High density plasma treatment of polyimide substrate to improve structural and electrical properties of Ga-doped ZnO films

We investigated the effects of a high density O₂ plasma treatment on the structural and electrical properties of sputter-deposited GZO films. The GZO films were deposited on polyimide substrate without substrate heating by RF magnetron sputtering from a ZnO target mixed with 5 wt.% Ga₂O₃. Prior to the GZO film growth, we treated a polyimide substrate with highly dense inductively coupled oxygen plasma. The optical transmittance of the GZO film, about 80%, was maintained regardless of the plasma pre-treatment. However, the resistivity of the film was strongly influenced by the plasma pre-treatment. The resistivity of the GZO film decreased from 1.02 × 10^− 2 Ω cm without an O₂ plasma pre-treatment to 1.89 × 10^− 3 Ω cm with an O₂ plasma pre-treatment.     

Deposition of low-resistivity gallium-doped zinc oxide films by low-temperature radio-frequency magnetron sputtering

The transparent and conductive gallium-doped zinc oxide (GZO) film was deposited on 1737F Corning glass using the radio-frequency (RF) magnetron sputtering system with a GZO ceramic target. (The Ga₂O₃ contents are approximately 5 wt. %). In this study, the effect of the sputtering pressure on the structural, optical and electrical properties of GZO films upon the glass or polyester film (PET) substrate was investigated and discussed in detail. The GZO film was grown under a steady RF power of 400 W and a lower substrate temperature from room temperature up to 200 °C. The crystal structure and orientation of GZO thin films were examined by X-ray diffraction. All of the GZO films under various sputtering pressures had strong c-axis (002)-preferred orientation. Optical transparency was high (> 80%) over a wide spectral range from 380 nm to 900 nm. According to the experimental data, the resistivity of a single-layered GZO film was optimized at  8.3 × 10^− 4 Ω cm and significantly influenced by the sputtering pressure. In further research, the sandwich structure of the GZO film/Au metal/GZO film was demonstrated to improve the electrical properties of the single-layered GZO film. The resistivity of the sandwich-structured GZO film was around 2.8 × 10^− 4 Ω cm.     

Chemical deposition of Al2O3 thin films on Si substrates

Uniform Al₂O₃ films were deposited on silicon substrates by the sol–gel process from stable coating solutions. The technological procedure includes spin coating deposition and investigating the influence of the annealing temperature on the dielectric properties. The layers were studied by Fourier transform infrared spectroscopy and Scanning Electron Spectroscopy. The electrical measurements have been carried out on metal–insulator–semiconductor (MIS) structures. The C–V curves show a negative fixed charge at the interface and density of the interface state, Dit, 3.7 × 10¹¹ eV^− 1cm^− 2 for annealing temperature at 750 °C.     

Growth and optical characterizations of (Ba0.32Sr0.68)5Nb4O15 crystal

(Ba_0.32Sr_0.68)₅Nb₄O₁₅ crystal with sizes of Ø 17 × 35 mm was grown successfully by Czochralski technique method. The thermal anisotropy was discussed. The principal coefficients of thermal expansion along (100), (010), (001) directions were precisely measured to be 1.308 × 10^− 5, 1.288 × 10^− 5, 1.478 × 10^− 5 K^− 1, respectively. Its optical transparency range has been measured and found to span from 323 to 5500 nm. The bands present in the IR spectra were identified and assigned to the corresponding vibration modes of NbO₆ anions.     

Microstructures and thermoelectric properties of p-type pseudo-binary AgxBi0.5Sb1.5−xTe3 (x = 0.05–0.4) alloys prepared by cold pressing

The p-type pseudo-binary Ag_xBi_0.5Sb_1.5−xTe₃ (x = 0.05–0.4) alloys were prepared by cold pressing. The thermal conductivities (κ) were calculated from the values of heat capacities, densities and thermal diffusivities measured, and range approximately from 0.66 to 0.56 (W K^− 1 m^− 1) for the Ag_xBi_0.5Sb_1.5−xTe₃ alloy with molar fraction x being 0.4. Combining with the electrical properties obtained in the previous study, the maximum dimensionless figure of merit ZT of 1.1 was obtained at the temperature of 558 K.     

