)₂ and/or Ce(NO₃)₃/(Sm,Ce)(NO₃)_x solution. Several yttria-stabilized zirconia (YSZ) electrolyte-supported fuel cells are tested to clarify the contribution of Ni and/or CeO₂ to the cell performance. For the cell using pure-LSCrM anodes, the maximum power density (P_max) at 850 °C is 198 mW cm⁻² when dry H₂ and air are used as the fuel and oxidant, respectively. When H₂ is changed to CH₄, the value of P_max is 32 mW cm⁻². After 8.9 wt.% Ni and 5.8 wt.% CeO₂ are introduced into the LSCrM anode, the cell exhibits increased values of P_max 432, 681, 948 and 1135 mW cm⁻² at 700, 750, 800 and 850 °C, respectively, with dry H₂ as fuel and air as oxidant. When O₂ at 50 mL min⁻¹ is used as the oxidant, the value of P_max increases to 1450 mW cm⁻² at 850 °C. When dry CH₄ is used as fuel and air as oxidant, the values of P_max reach 95, 197, 421 and 645 mW cm⁻² at 750, 800, 850 and 900 °C, respectively. The introduction of Ni greatly improves the performance of the LSCrM anode but does not cause any carbon deposit.     

Preparation of In2O3:F thin films grown by spray pyrolysis technique

Transparent conducting fluorine doped indium oxide (In₂O₃:F) thin films have been deposited on Corning 7059 glass substrates by the spray pyrolysis technique. The structural, electrical, and optical properties of these films were investigated as a function of substrate temperature. The X-ray diffraction pattern of the films deposited at lower substrate temperature (T_s=300 °C) showed no peaks of In₂O₃:F. In the useful range for deposition (i.e. 425–600 °C), the orientation of the films was predominantly [400]. For the 4500 Å thick In₂O₃:F deposited with an F content of 10-wt%, the minimum sheet resistance was 120 Ω and average transmission in the visible wavelength rang (400–700 nm) was 88%.     

An investigation into effect of cationic precursor solutions on formation of CuInSe2 thin films by SILAR method

SILAR deposition of CuInSe₂ films was performed by using Cu²⁺–TEAH₃ (cupric chloride and triethanolamine) and In³⁺–CitNa (indium chloride and sodium citrate) chelating solutions with weak basic pH as well as Na₂SeSO₃ solution at 70 °C. A separate mode and a mixed one of cationic precursor solutions were adopted to investigate effects of the immersion programs on crystallization, composition and morphology of the deposited CuInSe₂ films. Chelating chemistry in two solution modes was deducted based on IR measurement. The XRD, XPS and SEM results showed that well-crystallized, smoothly and distinctly particular CuInSe₂ films could be obtained after annealing in Ar at 400 °C for 1 h by using the mixed cationic solution mode.     

Semiconductor-sensitized solar cells based on nanocrystalline In2S3/In2O3 thin film electrodes

A possibility of semiconductor-sensitized thin film solar cells have been proposed. Nanocrystalline In₂S₃-modified In₂O₃ electrodes were prepared with sulfidation of In₂O₃ thin film electrodes under H₂S atmosphere. The band gap (E_g) of In₂S₃ estimated from the onset of the absorption spectrum was approximately 2.0 eV. The photovoltaic properties of a photoelectrochemical solar cell based on In₂S₃/In₂O₃ thin film electrodes and I⁻/I₃⁻ redox electrolytes were investigated. This photoelectrochemical cell could convert visible light of 400–700 nm to electron. A highly efficient incident photon-to-electron conversion efficiency (IPCE) of 33% was obtained at 410 nm. The solar energy conversion efficiency, η, under AM 1.5 (100 mW cm⁻²) was 0.31% with a short-circuit photocurrent density (J_sc) of 3.10 mA cm⁻², a open-circuit photovoltage (V_oc) of 0.26 V, and a fill factor ( ff ) of 0.38.     

