Deposition of Pb(Zr,Ti)O3 Thin Films by Metal-Organic Chemical Vapor Deposition Using β-diketonate Precursors at Low Temperatures

Lead zirconate titanate (PZT) thin films were deposited by metal-organic chemical vapor deposition (MOCVD) using β-diketonate precursors and 0₂ at temperatures below 500°C on variously passivated Si substrates. PZT thin films could not be deposited on bare Si substrates, owing to a serious diffusion of Pb into the Si substrate during deposition. Pt/SiO₂/Si substrates could partially block the diffusion of Pb, but a direct deposition of PZT thin films on the Pt/SiO₂/Si substrates resulted in a very inhomogeneous deposition. A TiO₂ buffer layer deposited on Pt/SiO₂/Si substrates could partially suppress the diffusion of Pb and produce homogeneous thin films. However, the crystallinity of PZT thin films deposited on the TiO₂-buffered Pt/SiO₂/Si substrate was not good enough, and the films showed random growth direction. PZT thin films deposited on the PbTiO₃-buffered Pt/SiO₂/Si substrates had good crystallinity and a- and c-axis oriented growth direction. However, the PZT thin film deposited at 350°C showed fine amorphous phases at the grain boundaries, owing to the low chemical reactivities of the constituent elements at that temperature, but they could be crystallized by rapid thermal anneaiing (RTA) at 700°C. PZT thin film deposited on a 1000-å PbTiO₃,-thin-film-buffered Pt/SiO₂/Si substrate at 350°C and rapid thermally annealed at 700°C for 6 min showed a single-phase perovskite structure with a composition near the morphotropic boundary composition.     

Fabrication and Properties of Sol–Gel-Derived BiScO3–PbTiO3 Thin Films

BiScO₃–PbTiO₃ (BSPT) thin films near the morphotropic phase boundary were successfully fabricated on Pt(111)/Ti/SiO₂/Si substrates via an aqueous sol–gel method. The thin films exhibited good crystalline quality and dense, uniform microstructures with an average grain size of 50 nm. The dielectric, ferroelectric, and piezoelectric properties of the sol–gel-derived BSPT thin films were investigated. A remanent polarization of 74 μC/cm² and a coercive field of 177 kV/cm were obtained. The local effective piezoelectric coefficient d ^*₃₃ was 23 pC/N at 2 V, measured by a scanning probe microscopy system. The dielectric peak appeared at 435°C, which was 80°C higher than that of Pb(Ti, Zr)O₃ thin films.     

In-Plane Polarized 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 Thin Films

Ferroelectric 0.7Pb(Mg_1/3Nb_2/3)O₃–0.3PbTiO₃ (PMN-PT) thin films were deposited on ZrO₂/SiO₂/silicon substrates using a chemical-solution-deposition method. Using a thin PZT film as a seed layer for the PMN-PT films, phase-pure perovskite PMN-PT could be obtained via rapid thermal annealing at 750°C for 60 s. The electrical properties of in-plane polarized thin films were characterized using interdigitated electrode arrays on the film surface. Ferroelectric hysteresis loops are observed with much larger remanent polarizations (∼24 μC/cm²) than for through-the-thickness polarized PMN-PT thin films (10–12 μC/cm²) deposited on Pt/Ti/Si substrates. For a finger spacing of 20 μm, the piezoelectric voltage sensitivity of in–plane polarized PMN-PT thin films was ∼20 times higher than that of through-the-thickness polarized PMN-PT thin films.     

Structural Variation of the BaTi4O9 Thin Films Grown by RF Magnetron Sputtering

BaTi₄O₉ thin films were grown on a Pt/Ti/SiO₂/Si substrate using rf magnetron sputtering and the structure of the thin films were then investigated. For the films grown at low temperature (≤350°C), an amorphous phase was formed during the deposition, which then changed to the BaTi₅O₁₁ phase when the annealing was conducted below 950°C. However, when the annealing temperature was higher than 950°C, a BaTi₄O₉ phase was formed. On the contrary, for the films grown at high temperature (>450°C), small BaTi₄O₉ grains were formed during the deposition, which grew during the annealing. The homogeneous BaTi₄O₉ thin films were successfully grown on Pt/Ti/SiO₂/Si substrate when they were deposited at 550°C and subsequently rapid thermal annealed at 900°C for 3 min.     