Chemical solution deposition of YBa2Cu3O7−x coated conductors

At present, the development of superconducting YBa₂Cu₃O_7−x coated conductors attracts much attention due to their enormous application potential in electric power systems. Worldwide research is focused on the investigation and improvement of buffer materials and YBa₂Cu₃O_7−x superconducting properties as well as low-cost manufacturing processes in cooperation with industrial companies. Accordingly, chemical solution deposition has emerged as a highly competitive, versatile, and cost-effective technique for fabricating coated conductors of high performance. New chemical solution approaches are under development for buffer layer deposition. In order to achieve high critical current carrying YBa₂Cu₃O_7−x layers, the established trifluoroacetate route is favored. This paper reviews the most recent work on chemical solution deposition within the IFW Dresden while also considering achievements on this specific research topic worldwide.     

Rib waveguides based on Zn-substituted LiNbO3 films grown by liquid phase epitaxy

The fabrication of epitaxially grown Zn-substituted LiNbO₃ (Zn:LiNbO₃) waveguide films and rib waveguides is reported and detailed investigations about microstructure, morphology and optical waveguide properties are provided. Zn:LiNbO₃ films were grown on congruent X-cut LiNbO₃ substrates by a modified liquid phase epitaxy in solid–liquid coexisting solutions. The homogeneously Zn-substituted films exhibit high crystalline perfection and extremely flat surfaces with averaged surface roughness of rms = 0.2–0.3 nm. At the film/substrate interface a Zn-containing transient layer has been observed, which allows the growth of elastically strained Zn:LiNbO₃ film lattices. X-ray diffraction reciprocal-space measurements prove the pseudomorphic film growth. The refractive index difference between substrate and film depends on the zinc substitution content, which increase with rising growth temperatures. For films with 5.3 mol% Zn (Δn_o ≈ +5 × 10⁻³) only ordinary ray propagation was observed, while for films with 7.5 mol% Zn (Δn_o ≈ +8 × 10⁻³, Δn_e ≈ +5 × 10⁻³) both modes, TM and TE propagate. Stress-induced refractive index changes are in the order of Δn ≈ 10⁻⁴. In rib waveguide microstructures singlemode propagation with nearly symmetrical field distribution has been observed. To demonstrate the potential of the proton exchange-assisted dry-etching technique interferometer microstructures were fabricated.     

Growth, thermal and spectroscopic characteristics of LiNd(WO4)2 crystal

Crystal growth, thermal and optical characteristics of LiNd(WO₄)₂ crystal have been investigated. The LiNd(WO₄)₂ crystal up to Ø15 × 32 mm³ has been grown by Czochralski technique. The hardness is about 5.0 Mohs’ scale. The specific heat at 50 °C is 0.42 J g⁻¹ K⁻¹. The thermal expansion coefficient for c- and a- axes is 1.107 × 10⁻⁵ and 2.104 × 10⁻⁵ K⁻¹, respectively. The absorption and fluorescence spectra and the fluorescence decay curve of LiNd(WO₄)₂ crystal were measured at room temperature. Some spectroscopic parameters such as the intensity parameters, the spontaneous transition probabilities, the fluorescence branching ratios, the radiative lifetimes and emission cross sections were estimated.     

