电容器用铝箔阳极氧化膜的改性研究

阳极氧化膜是电解电容器的工作介质,其质量的优劣直接影响着铝电解电容器的性能。形成前将腐蚀箔在约７５℃左右的Ａ溶液（约０．２ｍｏｌ／Ｌ）中浸泡约１０ｍｉｎ,然后在５７０℃左右热处理３ｈ,阳极氧化膜的结构与性能会得到极大改善,铝箔比容可提高２５－５０％,形成电量降低３０－５０％,从而可有效提高形成效率。     

铝箔表面复合阳极氧化膜研究

采用溶液浸渍法在低压腐蚀铝箔表面沉积一层Ti氧化物．然后将试样在有机盐水溶液中阳极氧化至20．0V。在恒流升压过程中,记录电压-时间曲线。借助XPS和XRD等分析手段分析阳极氧化膜结构,并对复合阳极氧化膜的生长机理进行了探讨。结果表明：含Ti处理液浸渍处理后,试样阳极氧化的电压-时间曲线斜率显著增大,阳极氧化膜是由Al2O3和TiO2构成的复合阳极氧化膜,其介电常数高于Al2O3阳极氧化膜,使阳极箔比容提高24．8％。     

铝电解电容器用高介电常数复合氧化膜的制备

用水解沉积-阳极氧化法制备高介电常数的Al-Ti复合氧化膜,通过XPS分析Al-Ti复合氧化膜的成分及各元素的相对含量.监测铝电极箔恒电流阳极氧化过程中的升压曲线,对复合氧化膜的介电常数进行理论计算,并测试铝电解电容器的容量及耐久性.结果表明:铝电极箔在含钛无机盐溶液中的最佳处理时间为10min,处理后的铝电极箔阳极氧化速率高于纯铝电极箔,Al-Ti复合氧化膜中的高介电常数相为TiO2.对16V/1000μF规格的铝电解电容器,形成Al-Ti复合氧化膜的样品,容量提高率为23%,且耐久性良好,复合氧化膜介电常数的理论计算值与实验结果较为一致.     

铝阳极氧化机理研究的进展

综述了铝阳极氧化膜的结构、形态与介质的关系有孔洞形成的原因。     

铝阳极氧化膜膜孔微观结构研究

用ＳＥＭ展示硫酸、草酸、铬酸膜的表面、截面的微观膜孔结构，比较其表面、截面的膜孔直径、膜孔密度及膜孔排列形态，分析膜孔在成膜过程中的变化。     

钛阳极氧化膜的着色研究

TA2型纯钛植入材料在葡萄糖酸钠电解液中阳极氧化可得到丰富的色彩,增强了钛植入体的美观性和功能性.分析表明:工艺参数对氧化膜质量有着重要的影响.电压是影响膜层色彩的最主要的因素,颜色随着电压的变化而发生规律性的改变.经X射线衍射分析,纯钛表面经阳极氧化处理后,其表面生成了一层非晶态的氧化钛薄膜,并且钛晶体的各个表面沿不同结晶方向的腐蚀速率不相同.通过对氧化膜层显微观察和耐蚀性研究,证明阳极氧化及热处理可大大提高钛氧化膜在模拟体液中的热力学稳定性和耐蚀性,且适当的热处理可使非晶态的钛氧化膜转化为稳定的二氧化钛.     

铝阳极氧化膜低温封闭剂

对Ｎｉ－Ｆ体系低温封闭进行了研究,确定了满足产品最佳封闭质量的ＮＩＦ２溶液封闭剂的工艺条件,并且可根据生产实际使用过程中封闭污染情况,在原封闭基础上添适当组分调整使封闭液正常工作,铝阳极氧化膜经封闭后符合ＩＳＯ ３２１０标准。１试验 （１）铝阳极化试验选取 ０．５ｄｍ~２１２号硬铝材料,常规预处理后,进行硫酸阳极化,膜厚 １０～２０ μｍ。 （２）纯ＮｉＦ２溶液的配制用去离子水配制 ３ ｇ／Ｌ ＮｉＦ２· ４Ｈ２Ｏ溶液。 （３）封闭液Ｎｉ２＋的测定用移液管吸取冷封液 １５ ｍｌ,加水５０～ １００ｍｌ;如 １０…     

钛阳极氧化制备TiO2-PTFE复合氧化膜及其微观特征

探讨了在不同电流、电解液浓度下,对钛表面进行阳极氧化所制得的氧化膜的结构与工艺参数之间的关系.然后,在硫酸电解液中添加聚四氟乙烯(PTFE)乳液,从而在钛表面制备TiO2-PTFE复合薄膜.用X射线光电子能谱(XPS)、扫描电镜(SEM)等对薄膜的微观特征进行表征.扫描电镜结果显示,所获得的氧化物为多孔结构薄膜,孔径为200～300nm,有利于电解液中超细颗粒的填充.添加PTFE乳液后,钛阳极氧化膜的孔隙部分或全部被PTFE微粒填充. XPS分析结果表明氧化膜内含有F元素.     

阳极氧化铝作为铝电解电容器阳极箔用的研究

采用直流电阳极氧化法在高纯铝箔上制备了多孔阳极氧化铝(AAO)膜,同时采用扫描电子显微镜(SEM)、循环伏安(CV)和电化学阻杭谱(EIS)等技术对AAO膜的表面形貌、厚度和比表面电容性质等进行了表征.结果表明,AAO膜由垂直于膜表面的、孔径在60～80nm之间的平行纳米孔道组成,膜的多孔层厚度约为20μm左右;AAO...     