Pb-Diffusion Barrier Layers for PbTiO3 Thin Films Deposited on Si Substrates by Metal Organic Chemical Vapor Deposition

The interfaces between metal organic chemical vapor deposited PbTiO₃ thin films and various diffusion barrier layers deposited on Si substrates were investigated by transmission electron microscopy. Several diffusion barrier thin films such as polycrystalline TiO₂, amorphous TiO₂, ZrO₂, and TiN were deposited between the PbTiO₃ thin film and Si substrate, because the deposition of PbTiO₃ thin films on bare Si substrates produced Pb silicate layers at the interface irrespective of the deposition conditions. The TiO₂ films were converted to PbTiO₃ by their reaction with diffused Pb and O ions during PbTiO₃ deposition at a gubstrate temperature of 410°C. Further diffusion of Pb and O induces formation of a Pb silicate layer at the interface. ZrO₂ did not seem to react with Pb and O during PbTiO₃ deposition at the same temperature, but the Pb and O ions that diffused through the ZrO₂ layer formed a Pb silicate layer between the ZrO₂ and Si substrate. The TiN films did not seem to react with Pb and O ions during the deposition of PbTiO₃ at 410°C, but reacted with PbTiO₃ to form a lead-deficient pyrochlore during postdeposition rapid thermal annealing at 700°C. However, TiN could effectively block the diffusion of Pb and O ions into the Si substrate and the formation of Pb silicate at the interface.     

Properties of Compositionally Graded BiScO3–PbTiO3 Thin Films Fabricated by a Sol–Gel Process

The compositionally graded BiScO₃–PbTiO₃ (BSPT) thin films were fabricated on Pt/Ti/SiO₂/Si by a sol–gel method. For the up-graded thin film, the PbTiO₃ content increased from the film–substrate interface to the surface of the film, while the down-grade thin film showed the opposite trend. The graded thin films exhibited single-phase structures and dense microstructures. The dielectric and ferroelectric properties of the thin films were investigated. The results showed that the compositionally graded BSPT thin films had similar remanent polarization value but a higher dielectric constant, dielectric tunability, and piezoelectric coefficient d ₃₃ compared with the homogeneous thin film with a composition of 0.36BiScO₃–0.64PbTiO₃ at the morphotropic phase boundary.     

Synthesis of Highly Oriented Lead Zirconate–Lead Titanate Film Using Metallo-organics

Crack-free Pb(Zr,Ti)O₃ (PZT) thin films with preferred orientation were prepared successfully on MgO (100), SrTiO₃ (100), and Pt/Ti/SiO₂/Si substrates from metal alkoxide solutions. Calcination of precursor films in a H₂O─-O₂ gas mixture was found to be effective not only for low-temperature crystallization of perovskite PZT, but also for obtaining the preferred orientation of PZT films. Single-phase PZT films with high preferred orientation were synthesized on MgO (100) and Pt/Ti/SiO₂/Si substrates at 550° and 600°C for 2 h, respectively. The PZT film on the Pt/Ti/SiO₂/Si substrate showed a permittivity of 520, tan δ of 0.03, a remanent polarization of 24 μC/cm², and a coercive field of 54 kV/cm.     