Synthesis and assessment of La0.8Sr0.2ScyMn1−yO3−δ as cathodes for solid-oxide fuel cells on scandium-stabilized zirconia electrolyte

Perovskite-type La_0.8Sr_0.2Sc_yMn_1−yO_3−δ oxides (LSSMy, y = 0.0–0.2) were synthesized and investigated as cathodes for solid-oxide fuel cells (SOFCs) containing a stabilized zirconia electrolyte. The introduction of Sc³⁺ into the B-site of La_0.8Sr_0.2MnO_3−δ (LSM) led to a decrease in the oxides’ thermal expansion coefficients and electrical conductivities. Among the various LSSMy oxides tested, LSSM0.05 possessed the smallest area-specific cathodic polarization resistance, as a result of the suppressive effect of Sc³⁺ on surface SrO segregation and the optimization of the concentration of surface oxygen vacancies. At 850 °C, it was only 0.094 Ω cm² after a current passage of 400 mA cm⁻² for 30 min, significantly lower than that of LSM (0.25 Ω cm²). An anode-supported cell with a LSSM0.05 cathode demonstrated a peak power density of 1300 mW cm⁻² at 850 °C. The corresponding value for the cell with LSM cathode was 450 mW cm⁻² under the same conditions. The LSSM0.05 oxide may potentially be a good cathode material for IT-SOFCs containing doped zirconia electrolytes.     

Pyrite (FeS2) thin films prepared by spray method using FeSO4 and (NH4)2Sx

A simple spray method for the preparation of pyrite (FeS₂) thin films has been studied using FeSO₄ and (NH₄)₂S_x as precursors for Fe and S, respectively. Aqueous solutions of these precursors are sprayed alternately onto a substrate heated up to 120°C. Although Fe–S compounds including pyrite are formed on the substrate by the spraying, sulfurization of deposited films is needed to convert other phases such as FeS or marcasite into pyrite. A single-phase pyrite film is obtained after the sulfurization in a H₂S atmosphere at around 500°C for 30 min. All pyrite films prepared show p-type conduction. They have a carrier concentration (p) in the range 10¹⁶–10²⁰ cm⁻³ and a Hall mobility (μ_H) in the range 200–1 cm²/V s. The best electrical properties (p=7×10¹⁶ cm⁻³, μ_H=210 cm²/V s) for a pyrite film prepared here show the excellence of this method. The use of a lower concentration FeSO₄ solution is found to enhance grain growth of pyrite crystals and also to improve electrical properties of pyrite films.     

Enhanced photocatalytic hydrogen production over In-rich (Ag–In–Zn)S particles

The ratio of ZnS to AgInS₂ is usually adjusted to tune the band gaps of this quaternary (Ag–In–Zn)S semiconductor to increase photocatalytic activity. In this study, the [Zn]/[Ag] ratio was kept constant. The hydrogen production rate was enhanced by increasing the content of indium sulfide. Compared to the steady H₂ evolution rate obtained with equal moles of indium and silver ([In]/[Ag] = 1, 0.64 L/m² h), that obtained with In-rich photocatalyst ([In]/[Ag] = 2, 3.75 L/m² h) is over 5.86 times higher. The number of nanostep structures, on which the Pt cocatalysts were loaded by photodeposition, increased with the content of indium. The indium-rich samples did not induce phase separation between Ag_xIn_xZn_yS_2x+y and AgIn₅S₈, instead forming a single-phase solid solution. Although the photocatalytic activity decreased slightly for bare In-rich photocatalysts, Pt loading played a critical role in the hydrogen production rate. This study demonstrates the significant effect of In₂S₃ on this unique (Ag–In–Zn)S photocatalyst.     

Three-stage growth of Cu–In–Se polycrystalline thin films by chemical spray pyrolysis

Structural, optical and electrical properties of polycrystalline Cu–In–Se films, such as CuInSe₂ and ordered vacancy compounds (OVC), prepared by three-stage process of sequential chemical spray pyrolysis (CSP) of In–Se (first stage), Cu–Se (second stage) and In–Se (third stage) solutions have been studied in terms of substrate temperature at the second stage (T_S2). The films grown at T_S2420 °C exhibited larger grains in comparison with the Cu–In–Se films grown by the usual CSP method. Optical gap energy was approximately 1.06 eV for 360 °CT_S2420 °C, but increased dramatically from 1.06 to 1.35 eV when the T_S2 rose from 420 to 500 °C. Conductivity type was p-type for T_S2<420 °C, but n-type for T_S2>420 °C.     

The electro-optical properties of amorphous indium tin oxide films prepared at room temperature by pulsed laser deposition

The electrical and optical properties of pulsed laser deposited amorphous indium tin oxide films at room temperature are discussed. The films were grown from indium oxide (In₂O₃) targets of different tin (Sn) doping content (0, 5 and 10 wt%) at different oxygen pressures (P_O2) ranging from 1×10⁻³ to 5×10⁻² Torr. The electrical and optical properties of the films were examined by Hall measurements and optical spectrophotometry. It was found that high conductivity amorphous films could be prepared at room temperature irrespective of the Sn doping content. The properties of these films deposited from 0, 5, 10 wt% Sn-doped In₂O₃ targets show a similar response to changes in P_O2. The maximal conductivity of (4.0, 2.1 and 1.8)×10³ S/cm and optical transmittance (visible) higher than 90% were obtained at P_O2 region of (1–1.5)×10⁻² Torr. An undoped In₂O₃ film produced the highest conductivity of 4×10³ S/cm in these studies.     