SrTiO3复合氧化膜对铝阳极箔比容的影响

用柠檬酸盐溶液浸渍沉积法在腐蚀铝箔上制备出SrTiO3-Al2O3复合氧化膜,研究了处理液中Ti和Sr离子浓度与柠檬酸含量、浸渍处理时间、退火温度以及退火时间对铝箔比容的影响.实验结果表明最佳工艺参数为:处理液中Ti和Sr离子浓度分别为3×10-3mol/L,浸渍时间为10分钟,退火温度在550℃、退火时间为1小时.另外,实验结果也表明,处理液中柠檬酸含量对比容的影响不大.使用该工艺,可使腐蚀铝箔的比容提高15%.该复合膜有希望用作电解电容器的电介质.     

水解沉积--阳极氧化法形成Al-Ti复合氧化膜

通过含钛无机盐的水解沉积及高温热处理,铝电极箔表面形成高介电常数氧化物———TiO2 膜层,然后在己二酸铵溶液中恒电流阳极氧化,形成 Al Ti复合氧化膜。AFM观测了含钛无机盐水解沉积过程中,铝电极箔表面形貌的变化。在铬酸和磷酸的混合溶液中测试了氧化膜的耐电压随溶解时间的变化。通过SIMS检测了复合氧化膜中 Al3 、Ti4 的强度随溅射时间的变化。膜溶解试验及 SIMS 检测结果表明Al Ti复合氧化膜由 3 层组成,外层和中间层为 Al、Ti、O不同配比的混合物,内层则为纯的 Al2O3。铝电极箔比容随氧化膜耐电压的变化关系曲线表明,60V耐电压下,Al Ti复合氧化膜的比容提高率为51%。     

高纯铝阳极氧化膜的电化学行为研究

为考察氧化膜状态对其电化学性能的影响,采用电化学方法研究了高纯铝阳极氧化膜在磷酸二氢钠缓冲溶液中的电化学性能.测试结果表明,高纯铝氧化膜的阴极极化过程分为3个阶段:1)电流密度变化较小而电位迅速负移,系克服氧化膜阻挡层电阻阶段;2)电流密度迅速增大而电位变化较小的析氢阶段;3)电流密度变化较小而电位迅速负移的氢离子扩散...     

Effects of the hydrogen content on the development of anodic aluminum oxide film on pure aluminum

In this study, high purity aluminum (Al) samples containing different levels of hydrogen were used as a base metal for anodization. To ensure constant current densities during the experiments, the voltage-time (V-t) curves were recorded. The differential ΔV/Δt curves were plotted and the energy consumed during different steps of anodization was calculated. Experimental observations show that differences in the hydrogen content affected the amount of energy consumed. The process was divided into three steps.When the voltage response at the end of step 2 exceeded 25 V, the energy consumed in steps 2 + 3 reached or exceeded 7.4 J/cm², and the pore channels branched or merged, creating a spike in the ΔV/Δt curves in step 3. A combination of the effects of the high voltage response at the end of step 2 and the high hydrogen content in the Al samples led to the formation of an anodic aluminum oxide (AAO) film in the sulfuric acid solution, which produced crystallized boehmite. This study proposes a unique tool for understanding certain special anodic behaviors of pure Al, wherein the branching or merging of pore channels and the partial crystallization of the AAO film can be ascertained by looking at the irregularities in the ΔV/Δt curves obtained in step 3.     

铝阳极氧化膜纳米孔阵列的微细结构

用电化学阳极氧化法制备了纳米多孔铝阳极氧化膜(AAO模板).采用原子力显微镜(AFM)测试AAO膜,研究了纳米孔阵列的形成机制.结果表明,在AAO膜的表面,除存在六方形的纳米孔阵列外,在孔端还存在六个微小的隆起,相邻的隆起之间彼此相连,看上去酷似一朵盛开的梅花,花的中心就是六方形纳米孔.二维AFM图像显示,以往用扫描电镜表征的纳米孔阵列,实际上是一幅排列整齐、并呈周期性变化的梅花阵列图案.膜背面阻挡层的AFM二维图像表明,膜胞呈六方形,且排列高度有序.膜胞密度为4.3×109/cm2,与孔密度基本一致.阻挡层的三维照片显示,膜胞的底部存在半球状突起,也呈现出规整的阵列图案.     

Thinning anodic aluminum oxide films and investigating their optical properties

In this study, we propose the determination of the dissolution rate of anodic aluminum oxide barrier layer, using a new, simple electrochemical setup and the transmission spectrum of alumina, recorded before and after several successive partial removals of barrier layer of the thin film. By dissolving the barrier layer and then thinning the alumina membrane, some changes appear in the optical transmission spectrum, in both experimental and calculated examples, which provide us information on the dissolution rate of alumina barrier layer.     

Effect of oxygen plasma treatment on low dielectric constant carbon-doped silicon oxide thin films

Low dielectric constant (low k) carbon-doped silicon oxide (CDO) films are obtained by plasma-enhanced chemical vapor deposition. The k value of the as-deposited CDO film is less than 2.9. However, the k value may be changed during the integration process. In integration process, photoresist removal is commonly implemented with oxygen plasma ashing or by wet chemical stripping. In this work, the impact of oxygen plasma treatment has been investigated on the quality of the low-k CDO films. Different plasma treatment conditions, including variable pressure, r.f. power, and treatment time were employed. A variety of techniques, including X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy, time-of-flight secondary ion mass spectrometry (TOF-SIMS), atomic force microscopy (AFM), and scanning electron microscope (SEM) were used to analyze the effect of the oxygen plasma post-treatment on the low-k CDO films. The result indicates that oxygen plasma will damage the CDO film by removing the entire carbon content in the upper part of the film with increasing treatment time, which results in an increase in the k value and film thickness loss. Our result also confirms that with low r.f. power and low pressure, the damage will be less.