Decomposition and Crystallization of a Sol–Gel-Derived PbTiO3 Precursor

A lead titanate (PbTiO₃) precursor, prepared by the Pechini method, has been heat treated to study the transformation from amorphous to crystalline PbTiO₃. Nucleation of PbTiO₃ in the temperature interval 400°–475°C occurred before completion of the thermal decomposition of the polymeric precursor, resulting in nanocrystalline PbTiO₃ with an unexpectedly high tetragonality ( c/a ratio). Annealing and crystallite growth at 600°C resulted in an increasing c/a ratio with annealing time in line with the expected finite size effect of PbTiO₃. The unusually high c/a ratios observed in PbTiO₃ nucleated at 400°–475°C are discussed in relation to partial reduction and point defects in PbTiO₃.     

Preparation of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 Thin Films Via a Polyvinylpyrrolidone-Assisted Aqueous Sol–Gel Process and Dielectric Properties

Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PMN–PT) thin films were prepared by spin coating using aqueous solutions of metal salts containing polyvinylpyrrolidone, where niobium oxide layers and lead—magnesium–titanium oxide layers were laminated on Pt(111)/TiO _x /SiO₂/Si(100) substrates and fired at 750° or 800°C. 250 ± 20 nm thick 0.7PMN–0.3PT thin films of a single-phase perovskite could be prepared, and the film fired at 750°C had dielectric constants and dielectric loss of 1900 ± 350 and 0.13 ± 0.03, respectively, exhibiting polarization-electric field hysteresis with a remanent polarization of 5.1 μC/cm² and a coercive field of 21 kV/cm.     

Orientation Control in Sol–Gel-Derived BiScO3–PbTiO3 Thin Films

BiScO₃–PbTiO₃ (BSPT) thin films were fabricated via a sol–gel method on Pt(111)/Ti/SiO₂/Si(111) substrates. The effects of different factors on the orientation of the sol–gel-derived BSPT thin films were investigated. The results showed that a higher lead excess concentration, longer drying time, higher pyrolysis temperature, longer pyrolysis time, higher crystallization temperature, and longer crystallization time could enhance the (100) orientation of the BSPT thin films. Based on the experimental results, a mechanism for the orientation evolution in the sol–gel-derived BSPT thin films was proposed. The production of the (100) orientation was attributed to the (100)-oriented PbO nanocrystals forming during the pyrolysis process due to the lattice match.     

The Effect of Deposition Temperature and Postanneal on the Bi3.63Pr0.3Ti3O12 thin Films Prepared by RF-Magnetron Sputtering Method

Praseodymium doped Bi₄Ti₃O₁₂ (BTO) thin films with composition Bi_3.63Pr_0.3Ti₃O₁₂ (BPT) were successfully prepared on Pt/Ti/SiO₂/Si substrates by RF-magnetron sputtering method at substrate temperatures ranging between 500° and 750°C. The structural phase and orientation of the deposited films were investigated in order to understand the effect of the deposition temperature on the properties of the BPT films. As the substrate temperature was increased to 700°C, the films started showing a tendency of assuming a c -axis preferred orientation. At lower temperatures, however, polycrystalline films were formed. The Pt/BPT/Pt capacitor showed an interesting dependence of the remnant polarization (2 P _r) as well as dc leakage current values on the growth temperature. The film deposited at 650°C showed the largest 2 P _r of 29.6 μC/cm². With the increase of deposited temperature, the leakage current densities of films decreased at the same applied field and the film deposited at 750°C exhibited the best leakage current characteristics. In addition, the ferroelectric fatigue and Raman measurements were carried out on the as-prepared, postannealed in air and postannealed in oxygen BPT films. It was revealed that the BPT film postannealed in air exhibited the weakest fatigue-resistance characteristics and highest frequency shifted Raman vibration modes, indicating the highest oxygen vacancy concentration in this film.     

Multiferroic BiFeO3 Thin Films Buffered by a SrRuO3 Layer

Multiferroic BiFeO₃ thin films of huge polarization have been successfully realized by using SrRuO₃ as a buffer layer on a Pt/TiO₂/SiO₂/Si substrate. They consist of a single perovskite phase and are nearly randomly orientated, where the SrRuO₃ buffer layer lowers the crystallization temperature and improves the crystallinity of BiFeO₃. With increasing deposition temperature during magnetron sputtering, they undergo an apparent grain growth and reduction in surface roughness. The multiferroic thin films deposited on the SrRuO₃-buffered Pt/TiO₂/SiO₂/Si substrate at higher temperatures show much improved polarization and reduced coercive field, together with a lowered leakage current. A huge remnant polarization (2 P _r) of 150 μC/cm² and a coercive field (2 E _c) of 780 kV/cm were measured for the BiFeO₃ film deposited at 650°C.     