Study of electron-beam evaporated Sn-doped In2O3 films

Electron beam evaporated Sn-doped In₂O₃ films have been prepared from the starting material with composition of (1 − x) In₂O₃ − -x SnO₂, where x = 0.0, 0.010, 0.025, 0.050, 0.090, and 0.120. X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and X-ray diffraction analysis were carried out on the films. Luminous transmittance and electrical resistivity of the films, show weak dependence on x. The composition of the film ([Sn]/[In] atomic ratio) was found to differ from that of the starting material. In fact, the atomic ratio was higher in the film than in the starting material by a factor which increases with x (ranging from 1.0 to 2.6). There is a relatively broad resistivity minimum in the layer atomic ratio range Sn/In = 0.06 − -0.09. These results compare well with those reported in the literature for Sn-doped In₂O₃ films, prepared by pyrolitic (spray) method.     

Bulk p-CuInSe2 photo-electrochemical solar cells

Dense CuInSe₂ of high quality, prepared by the fusion technique in evacuated quartz ampoule from stoichiometric melt, crystallizes in the chalcopyrite structure. Compositional analysis carried out by secondary ion mass spectrometry (SIMS) and energy dispersive spectroscopy (EDS) indicates a uniform distribution of elements through the depth and a composition close to the stoichiometry. The diffuse reflectance spectrum gives a band gap at 0.94 eV. The electrical conductivity follows an Arrhenius-type law with activation energy of 23 meV in conformity with polarons hopping. Above 320 °C, CuInSe₂ undergoes an irreversible oxidation. The thermal variation of the thermopower indicates p-type behavior attributed to copper deficiency and a hole mobility μ_300 K of 0.133 cm² V⁻¹ s⁻¹, thermally activated. In KCl media, the compound exhibits an excellent chemical stability with a corrosion rate of 8 μmol cm⁻² month⁻¹. The photo-electrochemical properties, investigated for the first time on the ingots, confirm the p-type conductivity. From the capacitance measurements, the flat band potential (V_fb=−0.62V_SCE) and the holes density (N_A=4×10¹⁷ cm⁻³) were determined. The valence band, located at 4.43 eV below vacuum, is made up of mainly Se orbital with little admixture of Cu character. The change of the electrolyte causes a variation in the potential V_fb (dV_fb/dpH=−0.058 V pH⁻¹) indicating strong OH⁻ adsorption. The fill factor in S²⁻ media was found to be 0.54; such result was corroborated by semi-logarithmic plots.     

Fabrication of CuInSe2 films and solar cells by the sequential evaporation of In2Se3 and Cu2Se binary compounds

Cu₂Se/In_xSe(x≈1) double layers were prepared by sequentially evaporating In₂Se₃ and Cu₂Se binary compounds at room temperature on glass or Mo-coated glass substrates and CuInSe₂ films were formed by annealing them in a Se atmosphere at 550°C in the same vacuum chamber. The In_xSe thickness was fixed at 1 μm and the Cu₂Se thickness was varied from 0.2 to 0.5 μm. The CuInSe₂ films were single phase and the compositions were Cu-rich when the Cu₂Se thickness was above 0.35 μm. And then, a thin CuIn₃Se₅ layer was formed on the top of the CuInSe₂ film by co-evaporating In₂Se₃ and Se at 550°C. When the thickness of CuIn₃Se₅ layer was about 150 nm, the CuInSe₂ cell showed the active area efficiency of 5.4% with V_oc=286 mV, J_sc=36 mA/cm² and FF=0.52. As the CuIn₃Se₅ thickness increased further, the efficiency decreased.     

ZnO-doped BaZr0.85Y0.15O3−δ proton-conducting electrolytes: Characterization and fabrication of thin films

ZnO-doped BaZr_0.85Y_0.15O_3−δ perovskite oxide sintered at 1500 °C has bulk conductivity of the order of 10⁻² S cm⁻¹ above 650 °C, which makes it an attractive proton-conducting electrolyte for intermediate-temperature solid oxide fuel cells. The structure, morphology and electrical conductivity of the electrolyte vary with sintering temperature. Optimal electrochemical performance is achieved when the sintering temperature is about 1500 °C. Cathode-supported electrolyte assemblies were prepared using spin coating technique. Thin film electrolytes were shown to be dense using SEM and EDX analyses.     