Ca4REO(BO3)3 crystals for green and blue microchip laser generation: from crystal growth to laser and nonlinear optical properties

We have taken advantage of congruent melting behavior of the nonlinear rare-earth oxoborate Ca₄REO(BO₃)₃ family to perfect a process of collective fabrication of self-frequency doubling microchip laser based on Nd:GdCOB (Ca₄Gd_1−xNd_xO(BO₃)₃) crystals. The process goes from Czochralski boule to 1 × 3 mm² chips perfectly oriented (better than 0.1°) to the phase matching direction (θ=90°, φ=46°) in the XY principal plane, with dielectric mirrors directly deposited on both faces of the chips. 20 mW of self-frequency doubling output power at 530 nm was performed under 800 mW of diode laser as incident pump power at 812 nm. In addition, new compositions from the solid solution Ca₄Gd_1−xY_xO(BO₃)₃ (Gd_1−xY_xCOB) (x=0.13, 0.16, 0.44) have been grown by the Czochralski pulling method, in order to achieve noncritical phase matching (NCPM) second harmonic generation of ⁴F_3/2 → ⁴I_9/2 Nd³⁺ doped laser hosts. Three types of laser wavelengths have been chosen: Nd:YAP (YAlO₃) at 930 nm, Nd:YAG (Y₃Al₅O₁₂) at 946 nm, and Nd:ASL (Nd_ySr_1−x La_x−yMg_x Al_12−xO₁₉) at 900 nm. Angular acceptance measurements of these three types of compositions present very large values, compared to pure GdCOB or YCOB oriented in critical phase matching configurations.     

Effect of SiO2 buffer layer thickness on the properties of ITO/Cu/ITO multilayer films deposited on polyethylene terephthalate substrates

Transparent conductive ITO/Cu/ITO films were deposited on polyethylene terephthalate (PET) substrates with a SiO₂ buffer layer by magnetron sputtering using three cathodes at room temperature. The effect of the SiO₂ buffer layer thickness on the electrical and optical properties of ITO/Cu/ITO films was investigated. The ITO/Cu/ITO film deposited on the 40 nm thick SiO₂ buffer layer exhibits a sheet resistance of 143Ω/sq and transmittance of 65% at 550 nm wavelength. Highly transparent ITO/Cu/ITO films with a transmittance of 80% and a sheet resistance of 98.7Ω/sq have been obtained by applying −60 V substrate bias.     

Electrical and optical properties of 12CaO·7Al2O3 electride doped indium tin oxide thin film deposited by RF magnetron co-sputtering

12CaO·7Al₂O₃ electride (C12A7:e⁻) doped indium tin oxide (ITO) (ITO:C12A7:e⁻) thin films were fabricated on a glass substrate by an RF magnetron co-sputtering system with increasing number of C12A7:e⁻ chips (from 1 to 7) and at various oxygen partial pressure ratios. The optical transmittance of the ITO:C12A7:e⁻ thin film was higher than 70% in the visible wavelength region. In the electrical properties of the thin film, a decrease of the carrier concentration from 2.6 × 10²⁰ cm^− 3 to 2.1 × 10¹⁸ cm^− 3 and increase of the resistivity from 1.4 × 10^− 3 Ω cm to 4.1 × 10^− 1 Ω cm were observed with increasing number of C12A7:e⁻ chips and oxygen partial pressure ratios. It was also observed that the Hall mobility was decreased from 17.27 cm²·V^− 1·s^− 1 to 5.13 cm²·V^− 1·s^− 1. The work function of the ITO thin film was reduced by doping it with C12A7:e⁻.     

Relationship between photoluminescence and structural properties of the sputtered Zn1−xCdxO films on Si substrates

Zn_1−xCd_xO (x=0.2, 0.4) alloyed crystal thin films have been deposited on Si(1 1 1) substrates at different temperatures by using dc reactive magnetron sputtering technique. The Zn_1−xCd_xO films are of highly (0 0 2)-preferred orientation possessing the hexagonal wurtzite structure of pure ZnO. At 450 °C, the films have better crystal quality and photoluminescent characteristics. For the films with x=0.2 and 0.4, the corresponding near-band-edge (NBE) energies are 3.10 and 3.03 eV, respectively, both have red-shifts compared with that of ZnO (3.30 eV). For the substrate temperatures lower or higher than 450 °C, the other NBE emission peak appears, the X-ray diffraction intensity of (0 0 2) peak decreases and the related FWHM increases. With the Cd addition up to x=0.4 both the XRD and PL intensity of the Zn_1−xCd_xO films decrease sharply in comparison with x=0.2.     