Fabrication and Characterization of Pyroelectric Ba0.8Sr0.2TiO3 Thin Films by a Sol-Gel Process

A sol-gel process was used to prepare pyroelectric Ba_0.8Sr_0.2TiO₃ thin films with large columnar grains (100–200 nm in diameter) on Pt/Ti/SiO₂/Si substrates, via using a 0.05 M solution precursor. The relationship between dielectric constant and temperature (ɛ_r- T ) showed two distinctive phase transitions in the Ba_0.8Sr_0.2TiO₃ thin films. Both the remnant polarization and the coercive field decreased as the temperature increased from −73°C to 40°C. Its low dissipation factor (tan δ= 2.6%) and high pyroelectric coefficient ( p = 4.6 × 10⁻⁴ C·(m²·K)⁻¹ at 33°C), together with its good insulating properties, made the prepared Ba_0.8Sr_0.2TiO₃ thin films promising for use in uncooled infrared detectors and thermal imaging applications.     

Use of Transmission Electron Microscopy for the Characterization of Rapid Thermally Annealed, Solution-Gel, Lead Zirconate Titanate Films

The microstructure and preferred orientations of rapid thermally annealed Pb(Zr_0.53,Ti_0.47)O₃ films, deposited on Pt/Ti/SiO₂/Si electrode/substrates by solution-gel spinning, have been investigated using analytical and high-resolution electron microscopy and X-ray diffraction. The temperature of pyrolysis of the PZT films was found to influence the preferred orientation of the film: lower temperatures (350°C) favored a (111) orientation, whereas higher temperatures (420°C) favored a (100) orientation. Excess Pb was used to control the A-site stoichiometry of the film particularly at the film surface where Pb-deficient crystals could often be observed. The absence of these crystals was shown to be correlated with an improvement in the dielectric response.     

Effect of Orientation on the Ferroelectric Behavior of (Pb,Sr)TiO3 Thin Films

Pb_0.6Sr_0.4TiO₃ (PST) ferroelectric thin films were prepared on two different substrates by sol–gel methods. Films derived on the LaNiO(LNO)/Pt/Ti/SiO₂/Si substrates showed a strong (100) preferred orientation. The PST thin films grown on the LNO/Pt/Ti/SiO₂/Si(100) substrate showed a non-uniform rounded grain size distribution and have a larger polarization and lower coercive field E _c. The dependence of electrical properties derived on the Pt/Ti/SiO₂/Si and LNO/Pt/Ti/SiO₂/Si substrates has been studied, with a focus on the change of dielectric constant versus direct current (DC) bias field. The dielectric and ferroelectric properties of the Pb_0.6Sr_0.4TiO₃ thin films deposition on two kinds of substrates were investigated as a function of temperature, frequency and DC bias field.     

Effects of Heating Profiles on the Orientation and Dielectric Properties of 0.5Pb(Mg1/3Nb2/3)O3-0.5PbTiO3 Thin Films by Chemical Solution Deposition

0.5Pb(Mg_1/3Nb_2/3)O₃-0.5PbTiO₃ thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by varying the film formation procedures and heating processes. Depending on the multilayer film formation and appropriate heating process, the films were grown with a preferential orientation. The films showed a (100)-preferred orientation and large grain-size distribution when they were directly heat-treated after deposition of amorphous layers. The films showed a (111)-preferred orientation and small grain-size distribution when formed layer-by-layer or directly heating amorphous thin films with a perovskite seed layer. These results were explained by the effect of a seed layer. Saturation polarization of the (111)-preferred films was ∼35 µC/cm², which was somewhat higher than that of the (100)-preferred film. In contrast, the dielectric constant of the (100)-preferred film was ∼1600, which was larger than that of the (111)-preferred film.     