Stable, easily sintered BaCe0.5Zr0.3Y0.16Zn0.04O3−δ electrolyte-based protonic ceramic membrane fuel cells with Ba0.5Sr0.5Zn0.2Fe0.8O3−δ perovskite cathode

A stable, easily sintered perovskite oxide BaCe_0.5Zr_0.3Y_0.16Zn_0.04O_3−δ (BCZYZn) as an electrolyte for protonic ceramic membrane fuel cells (PCMFCs) with Ba_0.5Sr_0.5Zn_0.2Fe_0.8O_3−δ (BSZF) perovskite cathode was investigated. The BCZYZn perovskite electrolyte synthesized by a modified Pechini method exhibited higher sinterability and reached 97.4% relative density at 1200 °C for 5 h in air, which is about 200 °C lower than that without Zn dopant. By fabricating thin membrane BCZYZn electrolyte (about 30 μm in thickness) on NiO–BCZYZn anode support, PCMFCs were assembled and tested by selecting stable BSZF perovskite cathode. An open-circuit potential of 1.00 V, a maximum power density of 236 mW cm⁻², and a low polarization resistance of the electrodes of 0.17 Ω cm² were achieved at 700 °C. This investigation indicated that proton conducting electrolyte BCZYZn with BSZF perovskite cathode is a promising material system for the next generation solid oxide fuel cells.     

Structural and transport evolution in the LixAg2V4O11 system

We investigated the effect of inserting lithium into Ag₂V₄O₁₁ (-SVO) on the structure, electronic properties and redox committed by combining in situ XRD measurements, ESR spectroscopy and 4 probes DC conductivity coupled with thermopower measurements. The electrochemical discharge occurs in three consecutive steps above 2 V (vs. Li⁺/Li). The first one, between 0 < x < 0.7 in Li_x-SVO, has been ascribed to the V⁵⁺ reduction through a solid solution mechanism. This reduction competes with a Li⁺/Ag⁺ displacement reaction which leads to a structural collapse owing to the ionic radii mismatch between the withdrawn Ag⁺ and the inserted Li⁺. The silver reduction progresses continuously with two different slopes along two composition–potential plateaus at 2.81 V and 2.55 V. Finally, the reduction continues until we obtain an amorphous structure with V⁴⁺ and a of V³⁺. Although, the silver re-enters the structure during the subsequent recharge, the original structure is not recovered. The reduction of silver forming silver metal nano-clusters acts to increase the electronic conductivity from 3.8 × 10⁻⁵ S cm⁻¹ to 1.4 × 10⁻³ S cm⁻¹. In complement to this study, we also report on a low temperature hydro-(solvo)-thermal approach using HF_(aq) as a mineralizer, which enables the synthesis of nano-sized -SVO particles that exhibit superior electrochemical performances compared to conventional particles synthesized by solid-state reaction.     

Co-free, iron perovskites as cathode materials for intermediate-temperature solid oxide fuel cells

We have developed a Co-free solid oxide fuel cell (SOFC) based upon Fe mixed oxides that gives an extraordinary performance in test-cells with H₂ as fuel. As cathode material, the perovskite Sr_0.9K_0.1FeO_3−δ (SKFO) has been selected since it has an excellent ionic and electronic conductivity and long-term stability under oxidizing conditions; the characterization of this material included X-ray diffraction (XRD), thermal analysis, scanning microscopy and conductivity measurements. The electrodes were supported on a 300-μm thick pellet of the electrolyte La_0.8Sr_0.2Ga_0.83Mg_0.17O_3−δ (LSGM) with Sr₂MgMoO₆ as the anode and SKFO as the cathode. The test cells gave a maximum power density of 680 mW cm⁻² at 800°C and 850 mW cm⁻² at 850 °C, with pure H₂ as fuel. The electronic conductivity shows a change of regime at T ≈ 350 °C that could correspond to the phase transition from tetragonal to cubic symmetry. The high-temperature regime is characterized by a metallic-like behavior. At 800 °C the crystal structure contains 0.20(1) oxygen vacancies per formula unit randomly distributed over the oxygen sites (if a cubic symmetry is assumed). The presence of disordered vacancies could account, by itself, for the oxide-ion conductivity that is required for the mass transport across the cathode. The result is a competitive cathode material containing no cobalt that meets the target for the intermediate-temperature SOFC.