Biosensor enhanced by glucose oxidase biomimetic membrane containing the platinum and silica nanoparticles

In this paper, glucose biosensor is fabricated with immobilization of glucose oxidase (GOx) in platinum and silica sol. The glucose biosensor combined with Pt and SiO₂ nanoparticles could make full use of the properties of nanoparticles. A set of experimental results indicates that the current response for the enzyme electrode containing platinum and silica nanoparticles increases from 0.32 µA cm^− 2 to 33 µA cm^− 2 in the solution of 10 mM β-D-glucose. The linear range is 3 × 10^− 5 to 3.8 × 10^− 3 M with a detection limit of 2 × 10^− 5 M at 3σ. The effects of the various volume ratios of Pt and SiO₂ sols with respect to the current response and the stability of the enzyme electrodes are studied.     

Study on Li-ion diffusion in nano-crystalline LiMn2O4 thin film cathode grown by pulsed laser deposition using CV, EIS and PITT techniques

In the present work, LiMn₂O₄ thin films have been prepared by pulsed laser deposition on stainless steel substrates. The films deposited at 400 °C and 200 mTorr of oxygen were mainly composed of nano-crystals less than 100 nm and their agglomerates. Three different electrochemical methods including CV, EIS and PITT were applied to measure the overall Li⁺-ion diffusion coefficients and charge-transfer resistances at various potentials from 3.85 to 4.5 V. The Li⁺ diffusion coefficients were in the range of 10⁻¹² to 10⁻¹⁰ cm² s⁻¹, depending on the potentials. It was found that the charge-transfer resistances decreased with the increase of potentials. Especially, relatively high diffusion coefficients and low charge-transfer resistances were observed above 4.2 V.     

Preparation of double-doped BaCeO3 and its application in the synthesis of ammonia at atmospheric pressure

Perovskite-type oxides BaCe_0.90Sm_0.10O_3−δ (BCS) and BaCe_0.80Gd_0.10Sm_0.10O_3−δ (BCGS) were synthesized by the sol–gel method and characterized by thermal analysis (TG-DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Using the sintered samples as solid electrolytes and silver–palladium alloy as electrodes, ammonia was synthesized from nitrogen and hydrogen at atmospheric pressure in a solid-state proton-conducting cell reactor. The maximum rate of production of ammonia was 5.82×10⁻⁹ mol s⁻¹ cm⁻².     

Surface and grain-boundary energies as well as surface mass transport in polycrystalline CeO2

The multiphase equilibration technique for the determination of the equilibrium angles that develop at the interphase boundaries of a solid–liquid–vapor system, has been used to calculate the surface and interfacial energies in polycrystalline CeO₂ and CeO₂/Cu system in argon atmosphere at the temperature range 1473–1773 K. Linear temperature functions were obtained by extrapolation, for the surface energy γ_sv (J/m²) = 2.465–0.563 × 10⁻³ T and the grain-boundary energy γ_ss (J/m²) = 1.687–0.391 × 10⁻³ T of the ceramic, as well as for the interfacial energy γ_sl (J/m²) = 2.623–1.389 × 10⁻³(T −1356 K) of the CeO₂/Cu system. Grain-boundary grooving studied on polished surfaces of CeO₂ annealed in argon atmosphere at the same temperature range has shown that surface diffusion was the dominant mechanism for the mass transport. The surface diffusion coefficient can be expressed according to the equation D_s (m²/s) = 3.82 × 10⁻⁴ exp(−308,250/RT).     