Preparation of Lead Zirconate Titanate Thin Films Derived by Hybrid Processing: Sol-Gel Method and Laser Ablation

Thin films of Pb(Zr_0.52Ti_0.48)O₃ (PZT) were prepared by hybrid processing (sol-gel and excimer laser ablation) on Pt/Ti/SiO₂/Si substrates. Crystalline phases and microstructures of the PZT films were investigated by X-ray diffraction analysis and scanning electron microscopy, respectively. Electrical properties of the films were evaluated by measuring their P - E hysteresis loops and dielectric constants. The temperature of postdeposition annealing in hybrid processing was lower than that in the case of direct film deposition by laser ablation on a Pt/Ti/SiO₂/Si substrate. The preferred orientation of the films derived by hybrid processing could be controlled using the seeding layer deposited by the sol-gel process. The films fabricated by hybrid processing consisted of the perovskite phase with a (111) preferred orientation and had good ferroelectric properties.     

Titanium Diffusion into (K0.5Na0.5)NbO3 Thin Films Deposited on Pt/Ti/SiO2/Si Substrates and Corresponding Effects

Lead-free (K_0.5Na_0.5)NbO₃ (KNN) thin films were prepared on Pt/Ti/SiO₂/Si substrates by a sol–gel processing method, and titanium diffusion from the substrates into the KNN films under different thermal treatment conditions were investigated by the secondary ion mass spectroscopy depth profile and X-ray photoelectron spectroscopy surface analysis. Titanium diffusion was evident in all the KNN thin films, which was further aggravated not only by increasing the annealing temperature, but also surprisingly by higher ramping rate attributed to the resulting larger grain boundaries. The pronounced effects of the titanium diffusion and the resulting substitution of Ti⁴⁺ for Nb⁵⁺ with different valence states on the composition, structure, and electrical properties of the KNN thin films are analyzed and discussed. The results showed that the Ti diffusion from the substrate played a crucial role in affecting the structure and electrical properties of the ferroelectric KNN thin films deposited on Pt/Ti/SiO₂/Si substrate.     

Ferroelectric and Dielectric Properties of Bilayered PMN–PT/BNdT Thin Films

Bilayered thin films consisting of Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ and (Bi_3.15Nb_0.85)Ti₃O₁₂ (PMN–PT/BNdT) layers have been successfully deposited on Pt/Ti/SiO₂/Si substrate by RF sputtering. Their ferroelectric and dielectric behaviors can be tailored by varying the thicknesses of the two constituent ferroelectric layers. An enhancement in both remanent polarization and fatigue resistance is observed by increasing the layer thickness of BNdT, which also leads to an increase in coercive field. The bilayered ferroelectric thin films demonstrate electrical behaviors in association with space charge at low frequencies, which can account for the observed ferroelectric and fatigue properties, as confirmed by frequency and impedance studies.     

Ferroelectric Thin Films of Bismuth-Containing Layered Perovskites: Part I, Bi4Ti3O12

Ferroelectric thin films of bismuth-containing layered perovskite Bi₄Ti₃O₁₂ have been fabricated by a metalorganic decomposition (MOD) method. Crack-free and crystalline films of ∼5000 Å thickness have been deposited on Pt/Ti/SiO₂/Si substrates. Different heat treatments have been studied to investigate the nucleation and growth of perovskite Bi₄Ti₃O₁₂ crystallites. If the same composition and final annealing temperature are used, films with different orientations are obtained by different heating schedules. These films show a large anisotropy in ferroelectric properties. Theoretical considerations are presented to suggest that nucleation control is responsible for texture and grain-size evolution. Moreover, the origin of the ferroelectric anisotropy is rooted in the two-dimensional nature of layered polarization.