Physical properties of transparent conducting Cd–Te–In–O thin films: Outlining a thermodynamic system for transparent conducting oxides

Cd–Te–In–O thin films are grown by pulsed laser deposition using a composite target of CdTe powder embedded in an indium matrix. Oxygen pressures range from 2.00 to 6.67 Pa at a substrate temperature of 420 °C. The structure, optical transmission and sheet resistance of the films are measured. Substitutional compounds with In_2 − 2x(Cd,Te)_2xO₃ stoichiometry are found at high oxygen pressures. A ternary phase diagram of the CdO–In₂O₃–TeO₂ system shows the relationship between the structure and the stoichiometry of the films. To evaluate film performance, a figure of merit is proposed based on the relationship between the integral photonic flux and the sheet resistance. The best figure of merit values corresponds to a sample prepared at 3.8 Pa O₂ that consists of (In₂O₃)_0.3(CdTe₂O₅)_0.7 and exhibits an optical band gap of 3.0 eV. This sample is a suitable substrate for electrodeposition due to its good electrochemical stability.     

Structure and properties of Ta/TaOx barrier films deposited by direct current magnetron sputtering

Double-layer Ta/TaO_x films were deposited on glass substrates by direct current magnetron sputtering. The impact of the underlying TaO_x on the structure and properties was also investigated using X-ray diffraction analysis, Auger electron microscopy, scanning electron microscopy and atomic force microscopy. This study finds that the structure and properties of Ta/TaO_x films depends on the O₂ flow during the under-layer TaO_x deposition. As the O₂ gas flow ratio increases from 3 to 7%, more and more oxidized amorphous TaO_x films in the under-layer were formed, which caused the preferred growth orientation of upper Ta films to change from (200) to (221) systematically. Increasing the oxygen flow ratio of under-layer TaO_x films also makes the average grain size of upper Ta films decrease from 10.7 to 2.2 nm.     

Fabrication of KTa0.65Nb0.35O3 film by pulsed laser deposition on glass substrate with various buffer layers

KTa_0.65Nb_0.35O₃ (KTN) thin films were deposited on amorphous glass substrates using a range of single buffer layers such as indium tin oxide (ITO), zinc oxide (ZnO), 3 at% Al-doped ZnO (AZO), and 3 at% Ga-doped ZnO (GZO), as well as a variety of multi-buffer layers such as SrTiO₃ (STO)/ITO, STO/ZnO, STO/AZO, and STO/GZO using a pulsed laser deposition system. All films showed a polycrystalline perovskite phase with the exception of all single buffer layers and STO/ITO multi-buffer layers. The STO buffer layer is important for crystallizing KTN films due to the similar lattice constant and same crystal structure. The optical transmittance of all films exhibited a transmittance ?90% in the wavelength range.     

Doping-induced microstructural, textural and optical properties of In2Ti1−xVxO5+δ semiconductors and their role in the photocatalytic splitting of water

The physicochemical properties of V-doped indium titanates (In₂Ti_1−xV_xO_5+δ, 0.0 ≤ x ≤ 0.2) were investigated by using XPS, powder XRD, UV–vis, SEM and luminescence spectroscopy techniques. The Rietveld refinement of XRD data revealed that even though the V-containing samples were isostructural with In₂TiO₅ (orthorhombic space group Pnma), a systematic x-dependent variation was noticeable in the Ti–O bond lengths in [TiO₆] octahedral units, cell parameters and in the value of δ. XPS results confirmed the coexistence of V⁵⁺ and V⁴⁺ states, leading thereby to an enhancement in oxygen non-stoichiometry in the doped samples. A loading-dependent progressive shift from 400 to 750 nm was also observed in the onset of the absorption edge, indicating a significant narrowing of the band gap. Furthermore, the samples with higher V-content were comprised of the grain clusters having larger size and an irregular shape. The UV–vis, photoluminescence and thermoluminescence studies indicate that the doping-induced lattice defects may give rise to certain closely spaced acceptor/donor energy levels in between the band gap of host matrix. The indium titanates are found to serve as stable photocatalysts for water splitting under visible light, where oxygen was the major reaction product. The role of microstructural and morphological properties in the photocatalytic activity is discussed.